This document discusses the memristor, a theoretical fourth fundamental circuit element. It describes Leon Chua's theory that voltage, current, charge, and flux are fundamental circuit variables. While capacitors, resistors, and inductors relate these variables, memristors relate flux and charge. The document outlines properties of memristors, including how resistance changes based on charge and applications in fast and dense memory storage. Memristors may enable new technologies like brain-like computing and pattern recognition.

1. THE MISSING ELEMENT OF THE
CIRCUIT THEORY
Presented by
Yasar Shafat Qazi
ECE-10-53

2. 
The Idea

Memristance

Properties of Memristor

HP Memristor

Applications

Benefits & Future

Conclusion

3.  Theory
developed in 1971 by Professor Leon
Chua at University of California.
 Exploring
symmetry between the four
fundamental circuit variables.

4. 
Charge

Voltage

Current

Flux
..and Time
….a clock variable

5. Voltage
(V)
Current
(i)
Charge
(q)
Flux
(Φ)

6. 
Capacitor (Q & V)

Resistor
(V & I)

Inductor
(Φ & I)

7. Voltage
(V)
Capacitor q = C.v
Charge
(q)
Resistor
Current
(i)
v = i.R
v=d
Φ
d
dq /
i=
/dt
t
Φ = L.i
?
No Relation , No device
Inductor
Flux
(Φ)

8. Voltage
(V)
Capacitor q = C.v
Charge
(q)
Resistor
Current
(i)
v = i.R
v=d
Φ
/dt
d
dq /
i=
t
Φ = L.i
Φ=M.q
Memristor
Inductor
Flux
(Φ)

9. A
memristor is Characterized by Memristance
 Memristance
resistance.
is simply charge-dependent
V(t) = Mq(t).I(t)
 Unit
- ohms (Ω)

10. MEMRISTOR
Memristor
Memory
+
Resistor
A Crossbar Array Memristors
Changes Resistance with Applied Voltage
Circuit Symbol:

11. 
Nonvolatile state is encoded by impedance, not by
voltage.

Found when researching ways to overcome Nano-scale
manufacturing issues.

Smaller = Better!

13. Memristance
also varies
with
Frequency
Plot between Voltage & Current across a memristor

14. 2 nm
(-)ve
TiO(2-x)
PT
PT
(+)ve
TiO2
3 nm
Reduced
Oxidized

15.  Applied voltage makes the (+ive) oxygen vacancies to shift
towards the (–ive) voltage.


R(TiO2-x) < R(TiO2)
When w=D, R =RON =Low
& when w=0, R=ROFF=High

16. 
The crossbar topology is
composed of a grid of
horizontal and vertical traces

Forcing the Memristor to its
extreme resistance values (RON
and ROFF)
Nanowires

Concept Of Behavior under
Different
Frequencies
is
Utilized.
Memristors

17. 
Faster boot

Speed: (Semiconductor) < (Memristor)

Density allows for more information to be stored.

Low Power Consumption

18. 
Analog Memory.

Faster than Flash memory.

Innovating Nano Technology due to the fact that
it performs better the smaller it becomes.

19.  Creating
a Analog Computer that
works much faster than Digital ones.
 Pattern
 Brain
recognition and learning.
Like Systems

20. 
Still In Research Phase.

Needs more precise engineering.

No design standards.

21. 
Q, V , I , Φ may not be the only variables in circuit
theory.

There can possibly be more than 4 fundamental
Circuit elements.

Proposed Elements : MemCapacitor & MemInductor