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Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
DOI : 10.5121/aeij.2015.2402 11
EFFECT OF ZN CONCENTRATION ON
STRUCTURAL AND OPTICAL PROPRIETIES OF
ZNO THIN FILMS DEPOSITED BY SPRAY
PYROLYSIS
Z.Yamlahi Alami1,*,M. Salem2, M. Gaidi2,3,J.Elkhamkhami1
1
laboratoire de la matière condensée ,dept .de physique , faculté de sciences Avenue de
Sebta, Mhannech I 93002 - Tétouan – Maroc
2
Laboratoire de Photovoltaïque Centre de Recherches et des Technologies de l’Energie,
Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia.
3
Department of Applied Physics, University of Sharjah, P.O. Box 27272, Sharjah, United
Arab Emirates
ABSTRACT
ZnO thin film were deposited by spray pyrolysis on glass substrates, using zinc nitrate as precursor with
different molar concentrations varying from 0.05M to 0.2 M. To study the structural proprieties of the film ,
the different technique was used as the X-ray diffraction, atomic force microscopy (AFM), Raman
scattering , and FTIR . The optical properties were explored by transmission, reflectivity and
Photoluminescence techniques. The ZnO thin films obtained in this paper are polycrystallines, the grain
size increases when the molar concentration of Zn precursor was increasing. The films are transparent in
visible region, this transmission values decreases when the molar concentration increase caused by the
increasing of surface roughness
KEYWORDS:
ZnO thin films; spray pyrolysis ; roughness.
1. INTRODUCTION
The increasing demand for energy made the solar cells as a new source of energy [1,2] for replace
the conventional sources. However , despite the concentrated efforts to develop the PV systems ,
the high cost of the generated electricity prevents that PV systems are more widely spread, to
reduce these cost, efforts to improve efficiency and the searches was concentrating on cheaper
materials and structures are undertaken .Thin film nanostructure is an attractive solution due to
their unique properties.
Zinc oxide (ZnO)[3] is one of the most extensively studied materials as an alternative photo
anode to TiO2[4].ZnO thin film has high transparency[5], piezoelectricity[6], room-temperature
ferromagnetism[7], and huge magneto-optic[8] effect , it can be grown into many different
nanoscale forms, thus allowing various novel devices to be achieved , also doping can improved
some proprieties of ZnO [9], like conductivity which may change at will from metallic to
insulting (including n-type and p-type conductivity. It has wide band gap energy of 3.37 eV, high
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
12
exciton binding energy of 60 meV, a wide range resistivity, high electron Hall mobility (200
cm2.V.s−1
) and high transparency at room temperature.
Some techniques was used to fabricate the ZnO thin film such as magnetron sputtering[10] spray
plasma [11], sol gel spin coating[12] , pulsed laser deposition[13], metal-organic chemical vapor
deposition and spray pyrolysis[5].
Spray pyrolysis is a versatile technique for deposition of metal oxides because of its cheapness
and easy process control which gives the possibility of obtaining films with the required
properties for different applications [5].
Different authors reported on the preparation of ZnO thin films by spray technique. In fact, E.
Bacaksiz et al. [14] prepared ZnO thin film starting with different solution precursors such as zinc
chloride, zinc acetate and zinc nitrate, at 0.1M concentration on glass substrate and at 550°C. It
was observed that the nature of precursor affected the structural and optical proprieties of ZnO
thin films. The higher value of transmittance was observed in ZnO thin films prepared with zinc
nitrate precursors. Mazabala Banto et al [5] studied the effect of precursor concentration on
structural, morphological and opto-electric properties of ZnO thin films starting by ZnCl2
dissolved in ethanol and deionized water with different molar concentrations increasing from
0.05M to 0.2M on glass substrate at 400°C and annealing or 5h,in air at 500°C. In this work it
was shown that the molarity of precursors affected the properties of ZnO thin film. The film
present high transmission (95%) at molar concentration 0.05M. E.U. Masumdar et al. [15] studied
the effect of molarity on structural and opto-electric properties of ZnO thin films elaborated by
using a precursor solution of zinc acetate in a mixed solvent of 75% methanol and 25 % distilled
water. The films were grow with different molar concentration varied from 0.1M to 0.75 M on
glass substrate and 450°C, the average transmission of the films varied from 75% to 88%.
The main purpose of this work is to obtain ZnO film with suitable proprieties for PV cells to can
be used as a transparent conductive oxide (TCO) thin film, to reduce the losses during
photovoltaic conversion [28].
In this study, the ZnO films deposited on the glass substrate was fabricated by zinc nitrate by
varying molar concentration from 0.05M to 0.2M. To reduce the fabrication cost, the ZnO thin
film was prepared without annealing temperature, so we could obtain high transparent, good
morphology and high quality of the crystal.
2. EXPERIMENTAL DETAILS
2.1. Materials and preparation
ZnO thin films were prepared by spray pyrolysis process from a solution with different molar
concentrations of Zn(NO3)2,6H2O precursor (0.05 M, 0.1M, 0.15 M and 0.2M) in 25 ml of
deionized water. The spray system used in this work was fully described and schematically
presented in [16]. The Zn(NO3)2,6H2O solution was sprayed with a solution spray rates of 2
ml/min onto a preheated glass substrate at 500°C during 10 min, using compressed air as a carrier
gas. The nozzle to substrate distance was about 45 cm. The obtained ZnO thin Films are
transparent, exhibiting a good adherence to the substrate surfaces.
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
13
2.2. Measurements
The structural characterization was carried out by X-ray diffraction (XRD) technique using a
Bruker D 8 advance X-ray diffractometer with CuKα(k=1.5418˚A) radiation for 2θ values in the
range of 25–60°.Film surface morphology was investigated using Atomic Force
Microscope(AFM) in tapping mode configuration by a nanoscope III microscope, and Raman
spectra were recorded in the 300-700 cm-1
range using a Jobin-Yvon spectrometer (T64000
model) equipped with an Ar+
laser (632.8 nm exciting line) and a CCD detector in a back-
scattering geometry. Transmittance spectra were recorded using a UV–vis spectrophotometer in
the 350–1200 nm range. The reflectivity spectra of the ZnO thin films surfacewere measured
using a LAMBDA 950 UV/Vis/NIR spectrophotometer equipped with an integrating sphere. The
composition of as-formed and treated ZnO thin film was analyzed by means of Fourier transform
infrared spectroscopy (FTIR).The optical properties were analysed by photoluminescence
technique PL) in the range 340-500 nm using a 299 nm line of an Ar laser as an excitation light
source.
3. RESULTS AND DISCUSSION
3.1. Structural properties
Fig. 1 Demonstrates the XRD patterns of ZnO thin films for different zinc nitrate precursors. The
films are polycrystallines with hexagonal Wurtzite structure and no parasite phase is observed.
All the graphs of ZnO thin films shown a orientation along the (002) so the c-axis of the
crystallites is perpendicular to the substrates, due to the minimization of internal stress and
surface free energy [5,17].
By increasing the molar concentration of precursors, the intensity of preferential orientation was
increased indicating that the films crystallinity has been improved, small peaks of (001) and (101)
orientation also appeared in concentration 0.15 and 0.2M.
20 30 40 50 60 70 80 90
ZnO-0.05M
ZnO-0.1M
ZnO-0.15M
ZnO-0.2M
)
(deg
2 ree
θ
)
100
(
)
002
(
)
101
(
)
102
( )
103
(
Figure 1: XRD patterns of ZnO films prepared with different molar concentration of precursor
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
14
The crystallite size was calculated from the (002) diffraction peak using Scherer formula:
D =
.

(1).
D is the grain size in a particular orientation, λ is the X-ray wavelength, θ is the diffraction angle
corresponding to the particular orientation, β is the width at half maximum intensity (FWHM) of
the peak.
Table 1 shows the evolution of particle size with the molarity. The results indicated that the
crystal quality of ZnO thin film was significantly improved with the increasing in molar
concentration.
We could have more crystal quality information by use this formula [18]:
δ =

 (2).
With D is the average grain size. The dislocation density is the length of dislocation lines per unit
volume of the crystal. Larger D and smaller δ values mean better crystallization of the films.
Dislocation densities exhibit a decrease with increasing molar concentration, which indicates that
the high molar concentration reduced the crystal lattice imperfections. The calculated c
parameters were found to be 0.5211, 0.5201, 0.5198, and 0.5195 nm when the molar
concentration varied from 0.05 M to 0.2M, compared to 0.5206 for a powder sample. The c
parameter values decrease with molar concentration. This defect is related to the stress increases
in the plane of the substrate surface.
The stress in the plane of the substrate surface, the c-axis strain (εzz) values has been calculated
using the following equation [19]:
ε =


× 100 . (3)
where c is the lattice parameter of the strained films calculated from the X ray diffraction data
and c0 is the lattice parameter of bulk ZnO. Figure 2 shows the evolution of strain against the
molar concentration (C).The strain is reduced when C increases.
For 0.05M the stress becomes positive (ɛzz0) suggesting that the film is subjected to tensile
stress in the plane of the substrate surface, and to compressive stress for the 0.1M, 0.15M and
0.2M concentrate samples.
Table 1: The particle size and dislocation with different precursor concentrations
Molar
concentration
(M)
2θ
(degree)
of (002)
FWHM
(degree)
Crystallite
size D
(nm)
δ × 10
(nm-2
)
0.05 34.40 0.82 9.95 10,1007
0.1 34.47 0.30 27.40 1,3319
0.2 34.51 0.25 32.35 0,9496
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
15
In thin films, strains originate mainly from the mismatch between the polycrystalline film and the
amorphous substrate and/or from the difference in the thermal expansion coefficients of the film
and the substrate [20] The external stress parallel to surface of film were calculated from the
DRX results using the following equation [21]:
(4) σ = 2C
 −
 !! !# $$
 !$
% ε
Where Cii are the elastic constants of ZnO bulk , its values are;
C11= 208.8 GPa, C12 = 119.7 GPa, C13 = 104.2 GPa, C
 '()
= 213.8 GPa.
Table 2 shows the external stress with different molar concentrations. At 0.05 M the external
stress was compressive, and became tensile for the three other concentrations, indicating a
relaxation of the structure with the increase of the grain’s size.
0,04 0,06 0,08 0,10 0,12 0,14 0,16 0,18 0,20 0,22
-0,20
-0,15
-0,10
-0,05
0,00
0,05
0,10 zz
ε
strain
molar concentration (M)
strain
%
Figure 2: Evolution of strain vs the molar concentration
Table 2: The external stress with different precursor concentrations
3.2. Morphological properties.
Fig 3 and 4 show the evolution of the grain size and the 2D. AFM surface morphology as a
function of Figure 3 shows that increasing concentration influences the size grain. The grain
present the spheres shape with uniform and homogenous distribution on the surface. It when
increasing the molarity, a more random distribution of the grains on the surface is observed,
which lead to a higher roughness. It is also observed that the particles agglomerated to form a
porous structure.
The size measures of the particles from the AFM surface images are 13.3nm, 21.5nm, 44.9nm for
molar concentration 0.05, 0.1and 0.2 M respectively. These values are higher than the values
Molar
concentration(M) σ(GPa)
0.05 -23,6077906
0.1 19,31523402
0.15 32,25406444
0.2 45,28236113
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
16
calculated from XRD data. This could be explained by the fact that XRD data is an average over
a large area (few mm2
), where AFM gives information about a micrometric area.
Fig 5 shows the AFM images 3D of ZnO thin films, the grains are orthogonal to the film surface
indicating that the film grows perpendicularly to the substrate. The fig 6 shows the average
surface roughness (Rms). The Rms varies from 8.34 nm to 20.54 nm when molar concentration
increases from 0.05 M to 0.2M. This evolution of the surface roughness is as a result of the grain
size increasing.
Figure3: AFM images 2D of ZnO thin film in different molar concentration
0,04 0,06 0,08 0,10 0,12 0,14 0,16 0,18 0,20 0,22
10
15
20
25
30
35
40
45
molar concentration (M)
grain
size
(nm)
Figure 4: Evolution of the grain size against the molar concentration
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
17
Figure 1: The AFM images 3D of ZnO thin films in different molar concentration
0,04 0,06 0,08 0,10 0,12 0,14 0,16 0,18 0,20 0,22
8
10
12
14
16
18
20
22
surface
roughness(nm)
molar concentration (M)
surface roughness in different concentration
Figure 6: Evolution of RMS according the molar concentration
3.3. FTIR
The FTIR analysis of ZnO thin film is shown in fig 7.The shoulder observed at 3556 cm-1
in all
samples corresponds to the O-H moiety emanating from water [22].The very smalls peak for N-H
stretching at 2940 cm-1
and 2450 cm-1
. The last peak illustrates the Zn-O at 500 - 400 cm-1
[23].
3.4. Raman
Raman spectra of the films were taken in order to confirm the presence of the Wurtzite phase in
the ZnO thin films.
ZnO in the hexagonal structures with C*+
,
symmetry each unit cell has 4 atoms and occupies 2b
sites of symmetry. The group theory predicts eight sets of phonon normal modes at the Γ point,
namely, 1A1 + 1E1 +2B1 +2E2[24].
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
18
Figure 8 shows a dominate mode centered at 437cm-1
which shifted to , the red shift (2cm-1
)
for molar concentration of 0.15M. All samples present a peak with strong intensity
corresponding to E2 (H)[25],E2(H) mode involving mainly Zn motion, which corresponds to
band characteristic of Wurtzite phase the lowest E1(LO) for all the sample appears around 582
cm-1
. The high intensity of the E2 mode and lowest E1 (LO) mode indicate the higher quality of
crystal in different concentrations.
4000 3500 3000 2500 2000 1500 1000 500
O-H
wave number (cm
-1
)
tra
n
s
m
itta
n
c
e
%
ZnO_ 0.05M
ZnO_ 0.1M
ZnO_ 0.15M
ZnO_ 0.2M
Zn-O
N-H
N-H
Figure7: The FTIR analysis of ZnO thin film synthesized with different molar concentrations
400 450 500 550 600 650 700
200
intensity
(u.a)
Raman shift (cm
-1
)
ZnO-0.05M
ZnO-0.1M
ZnO-0.15M
ZnO-0.2M
E2H
E1(LO)
Figure 8: Raman spectra of ZnO prepared by spray pyrolysis with different molar concentrations
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
19
3.5. Optical properties.
3.5.1. Transmission
The optical transmission curves of ZnO thin films recorded as a function of wavelength in the
range of 200 nm to 1200nm are shown in fig9.
All the films are mostly transparent in the visible region. However, the transmission goes down
from 93% to 73% when the concentration increased from 0.05 M to 0.2M.All the films are highly
absorbent in UV. The reduction of transmittance at higher molar concentration may be attributed
to the increased scattering of photons by increase of the roughness of the surface morphology.
All the samples show a sharp absorption edge near to 375 nm in the UV region. This absorption
edge was found to have a red shift when increasing the molarity.
The optical band gap was determined using method of Tauc [26];
(ahν)²=C(hν-Eg),(5)
C is a constant; hν is the photon energy and Eg is the optical band gap. The optical absorption
coefficient (a) was calculated using the following equation:
a=-
-./#

(6)
were the normalized transmission T was obtained from optical transmission spectra which has
been normalized to the highest measured values by setting it to 100% , D the diameters values of
the crystal
Table 3 shows the values of the energy band gap of ZnO thin films grows in different molar
concentration of precursors.
The value of the optical band gap is obtained by linearly extrapolating the linear portion to a=0 .
With increasing in molar concentration from 0.05M to 0.2M the energy band gap decreased from
3,64 to 3,16 eV, the decreased in band gap energy with increasing in molar concentration could
be due to increase in carrier concentration and decrease in strain values. It has been demonstrated
earlier the correlation between the direct band gap and the compressive stress of the ZnO thin
films [27].
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
20
200 400 600 800 1000 1200
0
20
40
60
80
100
Transmittance
%
Wavelength (nm)
ZnO_0.05M
ZnO_0.1M
ZnO_0.15
ZnO_0.2M
Figure 9:Transmission spectra with different molar concentrations
1,5 2,0 2,5 3,0 3,5 4,0 4,5
0
1
2
3
(
α
h
µ
)
2
x10
8
(eV
/cm
)
2
hµ (eV)
ZnO_0.05 M
ZnO_0.1 M
ZnO_0.15M
ZnO_0.2 M
Figure 10: (αhν)²vs hν plot of thin film with different molar concentrations
Table 3: Energy band gap in different molar concentration
Samplesmolar
concentration (M)
0.05 0.1 0.15 0.2
Eg (eV) 3.64 3.56 3.34 3.15
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
21
3.5.2. Reflectance
These spectra show the excellent antireflection properties of the ZnO/Glass layer with different
concentrations (fig 11). The total reflectivity had a low values in lower molar concentrations due
to a lower values of RMS in the lower molar concentration this values increasing from 10% to
12%. Obviously, the increase of surface roughness causes the increase in scattering, reflection on
t he fil m sur f ace[ 2 8] , and t hus t he t r ansmi t t ance of t h e fi l m decr eases.
3.6.Photoluminescence proprieties.
PL spectra of ZnO thin films are shown in fig 12. It is clearly seen that the photoluminescence
intensity depends strongly on the molar concentration of precursor.
It shows a very intense emission peaks around 378nm, the UV emission has been claimed to be
due the near–band edge emission NBE or recombination of free exciton-exciton collision
process[29], the intensity of this peaks was increased with the molar concentration , also the weak
peaks appears in 432 nm only in the lower precursors concentration 0.05M and 0.1M attributed
of the presence of defects in this films, this results confirm the next results obtained in DRX
spectra , and RAMAN spectra, when the improvement of the quality the crystal is investigated
with the increasing of precursor concentration.
400 600 800 1000 1200
0
10
20
30
0
10
20
30
R
(%)
0.05 M
0.1 M
0.15 M
0.2 M
λ (nm)
Figure 11:Total reflectivity of ZnO thin film growth in different molar concentrations
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
22
340 360 380 400 420 440 460 480
-0,02
0,00
0,02
0,04
0,06
0,08
0,10
0,12
0,14
0,16
0,18
wavelenght (nm)
PL
intensity
(a.u)
0.05M
0.1M
0.15M
0.2M
Figure 12: The PL spectrum of the ZnO thin film
7. CONCLUSION
In the present work, ZnO thin films were deposited by a simple and cheap deposition technique,
namely spray pyrolysis. The X-ray diffraction showed that films have a polycrystalline structure
with an orientation according to the c-axis corresponding to the (002) crystallographic
orientation. The intensity of this peak and grain size were increasing , With the increase in molar
concentration .The Raman result confirms the high quality of the crystal. The FTIR shows the
existence of the Zn-O band between 500-400 cm-1
and the O-H moiety emanating from water in
3556 cm-1
.
The optical measurements have shown a decrease in the transmission T (%) with an increase in
the molarity dueto the surface roughness. The band gap values were decreased from 3.64 eV to
3.15 eV as molarity of the solution increased for 0.05 M to 0.2 M. The main results are a decrease
of surface reflectivity from 12% to about 10%.
The PL spectra have shown the existence of different defects in the visible range of ZnO thin film
of the lower molar concentration 0.05M and 0.1M.RAMAN spectra confirm the progress of the
quality of the films in the higher precursor concentration 0.15M and 0.2M.
ACKNOWLEDGMENT
This work was carried out with support from the Tunisian Ministry of Higher Education and
Scientific Research and in the framework of the scientific cooperation Tunisian - Moroccan
(CMPTM)
Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015
23
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Hashim, (2012) “Growth of High-Density Zinc Oxide Nanorods on Porous Silicon by Thermal
Evaporation”Materials, 5, 2817-2832

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Effect of Zn Concentration on Structural and Optical Properties of ZnO Thin Films

  • 1. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 DOI : 10.5121/aeij.2015.2402 11 EFFECT OF ZN CONCENTRATION ON STRUCTURAL AND OPTICAL PROPRIETIES OF ZNO THIN FILMS DEPOSITED BY SPRAY PYROLYSIS Z.Yamlahi Alami1,*,M. Salem2, M. Gaidi2,3,J.Elkhamkhami1 1 laboratoire de la matière condensée ,dept .de physique , faculté de sciences Avenue de Sebta, Mhannech I 93002 - Tétouan – Maroc 2 Laboratoire de Photovoltaïque Centre de Recherches et des Technologies de l’Energie, Technopole de Borj-Cédria, BP 95, 2050 Hammam-Lif, Tunisia. 3 Department of Applied Physics, University of Sharjah, P.O. Box 27272, Sharjah, United Arab Emirates ABSTRACT ZnO thin film were deposited by spray pyrolysis on glass substrates, using zinc nitrate as precursor with different molar concentrations varying from 0.05M to 0.2 M. To study the structural proprieties of the film , the different technique was used as the X-ray diffraction, atomic force microscopy (AFM), Raman scattering , and FTIR . The optical properties were explored by transmission, reflectivity and Photoluminescence techniques. The ZnO thin films obtained in this paper are polycrystallines, the grain size increases when the molar concentration of Zn precursor was increasing. The films are transparent in visible region, this transmission values decreases when the molar concentration increase caused by the increasing of surface roughness KEYWORDS: ZnO thin films; spray pyrolysis ; roughness. 1. INTRODUCTION The increasing demand for energy made the solar cells as a new source of energy [1,2] for replace the conventional sources. However , despite the concentrated efforts to develop the PV systems , the high cost of the generated electricity prevents that PV systems are more widely spread, to reduce these cost, efforts to improve efficiency and the searches was concentrating on cheaper materials and structures are undertaken .Thin film nanostructure is an attractive solution due to their unique properties. Zinc oxide (ZnO)[3] is one of the most extensively studied materials as an alternative photo anode to TiO2[4].ZnO thin film has high transparency[5], piezoelectricity[6], room-temperature ferromagnetism[7], and huge magneto-optic[8] effect , it can be grown into many different nanoscale forms, thus allowing various novel devices to be achieved , also doping can improved some proprieties of ZnO [9], like conductivity which may change at will from metallic to insulting (including n-type and p-type conductivity. It has wide band gap energy of 3.37 eV, high
  • 2. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 12 exciton binding energy of 60 meV, a wide range resistivity, high electron Hall mobility (200 cm2.V.s−1 ) and high transparency at room temperature. Some techniques was used to fabricate the ZnO thin film such as magnetron sputtering[10] spray plasma [11], sol gel spin coating[12] , pulsed laser deposition[13], metal-organic chemical vapor deposition and spray pyrolysis[5]. Spray pyrolysis is a versatile technique for deposition of metal oxides because of its cheapness and easy process control which gives the possibility of obtaining films with the required properties for different applications [5]. Different authors reported on the preparation of ZnO thin films by spray technique. In fact, E. Bacaksiz et al. [14] prepared ZnO thin film starting with different solution precursors such as zinc chloride, zinc acetate and zinc nitrate, at 0.1M concentration on glass substrate and at 550°C. It was observed that the nature of precursor affected the structural and optical proprieties of ZnO thin films. The higher value of transmittance was observed in ZnO thin films prepared with zinc nitrate precursors. Mazabala Banto et al [5] studied the effect of precursor concentration on structural, morphological and opto-electric properties of ZnO thin films starting by ZnCl2 dissolved in ethanol and deionized water with different molar concentrations increasing from 0.05M to 0.2M on glass substrate at 400°C and annealing or 5h,in air at 500°C. In this work it was shown that the molarity of precursors affected the properties of ZnO thin film. The film present high transmission (95%) at molar concentration 0.05M. E.U. Masumdar et al. [15] studied the effect of molarity on structural and opto-electric properties of ZnO thin films elaborated by using a precursor solution of zinc acetate in a mixed solvent of 75% methanol and 25 % distilled water. The films were grow with different molar concentration varied from 0.1M to 0.75 M on glass substrate and 450°C, the average transmission of the films varied from 75% to 88%. The main purpose of this work is to obtain ZnO film with suitable proprieties for PV cells to can be used as a transparent conductive oxide (TCO) thin film, to reduce the losses during photovoltaic conversion [28]. In this study, the ZnO films deposited on the glass substrate was fabricated by zinc nitrate by varying molar concentration from 0.05M to 0.2M. To reduce the fabrication cost, the ZnO thin film was prepared without annealing temperature, so we could obtain high transparent, good morphology and high quality of the crystal. 2. EXPERIMENTAL DETAILS 2.1. Materials and preparation ZnO thin films were prepared by spray pyrolysis process from a solution with different molar concentrations of Zn(NO3)2,6H2O precursor (0.05 M, 0.1M, 0.15 M and 0.2M) in 25 ml of deionized water. The spray system used in this work was fully described and schematically presented in [16]. The Zn(NO3)2,6H2O solution was sprayed with a solution spray rates of 2 ml/min onto a preheated glass substrate at 500°C during 10 min, using compressed air as a carrier gas. The nozzle to substrate distance was about 45 cm. The obtained ZnO thin Films are transparent, exhibiting a good adherence to the substrate surfaces.
  • 3. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 13 2.2. Measurements The structural characterization was carried out by X-ray diffraction (XRD) technique using a Bruker D 8 advance X-ray diffractometer with CuKα(k=1.5418˚A) radiation for 2θ values in the range of 25–60°.Film surface morphology was investigated using Atomic Force Microscope(AFM) in tapping mode configuration by a nanoscope III microscope, and Raman spectra were recorded in the 300-700 cm-1 range using a Jobin-Yvon spectrometer (T64000 model) equipped with an Ar+ laser (632.8 nm exciting line) and a CCD detector in a back- scattering geometry. Transmittance spectra were recorded using a UV–vis spectrophotometer in the 350–1200 nm range. The reflectivity spectra of the ZnO thin films surfacewere measured using a LAMBDA 950 UV/Vis/NIR spectrophotometer equipped with an integrating sphere. The composition of as-formed and treated ZnO thin film was analyzed by means of Fourier transform infrared spectroscopy (FTIR).The optical properties were analysed by photoluminescence technique PL) in the range 340-500 nm using a 299 nm line of an Ar laser as an excitation light source. 3. RESULTS AND DISCUSSION 3.1. Structural properties Fig. 1 Demonstrates the XRD patterns of ZnO thin films for different zinc nitrate precursors. The films are polycrystallines with hexagonal Wurtzite structure and no parasite phase is observed. All the graphs of ZnO thin films shown a orientation along the (002) so the c-axis of the crystallites is perpendicular to the substrates, due to the minimization of internal stress and surface free energy [5,17]. By increasing the molar concentration of precursors, the intensity of preferential orientation was increased indicating that the films crystallinity has been improved, small peaks of (001) and (101) orientation also appeared in concentration 0.15 and 0.2M. 20 30 40 50 60 70 80 90 ZnO-0.05M ZnO-0.1M ZnO-0.15M ZnO-0.2M ) (deg 2 ree θ ) 100 ( ) 002 ( ) 101 ( ) 102 ( ) 103 ( Figure 1: XRD patterns of ZnO films prepared with different molar concentration of precursor
  • 4. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 14 The crystallite size was calculated from the (002) diffraction peak using Scherer formula: D = . (1). D is the grain size in a particular orientation, λ is the X-ray wavelength, θ is the diffraction angle corresponding to the particular orientation, β is the width at half maximum intensity (FWHM) of the peak. Table 1 shows the evolution of particle size with the molarity. The results indicated that the crystal quality of ZnO thin film was significantly improved with the increasing in molar concentration. We could have more crystal quality information by use this formula [18]: δ = (2). With D is the average grain size. The dislocation density is the length of dislocation lines per unit volume of the crystal. Larger D and smaller δ values mean better crystallization of the films. Dislocation densities exhibit a decrease with increasing molar concentration, which indicates that the high molar concentration reduced the crystal lattice imperfections. The calculated c parameters were found to be 0.5211, 0.5201, 0.5198, and 0.5195 nm when the molar concentration varied from 0.05 M to 0.2M, compared to 0.5206 for a powder sample. The c parameter values decrease with molar concentration. This defect is related to the stress increases in the plane of the substrate surface. The stress in the plane of the substrate surface, the c-axis strain (εzz) values has been calculated using the following equation [19]: ε = × 100 . (3) where c is the lattice parameter of the strained films calculated from the X ray diffraction data and c0 is the lattice parameter of bulk ZnO. Figure 2 shows the evolution of strain against the molar concentration (C).The strain is reduced when C increases. For 0.05M the stress becomes positive (ɛzz0) suggesting that the film is subjected to tensile stress in the plane of the substrate surface, and to compressive stress for the 0.1M, 0.15M and 0.2M concentrate samples. Table 1: The particle size and dislocation with different precursor concentrations Molar concentration (M) 2θ (degree) of (002) FWHM (degree) Crystallite size D (nm) δ × 10 (nm-2 ) 0.05 34.40 0.82 9.95 10,1007 0.1 34.47 0.30 27.40 1,3319 0.2 34.51 0.25 32.35 0,9496
  • 5. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 15 In thin films, strains originate mainly from the mismatch between the polycrystalline film and the amorphous substrate and/or from the difference in the thermal expansion coefficients of the film and the substrate [20] The external stress parallel to surface of film were calculated from the DRX results using the following equation [21]: (4) σ = 2C − !! !# $$ !$ % ε Where Cii are the elastic constants of ZnO bulk , its values are; C11= 208.8 GPa, C12 = 119.7 GPa, C13 = 104.2 GPa, C '() = 213.8 GPa. Table 2 shows the external stress with different molar concentrations. At 0.05 M the external stress was compressive, and became tensile for the three other concentrations, indicating a relaxation of the structure with the increase of the grain’s size. 0,04 0,06 0,08 0,10 0,12 0,14 0,16 0,18 0,20 0,22 -0,20 -0,15 -0,10 -0,05 0,00 0,05 0,10 zz ε strain molar concentration (M) strain % Figure 2: Evolution of strain vs the molar concentration Table 2: The external stress with different precursor concentrations 3.2. Morphological properties. Fig 3 and 4 show the evolution of the grain size and the 2D. AFM surface morphology as a function of Figure 3 shows that increasing concentration influences the size grain. The grain present the spheres shape with uniform and homogenous distribution on the surface. It when increasing the molarity, a more random distribution of the grains on the surface is observed, which lead to a higher roughness. It is also observed that the particles agglomerated to form a porous structure. The size measures of the particles from the AFM surface images are 13.3nm, 21.5nm, 44.9nm for molar concentration 0.05, 0.1and 0.2 M respectively. These values are higher than the values Molar concentration(M) σ(GPa) 0.05 -23,6077906 0.1 19,31523402 0.15 32,25406444 0.2 45,28236113
  • 6. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 16 calculated from XRD data. This could be explained by the fact that XRD data is an average over a large area (few mm2 ), where AFM gives information about a micrometric area. Fig 5 shows the AFM images 3D of ZnO thin films, the grains are orthogonal to the film surface indicating that the film grows perpendicularly to the substrate. The fig 6 shows the average surface roughness (Rms). The Rms varies from 8.34 nm to 20.54 nm when molar concentration increases from 0.05 M to 0.2M. This evolution of the surface roughness is as a result of the grain size increasing. Figure3: AFM images 2D of ZnO thin film in different molar concentration 0,04 0,06 0,08 0,10 0,12 0,14 0,16 0,18 0,20 0,22 10 15 20 25 30 35 40 45 molar concentration (M) grain size (nm) Figure 4: Evolution of the grain size against the molar concentration
  • 7. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 17 Figure 1: The AFM images 3D of ZnO thin films in different molar concentration 0,04 0,06 0,08 0,10 0,12 0,14 0,16 0,18 0,20 0,22 8 10 12 14 16 18 20 22 surface roughness(nm) molar concentration (M) surface roughness in different concentration Figure 6: Evolution of RMS according the molar concentration 3.3. FTIR The FTIR analysis of ZnO thin film is shown in fig 7.The shoulder observed at 3556 cm-1 in all samples corresponds to the O-H moiety emanating from water [22].The very smalls peak for N-H stretching at 2940 cm-1 and 2450 cm-1 . The last peak illustrates the Zn-O at 500 - 400 cm-1 [23]. 3.4. Raman Raman spectra of the films were taken in order to confirm the presence of the Wurtzite phase in the ZnO thin films. ZnO in the hexagonal structures with C*+ , symmetry each unit cell has 4 atoms and occupies 2b sites of symmetry. The group theory predicts eight sets of phonon normal modes at the Γ point, namely, 1A1 + 1E1 +2B1 +2E2[24].
  • 8. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 18 Figure 8 shows a dominate mode centered at 437cm-1 which shifted to , the red shift (2cm-1 ) for molar concentration of 0.15M. All samples present a peak with strong intensity corresponding to E2 (H)[25],E2(H) mode involving mainly Zn motion, which corresponds to band characteristic of Wurtzite phase the lowest E1(LO) for all the sample appears around 582 cm-1 . The high intensity of the E2 mode and lowest E1 (LO) mode indicate the higher quality of crystal in different concentrations. 4000 3500 3000 2500 2000 1500 1000 500 O-H wave number (cm -1 ) tra n s m itta n c e % ZnO_ 0.05M ZnO_ 0.1M ZnO_ 0.15M ZnO_ 0.2M Zn-O N-H N-H Figure7: The FTIR analysis of ZnO thin film synthesized with different molar concentrations 400 450 500 550 600 650 700 200 intensity (u.a) Raman shift (cm -1 ) ZnO-0.05M ZnO-0.1M ZnO-0.15M ZnO-0.2M E2H E1(LO) Figure 8: Raman spectra of ZnO prepared by spray pyrolysis with different molar concentrations
  • 9. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 19 3.5. Optical properties. 3.5.1. Transmission The optical transmission curves of ZnO thin films recorded as a function of wavelength in the range of 200 nm to 1200nm are shown in fig9. All the films are mostly transparent in the visible region. However, the transmission goes down from 93% to 73% when the concentration increased from 0.05 M to 0.2M.All the films are highly absorbent in UV. The reduction of transmittance at higher molar concentration may be attributed to the increased scattering of photons by increase of the roughness of the surface morphology. All the samples show a sharp absorption edge near to 375 nm in the UV region. This absorption edge was found to have a red shift when increasing the molarity. The optical band gap was determined using method of Tauc [26]; (ahν)²=C(hν-Eg),(5) C is a constant; hν is the photon energy and Eg is the optical band gap. The optical absorption coefficient (a) was calculated using the following equation: a=- -./# (6) were the normalized transmission T was obtained from optical transmission spectra which has been normalized to the highest measured values by setting it to 100% , D the diameters values of the crystal Table 3 shows the values of the energy band gap of ZnO thin films grows in different molar concentration of precursors. The value of the optical band gap is obtained by linearly extrapolating the linear portion to a=0 . With increasing in molar concentration from 0.05M to 0.2M the energy band gap decreased from 3,64 to 3,16 eV, the decreased in band gap energy with increasing in molar concentration could be due to increase in carrier concentration and decrease in strain values. It has been demonstrated earlier the correlation between the direct band gap and the compressive stress of the ZnO thin films [27].
  • 10. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 20 200 400 600 800 1000 1200 0 20 40 60 80 100 Transmittance % Wavelength (nm) ZnO_0.05M ZnO_0.1M ZnO_0.15 ZnO_0.2M Figure 9:Transmission spectra with different molar concentrations 1,5 2,0 2,5 3,0 3,5 4,0 4,5 0 1 2 3 ( α h µ ) 2 x10 8 (eV /cm ) 2 hµ (eV) ZnO_0.05 M ZnO_0.1 M ZnO_0.15M ZnO_0.2 M Figure 10: (αhν)²vs hν plot of thin film with different molar concentrations Table 3: Energy band gap in different molar concentration Samplesmolar concentration (M) 0.05 0.1 0.15 0.2 Eg (eV) 3.64 3.56 3.34 3.15
  • 11. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 21 3.5.2. Reflectance These spectra show the excellent antireflection properties of the ZnO/Glass layer with different concentrations (fig 11). The total reflectivity had a low values in lower molar concentrations due to a lower values of RMS in the lower molar concentration this values increasing from 10% to 12%. Obviously, the increase of surface roughness causes the increase in scattering, reflection on t he fil m sur f ace[ 2 8] , and t hus t he t r ansmi t t ance of t h e fi l m decr eases. 3.6.Photoluminescence proprieties. PL spectra of ZnO thin films are shown in fig 12. It is clearly seen that the photoluminescence intensity depends strongly on the molar concentration of precursor. It shows a very intense emission peaks around 378nm, the UV emission has been claimed to be due the near–band edge emission NBE or recombination of free exciton-exciton collision process[29], the intensity of this peaks was increased with the molar concentration , also the weak peaks appears in 432 nm only in the lower precursors concentration 0.05M and 0.1M attributed of the presence of defects in this films, this results confirm the next results obtained in DRX spectra , and RAMAN spectra, when the improvement of the quality the crystal is investigated with the increasing of precursor concentration. 400 600 800 1000 1200 0 10 20 30 0 10 20 30 R (%) 0.05 M 0.1 M 0.15 M 0.2 M λ (nm) Figure 11:Total reflectivity of ZnO thin film growth in different molar concentrations
  • 12. Advanced Energy: An International Journal (AEIJ), Vol. 2, No. 4, October 2015 22 340 360 380 400 420 440 460 480 -0,02 0,00 0,02 0,04 0,06 0,08 0,10 0,12 0,14 0,16 0,18 wavelenght (nm) PL intensity (a.u) 0.05M 0.1M 0.15M 0.2M Figure 12: The PL spectrum of the ZnO thin film 7. CONCLUSION In the present work, ZnO thin films were deposited by a simple and cheap deposition technique, namely spray pyrolysis. The X-ray diffraction showed that films have a polycrystalline structure with an orientation according to the c-axis corresponding to the (002) crystallographic orientation. The intensity of this peak and grain size were increasing , With the increase in molar concentration .The Raman result confirms the high quality of the crystal. The FTIR shows the existence of the Zn-O band between 500-400 cm-1 and the O-H moiety emanating from water in 3556 cm-1 . The optical measurements have shown a decrease in the transmission T (%) with an increase in the molarity dueto the surface roughness. The band gap values were decreased from 3.64 eV to 3.15 eV as molarity of the solution increased for 0.05 M to 0.2 M. The main results are a decrease of surface reflectivity from 12% to about 10%. The PL spectra have shown the existence of different defects in the visible range of ZnO thin film of the lower molar concentration 0.05M and 0.1M.RAMAN spectra confirm the progress of the quality of the films in the higher precursor concentration 0.15M and 0.2M. ACKNOWLEDGMENT This work was carried out with support from the Tunisian Ministry of Higher Education and Scientific Research and in the framework of the scientific cooperation Tunisian - Moroccan (CMPTM)
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