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light detector fabrication and cal .pdf
- 1. Associate Prof. Dr.Naser Mahmoud Ahmed Nas_tiji@yahoo.com Naser.Mahmoud@duc.edu.iq Malaysia: 0060125512848 Iraq: 009647869348955 7/2/2025 الكاشف تصنيع خطوات الضوئي
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- 3. Fabrication UV-Photodetector Roadmap SiliconCutting Cleaning Step -1 Step -4 Step -2 Step -3 Porous Silicon process Chemicals Power Supply Electrod e Light source Metal electrode process Ag thin film Deposition Apply silver paste I-V Testing Test the Psi emission Photo current - Time Testing Calculating UV-Photodetector parameters Before and After silver nanowires Step -5 Enhancement process Spray Silver nanowires I-V Testing Photo current - Time Testing
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- 6. SILICON WAFER there aremany reasons why we prefer silicon rather than germanium is 1. it is cheaper. 2. silicon is the form of silicon dioxide which is available. 3. it cannot be triggered by small noise voltages. Why silicon is most used as semiconductor?
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- 8. Typical Sizes ofsilicon Wafers 1 inch or 25mm 2 inch or 50mm 3 inch or 75mm 4 inch or 100mm 5 inch or 125mm 6 inch or 150mm 8 inch or 200mm 12 inch or 300mm
- 9. How to distinguish betweensilicon wafer <100> and <111>
- 10. Orientation/identification flats Primary flat– The flat of longest length located in the circumference of the wafer. The primary flat has a specific crystal orientation relative to the wafer surface; major flat. Secondary flat – Indicates the crystal orientation and doping of the wafer.
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- 12. Silicon parameters 1-Silicon type 2-Siliconorientation 3-Silicon resistivity n-TYPE 100 or 111 0.01-10 Ω.cm
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- 16. Silicon Cleaning Process RCAWAFER CLEAN Radio Cooperation America (RCA) Standard for removing contaminants from wafers
- 17. chemicals and supplies HydrochloricAcid (HCL) Hydrogen Peroxide (H2O2) Ammonium Hydroxide (NH4OH) DI Water (H2O) Hydrofluoric acid (HF)
- 18. RCA Cleaning procedure has 3 major steps ORGANICCLEAN : remove silica and silicon particles from the wafer, as well as remove certain organic and metal surface contamination OXIDE STRIP : remove the native oxide layer and any contamination in the oxide from the wafer surface IONIC CLEAN : remove certain ionic and metal surface contamination.
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- 20. SOLUTION① ORGANIC CLEAN H2O / NH4OH/ H2O2 ( 50 : 10 : 10) Solution 1 will put in the containers with high purity of silica (glass)
- 21. SOLUTION ② OXIDE STRIP HF /H2O (1 : 50) Solution ② will put in the containers polypropylen with high purity (plastic)
- 22. H2O /HCL / H2O2 (60 : 10 : 10 ) Solution ③ will put in the containers with high purity of silica (glass) IONIC CLEAN Solution ③
- 23. i • Using hotplate. ii • Put container that containing solution ① with thermometer on hot plate until temperature at 75◦C . iii • Put the wafer/samples into solution ① and make sure the temperature does not go up more than 80◦C PROCEDURE
- 24. PROCEDURE iv • Let itfor 10 minutes and then take away wafer/samples and wash it with deionised water. v • Then, put the wafer/samples into solution ② for 10-20 seconds. vi • Take away the wafer/samples from solution ② and wash it with deionised water.
- 25. . PROCEDURE vii • Put solution③ onto hot plate until temperature become 75◦C. viii • Then put the samples into solution ③ that was heated for 10 minutes. ix • Take away and immerse the wafer/ samples into deionised water around 5 minutes.
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- 27. Metal –Semiconductor –Metal Photodetector M M S MSM
- 28. Fabrication UV-Photodetector Roadmap SiliconCutting Cleaning Step -1 Step -4 Step -2 Step -3 Porous Silicon process Chemicals Power Supply Electrode Light source Metal electrode process Ag thin film Deposition Apply silver paste I-V Testing Test the Psi emission Photo current - Time Testing Calculating UV-Photodetector parameters Before and After silver nanowires Step -5 Enhancement process Spray Silver nanowires I-V Testing Photo current - Time Testing
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- 30. Psi-Chemicals DI-Water HF Ethanol 1:1 Fluoric acid, Hydrogenfluoride, Fluoride of hydrogen
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- 35. Silver paste , Silverthin film Metal contact
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- 43. Video-9 porous siliconformation
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- 45. Technical Notes 1- Don'ttouch the silicon surface by your fingers. keep it clean 2- Be very carefully from the HF acid and should wearing the safety clothes 3- Don’t dip the crocodile clamp touch the solution during conducting the experiment 4- connecte the silicon sample very well 5- always clean the tungsten wire using sand paper.
- 46. Technical Notes 9-Before testthe silicon try to clean the sample using DI Water and dry the sample using hair dryer 6-Don’t let the crocodile clamp terminals touch each other during the power supply functioning 7- Increase the voltage slowly to avoid flowing high current inside the solution 8- Fix the time properly to get same results
- 47. Go for TestingYour Samples POROUS SILICON EMISSION POROUS SILICON INSIDE THE WATER FESEM UV-VIS XRD AFM
- 49. I-V CHARACTRISTIC Go forTesting Your Samples PHOTO-CURRENT – TIME CHARACTRISTIC
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- 52. + Spectral Response POWER OFSPECTRAL WAVELENGTH & PHOTO-CURRENT OF SPECTRAL WAVELENGH
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- 66. Parameters Photodetector: Responsivity(R), Sensitivity (S), Quantum Efficiency (η) , Gain (G), Detectivity (D*), and Noise Equivalent Power (NEP) were calculated using: 𝑹 = 𝑰𝒑𝒉 𝑷 𝜼 = 𝑹 𝒉𝒄 𝝀𝒆 𝑺 = 𝑰𝒑𝒉 − 𝑰𝒅𝒂𝒓𝒌 𝑰𝒅𝒂𝒓𝒌 ⨯ 100% 𝑮 = 𝑰𝒑𝒉 𝑰𝒅𝒂𝒓𝒌 𝑫∗ = 𝑹2𝑨 2 𝒆𝑰𝒅𝒂𝒓𝒌 𝑵𝑬𝑷 = 𝑨𝒐 𝑫∗ (1) (2) (3) (4) (5) (6) Where Iph, Idark, A, P, e, h, c and λ are the photo- and dark- current, effective area, incident light power per unit area, electronic charge, Planck constant, Light speed, and wavelength of incident radiation.
- 67. Where Photo anddark current from the I-T graph Iph= 0.02 A, Id=79.6 µA, 7.96×10-5 A Effective area for this sample A = 1 cm2 =0.0001 m2 , The charge of an electron is constant e =1.6×10-19 C Incident light power was measure for applied UV 385 nm P = 402 µWatt which is P = 0.000402 Watt, Planck constant h= 6.67×10-34 J.S , light speed c = 3×108 m/s , and wavelength λ = 385 nm which 385×10-9 m
- 68. Iph= 0.02 A,Id= 7.96×10-5 A A = 1 cm2 =0.0001 m2 , e =1.6×10-19 C P = 0.000402 Watt, h = 6.67×10-34 J.S , c = 3×108 m/s , λ = 385×10-9 m To calculate the responsivity: 𝑹 = 𝑰𝒑𝒉 𝑷 𝑹 = 0.02 0.000402 = 49.75 A/W 𝑺 = 𝑰𝒑𝒉 − 𝑰𝒅𝒂𝒓𝒌 𝑰𝒅𝒂𝒓𝒌 ⨯ 100% 𝑺 = 𝟎. 𝟎𝟐 − 7.96×10−5 7.96×10−5 ⨯ 100% = 25000 To calculate the sensitivity:
- 69. To calculate theQuantum efficiency: 𝜼 = 𝑹 𝒉𝒄 𝝀𝒆 𝜼 = 𝟒𝟗. 𝟕𝟓 × (6.67×10−34×𝟑×108) (385×10−9 ×1.6×10−19) = 161.610 To calculate the gain: 𝑮 = 𝑰𝒑𝒉 𝑰𝒅𝒂𝒓𝒌 𝑮 = 𝟎.𝟎𝟐 7.96×10−5 = 251.256
- 70. To calculate thedetectivity : 𝑫∗ = 𝑹2𝑨 2 𝒆𝑰𝒅𝒂𝒓𝒌 𝑫∗ = R 𝑨 2 𝒆𝑰𝒅𝒂𝒓𝒌 𝑫∗ = 49.75 𝟎. 𝟎𝟎𝟎𝟏 2×1.6×10−19×7.96×10−5 𝑫∗ = 9.86×1010 Jones
- 71. To calculate theNoise power equivalent : 𝑵𝑬𝑷 = 𝑨𝒐 𝑫∗ 𝑵𝑬𝑷 = 0.0001 9.86×1010 𝑵𝑬𝑷 = 10.1×10−13 Watt
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