Engineering

2. GHANA TECHNOLOGY UNIVERSITY COLLEGE (GTUC)
PROGRAMME: MASTERS IN TELECOMs ENGINEERING - MTE
TITLE COURSE: RF & MICROWAVE COMMUNICATION
(COMPONENTS & DEVICES)
COURSE CODE: MTE 508
LECTURER: DR. D.M.O. ADJIN
HEAD/FACULTY OF ENGINEERING
E-MAIL: dadjin@gtuc.edu.gh
MOBILE: ++233 20 2698 175
© JANUARY 2016

3.  COURSE OBJECTIVES
• This Course Presents The Fundamental Knowledge & Skills In The
Theory, Design & Implementation Of RF & Microwave Systems.
• Upon completion of this course, Students Will Be Able To
Understand:
• The Basics Of Microwave Engineering;
• Key Aspects Of Microwave Circuits, TX’ssion Lines, Antennas &
Propagation Of Radio Waves;
• The Techniques To Solve Real Problems In Microwave System
Design & Implementation.

4. TABLE OF CONTENTS
 CHAPTER ONE: OVERVIEW OF RF AND MICROWAVE TECHNOLOGY
• Development history of RF & microwave Technology,
• Microwave components & devices: active & passive devices.
CHAPTER TWO: MICROWAVE DIODES AND MICROWAVE BIPOLAR
TRANSISTOR
• 2.1 p-i-n Diodes, Schottky Diodes, Varactor Diodes & Tunnel Diodes
Components & Their Applications in microwave circuits.
• Bipolar Transistors & Heterojunction Bipolar Transistors Components &
• Their Applications in microwave circuits

5. CHAPTER TWO:
MICROWAVE SYSTEM COMPONENTS & DEVICES
2.1 Overview
2.2 Passive Microwave Circuits & Devices
2.3 Active Microwave Circuits & Devices
2.4 Microwave Transmission Lines
2.5 Waveguides

6.  CHAPTER THREE: MICROWAVE FIELD EFFECT TRANSISTORS
Background Knowledge In:
•FETs-JFET,
•MESFET,
•MOSFET,
•HEMT of JFET,
•MOSFET Devices & Their Applications In MW Circuits.

7. •CHAPTER FOUR: TRANSFERRED ELECTRON DEVICES AVALANCHE
TRANSIT-TIME DEVICES
•
•4.1 Gunn effect. Differential Negative Resistance,
•4.2 Two-Valley Model Theory, Microwave generation,
amplification and applications.
•
4.3 IMPATT Diodes, TRAPATT Diodes and BARITT Diodes
Components,
• Their Principles of operation, characteristics & Applications in
microwave circuits.

8.  CHAPTER FIVE: MICROWAVE TUBES
Klystrons
Travelling-Wave Tubes
Magnetrons Devices
Principles of operation and characteristics.

9. CHAPTER SIX: MICROWAVE NETWORK ANALYSIS
6.1 Transmission Line Equations & Solutions
6.2 Smith Chart
6.3 ABCD Matrix
6.4 S-Parameter Matrix
6.5 Signal Flow Graphs

10. CHAPTER SEVEN: IMPEDANCE
TRANSFORMATION AND MATCHING
7.1 Impedance Measurements
7.2
Single-stub Matching,
7.3
Double-stub Matching
7.4
Matching with Lumped Elements

11. CHAPTER EIGHT: WAVEGUIDE COMPONENTS
8.1 Rectangular Waveguide, Bends and Twists
8.2 Microwave Attenuators & Phase Shifters
8.3 Circular Polarizers
8.4 Directional Couplers
8.5 Hybrid Junctions
8.6 Ferrites
8.7 Faraday Rotation
8.8 Isolators
8.9 Circulators
8.10 Cavity Resonators
8.11 Coaxial-to-Waveguide Transitions
8.12 Microwave Switches.

12. CHAPTER NINE: COAXIAL COMPONENTS
9.1 Two-wire line
9.2 Coaxial Cables, Terminations, Connectors and
Transitions
9.3 Coaxial Attenuators:
•Phase Shifters
•Baluns.

13. CHAPTER 10: STRIPLINE CIRCUITS
10.1 Substrate Materials
10.2 Stripline, Coupled Stripline, Microstrip, Coupled Microstrip,
Coplanar Stripline
10.3 Stripline Terminations, Attenuators, Couplers, Power Dividers,
Circulators, Isolators & Resonators
• 10.4 Lowpass Filters, Bandstop Filters, Bandpass Filters, Wideband
Filters.

14. •CHAPTER ELEVEN: SOME MICROWAVE
MEASUREMENTS
•11.1 Microwave Power,
•11.2 Network: Scalar Network Analyzer, Vector
Network Analyzer, VSWR Bridge,
•11.3 Calibration Techniques,
•11.4 Time-Domain Analysis,
•11.5 IP3, Noise Measurements & Phase Noise

16. CHAPTER ONE: OVERVIEW OF RF & MICROWAVE TECHNOLOGY
 Development History of RF & Microwave Technology
Synopsis
• The Course Is Focused On The Basic Principles & Apps Of Mw Devices & Circuits
• Mw Techniques Have Been Increasingly Adopted In Such Diverse Appns As:
• Radio Astronomy,
• Long-distance Communications,
• Space Navigation,
• Radar Systems,
• Medical Equipment, &
• Missile Electronic Systems.

17. Synopsis Cont’d
•As A Result Of The Accelerating Rate Of Growth Of Mw
Technology In Research & Industry:
•Students Who Are Preparing Themselves For, &
Electronics Engineers Who Are Working In, The Mw
Area,
•Are Faced With The Need To Understand The
Theoretical, Experimental Design & Analysis Of
Microwave Devices & Circuits.

18. MICROWAVE FREQUENCIES
• The Term Mw Freqs Is Generally Used For Those Wavelengths Measured In
Centimeters, Roughly From 30 cm To 1 mm (1 To 300 Ghz).
• However, Microwave Really Indicates The Wavelengths In The Micron Ranges.
• This Means Mw Freqs Are Up To Infrared & Visible-light Regions.
• Mw Freqs Refer To Those From 1 Ghz Up To 106 Ghz.
• The Microwave Band Designation Was Derived From World War II Radar
Security Considerations.
• The IEEE recommended new microwave band designations shown Below

19. IEEE Microwave Frequency Bands

20. MICROWAVE DEVICES
• In The Late 1930s It Became Evident That As The Wavelength Approached
The Physical
• Dimensions Of The Vacuum Tubes, The Electron Transit Angle,
Interelectrode Capacitance & Inductance Appeared To Limit The Operation
Of Vacuum Tubes In Mw Freqs.
• In 1935 A. A. Heil & 0. Heil Suggested That Me Voltages Be Generated By
Using Transit-time Effects Together With Lumped Tuned Circuits.
• In 1939 W. C. Hahn And G. F. Metcalf Proposed A Theory Of Velocity
Modulation For Microwave Tubes.

21. •Four Months Later R. H. Varian And S. F. Varian Described
A Two-cavity Klystron Amplifier & Oscillator By Using
Velocity Modulation.
•In 1944 R. Kompfner Invented The Helix-type Traveling-
wave Tube (TWT).
•Ever Since Then, The Concept Of Mw Tubes Has Deviated
From That Of Conventional Vacuum Tubes;
•As A Result Of The Appn Of New Principles In The
Amplification & Generation Of Microwave Energy.

22. •Historically Mw Generation & Amplification Were
Accomplished By Means Of Velocity-modulation Theory.
•In The Past 3 Decades, However,
• Microwave Solid-state Devices-such As Tunnel Diodes, Gunn
Diodes, Transferred Electron Devices (Teds), And Avalanche
Transit-time Devices Have Been Developed To Perform These
Functions.
•The Conception & Subsequent Development Of Teds &
Avalanche Transit-time Devices Were Among The
Outstanding Technical Achievements.

23. • B. K. Ridley And T. B. Watkins In 1961 And C. Hilsum In 1962
Independently Predicted That;
• “The Transferred Electron Effect Would Occur In GaAs” (Gallium
Arsenide).
• In 1963 J. B. Gunn Reported His "Gunn Effect."
• The Common Characteristic Of All Mw Solid State Devices Is The Negative
Resistance That Can Be Used For Mw Oscillation & Amplification.
• The Progress Of Avalanche Transit-time Devices Has Been So Swift
That:
• Today, They Are Firmly Established As One Of The Most Important Classes
Of Mw Solid-state Devices.

24. • A Mw System Normally Consists Of A Transmitter Subsystem,
Including:
• A Microwave Oscillator,
• Waveguides, A Transmitting Antenna,
• And A Receiver Subsystem
• The Rx’er Subsystem Includes:
• A Receiving Antenna,
• Transmission Line Or Waveguide,
• A Microwave Amplifier, &
• A Receiver.

25. Typical Microwave Repeater / Regeneration Stations

26. •Typical Point-to-point Microwave Radio Link

27. • Typical Mw Systems

28. •In Order To Design A Mw System & Conduct A Proper Test
Of It, An Adequate Knowledge Of The Components Involved
Is Essential.
•Besides Mw Devices, This Course Thus Describes Mw
Components, Such As:
• Resonators,
• Cavities,
• Microstrip Lines, Hybrids, And
• Microwave Integrated Circuits.

29. MICROWAVE UNITS OF MEASURE
• Meter-Kilogrmn-Second (MKS) Units

30. Prefixes Applied in Microwave Measurements
• Prefixes Applied in Microwave Measurements

31. Physical Constants Applied in Microwave Systems

32. Temperature Scales Commonly Used In Scientific Work

33. MICROWAVE COMPONENTS & DEVICES: ACTIVE & PASSIVE DEVICES
•Microwave Waveguides
•
•Microwave Cavities
•Microwave Hybrid Circuits
•Directional Couplers
•Circulators & Isolators,

34. • Microwave Linear-Beam Tubes (Klystrons, Helix Traveling-
Wave Tubes (TWTs)),
• STRIP LINES: Microstrip Lines, Parallel Strip Lines,
Coplanar Strip Lines,
• Monolithic Microwave Integrated Circuits (MOSFET,
NMOS, CMOS, Hybrid Integrated-Circuit), Etc.

35. • Microwave Bipolar Transistors:
• Heterojunction Bipolar Transistors (Hbts),
• Microwave Tunnel Diodes,
• Junction Field-Effect Transistors (Jfets),
• Metal-Semiconductor Field-Effect Transistors (Mesfets),
• High Electron Mobility Transistors (Hemts),
• Metal-Oxide-Semiconductor Field-Effect Transistors (Mosfets),
• MOS Transistors & Memory Devices,
• Charge-Coupled Devices (CCDs),
• Transferred Electron Devices (Teds),
• LSA Diodes,
• Inp Diodes, CDTE Diodes,
• Avalanche Transit-Time Devices,
• IMPATI Diodes,
• TRAPATT Diodes,
• BARITT Diodes,
• Parametric Devices,

36. THE END OF CHAPTER ONE