Primary results or synthesis and characteristics of thin-film materials for PV converters. Work performed by 4-point-probe method, Hall effect, magnetron sputtering, electron microscopy.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Investigation of heat transfer through cnt composites focusing on conduction ...IAEME Publication
1. The document investigates heat transfer through carbon nanotube composites, focusing on the conduction mode.
2. It summarizes the synthesis and preparation of aligned multi-walled carbon nanotube samples embedded in anodic aluminum oxide templates, as well as randomly oriented films of multi-walled carbon nanotubes, single-walled carbon nanotubes, and graphite powder.
3. The specific heat and thermal conductivity of the samples are measured from 300 to 400K. The specific heat of the aligned nanotube sample has weaker temperature dependence than the random films and bulk graphite. The thermal conductivity of the aligned sample increases with temperature, while the random films and graphite show a
IRJET- Investigation of Organic Solar Cell at Different Active Layer Thic...IRJET Journal
The document investigates how the power conversion efficiency of organic solar cells is affected by the active layer thickness and light intensity (measured in suns).
The researcher used GPVDM software to simulate organic solar cells with different active layer thicknesses of 100-300nm under light intensities of 1-40 suns.
The results showed that the maximum power conversion efficiency occurred at an active layer thickness of 200nm for light intensities of 1, 10, 30 and 40 suns. However, for light intensities of 20 suns, the maximum efficiency was at a thickness of 100nm. In general, higher light intensities resulted in higher short circuit current densities.
This document summarizes a study on the effect of doping on electrical properties of ZnS thin films. Pure ZnS and Pb-doped ZnS thin films were prepared by thermal evaporation. Hall effect measurements showed that conductivity changed from n-type to p-type with doping. I-V characteristics exhibited diode-like behavior. Doping increased carrier concentration and conductivity. The ideality factor was calculated from I-V curves. Overall, doping improved film properties and ZnS:Pb could potentially be used in solar cell devices.
Growth and Magnetic properties of MnGeP2 thin filmsinventy
We have successfully grown MnGeP2 thin films on GaAs (100) substrate. A ferromagnetic transition near 320 K has been observed by temperature dependent magnetization and resistance measurements. Field dependent magnetization experiments have shown that the coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. Magnetoresistance and Hall measurements have displayed that hole conduction is dominant in MnGeP2. PACS: 75.50.Pp, 75.70.-i, 85.70.-w, 73.50.-h
Graphene Transistors : Study for Analog and Digital applicationsvishal anand
This document summarizes a simulation study of graphene-based transistors for digital and analog applications. It provides an introduction to graphene basics and graphene nanoribbon field-effect transistor (GNR FET) structure. The document describes the software used for simulation and shows parametric simulation results. It calculates key digital parameters like ION/IOFF ratio and subthreshold swing and analog parameters like transconductance and drain resistance for the GNR FET. The modeling results are found to agree with experimental data. Challenges in GNR FETs include needing both n-type and p-type devices and relatively high voltage swings currently needed for switching.
Iaetsd structural and electronic properties of dopedIaetsd Iaetsd
This document summarizes simulation results on the structural and electronic properties of silicon nanowires doped with aluminum and phosphorus atoms. Key findings include:
1) Total energy decreases with more doping, indicating greater stability. Phosphorus doping provides more stability than aluminum doping.
2) Bandgap decreases or disappears with doping, increasing metallic properties. More doping leads to more conduction lines crossing the Fermi level.
3) Density of states plots show peaks shifting and changing with doping, indicating changes in electronic structure and semiconducting to metallic transition.
Influence of input power in Ar/H2 thermal plasma with silicon powder by numer...TELKOMNIKA JOURNAL
Numerical simulation in inductively coupled thermal plasma was made on the temperature distribution in argon (Ar)+hydrogen (H2) induction thermal plasma torch with silicon (Si) powder injection to obtain the temperature distribution and gas flow fields. The ICTP model was used in this research because it has benefit of good repeatability and no contamination process. Interactions between ICTP and injected powder are very complicated to be understood only by related experiments. Influence of input power in ICTP was numerically investigated on thermal plasma temperature fields and powder evaporation. The temperature distributions of thermal plasma and Si vapor distribution were compared at input powers of 20 kW, 30 kW, and 40 kW. Results indicated that higher input power increases the temperature of the thermal plasma with doughnut shape but it slightly enhances evaporation of the powder at the center axis of the plasma torch.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Investigation of heat transfer through cnt composites focusing on conduction ...IAEME Publication
1. The document investigates heat transfer through carbon nanotube composites, focusing on the conduction mode.
2. It summarizes the synthesis and preparation of aligned multi-walled carbon nanotube samples embedded in anodic aluminum oxide templates, as well as randomly oriented films of multi-walled carbon nanotubes, single-walled carbon nanotubes, and graphite powder.
3. The specific heat and thermal conductivity of the samples are measured from 300 to 400K. The specific heat of the aligned nanotube sample has weaker temperature dependence than the random films and bulk graphite. The thermal conductivity of the aligned sample increases with temperature, while the random films and graphite show a
IRJET- Investigation of Organic Solar Cell at Different Active Layer Thic...IRJET Journal
The document investigates how the power conversion efficiency of organic solar cells is affected by the active layer thickness and light intensity (measured in suns).
The researcher used GPVDM software to simulate organic solar cells with different active layer thicknesses of 100-300nm under light intensities of 1-40 suns.
The results showed that the maximum power conversion efficiency occurred at an active layer thickness of 200nm for light intensities of 1, 10, 30 and 40 suns. However, for light intensities of 20 suns, the maximum efficiency was at a thickness of 100nm. In general, higher light intensities resulted in higher short circuit current densities.
This document summarizes a study on the effect of doping on electrical properties of ZnS thin films. Pure ZnS and Pb-doped ZnS thin films were prepared by thermal evaporation. Hall effect measurements showed that conductivity changed from n-type to p-type with doping. I-V characteristics exhibited diode-like behavior. Doping increased carrier concentration and conductivity. The ideality factor was calculated from I-V curves. Overall, doping improved film properties and ZnS:Pb could potentially be used in solar cell devices.
Growth and Magnetic properties of MnGeP2 thin filmsinventy
We have successfully grown MnGeP2 thin films on GaAs (100) substrate. A ferromagnetic transition near 320 K has been observed by temperature dependent magnetization and resistance measurements. Field dependent magnetization experiments have shown that the coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. Magnetoresistance and Hall measurements have displayed that hole conduction is dominant in MnGeP2. PACS: 75.50.Pp, 75.70.-i, 85.70.-w, 73.50.-h
Graphene Transistors : Study for Analog and Digital applicationsvishal anand
This document summarizes a simulation study of graphene-based transistors for digital and analog applications. It provides an introduction to graphene basics and graphene nanoribbon field-effect transistor (GNR FET) structure. The document describes the software used for simulation and shows parametric simulation results. It calculates key digital parameters like ION/IOFF ratio and subthreshold swing and analog parameters like transconductance and drain resistance for the GNR FET. The modeling results are found to agree with experimental data. Challenges in GNR FETs include needing both n-type and p-type devices and relatively high voltage swings currently needed for switching.
Iaetsd structural and electronic properties of dopedIaetsd Iaetsd
This document summarizes simulation results on the structural and electronic properties of silicon nanowires doped with aluminum and phosphorus atoms. Key findings include:
1) Total energy decreases with more doping, indicating greater stability. Phosphorus doping provides more stability than aluminum doping.
2) Bandgap decreases or disappears with doping, increasing metallic properties. More doping leads to more conduction lines crossing the Fermi level.
3) Density of states plots show peaks shifting and changing with doping, indicating changes in electronic structure and semiconducting to metallic transition.
Influence of input power in Ar/H2 thermal plasma with silicon powder by numer...TELKOMNIKA JOURNAL
Numerical simulation in inductively coupled thermal plasma was made on the temperature distribution in argon (Ar)+hydrogen (H2) induction thermal plasma torch with silicon (Si) powder injection to obtain the temperature distribution and gas flow fields. The ICTP model was used in this research because it has benefit of good repeatability and no contamination process. Interactions between ICTP and injected powder are very complicated to be understood only by related experiments. Influence of input power in ICTP was numerically investigated on thermal plasma temperature fields and powder evaporation. The temperature distributions of thermal plasma and Si vapor distribution were compared at input powers of 20 kW, 30 kW, and 40 kW. Results indicated that higher input power increases the temperature of the thermal plasma with doughnut shape but it slightly enhances evaporation of the powder at the center axis of the plasma torch.
International Refereed Journal of Engineering and Science (IRJES)irjes
The core of the vision IRJES is to disseminate new knowledge and technology for the benefit of all, ranging from academic research and professional communities to industry professionals in a range of topics in computer science and engineering. It also provides a place for high-caliber researchers, practitioners and PhD students to present ongoing research and development in these areas.
Electromagnetic studies on nano sized magnesium ferriteIAEME Publication
The document summarizes research on the electromagnetic properties of nano-sized magnesium ferrite synthesized using microwave techniques. Key findings include:
1) Magnetic properties were measured using VSM which showed the material has a high coercivity of 785.12 Oe, classifying it as a hard magnetic material.
2) Dielectric measurements found the ac conductivity and dielectric constant decreased with increasing frequency. Both increased with temperature initially before decreasing.
3) The dielectric loss showed expected dispersion behavior, decreasing with frequency and generally increasing with temperature.
4) A high quality factor of 150 was obtained, higher than for bulk ferrites, indicating potential applications in microwave devices.
Electrical properties of Ni0.4Mg0.6Fe2O4 ferritesIJERA Editor
Ni0.4Mg0.6Fe2O4 Ceramic samples were prepared by conventional double sintering approach and sintered at 1300oC/4 h. These ferrites are further characterized using X-ray diffractometer. The diffraction study reveals that the present compound shows perfect single phase cubic spinel structure. In addition, the behavior of distinct electrical properties such as dielectric constant (ε'), dielectric loss (ε") and ac-conductivity (ζac) as a function frequency as well as temperature is analyzed using the LCR controller.
Influence of Rare Earth (Gd3+) On Electrical and Magnetic Studies of Nickel F...paperpublications3
Abstract: Nanoparticles NiFe2-xGdxO4 (x=0, 0.1, 0.2, 0.3, 0.4) was prepared by solgel combution method. The samples were characterized with VSM and Electrical measurements. Complex impedance and Complex electric modulus plots were further studied for complete contribution of grains and grain boundary resistances to conduction and resonance frequencies respectively. Magnetic studies by Vibrating Sample Magnetometer (VSM) shows that magnetization (Ms) decreases with increase in Gd3+ concentration. Coercivity (Hc) first decreases for x=0.1, after which it increases up to x=0.4.
This document analyzes the electrical properties of aluminum/zinc oxide/aluminum thin films prepared by thermal evaporation at different annealing temperatures. It finds that:
1) The films' AC conductivity obeys a power law relationship with frequency and the exponent decreases with increasing annealing temperature, indicating correlated barrier hopping is the dominant conduction mechanism.
2) Both the dielectric constant and loss factor increase with rising frequency and annealing temperature.
3) Cole-Cole diagrams show single relaxation mechanisms are present, and polarization increases with higher annealing temperatures, suggesting a polydisperse dielectric response.
4) Overall, the study characterizes how annealing temperature affects the AC conductivity and dielectric properties of the ZnO thin
The effect of magnetic field direction on thermoelectric and thermomagnetic c...Muhammid Al-Baghdadi
This document investigates the effect of magnetic field direction on thermoelectric and thermomagnetic coefficients of undoped single crystalline InSb at room temperature. It describes how samples of InSb were tested under varying magnetic fields and temperature gradients to measure the Seebeck and Nernst coefficients. The results showed that the Seebeck coefficient depended only on the temperature gradient, while the Nernst coefficient depended on both the temperature gradient and magnetic field. However, the values of the thermoelectric and thermomagnetic coefficients were found to be independent of the direction of the applied magnetic field with respect to the InSb sample surface.
The document discusses various factors that influence the electrical properties of carbon nanotube-silicon contacts, including the number of concentric layers in contact with the electrode, contact geometry, contact area, electrode materials, and interface coupling. It also examines characteristics such as conductivity and I-V response for different CNT-silicon contact configurations and the effects of pressure, temperature, and contact annealing.
The document summarizes research on localized growth of multi-walled carbon nanotubes (MWCNT) using an on-chip microelectromechanical systems (MEMS) heater. Key findings include that applying an electric field of 0.6-1 V/μm to the heater during chemical vapor deposition at temperatures over 850°C and a gas flow rate of 50/50 sccm Ar/C2H2 led to the controlled, localized growth of straight MWCNTs 5-10 μm in length and less than 10nm in diameter growing at a rate of around 3μm/min. Increasing the electric field or decreasing the gas flow rate was found to decrease the growth rate.
A Study of Electrical and Magnetic Properties of La+3 Substituted Ni-Zn Ferritesiosrjce
IOSR Journal of Applied Physics (IOSR-JAP) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of physics and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in applied physics. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
Developed a physics-based model describing electric, thermal interaction between the lightning channel and CFRP composite panel (Most advanced model related to lightning strike damage in composite structure in existing literature)
Applied the developed models for evaluation of material ablation in the NASA carbon fiber-reinforce polymer-matrix composite substrate due to simulated lightning current injection
1) A triboelectric nanogenerator (TENG) was developed using a polytetrafluoroethylene (PTFE) thin film and a layer of chemically modified TiO2 nanomaterials (nanowire array or nanosheet array).
2) When detecting catechin, the output voltage and current density of the TENG were increased by factors of 5.0 and 2.9, respectively, due to charge transfer from catechin molecules to the TiO2.
3) The TENG demonstrated high sensitivity for catechin detection, with a detection limit of 5 μM and a linear detection range from 10 μM to 0.5 mM.
Developed a finite element analysis (FEA) procedure for calculating the electric field in the wind turbine blades due to a lightning stepped leader and estimate whether dielectric breakdown occurs
Developed a physics-based model describing thermal interaction between the lightning channel and composite structure
Applied the developed models for evaluation of thermal damage in the non-conductive All-glass Baseline Wind Turbine Blade (SNL 100-00) due to lightning strike
Applied the model to evaluate the thermal ablation damage in the electrically conductive CFRP composite subjected to the lightning strike
Validated the numerical model by comparing the simulation results with reported experimental results
Compositional and electrical properties of cds thin films by vacuum evaporati...IAEME Publication
This document summarizes research on the compositional and electrical properties of cadmium sulfide (CdS) thin films deposited using vacuum evaporation. Energy dispersive x-ray analysis was used to analyze the film composition and showed the films contained cadmium, sulfur, and oxygen. Electrical resistivity measurements using the four-probe method found the films had high resistivity on the order of 10-6 cm. Thermal activation energy increased with increasing film thickness from 0.6345 eV to 0.7095 eV. In conclusion, CdS thin films were successfully deposited and their composition and electrical properties were characterized.
1) Laser operation was achieved in a neodymium-doped scandium silicate (Nd:SSO) crystal based on the 4F3/2→4I9/2 transition of Nd3+ ions. Pumped by an 808 nm laser diode, laser emission at 914 nm was obtained with an output power of 581 mW.
2) Spectroscopic measurements of the Nd:SSO crystal found absorption and emission cross sections of 1.69×10-20 cm2 and 1.13×10-20 cm2 respectively at relevant wavelengths. The gain cross section was estimated to allow lasing inversion at β=0.25.
3) Compared to other
Structure, microstructure and dielectric study of (ba0.6 sr0.4)(zr0.6ti0.4)o3...eSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Growth and Magnetic properties of MnGeP2 thin filmsresearchinventy
We have successfully grown MnGeP2 thin films on GaAs (100) substrate. A ferromagnetic transition near 320 K has been observed by temperature dependent magnetization and resistance measurements. Field dependent magnetization experiments have shown that the coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. Magnetoresistance and Hall measurements have displayed that hole conduction is dominant in MnGeP2. PACS: 75.50.Pp, 75.70.-i, 85.70.-w, 73.50.-h
IRJET-A Review on Utilization of Waste Heat from Automobile Based on Thermoel...IRJET Journal
This document discusses using metal-doped zinc oxide nanoparticles for water treatment in industries. It begins by introducing zinc oxide nanoparticles and the need to dope them with metals like magnesium to modify their properties. It then describes how magnesium-doped zinc oxide nanoparticles were synthesized using a sol-gel method. Characterization of the nanoparticles showed they were uniform in size and distribution. Experiments were conducted using these nanoparticles to degrade methylene blue dye in water via a photocatalytic process when exposed to light. The mechanism of photocatalysis is explained where light generates electron-hole pairs that initiate degradation reactions on the nanoparticle surfaces. The goal is to use this process to treat wastewater from industries in an efficient and environmentally friendly
Device simulation of perovskite solar cells with molybdenum disulfide as acti...journalBEEI
Organo-halide Perovskite Solar Cells (PSC) have been reported to achieve remarkably high power conversion efficiency (PCE). A thorough understanding of the role of each component in solar cells and their effect as a whole is still required for further improvement in PCE. In this paper, the effect of Molybdenum Disulfide (MoS2) in PSC with mesoporous structure configuration was analyzed using Solar Cell Capacitance Simulator (SCAPS). With the MoS2 layer which having two-fold function, acting as a protective layer, by preventing the formation of shunt contacts between perovskite and Au electrode, and as a hole transport material (HTM) from the perovskite to the Spiro-OMETAD. As simulated, PSC demonstrates a PCE, ŋ of 13.1%, along with stability compared to typical structure of PSC without MoS2 (Δ ŋ/ŋ=-9% vs. Δ ŋ/ŋ=-6%). The results pave the way towards the implementation of MoS2 as a material able to boost shelf life which very useful for new material choice and optimization of HTMs
In this research, the effects of magnetic field intensity on electrical characteristics of a monocrystalline silicon solar cell were investigated. The experimental test-rig under Standard Test Condition was set up and tested to observe the respective effects. The electrical characteristics in terms of current-voltage-power curves, critical solar cell parameters and fill factor were then examined and analyzed. The outcome of this study demonstrates that the external magnetic field has a positive impact on electrical parameters, the experimental results showed that applying magnetic intensity of 60-260mT significantly affected the electrical characteristics of the cell; i.e., maximized cell current, voltage and power by 12.20, 7.12 and 23.60%, respectively. In addition, this positive impact consequencely happened on the i-v and p-v electrical characteristics curves of the solar cell; reflected by 3.69% increasing in the fill factor.
Ultra-optical characterization of thin film solar cells materials using core...IJECEIAES
This paper investigates on new design of heterojunction quantum dot (HJQD) photovoltaics solar cells CdS/PbS that is based on quantum dot metallics PbS core/shell absorber layer and quantum dot window layer. It has been enhanced the performance of traditional HJQD thin film solar cells model based on quantum dot absorber layer and bulk window layer. The new design has been used sub-micro absorber layer thickness to achieve high efficiency with material reduction, low cost, and time. Metallicssemiconductor core/shell absorber layer has been succeeded for improving the optical characteristics such energy band gap and the absorption of absorber layer materials, also enhancing the performance of HJQD ITO/CdS/QDPbS/Au, sub micro thin film solar cells. Finally, it has been formulating the quantum dot (QD) metallic cores concentration effect on the absorption, energy band gap and electron-hole generation rate in absorber layers, external quantum efficiency, energy conversion efficiency, fill factor of the innovative design of HJQD cells.
Microscopy microanalysis microstructures_the european physical journal_applie...Andrea Sentimenti
This document describes a method for fabricating nano-sized carbon tips in a scanning electron microscope (SEM) using controlled carbon contamination. Key steps include: using a 30kV beam for highest contamination rate; smallest spot size (~5nm); stable, well-focused beam; and a carbon block nearby to increase carbon concentration. Tips with 10° aperture and ~5nm tip are produced in under 60 seconds. Successive focusing during growth produces tips shaped like stacked cones rather than a single paraboloid. The tips are used as probes in atomic force microscopy, achieving higher resolution than conventional probes due to their small size and shape. They are also used as field emitters for electron guns due to their nanoscale size and
Simulation Of Algan/Si And Inn/Si Electric - Devicesijrap
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed.
International Refereed Journal of Engineering and Science (IRJES)irjes
The core of the vision IRJES is to disseminate new knowledge and technology for the benefit of all, ranging from academic research and professional communities to industry professionals in a range of topics in computer science and engineering. It also provides a place for high-caliber researchers, practitioners and PhD students to present ongoing research and development in these areas.
Electromagnetic studies on nano sized magnesium ferriteIAEME Publication
The document summarizes research on the electromagnetic properties of nano-sized magnesium ferrite synthesized using microwave techniques. Key findings include:
1) Magnetic properties were measured using VSM which showed the material has a high coercivity of 785.12 Oe, classifying it as a hard magnetic material.
2) Dielectric measurements found the ac conductivity and dielectric constant decreased with increasing frequency. Both increased with temperature initially before decreasing.
3) The dielectric loss showed expected dispersion behavior, decreasing with frequency and generally increasing with temperature.
4) A high quality factor of 150 was obtained, higher than for bulk ferrites, indicating potential applications in microwave devices.
Electrical properties of Ni0.4Mg0.6Fe2O4 ferritesIJERA Editor
Ni0.4Mg0.6Fe2O4 Ceramic samples were prepared by conventional double sintering approach and sintered at 1300oC/4 h. These ferrites are further characterized using X-ray diffractometer. The diffraction study reveals that the present compound shows perfect single phase cubic spinel structure. In addition, the behavior of distinct electrical properties such as dielectric constant (ε'), dielectric loss (ε") and ac-conductivity (ζac) as a function frequency as well as temperature is analyzed using the LCR controller.
Influence of Rare Earth (Gd3+) On Electrical and Magnetic Studies of Nickel F...paperpublications3
Abstract: Nanoparticles NiFe2-xGdxO4 (x=0, 0.1, 0.2, 0.3, 0.4) was prepared by solgel combution method. The samples were characterized with VSM and Electrical measurements. Complex impedance and Complex electric modulus plots were further studied for complete contribution of grains and grain boundary resistances to conduction and resonance frequencies respectively. Magnetic studies by Vibrating Sample Magnetometer (VSM) shows that magnetization (Ms) decreases with increase in Gd3+ concentration. Coercivity (Hc) first decreases for x=0.1, after which it increases up to x=0.4.
This document analyzes the electrical properties of aluminum/zinc oxide/aluminum thin films prepared by thermal evaporation at different annealing temperatures. It finds that:
1) The films' AC conductivity obeys a power law relationship with frequency and the exponent decreases with increasing annealing temperature, indicating correlated barrier hopping is the dominant conduction mechanism.
2) Both the dielectric constant and loss factor increase with rising frequency and annealing temperature.
3) Cole-Cole diagrams show single relaxation mechanisms are present, and polarization increases with higher annealing temperatures, suggesting a polydisperse dielectric response.
4) Overall, the study characterizes how annealing temperature affects the AC conductivity and dielectric properties of the ZnO thin
The effect of magnetic field direction on thermoelectric and thermomagnetic c...Muhammid Al-Baghdadi
This document investigates the effect of magnetic field direction on thermoelectric and thermomagnetic coefficients of undoped single crystalline InSb at room temperature. It describes how samples of InSb were tested under varying magnetic fields and temperature gradients to measure the Seebeck and Nernst coefficients. The results showed that the Seebeck coefficient depended only on the temperature gradient, while the Nernst coefficient depended on both the temperature gradient and magnetic field. However, the values of the thermoelectric and thermomagnetic coefficients were found to be independent of the direction of the applied magnetic field with respect to the InSb sample surface.
The document discusses various factors that influence the electrical properties of carbon nanotube-silicon contacts, including the number of concentric layers in contact with the electrode, contact geometry, contact area, electrode materials, and interface coupling. It also examines characteristics such as conductivity and I-V response for different CNT-silicon contact configurations and the effects of pressure, temperature, and contact annealing.
The document summarizes research on localized growth of multi-walled carbon nanotubes (MWCNT) using an on-chip microelectromechanical systems (MEMS) heater. Key findings include that applying an electric field of 0.6-1 V/μm to the heater during chemical vapor deposition at temperatures over 850°C and a gas flow rate of 50/50 sccm Ar/C2H2 led to the controlled, localized growth of straight MWCNTs 5-10 μm in length and less than 10nm in diameter growing at a rate of around 3μm/min. Increasing the electric field or decreasing the gas flow rate was found to decrease the growth rate.
A Study of Electrical and Magnetic Properties of La+3 Substituted Ni-Zn Ferritesiosrjce
IOSR Journal of Applied Physics (IOSR-JAP) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of physics and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in applied physics. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
Developed a physics-based model describing electric, thermal interaction between the lightning channel and CFRP composite panel (Most advanced model related to lightning strike damage in composite structure in existing literature)
Applied the developed models for evaluation of material ablation in the NASA carbon fiber-reinforce polymer-matrix composite substrate due to simulated lightning current injection
1) A triboelectric nanogenerator (TENG) was developed using a polytetrafluoroethylene (PTFE) thin film and a layer of chemically modified TiO2 nanomaterials (nanowire array or nanosheet array).
2) When detecting catechin, the output voltage and current density of the TENG were increased by factors of 5.0 and 2.9, respectively, due to charge transfer from catechin molecules to the TiO2.
3) The TENG demonstrated high sensitivity for catechin detection, with a detection limit of 5 μM and a linear detection range from 10 μM to 0.5 mM.
Developed a finite element analysis (FEA) procedure for calculating the electric field in the wind turbine blades due to a lightning stepped leader and estimate whether dielectric breakdown occurs
Developed a physics-based model describing thermal interaction between the lightning channel and composite structure
Applied the developed models for evaluation of thermal damage in the non-conductive All-glass Baseline Wind Turbine Blade (SNL 100-00) due to lightning strike
Applied the model to evaluate the thermal ablation damage in the electrically conductive CFRP composite subjected to the lightning strike
Validated the numerical model by comparing the simulation results with reported experimental results
Compositional and electrical properties of cds thin films by vacuum evaporati...IAEME Publication
This document summarizes research on the compositional and electrical properties of cadmium sulfide (CdS) thin films deposited using vacuum evaporation. Energy dispersive x-ray analysis was used to analyze the film composition and showed the films contained cadmium, sulfur, and oxygen. Electrical resistivity measurements using the four-probe method found the films had high resistivity on the order of 10-6 cm. Thermal activation energy increased with increasing film thickness from 0.6345 eV to 0.7095 eV. In conclusion, CdS thin films were successfully deposited and their composition and electrical properties were characterized.
1) Laser operation was achieved in a neodymium-doped scandium silicate (Nd:SSO) crystal based on the 4F3/2→4I9/2 transition of Nd3+ ions. Pumped by an 808 nm laser diode, laser emission at 914 nm was obtained with an output power of 581 mW.
2) Spectroscopic measurements of the Nd:SSO crystal found absorption and emission cross sections of 1.69×10-20 cm2 and 1.13×10-20 cm2 respectively at relevant wavelengths. The gain cross section was estimated to allow lasing inversion at β=0.25.
3) Compared to other
Structure, microstructure and dielectric study of (ba0.6 sr0.4)(zr0.6ti0.4)o3...eSAT Publishing House
IJRET : International Journal of Research in Engineering and Technology is an international peer reviewed, online journal published by eSAT Publishing House for the enhancement of research in various disciplines of Engineering and Technology. The aim and scope of the journal is to provide an academic medium and an important reference for the advancement and dissemination of research results that support high-level learning, teaching and research in the fields of Engineering and Technology. We bring together Scientists, Academician, Field Engineers, Scholars and Students of related fields of Engineering and Technology.
Growth and Magnetic properties of MnGeP2 thin filmsresearchinventy
We have successfully grown MnGeP2 thin films on GaAs (100) substrate. A ferromagnetic transition near 320 K has been observed by temperature dependent magnetization and resistance measurements. Field dependent magnetization experiments have shown that the coercive fields at 5, 250, and 300 K are 3870, 1380 and 155 Oe, respectively. Magnetoresistance and Hall measurements have displayed that hole conduction is dominant in MnGeP2. PACS: 75.50.Pp, 75.70.-i, 85.70.-w, 73.50.-h
IRJET-A Review on Utilization of Waste Heat from Automobile Based on Thermoel...IRJET Journal
This document discusses using metal-doped zinc oxide nanoparticles for water treatment in industries. It begins by introducing zinc oxide nanoparticles and the need to dope them with metals like magnesium to modify their properties. It then describes how magnesium-doped zinc oxide nanoparticles were synthesized using a sol-gel method. Characterization of the nanoparticles showed they were uniform in size and distribution. Experiments were conducted using these nanoparticles to degrade methylene blue dye in water via a photocatalytic process when exposed to light. The mechanism of photocatalysis is explained where light generates electron-hole pairs that initiate degradation reactions on the nanoparticle surfaces. The goal is to use this process to treat wastewater from industries in an efficient and environmentally friendly
Device simulation of perovskite solar cells with molybdenum disulfide as acti...journalBEEI
Organo-halide Perovskite Solar Cells (PSC) have been reported to achieve remarkably high power conversion efficiency (PCE). A thorough understanding of the role of each component in solar cells and their effect as a whole is still required for further improvement in PCE. In this paper, the effect of Molybdenum Disulfide (MoS2) in PSC with mesoporous structure configuration was analyzed using Solar Cell Capacitance Simulator (SCAPS). With the MoS2 layer which having two-fold function, acting as a protective layer, by preventing the formation of shunt contacts between perovskite and Au electrode, and as a hole transport material (HTM) from the perovskite to the Spiro-OMETAD. As simulated, PSC demonstrates a PCE, ŋ of 13.1%, along with stability compared to typical structure of PSC without MoS2 (Δ ŋ/ŋ=-9% vs. Δ ŋ/ŋ=-6%). The results pave the way towards the implementation of MoS2 as a material able to boost shelf life which very useful for new material choice and optimization of HTMs
In this research, the effects of magnetic field intensity on electrical characteristics of a monocrystalline silicon solar cell were investigated. The experimental test-rig under Standard Test Condition was set up and tested to observe the respective effects. The electrical characteristics in terms of current-voltage-power curves, critical solar cell parameters and fill factor were then examined and analyzed. The outcome of this study demonstrates that the external magnetic field has a positive impact on electrical parameters, the experimental results showed that applying magnetic intensity of 60-260mT significantly affected the electrical characteristics of the cell; i.e., maximized cell current, voltage and power by 12.20, 7.12 and 23.60%, respectively. In addition, this positive impact consequencely happened on the i-v and p-v electrical characteristics curves of the solar cell; reflected by 3.69% increasing in the fill factor.
Ultra-optical characterization of thin film solar cells materials using core...IJECEIAES
This paper investigates on new design of heterojunction quantum dot (HJQD) photovoltaics solar cells CdS/PbS that is based on quantum dot metallics PbS core/shell absorber layer and quantum dot window layer. It has been enhanced the performance of traditional HJQD thin film solar cells model based on quantum dot absorber layer and bulk window layer. The new design has been used sub-micro absorber layer thickness to achieve high efficiency with material reduction, low cost, and time. Metallicssemiconductor core/shell absorber layer has been succeeded for improving the optical characteristics such energy band gap and the absorption of absorber layer materials, also enhancing the performance of HJQD ITO/CdS/QDPbS/Au, sub micro thin film solar cells. Finally, it has been formulating the quantum dot (QD) metallic cores concentration effect on the absorption, energy band gap and electron-hole generation rate in absorber layers, external quantum efficiency, energy conversion efficiency, fill factor of the innovative design of HJQD cells.
Microscopy microanalysis microstructures_the european physical journal_applie...Andrea Sentimenti
This document describes a method for fabricating nano-sized carbon tips in a scanning electron microscope (SEM) using controlled carbon contamination. Key steps include: using a 30kV beam for highest contamination rate; smallest spot size (~5nm); stable, well-focused beam; and a carbon block nearby to increase carbon concentration. Tips with 10° aperture and ~5nm tip are produced in under 60 seconds. Successive focusing during growth produces tips shaped like stacked cones rather than a single paraboloid. The tips are used as probes in atomic force microscopy, achieving higher resolution than conventional probes due to their small size and shape. They are also used as field emitters for electron guns due to their nanoscale size and
Simulation Of Algan/Si And Inn/Si Electric - Devicesijrap
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed.
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESijrap
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 μm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed.
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESijrap
In this work, efficient solar-blind metal-semiconductor photodetectors grown on Si (111) by
molecular beam epitaxy are reported. Growth details are described,the comparison enters the
properties electric of InN/Si and AlGaN/Si photodectors with 0.2 µm of AlGaN and InN layers.
Modeling and simulation were performed by using ATLAS-TCAD simulator. Energy band
diagram, doping profile, conduction current density,I-V caracteristic , internal potential and
electric field were performed
Potential enhancement of thermoelectric energy conversion in cobaltite superl...Anastasios Englezos
This document is a master's thesis submitted by Tasos Englezos investigating the potential enhancement of thermoelectric energy conversion in cobaltite oxide superlattices. The thesis aims to grow superlattices composed of alternating layers of NaxCoO3 and Ca3Co4O9 using pulsed laser deposition, as both materials show promise for thermoelectric applications but also have limitations. Characterization of the superlattices shows the structures maintain crystalline coherence while electrical and thermal properties are preserved at a good level. Further measurements of thermal conductivity are needed to determine if the superlattice approach reduces thermal conductivity and thereby improves thermoelectric efficiency in these cobaltite oxides.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Advances In Single-Charge Detectors And Their ApplicationsRichard Hogue
This document discusses advances in single-charge particle detectors and their applications. It summarizes that modern gas avalanche detectors are well-suited for detecting single charges deposited in gas or emitted from thin solid converters. Recent developments in micro-pattern gaseous multipliers have allowed the combination of solid photocathodes with these multipliers, enabling large-area flat detectors for single photon localization. These gas avalanche photomultipliers can operate under high photon flux and magnetic fields. The document reviews several types of photocathodes and protective coatings that enable operation in the UV and visible spectra. It also discusses various gas electron multipliers and their ability to provide high gain while limiting ion and photon feedback effects.
K2O - CdO - B2O3 – SiO2glasses containing different concentrations of MnO2 have been prepared. The Physical properties of the glasses are studied from their density. The studies have been analysed in the light of different oxidation states of manganese ion with the aid of the data from optical absorption. The analysis shows that manganese ions exist mainly in Mn2+ state, occupy tetrahedral positions and increase the insulating strength of the glass if MnO2 is present in smaller concentrations.
This document summarizes research on conducting aluminum-doped zinc oxide films deposited at low temperature using an electrochemical deposition method. ZnO films doped with various molar ratios of aluminum nitrate and zinc nitrate were deposited at 70°C using a three-electrode setup. X-ray diffraction analysis showed the successful doping of aluminum into the crystal structure of ZnO without secondary phase formation. Electrical resistivity measurements found the lowest resistivity for a composition ratio of 7:3. Optical characterization showed over 90% transmittance and band gap widening with different aluminum compositions due to incorporation into the ZnO crystal structure.
Site-specific measurement of the giant magnetoresistance (GMR) of individual ...iosrjce
1. The document describes a new technique for measuring the giant magnetoresistance (GMR) of individual multilayer nanowires inside a scanning electron microscope (SEM).
2. Using nanomanipulators equipped with sharp tips, the resistance of NiFe/Pt multilayer nanowires can be measured at specific sites as an external magnetic field is varied.
3. Measurements of ~70nm diameter NiFe/Pt nanowires showed a GMR effect of up to 5.8% depending on layer thicknesses and field orientation. This new in-situ method allows precise characterization of nanowire magnetoresistance related to microstructure, geometry, and field orientation.
Vapor Deposition of Semiconducting Phosphorus Allotropes into TiO2 Nanotube A...Pawan Kumar
Recent evidence of exponential environmental degradation will demand a drastic shift in research and development toward exploiting alternative energy resources such as solar energy. Here, we report the successful low-cost and easily accessible synthesis of hybrid semiconductor@TiO2 nanotube photocatalysts. In order to realize its maximum potential in harvesting photons in the visible-light range, TiO2 nanotubes have been loaded with earth-abundant, low-band-gap fibrous red and black phosphorus (P). Scanning electron microscopy– and scanning transmission electron microscopy–energy-dispersive X-ray spectroscopy, X-ray diffraction, Raman spectroscopy, X-ray photoelectron microscopy, and UV–vis measurements have been performed, substantiating the deposition of fibrous red and black P on top and inside the cavities of 100-μm-long electrochemically fabricated nanotubes. The nanotubular …
Greener cum chemical synthesis and characterization of Mg doped ZnS nanoparti...IJERA Editor
In the present investigations, high-quality Mg doped ZnS nanoparticles were synthesized by Greener cum
chemical process with the assistance of polyvinyl pyrrolidone (PVP) with two different Mg concentrations.
Doping of Mg metal in nanoparticles were found to be a good technique for tuning the band gap of ZnS
nanoparticles. Simultaneously, Mg doping also inhibited the growth of particle size and it decreased from 33.2
nm to 18.3 nm with the increase in doping concentration from 0% to 5%. Band gap was found to rise from 3.12
eV to 3.38 eV and photoluminescence studies exposed that visible Photoluminescence (PL) emission was
improved with doping concentration. The nanoparticles have been characterized by Field Emission Scanning
Electron Microscopy (FESEM), X-Ray Diffraction (XRD), Fourier Transform Infrared (FTIR) spectroscopy,
Ultra Violet visible (UV–vis) spectroscopy, and Energy Dispersive X-ray Analysis (EDAX).
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Effect of substrate temperature on the morphological and optical properties o...IOSR Journals
The document summarizes research on the effect of substrate temperature on the morphological and optical properties of ZnO thin films formed by DC magnetron sputtering. ZnO films were deposited on glass substrates held at temperatures between 473-673 K. Atomic force microscopy analysis showed that substrate temperature affected the roughness and grain size of the films. Optical analysis found that substrate temperature influenced the transmittance, band gap, and extinction coefficient of the films. The films deposited near 513 K exhibited optimal optical properties such as highest transmittance and band gap.
HCL Notes und Domino Lizenzkostenreduzierung in der Welt von DLAUpanagenda
Webinar Recording: https://www.panagenda.com/webinars/hcl-notes-und-domino-lizenzkostenreduzierung-in-der-welt-von-dlau/
DLAU und die Lizenzen nach dem CCB- und CCX-Modell sind für viele in der HCL-Community seit letztem Jahr ein heißes Thema. Als Notes- oder Domino-Kunde haben Sie vielleicht mit unerwartet hohen Benutzerzahlen und Lizenzgebühren zu kämpfen. Sie fragen sich vielleicht, wie diese neue Art der Lizenzierung funktioniert und welchen Nutzen sie Ihnen bringt. Vor allem wollen Sie sicherlich Ihr Budget einhalten und Kosten sparen, wo immer möglich. Das verstehen wir und wir möchten Ihnen dabei helfen!
Wir erklären Ihnen, wie Sie häufige Konfigurationsprobleme lösen können, die dazu führen können, dass mehr Benutzer gezählt werden als nötig, und wie Sie überflüssige oder ungenutzte Konten identifizieren und entfernen können, um Geld zu sparen. Es gibt auch einige Ansätze, die zu unnötigen Ausgaben führen können, z. B. wenn ein Personendokument anstelle eines Mail-Ins für geteilte Mailboxen verwendet wird. Wir zeigen Ihnen solche Fälle und deren Lösungen. Und natürlich erklären wir Ihnen das neue Lizenzmodell.
Nehmen Sie an diesem Webinar teil, bei dem HCL-Ambassador Marc Thomas und Gastredner Franz Walder Ihnen diese neue Welt näherbringen. Es vermittelt Ihnen die Tools und das Know-how, um den Überblick zu bewahren. Sie werden in der Lage sein, Ihre Kosten durch eine optimierte Domino-Konfiguration zu reduzieren und auch in Zukunft gering zu halten.
Diese Themen werden behandelt
- Reduzierung der Lizenzkosten durch Auffinden und Beheben von Fehlkonfigurationen und überflüssigen Konten
- Wie funktionieren CCB- und CCX-Lizenzen wirklich?
- Verstehen des DLAU-Tools und wie man es am besten nutzt
- Tipps für häufige Problembereiche, wie z. B. Team-Postfächer, Funktions-/Testbenutzer usw.
- Praxisbeispiele und Best Practices zum sofortigen Umsetzen
Introduction of Cybersecurity with OSS at Code Europe 2024Hiroshi SHIBATA
I develop the Ruby programming language, RubyGems, and Bundler, which are package managers for Ruby. Today, I will introduce how to enhance the security of your application using open-source software (OSS) examples from Ruby and RubyGems.
The first topic is CVE (Common Vulnerabilities and Exposures). I have published CVEs many times. But what exactly is a CVE? I'll provide a basic understanding of CVEs and explain how to detect and handle vulnerabilities in OSS.
Next, let's discuss package managers. Package managers play a critical role in the OSS ecosystem. I'll explain how to manage library dependencies in your application.
I'll share insights into how the Ruby and RubyGems core team works to keep our ecosystem safe. By the end of this talk, you'll have a better understanding of how to safeguard your code.
Your One-Stop Shop for Python Success: Top 10 US Python Development Providersakankshawande
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Ocean lotus Threat actors project by John Sitima 2024 (1).pptxSitimaJohn
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How to Get CNIC Information System with Paksim Ga.pptxdanishmna97
Pakdata Cf is a groundbreaking system designed to streamline and facilitate access to CNIC information. This innovative platform leverages advanced technology to provide users with efficient and secure access to their CNIC details.
In the rapidly evolving landscape of technologies, XML continues to play a vital role in structuring, storing, and transporting data across diverse systems. The recent advancements in artificial intelligence (AI) present new methodologies for enhancing XML development workflows, introducing efficiency, automation, and intelligent capabilities. This presentation will outline the scope and perspective of utilizing AI in XML development. The potential benefits and the possible pitfalls will be highlighted, providing a balanced view of the subject.
We will explore the capabilities of AI in understanding XML markup languages and autonomously creating structured XML content. Additionally, we will examine the capacity of AI to enrich plain text with appropriate XML markup. Practical examples and methodological guidelines will be provided to elucidate how AI can be effectively prompted to interpret and generate accurate XML markup.
Further emphasis will be placed on the role of AI in developing XSLT, or schemas such as XSD and Schematron. We will address the techniques and strategies adopted to create prompts for generating code, explaining code, or refactoring the code, and the results achieved.
The discussion will extend to how AI can be used to transform XML content. In particular, the focus will be on the use of AI XPath extension functions in XSLT, Schematron, Schematron Quick Fixes, or for XML content refactoring.
The presentation aims to deliver a comprehensive overview of AI usage in XML development, providing attendees with the necessary knowledge to make informed decisions. Whether you’re at the early stages of adopting AI or considering integrating it in advanced XML development, this presentation will cover all levels of expertise.
By highlighting the potential advantages and challenges of integrating AI with XML development tools and languages, the presentation seeks to inspire thoughtful conversation around the future of XML development. We’ll not only delve into the technical aspects of AI-powered XML development but also discuss practical implications and possible future directions.
5th LF Energy Power Grid Model Meet-up SlidesDanBrown980551
5th Power Grid Model Meet-up
It is with great pleasure that we extend to you an invitation to the 5th Power Grid Model Meet-up, scheduled for 6th June 2024. This event will adopt a hybrid format, allowing participants to join us either through an online Mircosoft Teams session or in person at TU/e located at Den Dolech 2, Eindhoven, Netherlands. The meet-up will be hosted by Eindhoven University of Technology (TU/e), a research university specializing in engineering science & technology.
Power Grid Model
The global energy transition is placing new and unprecedented demands on Distribution System Operators (DSOs). Alongside upgrades to grid capacity, processes such as digitization, capacity optimization, and congestion management are becoming vital for delivering reliable services.
Power Grid Model is an open source project from Linux Foundation Energy and provides a calculation engine that is increasingly essential for DSOs. It offers a standards-based foundation enabling real-time power systems analysis, simulations of electrical power grids, and sophisticated what-if analysis. In addition, it enables in-depth studies and analysis of the electrical power grid’s behavior and performance. This comprehensive model incorporates essential factors such as power generation capacity, electrical losses, voltage levels, power flows, and system stability.
Power Grid Model is currently being applied in a wide variety of use cases, including grid planning, expansion, reliability, and congestion studies. It can also help in analyzing the impact of renewable energy integration, assessing the effects of disturbances or faults, and developing strategies for grid control and optimization.
What to expect
For the upcoming meetup we are organizing, we have an exciting lineup of activities planned:
-Insightful presentations covering two practical applications of the Power Grid Model.
-An update on the latest advancements in Power Grid -Model technology during the first and second quarters of 2024.
-An interactive brainstorming session to discuss and propose new feature requests.
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Skybuffer SAM4U tool for SAP license adoptionTatiana Kojar
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UiPath Test Automation using UiPath Test Suite series, part 6DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 6. In this session, we will cover Test Automation with generative AI and Open AI.
UiPath Test Automation with generative AI and Open AI webinar offers an in-depth exploration of leveraging cutting-edge technologies for test automation within the UiPath platform. Attendees will delve into the integration of generative AI, a test automation solution, with Open AI advanced natural language processing capabilities.
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What will you get from this session?
1. Insights into integrating generative AI.
2. Understanding how this integration enhances test automation within the UiPath platform
3. Practical demonstrations
4. Exploration of real-world use cases illustrating the benefits of AI-driven test automation for UiPath
Topics covered:
What is generative AI
Test Automation with generative AI and Open AI.
UiPath integration with generative AI
Speaker:
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
Digital Marketing Trends in 2024 | Guide for Staying AheadWask
https://www.wask.co/ebooks/digital-marketing-trends-in-2024
Feeling lost in the digital marketing whirlwind of 2024? Technology is changing, consumer habits are evolving, and staying ahead of the curve feels like a never-ending pursuit. This e-book is your compass. Dive into actionable insights to handle the complexities of modern marketing. From hyper-personalization to the power of user-generated content, learn how to build long-term relationships with your audience and unlock the secrets to success in the ever-shifting digital landscape.
Salesforce Integration for Bonterra Impact Management (fka Social Solutions A...Jeffrey Haguewood
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This video focuses on integration of Salesforce with Bonterra Impact Management.
Interested in deploying an integration with Salesforce for Bonterra Impact Management? Contact us at sales@sidekicksolutionsllc.com to discuss next steps.
Project Management Semester Long Project - Acuityjpupo2018
Acuity is an innovative learning app designed to transform the way you engage with knowledge. Powered by AI technology, Acuity takes complex topics and distills them into concise, interactive summaries that are easy to read & understand. Whether you're exploring the depths of quantum mechanics or seeking insight into historical events, Acuity provides the key information you need without the burden of lengthy texts.
Threats to mobile devices are more prevalent and increasing in scope and complexity. Users of mobile devices desire to take full advantage of the features
available on those devices, but many of the features provide convenience and capability but sacrifice security. This best practices guide outlines steps the users can take to better protect personal devices and information.
1. Characterization of electrical properties of Mg(Zn)SnN2 films
ABSTRACT
The fast growth of the semiconductor industry together with environmental pollution and lack of clean energy created binding demands upon new materials. MgSnN2 is reported as still unexplored with accurate
electrical properties consisting of earth-abundant highly recyclable elements. Based on previous experiments with the narrow bandgap semiconductor ZnSnN2, series of samples of crystalline thin films MgSnN2
were deposited using magnetron sputtering at room temperature. Measuring electrical properties by the four-probe method and Hall effect confirmed, that samples exhibit semiconducting properties. MgSnN2
with a rocksalt structure is expected to make an analog to GaN, and with its wide bandgap (above 2 eV) can provide new alternatives for LEDs and other optoelectronic devices.
INTRODUCTION
The depleting of mineral reserves, deteriorating of the natural environment and
the need to generate more and more electricity has led to an active search for
alternatives in energy production. Reducing carbon dioxide (CO2) emissions is at
the main aspect of the world’s transition from fossil fuels towards renewable
forms of energy. This encourages researchers to the intensive study of
photovoltaic converters with good efficiency, non-toxicity, and earth-abundant
materials that are easily recyclable and can be synthesized through a scalable
process [1].
ECONOMICAL BENEFITS OF USING SOLAR ENERGY
An important aspect of choosing elements to use for further manufacturing is
costs. Figure 9 shows the relative price of Ga, Sn, and Mg, were clearly
demonstrated Ga being more expensive than [6].
Considering electrical properties research in Granta Edupack showed that
although the resistivity of nitrides is higher, but comparing to Germanium or
Gallium price is more than twice lower. Other generated graphs in the same
software showed a decreased CO2 footprint.
Overall, solar energy is rapidly reaching the market. The cost of manufacturing
solar panels has fallen sharply. Comparing to other renewables, solar energy use
is increasing (Fig. 10), moreover research is becoming more rapid (Fig. 11).
If there is one product that can outperform crystalline silicon solar panels, it is a
thin-film module. The percentage of its use fall due to the high cost and toxity.
Therefore, the invention and application of new materials is necessary for
market development.
Moreover, ternary nitrides, have been reported to be p-doped (unlike III-V). This
capability of semiconductors together with other unique characteristics are
important and can replace their predecessors.
From the literature study, few variations of lattice constants and bandgaps,
which are decisive in controlling electronic properties important to devices were
distinguished:
Because MgSnN2 has not been previously synthesized, the growth of the
samples was based on previous knowledge obtained by growing ZnSnN2 by
magnetron sputtering. The percentage of Mg/Sn elements was changed for
completeness of the study, as well as the substrate (silicon and glass).
After applying 100 oC a shift of resistance happens. In a semiconductor, in certain temperature ranges, the conductivity increases rapidly with increasing temperature. When
reaching a particular temperature the conductivity begins to decrease again just as in metals. In addition, at lower temperatures, carriers move slowly, so they have more
time for interacting with charged impurities. At the same time, with increasing temperature, vibration in the lattice structure changes the energy of electrons. Overall
measurements showed that samples behave as semiconductors.
By the Hall effect, we can determine not only resistance but also the conductivity type, carrier concentration, and mobility. Results of the study of electrical properties by
Hall effect using contacts can be slightly different, as explained by The van der Pauw Method [5]. In-Sn contact was placed on the very corners (to avoid electricity loss) of the
same samples. Performing of new measurements showed decreasing of resistivity even more (final Table 3 and Fig. 7)
0.00E+00
1.00E+01
2.00E+01
3.00E+01
4.00E+01
5.00E+01
6.00E+01
7.00E+01
0.58337
0.56275
0.54165
0.53565
0.51809
0.5055
0.48189
0.47869
0.4663
0.45683
0.45561
Resistivity
ratio Mg/Sn
0.00E+00
1.00E-01
2.00E-01
3.00E-01
4.00E-01
5.00E-01
6.00E-01
7.00E-01
0.5055 0.48189 0.47869 0.4663 0.45683 0.45561
Resistivity
ratio Mg/Sn
resistivity without contact
resistivity with contact
resistivity 4 point probe
Sample
Thickness,
mkm
ratio
Mg/Sn
ρ (Hall)
ρ (Hall)
with contact
ρ (4-point-
probe)
Hall coef.
Hall coef. with
contact
MSN-29 1.77 0.58337 6.63E+01 3.33E+01 3.09E+01 -2.27E+02 -2.52E+00
MSN-30 1.74 0.56275 4.40E+01 2.31E+01 1.14E+01 6.48E+02 -1.54E+00
MSN-31 1.77 0.54165 1.24E+01 7.31E+00 2.99E+00 1.24 -4.27E-01
MSN-32 1.84 0.53565 5.45E+00 2.98E+00 1.34E+00 -1.97 -2.18E-01
MSN-33 1.85 0.51809 2.29E+00 1.19E+00 7.80E-01 -4.15E-01 -3.97E-02
MSN-34 1.84 0.5055 5.10E-01 5.88E-01 3.51E-01 -3.39E-02 -1.80E-01
MSN-35 1.86 0.48189 2.56E-01 3.43E-01 2.56E-01 -1.60E-02 -4.81E-02
MSN-36 1.91 0.47869 1.96E-01 2.42E-01 2.05E-01 -3.51E-02 -5.78E-02
MSN-37 1.95 0.4663 1.18E-01 1.90E-01 1.54E-01 -1.68E-02 -1.84E-01
MSN-38 1.96 0.45683 9.85E-02 1.18E-01 1.07E-01 -1.57E-02 -3.97E-02
MSN-39 1.96 0.45561 7.93E-02 9.58E-02 9.67E-02 -2.07E-02 -3.76E-02
ELECTRON MICROSCOPY RESULTS
The best first way to examine thin-film samples is electron microscopy. It is more profitable to begin with scanning microscopy analysis, which will provide information about
the structure of the samples and will give a clear picture of the surface [18]. It is assumed that the selected samples have different concentrations of elements, which may
affect the grain size and distance between them, as well as the orientation.
As expected from the comparisons of the results of measuring the characteristics of samples grain size increased slightly with nitrogen flow respectively. At the same time,
the percentage of oxygen decreased depending on N%.
6
8
10
12
14
O%
Sample N at% O at% Mg at% Sn at% raitio Mg/Sn
MSN-29 44.4 10.1 26.5 18.9 0.58
MSN-30 43.1 12.1 25.2 19.5 0.56
MSN-31 44.4 11.2 24.1 20.3 0.54
MSN-32 46.6 9.5 23.5 20.4 0.53
MSN-33 45.7 9.6 23.2 21.5 0.52
MSN-34 47.2 7.3 22.9 22.5 0.50
MSN-35 47.2 8.1 21.6 23.2 0.48
MSN-36 47.1 7.9 21.5 23.4 0.48
MSN-37 47.3 7.7 21.0 24.0 0.47
MSN-38 48.7 6.8 20.3 24.2 0.46
MSN-39 48.3 6.6 20.5 24.5 0.46
Mines Nancy
Département Matériaux
Program: Multiscale materials
Research project in 3A of Mines
Nancy
ECTS: 8
Project report completed by
Nelia Zaiats
Supervisors: Jean-François Pierson, Fahad Alnjiman, Agathe Virfeu
Date: 25/01/2021
GROWTH METHODS
In work [2] successful growth of material by chemical vapor
deposition is described. The same type of films was made by
molecular beam epitaxy in work [3]. As can be seen from
parameters, lattice constant measured along work [3] is higher than
in [2], which theoretically gives better conductivity due to tightly
bound of electrons to the atom.
Figure 2 - Changes in concentrations of oxygen
Table 2 – Concentration of elements
Figure 1.1 – Surface pictures MSN-29
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R,
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MSN-29 SECOND HEATING
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MSN-29 SECOND COOLING
Table 3– Measurements results
Figure 3-6 – some of 4-probes results and its Arrhenius plots for MSN-29
Figure 7 – Measurements results
• From SEM results we can see that with increasing nitrogen concentration, the
grain size escalates, and the oxidation level decreases.
• Conductivity increases with temperature, which indicates the characteristics
of semiconductors. The resistivity, as well as deformation, decreased with
increasing amounts of nitrogen.
• The main charge carriers of samples MSN30-31 are holes, for samples №32-
39 electrons. Contacts placed samples help to perform better conductivity.
• The market analysis indicates the growing popularity and importance of new
developments in solar energy, and solar energy is expected to become the
most prominent power source by 2050.
Figure 8 – Price on the resistance of semiconductor
materials (based on GRANTA 2020) [7]
Figure 9 – The price changes of Mg, Sn
comparing to Ga from 2000 to 2016 [6]
Figure 10 – Recent trends in the use of solar
energy [2]
Figure 11 – Trends in the development of patents for
renewable energy sources [2]
CONCLUSIONS
• The choice of nitride-based alloys in comparison
with other semiconductor materials is
substantiated.
• Magnetron sputtering was chosen as the most
profitable method to achieve good quality
samples.
ELECTRICAL PROPERTIES MEASUREMENTS
In semiconductors at room temperature, the size of the bandgap decreases, the material receives enough thermal energy so that the electrons can
easily jump over the bandgap and make transitions to the conduction band. By performing the 4-point-probe method of measuring electrical
characteristics the resistance and resistivity from there respectively of the sample can be calculated.
Calculated for rectangular samples with different thickness correction factor C = 4.2209. Graphs were transferred to Arrhenius plot in order to
calculate activation energy. For MSN29 Ea=0.06-0.19eV, for MSN30 Ea= 0.063-0.135eV, for MSN31 Ea=0.067-0.083 eV, depending on temperature.
ZnSnN2 = InGaN
MgSnN2 = GaN
ZnSnN2
MgSnN2
GROUP OF MATERIALS AND ASSUMPTION
Unlike monocrystalline and polycrystalline solar panels, thin
films сan be made of various materials, also in a form of
alloys – a promising structure for use in PV due to unique
characteristics and a large selection of components.
Theoretical
direct bandgap
3.43eV
lattice constants:
a = 6.905Å,
b = 5.932Å,
c = 5.499Å
Experimental #1 [5]
direct bandgap
2.57 eV - 3.325 eV,
lattice constants:
a = 5.746-5.932Å,
b = 6.712-6.905Å,
c = 5.313-5.499Å
Experimental #2 [6]
direct bandgap
2.3 eV,
lattice constant
a=4.4832Å
MOCVD MSE MBE
CVD PVD PVD
Toxic elements, require experience Metals and inert gases Metals and inert gases
Up to atmospheric pressure Ultra-high vacuum Ultra-high vacuum
Close to thermodynamic
equilibrium
Can grow thermodynamically
forbidden materials
Can grow thermodynamically
forbidden materials
Thickness can be few nanometers Can cover sharp interfaces Can cover sharp interfaces,
monolayer thickness
Suitable for mass production Suitable for large-scale production Limited for lab research
The high temperature required
(>1000 oC)
T up to 700 oC, possible to grow
high-quality film in room T
T up to 800 oC
Table 1– Comparison of described in literature growth methods for MgSnN2
REFERENCES
[1] F. Alnjiman, “Chemical environment and functional properties of highly crystalline ZnSnN2 thin films deposited by reactive sputtering at
room temperature,” Solar Energy Materials and Solar Cells 182, 30–36, 2018. DOI: 10.1016/j.solmat.2018.02.037
[2] F. Kawamura, "Synthesis of a Novel Rocksalt-Type Ternary Nitride Semiconductor MgSnN," EurJic: European Journal of Inorganic
Chemistry, pp. 446-451, 2020.
[3] K. R. York, "MgSnN2: A New Eco-Friendly Wide Band Gap Semiconductor," Western Michigan University, 2018.
[4] J.F. Pierson, “Materials Characterization,” Course lectures FICM 3A – Multiscale Materials, Lorraine University, 2020
[5] M. Cornils, "How to Extract the Sheet Resistance and Hall Mobility From Arbitrarily Shaped Planar Four-Terminal Devices With Extended
Contacts," IEEE Transactions on Electron Devices, vol. 57, pp. 2087 - 2097, 12 July 2010.
[6] U. S. Geological Survey, “MINERAL COMMODITY SUMMARIES 2017,” 2017.
DOI: 10.3133/70180197
[7] CES Edupack 2016. Cambridge: Granta, 2017
[8] IRENA, "IRENA - International Renewable Energy Agency," 2005-2020. [Online].
Figure 1.2 – Surface pictures MSN-34 Figure 1.3 – Surface pictures MSN-39
7.00
7.50
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lnR
1/T , K^-1
MSN-29 FIRST HEATING
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8.00
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9.00
ln
R
1/T , K^-1
MSN-29 FIRST COOLING
8.40
8.60
8.80
9.00
9.20
9.40
lnR
1/T, K^-1
MSN-29 SECOND HEATING
8.30
8.40
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8.70
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1/T, K^-1
MSN-29 SECOND COOLING
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MSN-29 FIRST COOLING