The document discusses memory solutions and trends in enterprise computing. It forecasts strong growth in the total available market for DRAM through 2016. It outlines opportunities for Micron to provide memory architectures like DDR4, small form factor DIMMs for microservers, and non-volatile DIMMs that combine DRAM and NAND flash.

1. ©2012 Micron Technology, Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications
are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and
the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners.
1©2012 Micron Technology, Inc. |June 15, 2013
New Memory Solutions for
Enterprise Computing
June 2013

2. 2©2012 Micron Technology, Inc. |
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2012 2013 2014 2015 2016
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WW DRAM Growth Forecast
Source: Finance Strategy Supply/Demand Model D1
PC TAM
CAGR: 14%
1GbEq(M)1GbEq(M)
Server & Storage TAM
Graphics and Consumer TAM
1GbEq(M)
CAGR: 26%
June 15, 2013
2013 WW DRAM TAM
PC = DT, NB, Ultrathin, Tablet, Netbook, and Upgrade Modules
Networking TAM
1GbEq(M)
Total TAM CAGR ‘12-’16
29%
CAGR: 47%
1GbEq(M)
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2012 2013 2014 2015 2016
CAGR: 48%
0
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1,000
1,500
2,000
2012 2013 2014 2015 2016
CAGR: 29%
Mobile TAM
Server &
Storage
15%
Networking
2%
PC
49%
Graphics &
Consumer
11%
Mobile
21%
Other
2%

3. 3©2012 Micron Technology, Inc. |
0
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10,000
15,000
20,000
25,000
CQ1'13 CQ2'13 CQ3'13 CQ4'13 CQ1'14 CQ2'14 CQ3'14 CQ4'14 CQ1'15 CQ2'15 CQ3'15 CQ4'15 CQ1'16 CQ2'16 CQ3'16 CQ4'16
June 15, 2013
Server & Storage DRAM Module Density
Modules(000s)
64GB
Source: Micron Business Development – 2Q’13
18661600 2133
DDR3 speeds DDR4 speeds
8GB
2GB, 4GB
16GB
32GB
2400

4. 4©2012 Micron Technology, Inc. |
Driving Solutions for Enterprise Computing
June 15, 2013
Key Implications
Micron offers Memory Architectures for Enterprise Computing
Market Trends
NVDIMM
Persistent Memory
Applications
Mission Critical
Micro-Server DIMMs
SORDIMM, ECC SODIMM, Mini-
VLP UDIMM
OEM
DDR4
Next Generation
Mainstream DRAM
• Demand side fragmentation : Enterprise
segment continues to rapidly sub-segment into
commoditized cloud space and traditional OEM space
• Supply side consolidation : Scalable vendor base
continues to reduce in size for key customers
opening up collaborative landscape for technology
developers
• Disruptive growth : Focus on BI & Analytics
driving SDDC/SDN architecture targeting hardware
commoditization
• Cloud segment : Public Cloud drives scale-out
business and enables microserver growth over time
• Non-Cloud segment : Traditional enterprise
applications drive scale-up business, in-memory
computing technologies and platform differentiation
• Divergent Requirements : Notable differences in
memory requirements for performance, capacity, and
speed developing across cloud and non-cloud
segments

5. 5©2012 Micron Technology, Inc. |
Small Form Factor DIMMs for Micro-Servers
Small Footprint, High Capacity
June 15, 2013
ECC SODIMM/ SORDIMM/VLP RDIMM
Micro-Server DRAM Market Outlook
• ECC SODIMM:
o 4/8GB density
o SDP components, JEDEC standard definition
• SORDIMM:
o 16GB density
o DDP components, JEDEC standard definition
• VLP RDIMM:
o 4/8/16GB density, SDP and DDP components
0%
10%
20%
30%
40%
50%
0
250
500
750
1000
CQ1'12
CQ2'12
CQ3'12
CQ4'12
CQ1'13
CQ2'13
CQ3'13
CQ4'13
CQ1'14
CQ2'14
CQ3'14
CQ4'14
CQ1'15
CQ2'15
CQ3'15
CQ4'15
CQ1'16
CQ2'16
CQ3'16
CQ4'16
M Gb EQ for uServer uServer % of Server DRAM
Current Trends
• Gaining Traction in data center buildouts
• Marked growth of customers planning or
introducing micro-server products
• Low density modules solidifying around ECC
SODIMM and high density around SORDIMM and
VLP RDIMM
• DDR3 transition to DDR4 expected when cost
premium is near zero

6. 6©2012 Micron Technology, Inc. |June 15, 2013
Why DDR4?
Packing power and performance into a new generation of DRAM
 Up to 50% bandwidth increase over DDR3
 Data rates reaching 2400 Mb/s today and will go up to 3200 Mb/s in future
 Faster burst accesses
Speed
 Voltage reduction to 1.2V  20% reduction in power compared with DDR3
 DLL-off mode for system frequency scaling
 TCR for optimizing refresh power consumption with no impact to controller scheduling
 LPASR mode adjusts self-refresh rate based on device temperature for maximum standby power
Power
 JTAG boundary scan enables early fault detection during system test  reduced debug time and saved
development & production costs
 Improved data signal integrity and system reliability
Quality
 Support up to 16Gb die density
 Multi-rank package support
 Higher capacity memory subsystem  Up to 8-die stacking
Density

7. 7©2012 Micron Technology, Inc. |
Non-Volatile DIMM
Combination DRAM and NAND for backup and persistent data applications
June 15, 2013
Overview Operation & Value Proposition
Ultracapacitor Module
Self-contained energy source for
operation during power failure • Provides data retention in the event of a
power fail or system crash and a means
to implement basic checkpoint schemes
• Looks like an RDIMM to the system
during normal operation
• Transfers data from DRAM to NAND
upon power failure or system crash
• Valuable wherever the bottleneck is
storage and I/O and where downtime
costs moneyNVDIMM Controller
Flash management and
high speed DMA
Onboard DRAM & NAND
DRAM performance and non-
volatility