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Third-Generation Semiconductor: The Next Wave?

The document provides an overview of third-generation semiconductors, specifically gallium nitride (GaN) and silicon carbide (SiC), highlighting their evolution from earlier generations and their advantages in powering advanced technologies like electric vehicles and renewable energy. It details the significant properties of GaN and SiC that enable higher efficiency, thermal conductivity, and application specificity, as well as challenges faced in their production. The report emphasizes the growing importance and potential of these materials in modern electronic applications.

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Third-Generation Third-Generation Semiconductor Semiconductor For more info, drop us an email at communications@vertexholdings.com
Agend 2 | THIRD-GENERATION SEMICONDUCTOR An introduction to 3rd Generation Semiconductor 1 Deep Dive into GaN 2 Deep Dive into SiC 3 Summary 4
Semiconductors are essential enablers that power many of the cutting- edge digital devices we use today. The global semiconductor industry has evolved over the years and is set to continue its robust growth into the next decade due to emerging technologies and applications in areas such as Electric Vehicles (EVs), 5G and the Internet of Things, renewable energy, photovoltaics (solar) and many other applications. Coupled with R&D investments and the rising demand for cutting-edge electronic products, we are seeing an increase in the number of new applications, and we believe growth is here to stay. Forewor 3 | THIRD-GENERATION SEMICONDUCTOR Vertex Perspectives is a research report for informational purposes only. This is not a recommendation in relation to any named particular companies and no warranty or guarantee is provided. Any references to particular companies are for illustrative purposes only. There is no assurance that the Adviser will make any investments with the same or similar characteristics as any investment presented. The reader should not assume that an investment identified was or will be profitable. Past Performance is not indicative of future performance, future returns are not guaranteed.
The evolving semiconductor scene 1 Over the years, semiconductors have evolved from the 1st Generation to the current 3rd Generation. Each generation presents different set of benefits and challenges. In this section, we look at the three generations of semiconductors, specifically 3rd Generation semiconductors also known as the Wide Bandgap Semiconductors. 4 | THIRD-GENERATION SEMICONDUCTOR
Intr 1 The first generation of semiconductor materials made use of Silicon and Germanium. However, their properties limited their use in optoelectronic, high-frequency and high power devices. 1st Generation Gallium Arsenide (GaAs) and Indium Phosphide (InP) was mainly used but they were scarce, expensive and toxic thus limiting their usage. ​ 2nd Generation 3 They were made using Gallium Nitride (GaN) and Silicon Carbide (SiC). Suitable for making high power, high frequency, high temperature and radiation resistant devices. 3rd Generation Source: E3S, Department of Electronic and Electrical Engineering Semiconductors have evolved from the 1st Generation to the 3rd Generation 2 5 | THIRD-GENERATION SEMICONDUCTOR Intro
& Allows for higher voltage & more compact High Breakdown Voltage 3rd Generation semiconductors offer 5 key advantages Allows for faster heat transfer ​ Higher Thermal Conductivity Allows higher power efficiency and higher frequency​ Higher Bandgap Higher current and higher frequency Higher Saturation Velocity Higher current (higher power) ​ Higher Melting Point SiC & GaN Source: Harbin Normal University, Power Electronics News, GaN Systems Use cases include all use cases mentioned 6 | THIRD-GENERATION SEMICONDUCTOR Use cases include high temperature power electronics Use cases include all Radio Frequency (RF) communications ​ Use cases include high power electronics Use cases include high temperature power electronics Intr Intro
GaN and SiC are better than conventional Si semiconductors 7 | THIRD-GENERATION SEMICONDUCTOR BREAKDOWN ELECTRIC FIELD STRENGTH Sillicon Carbide (SiC) SiC has a 10x higher breakdown electric field strength than Si. Gallium Nitride (GaN) WIDE BAND GAP SiC has 3x the band gap thus enabling higher power efficiencies and higher voltage use cases. High-speed Trains GaN is able to conduct electrons more than 1000x more efficiently.​ EFFICIENT ELECTRICAL CONDUCTIVITY LOW COST GaN semiconductors can be manufactured on Si substrate with comparable cost to normal Si semiconductor. APPLICATIONS Radio Frequency Power Adaptors APPLICATIONS Source: GaN Systems, EPC, Rohm Semiconductors, Mouser, Woodhead Publishing, Passive Components Intr Intro EV Charging
Physical property differences allow SiC and GaN to be used in specialised applications 8 | THIRD-GENERATION SEMICONDUCTOR High SILICON CARBIDE (SiC) Breakdown Field Strength Electron Mobility PHYSICAL PROPERTY GALLIUM NITRIDE (GaN) Thermal conductivity ​ ​ Melting point ​ ​ 1.3 W/cmK​ ​ Low Higher 5 W/cmK​ ​ High USAGES 2000 ​ ​ cm /Vs​ ​ 2 650 ​ ​ cm /Vs​ ​ 2 SiC is still better suited for higher voltage devices while GaN is used for mid-low voltage use cases. GaN's electrons are faster moving than SiCs making GaN more suitable for higher-frequency applications. Higher thermal conductivity makes SiC highly advantageous in high-power, high-temperature applications. Higher melting point makes SiC suitable for high-temperature applications. Source: Power Electronics News, E3S - refer to the stronger characteristics among the two 3rd Generation Semiconductor materials Intro Intr Intro *Blue and bold text
GaN and SiC are used in specific applications differentiated by voltage tier 9 | THIRD-GENERATION SEMICONDUCTOR Source: Yole Existing Initiatives LOW VOLTAGE HIGH VOLTAGE MEDIUM VOLTAGE <200V 900V 600V 1.2kV 3.3kV 6.5kV GaN SiC GaN + SiC Power Adaptors Photovoltic EV/ HEV UPS Motor Control High-speed Trains Windmill Smart Powergrid Intr Intro Radio Frequency
A deep dive into GaN 2 Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. It is a binary III/V direct bandgap semiconductor that is well-suited for high-power transistors capable of operating at high temperatures. GaN is used in semiconductor power devices, RF components, lasers, photonics and in the future, we may see GaN in sensor technology. 10 | THIRD-GENERATION SEMICONDUCTOR
The development of Gallium Nitride (GaN) has came a long way since 2004 11 | THIRD-GENERATION SEMICONDUCTOR High Electron Mobility Transistors (HEMTs) Enhancement-mode GaN (eGaN) First GaN Power Integrated Ciricuit (IC) Navitas started mass production of GaN powered ICs. Its GaN powered ICs enable up to 3x faster charging in half the size and weight of the silicon-based power electronics. Mass Production of GaN Powered IC HEMT (High Electron Mobility Transistor) gallium nitride (GaN) transistors first appearance was around 2004 with depletion-mode RF transistors made by Eudyna Corporation in Japan. Efficient Power Conversion Corporation (EPC) introduced the first enhancement mode gallium nitride on silicon (eGaN) field effect transistor (FET). Navitas demonstrated its first GaN Power ICs (high-voltage and half-bridge powered IC) using its proprietary AlGaN monolithically-integrated 650V platform. Source: Navitas, EE Power, In Tech Open, GaN Systems, EPC Co, Fibre Optics Online 2004 SEP 2009 JUN 2015 NOV 2019 MAR Ga Intro
To date, these are the key players in the GaN device supply chain focusing on manufacturing and design 12 | THIRD-GENERATION SEMICONDUCTOR Cell components PRODUCTS DESIGN FABS Low Voltage Devices: 100-200V High Voltage Devices: 600-650V Players who propose the design but do not have Fabs to manufacture semiconductors. ​ Fabs (Semiconductor Fabrication Plants) manufactures semiconductors. Adapted from Yole Intro Ga Intro
Ga The two major applications of GaN are Radio Frequency (RF) and Switching Mode Power Supply (SMPS) 13 | THIRD-GENERATION SEMICONDUCTOR Source: Sunpower UK, EE Times Asia, Mouser & Radio frequency (RF) waves are a form of electromagnetic radiation with identified radio frequencies that range from 3kHz to 300 GHz. Typically for RF applications, D- mode GaN is utilised. Radio Frequency (RF) GaN High power density, breakdown voltage, operating frequency, temperature operation and lower energy losses ​ Properties Applications RF Communications Radar System 5G Base Stations SMPS switch mode power supply is a power converter that uses a switching regulator to convert power efficiently. Switching Mode Power Supply (SMPS)​ ​ High power efficiency and more compact Properties Applications DC/DC Converter Intro AC/DC Converter
There are two types of GaN Field Effect Transistors (FETs): D-Mode and E-Mode 14 | THIRD-GENERATION SEMICONDUCTOR AlGaN S G D GaN Substrate 2D Electron Gas Aluminum Nitride Bottom Layer Depletion Mode (D-Mode) Enhancement Mode (E-Mode) The depletion mode transistor is normally on and is turned off with a negative voltage relative to the drain and source electrodes. ​ DIFFERENCES: The enhancement mode transistor is normally off and is turned on by positive voltage applied to the gate. ​ In the basic GaN transistor structure, there are Gate, Source and Drain electrodes. Source: EPC Corporation Intro Ga Intro S G D GaN Substrate AlGaN Field Plate Protective Di- Electric 2D Electron Gas Aluminum Nitride Bottom Layer
A typical e-Mode GaN Powered Device is manufactured in... 15 | THIRD-GENERATION SEMICONDUCTOR Passivation Layer Metal 3 Metal 3 Via Via Metal 2 Metal 2 Via Via Source Metal Gate Metal Drain Metal pGaN Solder Ball Solder Ball Heteroepitaxy is a process whereby one type of crystal structure is grown on top of a different crystal because GaN substrates are not readily available and are very expensive​ . Growing the heteroepitaxy A wafer is a thin slice of semiconductor material used in the fabrication of integrated circuits. The wafer serves as the substrate for microelectronic devices. Source, drain and gate are built on top of the wafer​ . Wafer Fabrication The preferred method for making electrical connections is by soldering directly to the contacts. Solder bumps are the small spheres of solder balls that are bonded to contact areas or pads of semiconductor devices. Making electrical connections AlGaN Barrier GaN AlGaN Buffer Layer AlN Seed Layer Substrate There are 4 main factors affecting the selection: lattice mismatch, relative thermal expansion, thermal conductivity and relative cost. The common choices are Si, SiC and Sapphire. Selecting the substrate material 1 2 4 Source: EPC Corporation Ga Intro 3
During the manufacturing process, the technical challenge lies in the ability to form Ohmic Contact and Schottky Contact at the same time 16 | THIRD-GENERATION SEMICONDUCTOR OHMIC CONTACT SCHOTTKY CONTACT The key technical challenge is to achieve low drain and source resistance and linearity between the applied voltage and drain current. The key challenge is to control the etching process to achieve high threshold voltage, high drain current, low parasitic capacitance and low parasitic resistance. S G D GaN Substrate Ohmic Contact Ohmic Contact Schottky Contact *S, G, D refers to source, gate and drain respectively Source: IOP Conference, Gallium Nitride Power Devices Ga Intro
Manufacturing of GaN powered devices is often limited by substrate compatibility and high production cost 17 | THIRD-GENERATION SEMICONDUCTOR Source: EPC Corporation Currently, Si and Sapphire substrates are most commonly used due to their low production cost. However, the industry is shifting towards SiC and GaN based substrates due to their enhanced lattice match. S G D GaN Si Substrate S G D GaN Sapphire Substrate S G D GaN SiC Substrate S D GaN GaN Substrate Low Cost Poor Lattice Match Low Cost Poor Lattice Match High Cost Moderate Lattice Match Highest Cost Good Lattice Match Ga Intro G
Ga There are ongoing developments in GaN powered devices to increase manufacturing efficiency and lower production costs 18 | THIRD-GENERATION SEMICONDUCTOR Metal Insulating Semiconductors (MIS) SC gates are adopted to more effectively reduce gate current leakage. ​ Schottky Contact (SC) For the production of e-mode devices, the p-GaN gate HEMT showed a good balance among performance, manufacturability and reliability, which has resulted in the first commercialization of single-chip e- mode GaN. ​ P-GaN Vertical GaN is capable of operating at high breakdown voltage which enables vertical GaN to power the most demanding applications. Vertical GaN Development GaN Powered Devices Regrowth method used to further reduce OC resistance and to obtain a better surface morphology and interface. Using ion implantation and laser annealing technology to form non-alloy OC on GaN. ​ ​ Ohmic Contact (OC) Source: MDPI, Power Electronics News, AIP Conference Intro Anode Si Si n-GAN u-GAN p-GAN Cathode S G D GaN Substrate
A deep dive into SiC 3 Today, the Silicon Carbide (SiC) semiconductor is becoming the front runner in power electronics power devices. It is a growing alternative to silicon-based electronics components, especially in Wide Bandgap applications. The material offers benefits such as greater power efficiency, smaller in size, lighter in weight and lower the overall cost of the systems.​ 19 | THIRD-GENERATION SEMICONDUCTOR
The 5 key advantages of SiC includes... High breakdown voltage of more than 600V 2x higher temperature resistance High thermal conductivity of more than 4.9W/cmK SiC module is 1/7 the size of Si SiC is capable of reducing power losses of up to 90% as compared to Si - 1 3 5 2 4 Source: Charged EVs 20 | THIRD-GENERATION SEMICONDUCTOR Si Intro
SiC is mainly used for power devices such as... A diode is a semiconductor device that essentially acts as a one-way switch for current. It allows current to flow easily in one direction, but severely restricts current from flowing in the opposite direction. Diodes Transistors APPLICATIONS Rectifiers Clipper Circuit A transistor is a miniature semiconductor that regulates or controls current or voltage flow in addition to amplifying and generating these electrical signals and acting as a switch/gate for them. APPLICATIONS Microphones Amplifier Circuit Reverse Current Protection Circuit Oscillator Circuit Source: Tech Target, System Plus Consulting Intro 21 | THIRD-GENERATION SEMICONDUCTOR Si Intro
. .. ... . . . . . Low Energy Loss High Efficiency Low Heat Low Cooling Cost Low EMI n- type layer n- type layer Si diodes are increasingly being replaced by SiC diodes Currently, the most abundant material used in diodes are Si but the industry is transitioning to SiC diodes. Si DIODE SiC DIODE . . . . . . Anode Cathode Anode Cathode Electron n+ type substrate n+ type substrate Low Energy Loss High Efficiency Low Heat Low Cooling Cost Low EMI Electron Source: ST Life Augmented, Tech Web, Goldman Sachs 22 | THIRD-GENERATION SEMICONDUCTOR Si Intro
Si transistors are rapidly being replaced by SiC MOSFET Si MOSFET and Si IGBT are currently the most abundant transistors used but the adoption of SiC MOSFET is rapidly gaining traction High SiC MOSFET Breakdown Field Strength Switching Frequency PHYSICAL PROPERTY Si MOSFET & Si IGBT Temperature Resistance Switching Losses High Low Low Low High TAKEAWAYS High Low SiC has 10x the critical breakdown field strength as Si, allowing it to withstand much greater voltage. High switching frequency allows the use of smaller external inductor and capacitor values which leads to size reduction. Higher temperature resistance allows for usage of simplified cooling measures and reduces costs. Low switching losses allows for lesser energy to be lost leading to greater energy efficiency. Source: Wolfspeed, IEE Explore, TechWeb 23 | THIRD-GENERATION SEMICONDUCTOR Si Intro - refer to the preferred characteristics of SiC Transistors *Blue and bold text
We see the industry moving towards SiC MOSFET with two main device design technologies - Planar and Trench​ Players Planar (DMOS) Trench (UMOS) Players The trench design promotes the reduction of ON-Resistance, switching loss, reduction of device size. Gate RJFET SiC n-epi Rch Channel Trench Rch RJFET The planar design is known to have a less complex manufacturing process.​ Source: Fuji Electric, IMicroNews 24 | THIRD-GENERATION SEMICONDUCTOR Si Intro
However, specific production challenges prevent SiC from reaching maximum cost efficiency and performance Silicon Carbide (SiC) Production Challenges SiC ingots are generated 750x slower than Si ingots. Slow Production Rate SiC has approximately 250 isomers but only one formula (4H-SiC) can be used to make power semiconductors under specific conditions, resulting in higher production cost. Multiple Isomers SiC ingots are in a small and slim pie shape. This makes SiC ingots extremely difficult to cut into substrates. Smaller Size SiC substrates are more prone to flaws when being produced. In addition, SiC substrates are 7-8x more expensive and take a long time to form. High Substrate Defect Density Extremely high pressure and temperature between 1600°C and 2500°C is required to produce a single SiC ingot High Temperature and Pressure During the production process of SiC, an array of polytypes may be formed. Each polytype has different physical properties, thus making the production of SiC devices challenging. Array of Polytypes Source: Harbin Normal University, Power Electronics News, GaN Systems 25 | THIRD-GENERATION SEMICONDUCTOR Si Intro
New innovations are arising to make SiC production more cost efficient and scalable Boosting production capacity Increasing wafer size Early detection tools Cree plans to invest USD 1B in attempting to increase the capacity of their semiconductors Fabrication Plants (FAB) to produce more 150mm SiC Wafers. Efficient Power Conversion Corporation (EPC) introduced the first enhancement mode Gallium Nitride on silicon (eGaN) field effect transistor (FET). Lasertec will continue to pursue the development and advancement of defect inspection technologies to facilitate the further enhancement of power device quality and productivity.​ 1 2 3 Source: Lasertec, SemiEngineering 26 | THIRD-GENERATION SEMICONDUCTOR Si Intro
In summary, GaN is... GALLIUM NITRIDE Gallium Nitride (GaN) is a binary III/V direct bandgap semiconductor that is well-suited for high-power transistors capable of operating at high temperatures. ​ GALLIUM NITRIDE APPLICATIONS GaN is ideal for Switching Mode Power Supply (SMPS) and Radio Frequency (RF) applications. Possible applications that require SMPS and RF include Radar, Power Devices and EV charging 1 2 FUTURE DEVELOPMENTS R&D is mainly focused on vertical GaN development which is capable of operating at high breakdown voltage and has the potential to power the most demanding applications, such as power supplies for data center servers and EV drivetrains. 3 Vertical GaN Development Summar 27 | THIRD-GENERATION SEMICONDUCTOR Anode Si Si n-GAN u-GAN p-GAN Cathode
In summary, SiC is... Silicon Carbide (SiC) is a growing alternative to silicon-based electronics components, especially in wide bandgap applications. The material offers greater power efficiency, smaller in size, lighter in weight and lowers the overall cost of systems. SILICON CARBIDE APPLICATIONS SiC powered devices have a high use case in diodes and transistors. Diodes are used in many different types of circuits and transistors are used in amplifiers or switches. 1 2 FUTURE DEVELOPMENTS R&D currently focuses on improving SiC wafer size from 6 inch to 8 inch to reduce production costs, as well as developments in equipment used to identify defects in wafers to improve efficiency of SiC based power devices.​ 3 SILICON CARBIDE Possible applications for SiC powered devices include audio amplifiers and power supplies Summar 28 | THIRD-GENERATION SEMICONDUCTOR
Disclaime 29 | THIRD-GENERATION SEMICONDUCTOR FOR MORE VERTEX PERSPECTIVES, VISIT WWW.VERTEXHOLDINGS.COM © 2022, Vertex Holdings. No part of this material may be reproduced in any form, or referred to in any other publication, without the express written permission of Vertex Holdings (“VH”). Companies that VH believes are capitalizing on disruptive innovation and developing technologies to displace older technologies or create new markets may not in fact do so and/or may face political or legal attacks from competitors, industry groups, or local and national governments. VH aims to educate investors and to size the potential opportunity of Disruptive Innovation, noting that risks and uncertainties may impact our projections and research models. Investors should use the content presented for informational purposes only, and be aware of market risk, disruptive innovation risk, regulatory risk, and risks related to third- generation semiconductors. The content of this presentation is for informational purposes only and is subject to change without notice. This presentation does not constitute, either explicitly or implicitly, any provision of services or products by VH are encouraged to consult counsel and/or other investment professionals as to whether a particular service is suitable for their investment needs. All statements made regarding companies are strictly beliefs and points of view held by VH and are not endorsements by VH of any company or recommendations by VH to buy, sell or hold any security. Historical results are not indications of future results. Certain statements contained in this presentation may be statements of future expectations and other forward-looking statements that are based on VH's current views and assumptions and involve known and unknown risks and uncertainties that could cause actual results, performance or events to differ materially from those expressed or implied in such statements. VH assumes no obligation to update any forward-looking information contained in this presentation. Certain information was obtained from sources that VH believes to be reliable; however VH does not guarantee the accuracy or completeness of any information obtained from any third party. VH and its related persons/entities may (but do not necessarily) have financial interests in securities or issuers that are discussed. Vertex Holdings 250 North Bridge Road #11-01, Raffles City Tower Singapore 179101 communications@vertexholdings.com
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Third-Generation Semiconductor: The Next Wave?

  • 1.
    Third-Generation Third-Generation Semiconductor Semiconductor For more info,drop us an email at communications@vertexholdings.com
  • 2.
    Agend 2 | THIRD-GENERATIONSEMICONDUCTOR An introduction to 3rd Generation Semiconductor 1 Deep Dive into GaN 2 Deep Dive into SiC 3 Summary 4
  • 3.
    Semiconductors are essentialenablers that power many of the cutting- edge digital devices we use today. The global semiconductor industry has evolved over the years and is set to continue its robust growth into the next decade due to emerging technologies and applications in areas such as Electric Vehicles (EVs), 5G and the Internet of Things, renewable energy, photovoltaics (solar) and many other applications. Coupled with R&D investments and the rising demand for cutting-edge electronic products, we are seeing an increase in the number of new applications, and we believe growth is here to stay. Forewor 3 | THIRD-GENERATION SEMICONDUCTOR Vertex Perspectives is a research report for informational purposes only. This is not a recommendation in relation to any named particular companies and no warranty or guarantee is provided. Any references to particular companies are for illustrative purposes only. There is no assurance that the Adviser will make any investments with the same or similar characteristics as any investment presented. The reader should not assume that an investment identified was or will be profitable. Past Performance is not indicative of future performance, future returns are not guaranteed.
  • 4.
    The evolving semiconductor scene 1 Overthe years, semiconductors have evolved from the 1st Generation to the current 3rd Generation. Each generation presents different set of benefits and challenges. In this section, we look at the three generations of semiconductors, specifically 3rd Generation semiconductors also known as the Wide Bandgap Semiconductors. 4 | THIRD-GENERATION SEMICONDUCTOR
  • 5.
    Intr 1 The firstgeneration of semiconductor materials made use of Silicon and Germanium. However, their properties limited their use in optoelectronic, high-frequency and high power devices. 1st Generation Gallium Arsenide (GaAs) and Indium Phosphide (InP) was mainly used but they were scarce, expensive and toxic thus limiting their usage. ​ 2nd Generation 3 They were made using Gallium Nitride (GaN) and Silicon Carbide (SiC). Suitable for making high power, high frequency, high temperature and radiation resistant devices. 3rd Generation Source: E3S, Department of Electronic and Electrical Engineering Semiconductors have evolved from the 1st Generation to the 3rd Generation 2 5 | THIRD-GENERATION SEMICONDUCTOR Intro
  • 6.
    & Allows for highervoltage & more compact High Breakdown Voltage 3rd Generation semiconductors offer 5 key advantages Allows for faster heat transfer ​ Higher Thermal Conductivity Allows higher power efficiency and higher frequency​ Higher Bandgap Higher current and higher frequency Higher Saturation Velocity Higher current (higher power) ​ Higher Melting Point SiC & GaN Source: Harbin Normal University, Power Electronics News, GaN Systems Use cases include all use cases mentioned 6 | THIRD-GENERATION SEMICONDUCTOR Use cases include high temperature power electronics Use cases include all Radio Frequency (RF) communications ​ Use cases include high power electronics Use cases include high temperature power electronics Intr Intro
  • 7.
    GaN and SiCare better than conventional Si semiconductors 7 | THIRD-GENERATION SEMICONDUCTOR BREAKDOWN ELECTRIC FIELD STRENGTH Sillicon Carbide (SiC) SiC has a 10x higher breakdown electric field strength than Si. Gallium Nitride (GaN) WIDE BAND GAP SiC has 3x the band gap thus enabling higher power efficiencies and higher voltage use cases. High-speed Trains GaN is able to conduct electrons more than 1000x more efficiently.​ EFFICIENT ELECTRICAL CONDUCTIVITY LOW COST GaN semiconductors can be manufactured on Si substrate with comparable cost to normal Si semiconductor. APPLICATIONS Radio Frequency Power Adaptors APPLICATIONS Source: GaN Systems, EPC, Rohm Semiconductors, Mouser, Woodhead Publishing, Passive Components Intr Intro EV Charging
  • 8.
    Physical property differencesallow SiC and GaN to be used in specialised applications 8 | THIRD-GENERATION SEMICONDUCTOR High SILICON CARBIDE (SiC) Breakdown Field Strength Electron Mobility PHYSICAL PROPERTY GALLIUM NITRIDE (GaN) Thermal conductivity ​ ​ Melting point ​ ​ 1.3 W/cmK​ ​ Low Higher 5 W/cmK​ ​ High USAGES 2000 ​ ​ cm /Vs​ ​ 2 650 ​ ​ cm /Vs​ ​ 2 SiC is still better suited for higher voltage devices while GaN is used for mid-low voltage use cases. GaN's electrons are faster moving than SiCs making GaN more suitable for higher-frequency applications. Higher thermal conductivity makes SiC highly advantageous in high-power, high-temperature applications. Higher melting point makes SiC suitable for high-temperature applications. Source: Power Electronics News, E3S - refer to the stronger characteristics among the two 3rd Generation Semiconductor materials Intro Intr Intro *Blue and bold text
  • 9.
    GaN and SiCare used in specific applications differentiated by voltage tier 9 | THIRD-GENERATION SEMICONDUCTOR Source: Yole Existing Initiatives LOW VOLTAGE HIGH VOLTAGE MEDIUM VOLTAGE <200V 900V 600V 1.2kV 3.3kV 6.5kV GaN SiC GaN + SiC Power Adaptors Photovoltic EV/ HEV UPS Motor Control High-speed Trains Windmill Smart Powergrid Intr Intro Radio Frequency
  • 10.
    A deep diveinto GaN 2 Gallium nitride (GaN) is creating an innovative shift throughout the power electronics world. It is a binary III/V direct bandgap semiconductor that is well-suited for high-power transistors capable of operating at high temperatures. GaN is used in semiconductor power devices, RF components, lasers, photonics and in the future, we may see GaN in sensor technology. 10 | THIRD-GENERATION SEMICONDUCTOR
  • 11.
    The development ofGallium Nitride (GaN) has came a long way since 2004 11 | THIRD-GENERATION SEMICONDUCTOR High Electron Mobility Transistors (HEMTs) Enhancement-mode GaN (eGaN) First GaN Power Integrated Ciricuit (IC) Navitas started mass production of GaN powered ICs. Its GaN powered ICs enable up to 3x faster charging in half the size and weight of the silicon-based power electronics. Mass Production of GaN Powered IC HEMT (High Electron Mobility Transistor) gallium nitride (GaN) transistors first appearance was around 2004 with depletion-mode RF transistors made by Eudyna Corporation in Japan. Efficient Power Conversion Corporation (EPC) introduced the first enhancement mode gallium nitride on silicon (eGaN) field effect transistor (FET). Navitas demonstrated its first GaN Power ICs (high-voltage and half-bridge powered IC) using its proprietary AlGaN monolithically-integrated 650V platform. Source: Navitas, EE Power, In Tech Open, GaN Systems, EPC Co, Fibre Optics Online 2004 SEP 2009 JUN 2015 NOV 2019 MAR Ga Intro
  • 12.
    To date, theseare the key players in the GaN device supply chain focusing on manufacturing and design 12 | THIRD-GENERATION SEMICONDUCTOR Cell components PRODUCTS DESIGN FABS Low Voltage Devices: 100-200V High Voltage Devices: 600-650V Players who propose the design but do not have Fabs to manufacture semiconductors. ​ Fabs (Semiconductor Fabrication Plants) manufactures semiconductors. Adapted from Yole Intro Ga Intro
  • 13.
    Ga The twomajor applications of GaN are Radio Frequency (RF) and Switching Mode Power Supply (SMPS) 13 | THIRD-GENERATION SEMICONDUCTOR Source: Sunpower UK, EE Times Asia, Mouser & Radio frequency (RF) waves are a form of electromagnetic radiation with identified radio frequencies that range from 3kHz to 300 GHz. Typically for RF applications, D- mode GaN is utilised. Radio Frequency (RF) GaN High power density, breakdown voltage, operating frequency, temperature operation and lower energy losses ​ Properties Applications RF Communications Radar System 5G Base Stations SMPS switch mode power supply is a power converter that uses a switching regulator to convert power efficiently. Switching Mode Power Supply (SMPS)​ ​ High power efficiency and more compact Properties Applications DC/DC Converter Intro AC/DC Converter
  • 14.
    There are twotypes of GaN Field Effect Transistors (FETs): D-Mode and E-Mode 14 | THIRD-GENERATION SEMICONDUCTOR AlGaN S G D GaN Substrate 2D Electron Gas Aluminum Nitride Bottom Layer Depletion Mode (D-Mode) Enhancement Mode (E-Mode) The depletion mode transistor is normally on and is turned off with a negative voltage relative to the drain and source electrodes. ​ DIFFERENCES: The enhancement mode transistor is normally off and is turned on by positive voltage applied to the gate. ​ In the basic GaN transistor structure, there are Gate, Source and Drain electrodes. Source: EPC Corporation Intro Ga Intro S G D GaN Substrate AlGaN Field Plate Protective Di- Electric 2D Electron Gas Aluminum Nitride Bottom Layer
  • 15.
    A typical e-ModeGaN Powered Device is manufactured in... 15 | THIRD-GENERATION SEMICONDUCTOR Passivation Layer Metal 3 Metal 3 Via Via Metal 2 Metal 2 Via Via Source Metal Gate Metal Drain Metal pGaN Solder Ball Solder Ball Heteroepitaxy is a process whereby one type of crystal structure is grown on top of a different crystal because GaN substrates are not readily available and are very expensive​ . Growing the heteroepitaxy A wafer is a thin slice of semiconductor material used in the fabrication of integrated circuits. The wafer serves as the substrate for microelectronic devices. Source, drain and gate are built on top of the wafer​ . Wafer Fabrication The preferred method for making electrical connections is by soldering directly to the contacts. Solder bumps are the small spheres of solder balls that are bonded to contact areas or pads of semiconductor devices. Making electrical connections AlGaN Barrier GaN AlGaN Buffer Layer AlN Seed Layer Substrate There are 4 main factors affecting the selection: lattice mismatch, relative thermal expansion, thermal conductivity and relative cost. The common choices are Si, SiC and Sapphire. Selecting the substrate material 1 2 4 Source: EPC Corporation Ga Intro 3
  • 16.
    During the manufacturingprocess, the technical challenge lies in the ability to form Ohmic Contact and Schottky Contact at the same time 16 | THIRD-GENERATION SEMICONDUCTOR OHMIC CONTACT SCHOTTKY CONTACT The key technical challenge is to achieve low drain and source resistance and linearity between the applied voltage and drain current. The key challenge is to control the etching process to achieve high threshold voltage, high drain current, low parasitic capacitance and low parasitic resistance. S G D GaN Substrate Ohmic Contact Ohmic Contact Schottky Contact *S, G, D refers to source, gate and drain respectively Source: IOP Conference, Gallium Nitride Power Devices Ga Intro
  • 17.
    Manufacturing of GaNpowered devices is often limited by substrate compatibility and high production cost 17 | THIRD-GENERATION SEMICONDUCTOR Source: EPC Corporation Currently, Si and Sapphire substrates are most commonly used due to their low production cost. However, the industry is shifting towards SiC and GaN based substrates due to their enhanced lattice match. S G D GaN Si Substrate S G D GaN Sapphire Substrate S G D GaN SiC Substrate S D GaN GaN Substrate Low Cost Poor Lattice Match Low Cost Poor Lattice Match High Cost Moderate Lattice Match Highest Cost Good Lattice Match Ga Intro G
  • 18.
    Ga There areongoing developments in GaN powered devices to increase manufacturing efficiency and lower production costs 18 | THIRD-GENERATION SEMICONDUCTOR Metal Insulating Semiconductors (MIS) SC gates are adopted to more effectively reduce gate current leakage. ​ Schottky Contact (SC) For the production of e-mode devices, the p-GaN gate HEMT showed a good balance among performance, manufacturability and reliability, which has resulted in the first commercialization of single-chip e- mode GaN. ​ P-GaN Vertical GaN is capable of operating at high breakdown voltage which enables vertical GaN to power the most demanding applications. Vertical GaN Development GaN Powered Devices Regrowth method used to further reduce OC resistance and to obtain a better surface morphology and interface. Using ion implantation and laser annealing technology to form non-alloy OC on GaN. ​ ​ Ohmic Contact (OC) Source: MDPI, Power Electronics News, AIP Conference Intro Anode Si Si n-GAN u-GAN p-GAN Cathode S G D GaN Substrate
  • 19.
    A deep diveinto SiC 3 Today, the Silicon Carbide (SiC) semiconductor is becoming the front runner in power electronics power devices. It is a growing alternative to silicon-based electronics components, especially in Wide Bandgap applications. The material offers benefits such as greater power efficiency, smaller in size, lighter in weight and lower the overall cost of the systems.​ 19 | THIRD-GENERATION SEMICONDUCTOR
  • 20.
    The 5 keyadvantages of SiC includes... High breakdown voltage of more than 600V 2x higher temperature resistance High thermal conductivity of more than 4.9W/cmK SiC module is 1/7 the size of Si SiC is capable of reducing power losses of up to 90% as compared to Si - 1 3 5 2 4 Source: Charged EVs 20 | THIRD-GENERATION SEMICONDUCTOR Si Intro
  • 21.
    SiC is mainlyused for power devices such as... A diode is a semiconductor device that essentially acts as a one-way switch for current. It allows current to flow easily in one direction, but severely restricts current from flowing in the opposite direction. Diodes Transistors APPLICATIONS Rectifiers Clipper Circuit A transistor is a miniature semiconductor that regulates or controls current or voltage flow in addition to amplifying and generating these electrical signals and acting as a switch/gate for them. APPLICATIONS Microphones Amplifier Circuit Reverse Current Protection Circuit Oscillator Circuit Source: Tech Target, System Plus Consulting Intro 21 | THIRD-GENERATION SEMICONDUCTOR Si Intro
  • 22.
    . .. ... . .. . . Low Energy Loss High Efficiency Low Heat Low Cooling Cost Low EMI n- type layer n- type layer Si diodes are increasingly being replaced by SiC diodes Currently, the most abundant material used in diodes are Si but the industry is transitioning to SiC diodes. Si DIODE SiC DIODE . . . . . . Anode Cathode Anode Cathode Electron n+ type substrate n+ type substrate Low Energy Loss High Efficiency Low Heat Low Cooling Cost Low EMI Electron Source: ST Life Augmented, Tech Web, Goldman Sachs 22 | THIRD-GENERATION SEMICONDUCTOR Si Intro
  • 23.
    Si transistors arerapidly being replaced by SiC MOSFET Si MOSFET and Si IGBT are currently the most abundant transistors used but the adoption of SiC MOSFET is rapidly gaining traction High SiC MOSFET Breakdown Field Strength Switching Frequency PHYSICAL PROPERTY Si MOSFET & Si IGBT Temperature Resistance Switching Losses High Low Low Low High TAKEAWAYS High Low SiC has 10x the critical breakdown field strength as Si, allowing it to withstand much greater voltage. High switching frequency allows the use of smaller external inductor and capacitor values which leads to size reduction. Higher temperature resistance allows for usage of simplified cooling measures and reduces costs. Low switching losses allows for lesser energy to be lost leading to greater energy efficiency. Source: Wolfspeed, IEE Explore, TechWeb 23 | THIRD-GENERATION SEMICONDUCTOR Si Intro - refer to the preferred characteristics of SiC Transistors *Blue and bold text
  • 24.
    We see theindustry moving towards SiC MOSFET with two main device design technologies - Planar and Trench​ Players Planar (DMOS) Trench (UMOS) Players The trench design promotes the reduction of ON-Resistance, switching loss, reduction of device size. Gate RJFET SiC n-epi Rch Channel Trench Rch RJFET The planar design is known to have a less complex manufacturing process.​ Source: Fuji Electric, IMicroNews 24 | THIRD-GENERATION SEMICONDUCTOR Si Intro
  • 25.
    However, specific productionchallenges prevent SiC from reaching maximum cost efficiency and performance Silicon Carbide (SiC) Production Challenges SiC ingots are generated 750x slower than Si ingots. Slow Production Rate SiC has approximately 250 isomers but only one formula (4H-SiC) can be used to make power semiconductors under specific conditions, resulting in higher production cost. Multiple Isomers SiC ingots are in a small and slim pie shape. This makes SiC ingots extremely difficult to cut into substrates. Smaller Size SiC substrates are more prone to flaws when being produced. In addition, SiC substrates are 7-8x more expensive and take a long time to form. High Substrate Defect Density Extremely high pressure and temperature between 1600°C and 2500°C is required to produce a single SiC ingot High Temperature and Pressure During the production process of SiC, an array of polytypes may be formed. Each polytype has different physical properties, thus making the production of SiC devices challenging. Array of Polytypes Source: Harbin Normal University, Power Electronics News, GaN Systems 25 | THIRD-GENERATION SEMICONDUCTOR Si Intro
  • 26.
    New innovations arearising to make SiC production more cost efficient and scalable Boosting production capacity Increasing wafer size Early detection tools Cree plans to invest USD 1B in attempting to increase the capacity of their semiconductors Fabrication Plants (FAB) to produce more 150mm SiC Wafers. Efficient Power Conversion Corporation (EPC) introduced the first enhancement mode Gallium Nitride on silicon (eGaN) field effect transistor (FET). Lasertec will continue to pursue the development and advancement of defect inspection technologies to facilitate the further enhancement of power device quality and productivity.​ 1 2 3 Source: Lasertec, SemiEngineering 26 | THIRD-GENERATION SEMICONDUCTOR Si Intro
  • 27.
    In summary, GaNis... GALLIUM NITRIDE Gallium Nitride (GaN) is a binary III/V direct bandgap semiconductor that is well-suited for high-power transistors capable of operating at high temperatures. ​ GALLIUM NITRIDE APPLICATIONS GaN is ideal for Switching Mode Power Supply (SMPS) and Radio Frequency (RF) applications. Possible applications that require SMPS and RF include Radar, Power Devices and EV charging 1 2 FUTURE DEVELOPMENTS R&D is mainly focused on vertical GaN development which is capable of operating at high breakdown voltage and has the potential to power the most demanding applications, such as power supplies for data center servers and EV drivetrains. 3 Vertical GaN Development Summar 27 | THIRD-GENERATION SEMICONDUCTOR Anode Si Si n-GAN u-GAN p-GAN Cathode
  • 28.
    In summary, SiCis... Silicon Carbide (SiC) is a growing alternative to silicon-based electronics components, especially in wide bandgap applications. The material offers greater power efficiency, smaller in size, lighter in weight and lowers the overall cost of systems. SILICON CARBIDE APPLICATIONS SiC powered devices have a high use case in diodes and transistors. Diodes are used in many different types of circuits and transistors are used in amplifiers or switches. 1 2 FUTURE DEVELOPMENTS R&D currently focuses on improving SiC wafer size from 6 inch to 8 inch to reduce production costs, as well as developments in equipment used to identify defects in wafers to improve efficiency of SiC based power devices.​ 3 SILICON CARBIDE Possible applications for SiC powered devices include audio amplifiers and power supplies Summar 28 | THIRD-GENERATION SEMICONDUCTOR
  • 29.
    Disclaime 29 | THIRD-GENERATIONSEMICONDUCTOR FOR MORE VERTEX PERSPECTIVES, VISIT WWW.VERTEXHOLDINGS.COM © 2022, Vertex Holdings. No part of this material may be reproduced in any form, or referred to in any other publication, without the express written permission of Vertex Holdings (“VH”). Companies that VH believes are capitalizing on disruptive innovation and developing technologies to displace older technologies or create new markets may not in fact do so and/or may face political or legal attacks from competitors, industry groups, or local and national governments. VH aims to educate investors and to size the potential opportunity of Disruptive Innovation, noting that risks and uncertainties may impact our projections and research models. Investors should use the content presented for informational purposes only, and be aware of market risk, disruptive innovation risk, regulatory risk, and risks related to third- generation semiconductors. The content of this presentation is for informational purposes only and is subject to change without notice. This presentation does not constitute, either explicitly or implicitly, any provision of services or products by VH are encouraged to consult counsel and/or other investment professionals as to whether a particular service is suitable for their investment needs. All statements made regarding companies are strictly beliefs and points of view held by VH and are not endorsements by VH of any company or recommendations by VH to buy, sell or hold any security. Historical results are not indications of future results. Certain statements contained in this presentation may be statements of future expectations and other forward-looking statements that are based on VH's current views and assumptions and involve known and unknown risks and uncertainties that could cause actual results, performance or events to differ materially from those expressed or implied in such statements. VH assumes no obligation to update any forward-looking information contained in this presentation. Certain information was obtained from sources that VH believes to be reliable; however VH does not guarantee the accuracy or completeness of any information obtained from any third party. VH and its related persons/entities may (but do not necessarily) have financial interests in securities or issuers that are discussed. Vertex Holdings 250 North Bridge Road #11-01, Raffles City Tower Singapore 179101 communications@vertexholdings.com
  • 30.
    Connect with us Connectwith us For queries, contact us at communications@vertexholdings.com Follow us on Social Media