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International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014
DOI : 10.5121/vlsic.2014.5602 9
LOW POWER 16-CHANNEL DATA SELECTOR
FOR BIO-MEDICAL APPLICATIONS
Udary Gnaneshwara Chary1
and Dr.K.S. Rao2
1
Research Scholar, JNTUH & Asst. Prof. ECE Dept,
BVRIT, Narsapur, Medak, India
2
Department of E.C.E, Anurag Group of Institutions, Hyderabad, India
ABSTRACT
This paper demonstrates the design of the 16-channel data selector with improved DTMOS switch logic of
low power, low on-resistance for bio-medical applications, This 16 channel data selector can operate at
dynamic range of 1uV to 0.2V. The ON resistance is achieved 36 ohm with a switching speed of 10MHz
and it Operated at a dual supply voltage ranges from 0.2V. The power dissipation is obtained around
0.04uW. PVT Corner analysis has carried out for the characteristics are mentioned at various
temperatures.
KEYWORDS
Analog Data selector, DTMOS, PVT Corners.
1. INTRODUCTION
One of the instruments that are very much helpful for the cardiac patients is Electrocardiogram
(ECG). ECG is a graphic display of time variant voltages produced by the myocardium during
cardiac cycle. ECG is used to monitor and observe the heart functionality. The bio-potentials
generated from various parts of the body results in the Cardiograph. ECG consists of
instrumentation amplifier, with inverting and non inverting terminals. These inputs are acquired
by the analog data selector which was fed by the different sensing leads connected to the body.
ECG measurement information is collected by electrodes placed at designated locations on the
body. It is the best way to measure and diagnose abnormal rhythms of the heart [1], particularly
abnormal rhythms caused by damage to the conductive tissue that carries electrical signals, or
abnormal rhythms caused by electrolyte imbalances [2]. Electrodes connected to the body in order
to record ECG are called leads. These leads are divided into three types i) Bipolar limb leads ii)
Unipolar limb leads iii) Unipolar chest leads.
These leads collect information which is in the analog form having less amplitude. In order to
process these signal it has to be amplified and hence instrumentation amplifier is required. Two
different analog data selectors are used to acquire the inputs for both the terminals of an
instrumentation amplifier. The DTMOS technique was first introduced in 1994 [3], [4]. Since
then, many novel circuit applications of this technique have been proposed. analog designers must
continuously find low-voltage circuit techniques in order to be consistent with technology trends
[5], [6].Multi-channel data selector system selects one of several analog inputs and forwards the
selected input into a single output line. Data selector of 2n inputs has n selection lines, these
selection lines are used to select one input at a time to appear as the output. Here selection lines
are generated by decoder.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014
10
2. DESIGN OF A CMOS SWITCH
The complementary-MOS process (CMOS) consists of P-channel and N- channel MOSFETs.
CMOS switch can be obtained by connecting the PMOS and NMOS devices in parallel form.
This combination reduces the on-resistance, and also produces a resistance which varies much
less with signal voltage.
The ideal analog switch has low on-resistance, infinite off resistance and zero time delay. In
practice, a CMOS analog switch doesn’t meet any of these criteria. In the ON state, its resistance
is few ohms, while in the OFF state, the resistance increases to several mega ohms. MOSFET
transistors are bilateral, they can switch positive and negative voltages and conduct positive and
negative currents with equal ease.
The DTMOS technique is mostly used in digital applications in which the gate and body of the
MOSFET are tied and threshold voltage changes dynamically by using the relationship from
equation.
This is to reduce the leakage current during off state and reducing the threshold voltage during on
state to increase the overdrive voltage. It is also possible to use the DTMOS technique in bulk
CMOS technology for analog circuit applications. However, in analog applications the body
terminal of the MOSFET transistor is normally used as a fourth terminal.
In the standard bulk CMOS technology, it is possible to use the body of PMOS transistors as a
fourth terminal to the MOSFET. Dynamic threshold MOS transistor body tied- to gate DTMOS
Figure 1 & 2 can be operated at low power supply while maintaining a large drain current for high
speed application, without introducing any extra amount of standby current, therefore it is suitable
for low voltage VLSI applications.
Figure 1 CMOS analog switch with body biasing
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014
11
Figure 2 Testing circuit diagram of analog switch
The output resistance of MOS transistors is reduced as CMOS technology scales down, which
consequently reduces the maximum achievable gain of the transistor. Similarly, the reduced
output resistance makes the design of supply independent biasing network a challenging task.
When the gate voltage is HIGH, the body bias of n-MOSFET is VDD and body bias of p-
MOSFET is VSS. The source substrate junctions of both the transistors are forward biased.
The transmission gate is ON. When it is LOW, the body bias of n-MOSFET is switched to VSS
and p-MOSFET switched to VDD. When the source-substrate junctions of both the transistors are
reversed biased. The transmission gate is fully “off”.
3. 16 CHANNEL DATA SELECTOR
Data selector has been designed by using decoder and the switch logic. The output of the
decoder allows the switch to pass the any one of the no of input signals. Decoder is a
combinational circuit that converts binary information from 'n' coded inputs to a maximum of 2n
unique outputs. From 2n outputs, any of the one output is at logic high state remaining outputs
at the logic low state. In 16-channel Data selector, having four selection inputs are applied to
the decoder and hence producing 16 unique outputs. These are acts as control signals to the 16
different switches, allowing only one switch to be ON- state and that corresponding input of the
switch is collected by the output terminal.
The Figure 3. shows CMOS 16-Channel analog data selector which consists of 16 switches are
used to process the input depends on the selection line. Selection lines are from the 4 to 16
decoder.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014
12
Figure 3. 16 Channel Data selector
4. RESULTS
4.1 Switching Frequency vs. Power Dissipation
The CMOS analog switch and 16 to 1 data selector multiplexer simulated and outputs are shown
in figure 4 and 5. As the switching frequency increases the speed of the device also increases and
at different switching frequencies of data selector the power dissipation values are calculated. As
the increase in the switching frequency causes the load capacitor to charge and discharge very
quickly the dissipation increases tremendously. Fig 6 shows the relation between the switching
frequency and the power dissipation. Also for different power supply the power dissipation is
plotted for different switching frequencies. The power dissipation is almost equal for switching
frequencies up to 10 KHz with same power supply voltage. After this point of fswitch, the
dissipation increases rapidly.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014
13
Figure 4. CMOS Analog Switch Output Wave Form
Figure 5. 16 Channel Data selector output with different amplitude
Supply ±200mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF.
Table 1 Power dissipation for ±200mV supply voltage
fSwitch I Leakage (nA) Pstatic (nW) PDynamic (µW) PTotal (µW)
1K 270 9.624 0.040 0.04962
10K 270 9.874 0.400 0.40987
100K 270 10.67 4.000 4.010
1M 270 20.11 40.000 40.02
Supply ±250mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF.
Table 2 Power dissipation for ±250mV supply voltage
fSwitch I Leakage(nA) Pstatic(nW) PDynamic(µW) PTotal(µW)
1K 1.1518 33.18 0.0625 0.0956
10K 1.1518 34.04 0.625 0.6590
100K 1.1518 34.83 6.250 6.284
1M 1.1518 50.06 62.500 62.55
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014
14
Supply ±300mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF.
Table 3 Power dissipation for ±300mV supply voltage
fSwitch I Leakage(nA) Pstatic(nW) PDynamic(µW) PTotal(µW)
1K 4.023 154.6 0.090 0.2446
10K 4.023 157.5 0.900 1.057
100K 4.023 157 9.000 9.157
1M 4.023 179.6 90.000 90.179
Supply ±350mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF.
Table 4 Power dissipation for ±350mV supply voltage
fSwitch I Leakage(nA) Pstatic(nW) PDynamic(µW) PTotal(µW)
1K 10.709 807 0.1225 0.929
10K 10.709 815.1 1.225 2.040
100K 10.709 810.3 12.250 13.31
1M 10.709 842.1 122.500 123.342
Supply ±400mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF.
Table 5 Power dissipation for ±350mV supply voltage
fSwitch I Leakage(nA) Pstatic(nW) PDynamic(µW) PTotal(µW)
1K 22.16 4.14 0.160 4.3
10K 22.16 4.169 1.600 5.769
100K 22.16 4.154 16.000 20.154
1M 22.16 4.197 160.000 164.197
The Tables show power analysis of analog data selector at different switching frequencies and at
different supply voltages 0.2V, 0.25V, 0.3V, 0.35V, 0.4V). As the switching frequency increases
power dissipation also increases because dynamic power is CV2
fswitch.
Figure 6 Switching Frequency Vs Power Dissipation
4.2 CORNER ANALYSIS
A process corner is an example of a technique that refers to a variation of fabrication parameters
used in applying an integrated circuit design. The increasing sensitivity of circuit performance to
process, temperature, and supply voltage (PVT) variations has led to an increase in the number of
process corners that are required to verify circuit timing[8],[9].
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014
15
Table 6 Corner analysis of CMOS analog switch at input voltage of 1mV.
VDD
(V)
FF SS TT
-40°C 27°C 125°C -40°C 27°C 125°C -40°C 27°C 125°C
0.3 0.975 0.989 0.979 0.975 0.989 0.979 0.975 0.989 0.979
0.35 0.973 0.990 0.980 0.973 0.990 0.980 0.973 0.990 0.980
0.4 0.973 0.988 0.979 0.973 0.988 0.979 0.973 0.988 0.979
The Table 6 shows the output voltage information of the switch for various process corners. The
voltages mentioned in the above are in Volts.
Table 7 Corner analysis (average current) of CMOS analog switch at input voltage of 1mV
VDD
(V)
FF SS TT
-40°C 27°C 125°C -40°C 27°C 125°C -40°C 27°C 125°C
0.3 28.67 202.3 4,180 22.58 126.3 2,270 25.04 165.3 3,225
0.35 28.67 202.3 4180 22.58 126.3 2,270 25.04 165.3 3,225
0.4 28.67 202.3 4,184 22.58 126.3 2,270 25.04 165.3 3,225
The Table 7 shows corner analysis of CMOS analog switch at different supply voltages and
different temperatures. The currents values mentioned in the Table VII are measured in nA.
The output current is measured by applying the input voltage of 1mV.
5. CONCLUSION
The proposed 16 channel data selector is an efficient design that suits the requirements of
portable, low power Bio-medical application. This design is tested for several supply
voltages with various switching frequencies and the PVT corner analysis has been included in
the design testing. At 200mV supply, 100KHz switching frequency the power dissipation is
4µW and 20.15µW at 400mV supply with same switching frequency. From the
experimental results mentioned its suits for low power, portable bio-medical applications.
REFERENCES
[1] Braunwald E. (Editor), Heart Disease: A Textbook of Cardiovascular Medicine, Fifth Edition, p. 108,
Philadelphia, W.B. Saunders Co., 1997. ISBN 0-7216-5666-8.
[2] Van Mieghem, C; Sabbe, M; Knockaert, D (2004). "The Clinical value of the ECG in no cardiac
conditions” Chest 125(4):1561–76.Doi:10.1378/chest.125.4.1561.PMID 15078775.
[3] F. Assaderaghi, D. Sinitsky, S. Parke, J. Bokor, P. K. Ko, and C. Hu, “A Dynamic Threshold voltage
MOSFET (DTMOS) for ultra- low voltage operation,” in Int. Electron Devices Meeting, Techn.
Digest, 1994, pp.b809–812.
International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014
16
[4] F. Assaderaghi, “DTMOS: Its derivatives and variations, and their potential applications,” in Proc.
12th Int. Conf. Microelectron., 2000, pp.9–10.
[5] F. Maloberti, F. Francesoni, P. Malcovati, and O. J. A. P. Nys, “Design considerations on low-
voltage low-power data converters,” IEEE Trans. Circuits Syst. I, Fundam. Theory Appl., vol. 42, no.
11, pp.853–863, Nov. 1995.
[6] V. Peluso, P. Vancoreland, A. M. Marques, M. S. J. Steyaert, and W. Sansen, “A 900-mV low-
power delta-sigma A/D converter with 77-dB dynamic range,” IEEE J. Solid-State Circuits, vol. 33,
no. 12,pp. 1887–1897, Dec. 1998.
[7] C. Zhang, A. Srivastava and P. K. Ajmera, “0.8-V ultra low-power CMOS analog multiplexer for
remote biological and chemical signal processing,” Proc. of SPIE, Vol 5389, pp.13-19, 2004.
[8] J. J. Nian, S. H. Tsai, and C. Y. Huang. A unified multi-corner multi-mode static timing analysis
engine. In ASP-DAC, pages 669–674, 2010.
[9] S. Birla, M. Pattanaik and R. K. Singh, “Static Noise Margin Analysis of Various SRAM
Topologies,” IACSIT International Journal of Engineering and Technology, Vol. 3, No. 3, 2011, pp.
304-309.
[10] Weste, Neil H.E. and Harris, David (2005). CMOS VLSI Design: A Circuits and Systems
Perspective, 3rd Ed., Addison-Wesley, pp.231-235. ISBN 0-321-14901-7.
AUTHORS
Udary Gnaneshwara Chary, obtained M. Tech degree in VLSI System Design from
VNR Vignan Jyothi Institute of Technology. Presently he is pursuing PhD from JNTU
Hyderabad He is an Assistant Professor in B. V. Raju Institute of technology
Narsapur, Medak. He had 7 years of teaching experience. His research interests include
CMOS Analog design.
Dr. K. S. Rao obtained his B. Tech, M. Tech and Ph.D. in Electronics and
Instrumentation Engineering in the years 1986, 89 and 97 from KITS, REC Warangal
and VRCE Nagpur respectively. He had 25 years of teaching and research experience
and worked in all academic positions, presently he is the professor & Director Anurag
Group of Institutions (Autonomous) Hyderabad. His fields of interests are Signal
Processing, Neural Networks and VLSI system design.

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Low Power 16-Channel Data Selector for Bio-Medical Applications

  • 1. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014 DOI : 10.5121/vlsic.2014.5602 9 LOW POWER 16-CHANNEL DATA SELECTOR FOR BIO-MEDICAL APPLICATIONS Udary Gnaneshwara Chary1 and Dr.K.S. Rao2 1 Research Scholar, JNTUH & Asst. Prof. ECE Dept, BVRIT, Narsapur, Medak, India 2 Department of E.C.E, Anurag Group of Institutions, Hyderabad, India ABSTRACT This paper demonstrates the design of the 16-channel data selector with improved DTMOS switch logic of low power, low on-resistance for bio-medical applications, This 16 channel data selector can operate at dynamic range of 1uV to 0.2V. The ON resistance is achieved 36 ohm with a switching speed of 10MHz and it Operated at a dual supply voltage ranges from 0.2V. The power dissipation is obtained around 0.04uW. PVT Corner analysis has carried out for the characteristics are mentioned at various temperatures. KEYWORDS Analog Data selector, DTMOS, PVT Corners. 1. INTRODUCTION One of the instruments that are very much helpful for the cardiac patients is Electrocardiogram (ECG). ECG is a graphic display of time variant voltages produced by the myocardium during cardiac cycle. ECG is used to monitor and observe the heart functionality. The bio-potentials generated from various parts of the body results in the Cardiograph. ECG consists of instrumentation amplifier, with inverting and non inverting terminals. These inputs are acquired by the analog data selector which was fed by the different sensing leads connected to the body. ECG measurement information is collected by electrodes placed at designated locations on the body. It is the best way to measure and diagnose abnormal rhythms of the heart [1], particularly abnormal rhythms caused by damage to the conductive tissue that carries electrical signals, or abnormal rhythms caused by electrolyte imbalances [2]. Electrodes connected to the body in order to record ECG are called leads. These leads are divided into three types i) Bipolar limb leads ii) Unipolar limb leads iii) Unipolar chest leads. These leads collect information which is in the analog form having less amplitude. In order to process these signal it has to be amplified and hence instrumentation amplifier is required. Two different analog data selectors are used to acquire the inputs for both the terminals of an instrumentation amplifier. The DTMOS technique was first introduced in 1994 [3], [4]. Since then, many novel circuit applications of this technique have been proposed. analog designers must continuously find low-voltage circuit techniques in order to be consistent with technology trends [5], [6].Multi-channel data selector system selects one of several analog inputs and forwards the selected input into a single output line. Data selector of 2n inputs has n selection lines, these selection lines are used to select one input at a time to appear as the output. Here selection lines are generated by decoder.
  • 2. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014 10 2. DESIGN OF A CMOS SWITCH The complementary-MOS process (CMOS) consists of P-channel and N- channel MOSFETs. CMOS switch can be obtained by connecting the PMOS and NMOS devices in parallel form. This combination reduces the on-resistance, and also produces a resistance which varies much less with signal voltage. The ideal analog switch has low on-resistance, infinite off resistance and zero time delay. In practice, a CMOS analog switch doesn’t meet any of these criteria. In the ON state, its resistance is few ohms, while in the OFF state, the resistance increases to several mega ohms. MOSFET transistors are bilateral, they can switch positive and negative voltages and conduct positive and negative currents with equal ease. The DTMOS technique is mostly used in digital applications in which the gate and body of the MOSFET are tied and threshold voltage changes dynamically by using the relationship from equation. This is to reduce the leakage current during off state and reducing the threshold voltage during on state to increase the overdrive voltage. It is also possible to use the DTMOS technique in bulk CMOS technology for analog circuit applications. However, in analog applications the body terminal of the MOSFET transistor is normally used as a fourth terminal. In the standard bulk CMOS technology, it is possible to use the body of PMOS transistors as a fourth terminal to the MOSFET. Dynamic threshold MOS transistor body tied- to gate DTMOS Figure 1 & 2 can be operated at low power supply while maintaining a large drain current for high speed application, without introducing any extra amount of standby current, therefore it is suitable for low voltage VLSI applications. Figure 1 CMOS analog switch with body biasing
  • 3. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014 11 Figure 2 Testing circuit diagram of analog switch The output resistance of MOS transistors is reduced as CMOS technology scales down, which consequently reduces the maximum achievable gain of the transistor. Similarly, the reduced output resistance makes the design of supply independent biasing network a challenging task. When the gate voltage is HIGH, the body bias of n-MOSFET is VDD and body bias of p- MOSFET is VSS. The source substrate junctions of both the transistors are forward biased. The transmission gate is ON. When it is LOW, the body bias of n-MOSFET is switched to VSS and p-MOSFET switched to VDD. When the source-substrate junctions of both the transistors are reversed biased. The transmission gate is fully “off”. 3. 16 CHANNEL DATA SELECTOR Data selector has been designed by using decoder and the switch logic. The output of the decoder allows the switch to pass the any one of the no of input signals. Decoder is a combinational circuit that converts binary information from 'n' coded inputs to a maximum of 2n unique outputs. From 2n outputs, any of the one output is at logic high state remaining outputs at the logic low state. In 16-channel Data selector, having four selection inputs are applied to the decoder and hence producing 16 unique outputs. These are acts as control signals to the 16 different switches, allowing only one switch to be ON- state and that corresponding input of the switch is collected by the output terminal. The Figure 3. shows CMOS 16-Channel analog data selector which consists of 16 switches are used to process the input depends on the selection line. Selection lines are from the 4 to 16 decoder.
  • 4. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014 12 Figure 3. 16 Channel Data selector 4. RESULTS 4.1 Switching Frequency vs. Power Dissipation The CMOS analog switch and 16 to 1 data selector multiplexer simulated and outputs are shown in figure 4 and 5. As the switching frequency increases the speed of the device also increases and at different switching frequencies of data selector the power dissipation values are calculated. As the increase in the switching frequency causes the load capacitor to charge and discharge very quickly the dissipation increases tremendously. Fig 6 shows the relation between the switching frequency and the power dissipation. Also for different power supply the power dissipation is plotted for different switching frequencies. The power dissipation is almost equal for switching frequencies up to 10 KHz with same power supply voltage. After this point of fswitch, the dissipation increases rapidly.
  • 5. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014 13 Figure 4. CMOS Analog Switch Output Wave Form Figure 5. 16 Channel Data selector output with different amplitude Supply ±200mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF. Table 1 Power dissipation for ±200mV supply voltage fSwitch I Leakage (nA) Pstatic (nW) PDynamic (µW) PTotal (µW) 1K 270 9.624 0.040 0.04962 10K 270 9.874 0.400 0.40987 100K 270 10.67 4.000 4.010 1M 270 20.11 40.000 40.02 Supply ±250mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF. Table 2 Power dissipation for ±250mV supply voltage fSwitch I Leakage(nA) Pstatic(nW) PDynamic(µW) PTotal(µW) 1K 1.1518 33.18 0.0625 0.0956 10K 1.1518 34.04 0.625 0.6590 100K 1.1518 34.83 6.250 6.284 1M 1.1518 50.06 62.500 62.55
  • 6. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014 14 Supply ±300mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF. Table 3 Power dissipation for ±300mV supply voltage fSwitch I Leakage(nA) Pstatic(nW) PDynamic(µW) PTotal(µW) 1K 4.023 154.6 0.090 0.2446 10K 4.023 157.5 0.900 1.057 100K 4.023 157 9.000 9.157 1M 4.023 179.6 90.000 90.179 Supply ±350mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF. Table 4 Power dissipation for ±350mV supply voltage fSwitch I Leakage(nA) Pstatic(nW) PDynamic(µW) PTotal(µW) 1K 10.709 807 0.1225 0.929 10K 10.709 815.1 1.225 2.040 100K 10.709 810.3 12.250 13.31 1M 10.709 842.1 122.500 123.342 Supply ±400mV, VIN = 1mV, Input Signal frequency = 100Hz, CL=1nF. Table 5 Power dissipation for ±350mV supply voltage fSwitch I Leakage(nA) Pstatic(nW) PDynamic(µW) PTotal(µW) 1K 22.16 4.14 0.160 4.3 10K 22.16 4.169 1.600 5.769 100K 22.16 4.154 16.000 20.154 1M 22.16 4.197 160.000 164.197 The Tables show power analysis of analog data selector at different switching frequencies and at different supply voltages 0.2V, 0.25V, 0.3V, 0.35V, 0.4V). As the switching frequency increases power dissipation also increases because dynamic power is CV2 fswitch. Figure 6 Switching Frequency Vs Power Dissipation 4.2 CORNER ANALYSIS A process corner is an example of a technique that refers to a variation of fabrication parameters used in applying an integrated circuit design. The increasing sensitivity of circuit performance to process, temperature, and supply voltage (PVT) variations has led to an increase in the number of process corners that are required to verify circuit timing[8],[9].
  • 7. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014 15 Table 6 Corner analysis of CMOS analog switch at input voltage of 1mV. VDD (V) FF SS TT -40°C 27°C 125°C -40°C 27°C 125°C -40°C 27°C 125°C 0.3 0.975 0.989 0.979 0.975 0.989 0.979 0.975 0.989 0.979 0.35 0.973 0.990 0.980 0.973 0.990 0.980 0.973 0.990 0.980 0.4 0.973 0.988 0.979 0.973 0.988 0.979 0.973 0.988 0.979 The Table 6 shows the output voltage information of the switch for various process corners. The voltages mentioned in the above are in Volts. Table 7 Corner analysis (average current) of CMOS analog switch at input voltage of 1mV VDD (V) FF SS TT -40°C 27°C 125°C -40°C 27°C 125°C -40°C 27°C 125°C 0.3 28.67 202.3 4,180 22.58 126.3 2,270 25.04 165.3 3,225 0.35 28.67 202.3 4180 22.58 126.3 2,270 25.04 165.3 3,225 0.4 28.67 202.3 4,184 22.58 126.3 2,270 25.04 165.3 3,225 The Table 7 shows corner analysis of CMOS analog switch at different supply voltages and different temperatures. The currents values mentioned in the Table VII are measured in nA. The output current is measured by applying the input voltage of 1mV. 5. CONCLUSION The proposed 16 channel data selector is an efficient design that suits the requirements of portable, low power Bio-medical application. This design is tested for several supply voltages with various switching frequencies and the PVT corner analysis has been included in the design testing. At 200mV supply, 100KHz switching frequency the power dissipation is 4µW and 20.15µW at 400mV supply with same switching frequency. From the experimental results mentioned its suits for low power, portable bio-medical applications. REFERENCES [1] Braunwald E. (Editor), Heart Disease: A Textbook of Cardiovascular Medicine, Fifth Edition, p. 108, Philadelphia, W.B. Saunders Co., 1997. ISBN 0-7216-5666-8. [2] Van Mieghem, C; Sabbe, M; Knockaert, D (2004). "The Clinical value of the ECG in no cardiac conditions” Chest 125(4):1561–76.Doi:10.1378/chest.125.4.1561.PMID 15078775. [3] F. Assaderaghi, D. Sinitsky, S. Parke, J. Bokor, P. K. Ko, and C. Hu, “A Dynamic Threshold voltage MOSFET (DTMOS) for ultra- low voltage operation,” in Int. Electron Devices Meeting, Techn. Digest, 1994, pp.b809–812.
  • 8. International Journal of VLSI design & Communication Systems (VLSICS) Vol.5, No.6, December 2014 16 [4] F. Assaderaghi, “DTMOS: Its derivatives and variations, and their potential applications,” in Proc. 12th Int. Conf. Microelectron., 2000, pp.9–10. [5] F. Maloberti, F. Francesoni, P. Malcovati, and O. J. A. P. Nys, “Design considerations on low- voltage low-power data converters,” IEEE Trans. Circuits Syst. I, Fundam. Theory Appl., vol. 42, no. 11, pp.853–863, Nov. 1995. [6] V. Peluso, P. Vancoreland, A. M. Marques, M. S. J. Steyaert, and W. Sansen, “A 900-mV low- power delta-sigma A/D converter with 77-dB dynamic range,” IEEE J. Solid-State Circuits, vol. 33, no. 12,pp. 1887–1897, Dec. 1998. [7] C. Zhang, A. Srivastava and P. K. Ajmera, “0.8-V ultra low-power CMOS analog multiplexer for remote biological and chemical signal processing,” Proc. of SPIE, Vol 5389, pp.13-19, 2004. [8] J. J. Nian, S. H. Tsai, and C. Y. Huang. A unified multi-corner multi-mode static timing analysis engine. In ASP-DAC, pages 669–674, 2010. [9] S. Birla, M. Pattanaik and R. K. Singh, “Static Noise Margin Analysis of Various SRAM Topologies,” IACSIT International Journal of Engineering and Technology, Vol. 3, No. 3, 2011, pp. 304-309. [10] Weste, Neil H.E. and Harris, David (2005). CMOS VLSI Design: A Circuits and Systems Perspective, 3rd Ed., Addison-Wesley, pp.231-235. ISBN 0-321-14901-7. AUTHORS Udary Gnaneshwara Chary, obtained M. Tech degree in VLSI System Design from VNR Vignan Jyothi Institute of Technology. Presently he is pursuing PhD from JNTU Hyderabad He is an Assistant Professor in B. V. Raju Institute of technology Narsapur, Medak. He had 7 years of teaching experience. His research interests include CMOS Analog design. Dr. K. S. Rao obtained his B. Tech, M. Tech and Ph.D. in Electronics and Instrumentation Engineering in the years 1986, 89 and 97 from KITS, REC Warangal and VRCE Nagpur respectively. He had 25 years of teaching and research experience and worked in all academic positions, presently he is the professor & Director Anurag Group of Institutions (Autonomous) Hyderabad. His fields of interests are Signal Processing, Neural Networks and VLSI system design.