Microfluidic device

1. Printed Electro-wetting Devices
embedded
nanosensors
D. Mascolo

2. 2
May 2009
Printed Electro-wetting devices
• The combination of Printed Technology and silicon functionalization
allows the production of functionalized printed devices working in
Electrowetting mode
• Already proved:
– Flat Silicon functionalization exhibits a stable hydrophobic behavior.
– When a Si-C linkage is established the monolayer quality has enhanced electrical
properties with breakdown voltage even higher than Silicon Oxide
– Proprietary mold production done in EBL of test wetting devices
– Printed electrowetting devices
– Next steps to be proved:
• Functionalization of printed electrowetting devices
• Sub-picoliter droplet movement

3. 3
May 2009
Modulation of the wetting behavior via electric field
C.A ~ 119 C.A ~ 72
Perfluoro-silanization
V=0 V=25 V

4. 4
May 2009
Printed Nanoscale devices
Mold with
nanoscale devices
Nano Device
bafrication
Nano -ImprintingEBL definition
RIE
Antisticking
Mold definition
CAD

5. 5
May 2009
Printed micro-fluidic devices 1/4
CAD
Printed Micro-fluidic Devices
200nm
+p Si
SiO2
0.2x0.2 mm2

6. 6
May 2009
Printed Electro-wetting devices 2/4
+p Si
SiO2
20
µm
…to be functionalized to achieve a suitable
degree of hydrophobic layer between the silicon
electrodes
7µm
Pad j
Droplet Movement
Pad j+1
200nm

7. 7
May 2009
Printed Electro-wetting devices 3/4
+p Si
SiO2
2 µm
Ground Pad

8. 8
May 2009
Printed Electro-wetting devices 4/4
5 µm
Ground
Drop movement
Zone where to integrate
Nano-scale printed sensors
110 nm

9. 9
May 2009
Printed Electro-wetting devices embedding nano
sensors
5 µm
Ground Electrodes
Dropmovement
Double functionalization required
Printed Nano-sensors: Bio-functionalization
Prited Nano-Electrodes : ultra hidrophobicity
allowing electrowetting
200nm
To be proved

10. 10
May 2009
Printed Nano-sensors to be functionalized
Printed Nano-scale sensors (400nm-100nm)
400nm 110nm
electrode1 electrode2

11. 11
May 2009
Sensing complementary ssDNA 1/2
1M
10M
100M
L10W400N15
DNA SS
DNA DS
DEN
ImZ=-|Z|sinθ
Re Z= |Z|cos θ
Pristine Sensor (a)
After exposure to complementary ssDNA (b)
After denaturation (c)
Printed sensor IV:
(a) as prepared; (b) exposed to complementary ssDNA;
(c) After denaturation

12. 12
May 2009
Sensing complementary ssDNA 2/2
1k 10k 100k 1M
100k
1M
10M
100M
DNA SS
DNA DS
DEN
Frequency (Hz)
ReZ(Ohm)
100 1k 10k 100k 1M
100k
1M
10M
100M
1G
Frequency (Hz)
DNA SS
DNA DS
DEN
-ImZ(Ohm)