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REVIEW OF POWER SUPPLY
POWER CONTROL DEVICES
 SILICON CONTROLLED RECTIFIER (SCR)
P
P
N
N
Gate
(G)
(K) Cathode
(A) Anode
Structure
G
K
A
Schematic symbol
•The silicon controlled
rectifier (SCR) is a four layer
PN bipolar semiconductor
device with three terminal
•It belongs to the thyristor
family of electronic devices,
which operates on the
principle of current
conduction when the
breakover voltage is
reached.
 OPERATION OF AN SCR:
P
P
N
N
P
P
N
N
P
P
N
N
2.2k 2.2k 2.2k
RA RA RA
100
RL
100
RL
100
RL
B B B
A A
A
10K
RG
10K
RG
10K
RG
VAA = 12V VAA = 12V
VAA = 12V
J1 J1
J1
J2
J3
J2
J3 J3
J2
G G
G
S1 S1
S1
(1)Off condition (2) Triggering on (3) On condition
without triggering
DIAC
The DIAC if a three- layer (two
junction) PN device
It official name is “bi-directional
diode thyristor”, which means
that it is bilateral or will conduct
in both directions
The DIAC operates similar to
two zener diodes place face to
face or back to back in series.
P
P
N
Structure
Schematic
Symbol
Equivalent
Circuit
TRIAC
Terminal 2 (T2)
Terminal 1 (T1)
P
P
N
N N
N
Gate
(G)
T2
T1
G
Structure Schematic symbol Equivalent circuit
T2
T1
G
 TRIAC OPERATION
P
P
N
N N
N
RG
S1
+V
+V
RL
P
P
N
N N
N
RG
S1
-V
+V
RL
0V 0V
Positive terminal voltage
with positive gate
Positive terminal voltage
with negative gate
TRIAC OPERATION
P
P
N
N N
N
RG
S1
+V
- V
RL
P
P
N
N N
N
RG
S1
-V
-V
RL
0V 0V
Negative terminal voltage
with positive gate
Negative terminal voltage
with negative gate
 UNIJUNCTION TRANSISTOR
it is a device used in triggering oscillator circuits.
INTRINSIC STANDOFF RATIO – the ratio of rB1 to rBB and also used to
determine the firing point (the point when the UJT turns on).
η = rB1 / (rB1 + rB2) = rB1 / rBB
Base 2 (B2)
P material
Emitter
E
N
material
Base 1 (B1)
rB2
rB1
rBB
E
B1
B2
Structure Schematic symbol
 CURRENT-VOLTAGE CHARACTERISTICS OF A UJT
IE (mA)
4 8
4
8
V
E
=
(V)
Negative
resistance
region
Saturation
region
Cut-off
region
Vp
peak
Vp = Vη + VD
Emitter characteristic curve
Valley
VV
0

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THYRISTOR.ppt

  • 1.
  • 2. REVIEW OF POWER SUPPLY POWER CONTROL DEVICES
  • 3.  SILICON CONTROLLED RECTIFIER (SCR) P P N N Gate (G) (K) Cathode (A) Anode Structure G K A Schematic symbol •The silicon controlled rectifier (SCR) is a four layer PN bipolar semiconductor device with three terminal •It belongs to the thyristor family of electronic devices, which operates on the principle of current conduction when the breakover voltage is reached.
  • 4.  OPERATION OF AN SCR: P P N N P P N N P P N N 2.2k 2.2k 2.2k RA RA RA 100 RL 100 RL 100 RL B B B A A A 10K RG 10K RG 10K RG VAA = 12V VAA = 12V VAA = 12V J1 J1 J1 J2 J3 J2 J3 J3 J2 G G G S1 S1 S1 (1)Off condition (2) Triggering on (3) On condition without triggering
  • 5. DIAC The DIAC if a three- layer (two junction) PN device It official name is “bi-directional diode thyristor”, which means that it is bilateral or will conduct in both directions The DIAC operates similar to two zener diodes place face to face or back to back in series. P P N Structure Schematic Symbol Equivalent Circuit
  • 6. TRIAC Terminal 2 (T2) Terminal 1 (T1) P P N N N N Gate (G) T2 T1 G Structure Schematic symbol Equivalent circuit T2 T1 G
  • 7.  TRIAC OPERATION P P N N N N RG S1 +V +V RL P P N N N N RG S1 -V +V RL 0V 0V Positive terminal voltage with positive gate Positive terminal voltage with negative gate
  • 8. TRIAC OPERATION P P N N N N RG S1 +V - V RL P P N N N N RG S1 -V -V RL 0V 0V Negative terminal voltage with positive gate Negative terminal voltage with negative gate
  • 9.  UNIJUNCTION TRANSISTOR it is a device used in triggering oscillator circuits. INTRINSIC STANDOFF RATIO – the ratio of rB1 to rBB and also used to determine the firing point (the point when the UJT turns on). η = rB1 / (rB1 + rB2) = rB1 / rBB Base 2 (B2) P material Emitter E N material Base 1 (B1) rB2 rB1 rBB E B1 B2 Structure Schematic symbol
  • 10.  CURRENT-VOLTAGE CHARACTERISTICS OF A UJT IE (mA) 4 8 4 8 V E = (V) Negative resistance region Saturation region Cut-off region Vp peak Vp = Vη + VD Emitter characteristic curve Valley VV 0