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Minimization of the grain boundary resistance in YSZ thin films
- 1. Minimization of the grain boundary resistance in YSZ thin films through substrate-induced Mg2+ doping Edmund Mills M. Kleine-Boymann, J. Janek, H. Yang, N. Browning, Y. Takamura, S. Kim
- 2. Minimization of the grain boundary resistance in YSZ thin films 2 Conductivity enhancement in thin films Jun Jiang & Joshua L. Hertz, J Electroceram (2014) 32:37–46 YSZ thin films at 500oC
- 3. Minimization of the grain boundary resistance in YSZ thin films 3 Conductivity enhancement in thin films YSZ thin films at 500oC Jun Jiang & Joshua L. Hertz, J Electroceram (2014) 32:37–46 C. Korte, N. Schichtel, D. Hesse, & J. Janek, Monatsh Chem (2009) 140:1069–1080
- 4. Minimization of the grain boundary resistance in YSZ thin films 4 Thin film conductivity enhancement
- 5. Minimization of the grain boundary resistance in YSZ thin films 5 Nano-columnar grain structure TEM reveals nanocrystalline columnar grains with an average diameter of 8.1nm MgO YSZ 20 nm
- 6. Minimization of the grain boundary resistance in YSZ thin films 6 Thin film conductivity enhancement
- 7. Minimization of the grain boundary resistance in YSZ thin films 7 Interfacial conductivity model s = fsiT-1 exp -Ei kT é ëê ù ûú Interfacial +(1- f )sGBT-1 exp -EGB kT é ëê ù ûú Bulk f = d d where L δ Ri RGB l d
- 8. Minimization of the grain boundary resistance in YSZ thin films 8 Interfacial conductivity model s = fsiT-1 exp -Ei kT é ëê ù ûú Interfacial +(1- f )sGBT-1 exp -EGB kT é ëê ù ûú Bulk f = d d where L δ Ri RGB l d
- 9. Minimization of the grain boundary resistance in YSZ thin films 9 Hypothesis: Diffusion of Mg2+ into the film MgO YSZ Reduced GB resistance near interface Grain Boundary Diffusion of Mg2+ We hypothesize that Mg2+ has diffused into the films, reducing the GB resistance near the interface
- 10. Minimization of the grain boundary resistance in YSZ thin films 10 Reduced space-charge potential in metal doped Ce0.99Gd0.01O2-x H.J. Avila-Paredes & S. Kim, Solid State Ionics 177 (2006) 3075–3080 Metal dopants segregate to the grain boundaries, reducing the space-charge potential and grain boundary resistivity
- 11. Minimization of the grain boundary resistance in YSZ thin films 11 Substrate-induced Mg2+ doping of ceria thin films S. J. Litzelman, R. A. De Souza, B. Butz, H. L. Tuller, M. Martin & D. Gerthsen, J Electroceram (2009) 22:405–415 Mg2+ diffuses from the substrate into the film, reducing the space-charge potential
- 12. Minimization of the grain boundary resistance in YSZ thin films 12 Verification of hypothesis: SIMS
- 13. Minimization of the grain boundary resistance in YSZ thin films 13 Verification of hypothesis: SIMS 0 10 20 30 40 50 10-3 10-2 10-1 100 Interfaceregion YSZ thin film Deposited at 25°C Zr+ Mg+ Deposited at 700°C Mg + Zr + normalizedtomaximumintensity Depth (nm) MgO substrate
- 14. Minimization of the grain boundary resistance in YSZ thin films 14 Mg2+ diffusion 0 10 20 30 40 50 10-3 10-2 10-1 100 Interfaceregion YSZ thin film Deposited at 25°C Zr+ Mg+ Deposited at 700°C Mg + Zr + normalizedtomaximumintensity Depth (nm) MgO substrate Mg2+ diffuses into the grain boundaries from the substrate MgO YSZ
- 15. Minimization of the grain boundary resistance in YSZ thin films 15 Mg2+ diffusion 0 10 20 30 40 50 10-3 10-2 10-1 100 Interfaceregion YSZ thin film Deposited at 25°C Zr+ Mg+ Deposited at 700°C Mg + Zr + normalizedtomaximumintensity Depth (nm) MgO substrate Mg2+ diffuses into the grain boundaries from the substrate Mg2+ diffuses up the film walls to the film surface
- 16. Minimization of the grain boundary resistance in YSZ thin films 16 Mg2+ diffusion 0 10 20 30 40 50 10-3 10-2 10-1 100 Interfaceregion YSZ thin film Deposited at 25°C Zr+ Mg+ Deposited at 700°C Mg + Zr + normalizedtomaximumintensity Depth (nm) MgO substrate Mg2+ diffuses into the grain boundaries from the substrate Mg2+ diffuses up the film walls to the film surface
- 17. Minimization of the grain boundary resistance in YSZ thin films 17 Mg2+ diffusion 0 10 20 30 40 50 10-3 10-2 10-1 100 Interfaceregion YSZ thin film Deposited at 25°C Zr+ Mg+ Deposited at 700°C Mg + Zr + normalizedtomaximumintensity Depth (nm) MgO substrate 4.0 nm 3.8 nm Mg2+ diffuses into the grain boundaries from the substrate Mg2+ diffuses up the film walls to the film surface Creates layers of enhanced conductivity, with combined thickness close to δ (7.6 nm).
- 18. Minimization of the grain boundary resistance in YSZ thin films 18 Mg2+ diffusion 0 10 20 30 40 50 10-3 10-2 10-1 100 Interfaceregion YSZ thin film Deposited at 25°C Zr+ Mg+ Deposited at 700°C Mg + Zr + normalizedtomaximumintensity Depth (nm) MgO substrate 4.0 nm 3.8 nm Mg2+ diffuses into the grain boundaries from the substrate Mg2+ diffuses up the film walls to the film surface Creates layers of enhanced conductivity, with combined thickness close to δ (7.6 nm).
- 19. Minimization of the grain boundary resistance in YSZ thin films 19 Summary Nano-columnar YSZ thin films Thinner films show enhanced conductivity Near that of single-crystal YSZ for films less than 10 nm thick Interfacial layer model gives 7.6 nm conductive layer thickness Mg2+ diffusion into grain boundaries from substrate and film surface Total thickness matches that determined by interfacial layer model Grain boundary resistance is nearly eliminated by Mg2+
- 20. Minimization of the grain boundary resistance in YSZ thin films 20 Collaborators Funding Acknowledgements N. Browning H. Yang J. Janek M. Kleine-Boymann Y. Takamura S. Kim
- 21. Minimization of the grain boundary resistance in YSZ thin films 21 Si surface diffusion along GaN:Ge NWs Schormänn et al. J. Appl. Phys. 114, 103505 (2013)