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VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 1
Lab Manual
Smt. Indira Gandhi College of Engineering,
Navi Mumbai
Department of Electronics and Telecommunication
Engineering
Subject: VLSI Design
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 2
Aim: Draw a layout of Resistive Load Inverter & CMOS Inverter using CMOS 0.12um
technology and simulate its transient characteristics.
CMOS 0.12um TECHNOLOGY using Microwind3
Draw diagram:
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 3
Output Simulation Waveforms:
Conclussion:
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 4
AIM: to Design CMOS Inverter
CMOS 0.12um TECHNOLOGY using Microwind3
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 5
Output Simulation Waveforms
Conclusion:
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 6
Aim: Draw a layout of CMOS NAND Gate using CMOS 0.12um technology and
simulate its transient characteristics.
CMOS 0.12um TECHNOLOGY using Microwind3
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 7
Output simulation waveform:
Conclussion:
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 8
Aim: To draw a layput of CMOS NOR gate using CMOS 0.12 um technology and
simulate its transient characteristics
CMOS 0.12um TECHNOLOGY using Microwind3
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 9
Output Simulation waveform:
Conclussion:
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 10
Aim : Draw a layout of CMOS Half Adder Gate using CMOS 0.12um
technology and simulate its transient characteristics.
CMOS 0.12um TECHNOLOGY using Microwind3
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 11
Simulation Waveforms:
Conclussion:
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 12
Aim : Draw a layout of CMOS Full Adder Gate using CMOS 0.12um
technology and simulate its transient characteristics.
CMOS 0.12um TECHNOLOGY using Microwind3
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 13
Simulation Waveforms
Conclussion:
VLSI DESIGN LAB MANUAL
FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 14
Aim : Compare Transfer Characteristics of CMOS, Resistive Load and
NMOS Load Inverter.
CMOS 0.12um TECHNOLOGY using Microwind3

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VLSI Design_LAB MANUAL By Umakant Gohatre

  • 1. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 1 Lab Manual Smt. Indira Gandhi College of Engineering, Navi Mumbai Department of Electronics and Telecommunication Engineering Subject: VLSI Design
  • 2. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 2 Aim: Draw a layout of Resistive Load Inverter & CMOS Inverter using CMOS 0.12um technology and simulate its transient characteristics. CMOS 0.12um TECHNOLOGY using Microwind3 Draw diagram:
  • 3. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 3 Output Simulation Waveforms: Conclussion:
  • 4. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 4 AIM: to Design CMOS Inverter CMOS 0.12um TECHNOLOGY using Microwind3
  • 5. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 5 Output Simulation Waveforms Conclusion:
  • 6. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 6 Aim: Draw a layout of CMOS NAND Gate using CMOS 0.12um technology and simulate its transient characteristics. CMOS 0.12um TECHNOLOGY using Microwind3
  • 7. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 7 Output simulation waveform: Conclussion:
  • 8. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 8 Aim: To draw a layput of CMOS NOR gate using CMOS 0.12 um technology and simulate its transient characteristics CMOS 0.12um TECHNOLOGY using Microwind3
  • 9. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 9 Output Simulation waveform: Conclussion:
  • 10. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 10 Aim : Draw a layout of CMOS Half Adder Gate using CMOS 0.12um technology and simulate its transient characteristics. CMOS 0.12um TECHNOLOGY using Microwind3
  • 11. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 11 Simulation Waveforms: Conclussion:
  • 12. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 12 Aim : Draw a layout of CMOS Full Adder Gate using CMOS 0.12um technology and simulate its transient characteristics. CMOS 0.12um TECHNOLOGY using Microwind3
  • 13. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 13 Simulation Waveforms Conclussion:
  • 14. VLSI DESIGN LAB MANUAL FACULTY: UMAKANT B. GOHATRE, SIGCE, NAVI MUMBAI 14 Aim : Compare Transfer Characteristics of CMOS, Resistive Load and NMOS Load Inverter. CMOS 0.12um TECHNOLOGY using Microwind3