This document summarizes a seminar discussing the potential for a Mott transistor. It describes how electrostatic carrier doping could be used to induce a Mott transition in transition metal oxides and enable new transistor designs. However, applying large electric fields to transition metal oxides typically leads to oxygen defect formation. The document proposes that coating oxide surfaces with the polymer Parylene could suppress defect formation and allow electrostatic carrier doping to be used to study quantum critical phenomena and realize Mott transistors.
Towards novel Mott FET: Concept, Present Status, and FutureIsao Inoue
This document discusses the concept, present status, and future of Mott field-effect transistors (FETs). It begins with an overview of quantum critical phenomena and how physical parameters like pressure can be used to study quantum critical points. The document then discusses how electrostatic carrier doping could provide a randomness-free method to study quantum critical phenomena. It proposes that a Mott FET, which uses electrostatic doping to control electronic states near a quantum critical point, could enable such studies. The rest of the document discusses the basics of electrostatic field effects and how a Mott FET could overcome limitations of conventional MOSFETs for continued device miniaturization. It introduces the concept of Mott insulators and how
History of ald riikka puurunen 15.11.2013 finalRiikka Puurunen
Invited seminar talk by R. L. Puurunen, November 15, 2013, Beneq and ETU (LETI) joint ALD laboratory opening seminar, St. Petersburg, Russia, title: History of ALD: from lab research to industrial applications
This document discusses uranium enrichment technology and processes. It explains that uranium exists as the isotopes U-238 and U-235, with U-235 being fissile. It then describes the main types and grades of enriched uranium and the primary processes used for enrichment, including gaseous diffusion, gas centrifuges, laser separation, and other techniques like aerodynamic, electromagnetic, chemical, and plasma separation methods.
Extensive efforts have been made to harvest energy f from water in the form of raindrops, river and ocean wave, tidal and others. However, achieving a high-density of electrical power generation is challenging. Traditional hydraulic power generation mainly uses electromagnetic generators that are heavy, bulky, and become inefficient with water supply. Alternative, the water droplet or solid-based electric nano-generator, has so far generated peak power densities for less than one watt per square meter, owing to the limit at ions imposed by interfacial effects as seen in characterization of the charge generation and transfer that occur at solid-liquid or liquid-solid interfaces. Here we develop a device to harvest energy from impinging water droplet s by using an architecture that compromises a polytetrafluoroethylene film on an indium oxide substrate plus an aluminium electrode. We show that spreading of an impinged water droplet on the device bridges, the originally disconnect ed component s into a closed-loop electrical system, transforming the conventional interfacial effect into bulk effect, and so enhancing device that is limited by interfacial effects.
Photoelectrochemical characterization of titania photoanodes fabricated using...Arkansas State University
Design and fabrication of new electrodes for photo-electrolysis using a material that is photo-active, stable, corrosion resistant, and cost effective.
Presentation on energy iter2017 januaryCooper Lackay
This document provides an overview of nuclear fusion and the ITER (International Thermonuclear Experimental Reactor) project. It describes how ITER aims to demonstrate the scientific and technological feasibility of fusion power by producing 500 megawatts of power sustained for long periods using the tokamak design. Key challenges for ITER include materials issues from high heat and particle loads as well as producing tritium fuel on-site, but proposed solutions could help address these challenges. If successful, ITER will bring the world closer to developing fusion as a safe, clean, and virtually limitless source of energy.
Piezoelectricity is the ability of certain materials to generate an electric charge in response to applied mechanical stress. Pierre Curie discovered this effect in 1880 in quartz crystals. When pressure is applied to piezoelectric materials, the ions in the crystal unit cells are displaced, causing an electric polarization. Conversely, an electric field will cause the crystals to mechanically deform. Common piezoelectric materials include quartz and barium titanate. Piezoelectricity is used in applications such as smart sensors, medical imaging, energy harvesting, and more. Lead-based piezoelectrics are widely used but lead-free materials are being developed due to environmental concerns.
Towards novel Mott FET: Concept, Present Status, and FutureIsao Inoue
This document discusses the concept, present status, and future of Mott field-effect transistors (FETs). It begins with an overview of quantum critical phenomena and how physical parameters like pressure can be used to study quantum critical points. The document then discusses how electrostatic carrier doping could provide a randomness-free method to study quantum critical phenomena. It proposes that a Mott FET, which uses electrostatic doping to control electronic states near a quantum critical point, could enable such studies. The rest of the document discusses the basics of electrostatic field effects and how a Mott FET could overcome limitations of conventional MOSFETs for continued device miniaturization. It introduces the concept of Mott insulators and how
History of ald riikka puurunen 15.11.2013 finalRiikka Puurunen
Invited seminar talk by R. L. Puurunen, November 15, 2013, Beneq and ETU (LETI) joint ALD laboratory opening seminar, St. Petersburg, Russia, title: History of ALD: from lab research to industrial applications
This document discusses uranium enrichment technology and processes. It explains that uranium exists as the isotopes U-238 and U-235, with U-235 being fissile. It then describes the main types and grades of enriched uranium and the primary processes used for enrichment, including gaseous diffusion, gas centrifuges, laser separation, and other techniques like aerodynamic, electromagnetic, chemical, and plasma separation methods.
Extensive efforts have been made to harvest energy f from water in the form of raindrops, river and ocean wave, tidal and others. However, achieving a high-density of electrical power generation is challenging. Traditional hydraulic power generation mainly uses electromagnetic generators that are heavy, bulky, and become inefficient with water supply. Alternative, the water droplet or solid-based electric nano-generator, has so far generated peak power densities for less than one watt per square meter, owing to the limit at ions imposed by interfacial effects as seen in characterization of the charge generation and transfer that occur at solid-liquid or liquid-solid interfaces. Here we develop a device to harvest energy from impinging water droplet s by using an architecture that compromises a polytetrafluoroethylene film on an indium oxide substrate plus an aluminium electrode. We show that spreading of an impinged water droplet on the device bridges, the originally disconnect ed component s into a closed-loop electrical system, transforming the conventional interfacial effect into bulk effect, and so enhancing device that is limited by interfacial effects.
Photoelectrochemical characterization of titania photoanodes fabricated using...Arkansas State University
Design and fabrication of new electrodes for photo-electrolysis using a material that is photo-active, stable, corrosion resistant, and cost effective.
Presentation on energy iter2017 januaryCooper Lackay
This document provides an overview of nuclear fusion and the ITER (International Thermonuclear Experimental Reactor) project. It describes how ITER aims to demonstrate the scientific and technological feasibility of fusion power by producing 500 megawatts of power sustained for long periods using the tokamak design. Key challenges for ITER include materials issues from high heat and particle loads as well as producing tritium fuel on-site, but proposed solutions could help address these challenges. If successful, ITER will bring the world closer to developing fusion as a safe, clean, and virtually limitless source of energy.
Piezoelectricity is the ability of certain materials to generate an electric charge in response to applied mechanical stress. Pierre Curie discovered this effect in 1880 in quartz crystals. When pressure is applied to piezoelectric materials, the ions in the crystal unit cells are displaced, causing an electric polarization. Conversely, an electric field will cause the crystals to mechanically deform. Common piezoelectric materials include quartz and barium titanate. Piezoelectricity is used in applications such as smart sensors, medical imaging, energy harvesting, and more. Lead-based piezoelectrics are widely used but lead-free materials are being developed due to environmental concerns.
A Study of electromechanical behavior of Piezo ceramic Smart materials and ap...Dheepan Thangavelu
The document discusses a study of the electromechanical behavior of piezoceramic smart materials, specifically lead zirconate titanate (PZT), and the design of a basic circuit to incorporate PZT crystals into vibration alerts in mobile phones. PZT is analyzed as it produces motion through electric potential and optimal vibration can be achieved with minimal power consumption. A circuit with a receiver, comparator, PZT ceramic, and amplifiers is designed to replace classic motor-operated vibration in phones using this smart material.
This document provides an overview of piezoelectricity including its history, internal working, materials, effects, and applications. It describes how certain crystals produce an electric charge when mechanically stressed (piezoelectric effect) or deform when an electric field is applied (reverse piezoelectric effect). Common piezoelectric materials include quartz, barium titanate, lead zirconate titanate. The document also discusses piezoelectric sensors, actuators, transducers and their uses in applications such as energy harvesting floor tiles, medical devices, and ignition lighters.
This document provides an overview of piezoelectricity including its history, internal working, materials, effects, and applications. It describes how certain crystals produce an electric charge when mechanically stressed (direct piezoelectric effect) or change shape when exposed to an electric field (reverse effect). Common piezoelectric materials include quartz, ceramics, and polymers. The document outlines key piezoelectric applications such as sensors, actuators, generators, and transducers used in devices like lighters, microphones, and medical equipment.
An analysis of rf sputtering power and argon gas pressure affecting on i ti o...Alexander Decker
This document analyzes the effects of RF sputtering power and argon gas pressure on the characteristics of titanium-doped indium oxide (ITiO) films. ITiO films were deposited on glass substrates using RF magnetron sputtering with a 2.5 wt% TiO2-doped In2O3 target. Structural, electrical, and optical properties of the films were analyzed using various techniques. The results showed that a RF power of 200 W and argon gas pressure of 10 mTorr produced films with the lowest resistivity of 4.9×10-4 Ω-cm and average optical transmittance of 75%. This resistivity is low enough to be used as a transparent conducting layer
OFET Preparation by Lithography and Thin Film Depositions ProcessTELKOMNIKA JOURNAL
This document summarizes research on preparing an organic field-effect transistor (OFET) using lithography and thin film deposition processes. The key points are:
1. An OFET was prepared with a bottom contact structure using copper phthalocyanine as the active layer deposited via vacuum evaporation on a silicon substrate.
2. Lithography was used to pattern gold source and drain electrodes, followed by deposition of the copper phthalocyanine thin film.
3. Electrical characterization of the completed OFET showed current increasing with drain voltage and gate voltage, indicating p-type accumulation mode operation, though saturation was not observed possibly due to a high threshold voltage.
This presentation summarizes history and recent development of perovskite solar cells. If you have any questions or comments, you can reach me at agassifeng@gmail.com
Using the electric apparatus to execute a series of tests with non destructive carriers immersed in sensitive solvable materials that will result into nuclear transmutations with simultaneous appearance of thermal energy exceeding the provided electric energy by the electric apparatus. The overall apparatus materials and procedures combined will form the GEOLENT TECHNOLOGY that can be used as an alternative tool in order to confront the urgent problem of clean energy generation and the climate change problem.
This document discusses converting sound energy into electricity using piezoelectric materials. It begins by introducing piezoelectricity and how certain materials can generate an electric charge when mechanically strained. It then proposes three methods for converting sound energy using piezoelectricity: 1) using a curtain and magnets to generate electricity from sound wave oscillations, 2) converting sound to heat then to electricity, and 3) using piezoelectric materials to directly convert the mechanical strain from sound waves into electric charges. The document concludes that sound contains large amounts of energy that can be harvested using these piezoelectric conversion methods.
Influence of high work function ITO:Zr films for the barrier height modification...Shahzada Qamar Hussain
This document discusses the influence of high work function indium tin oxide doped with zirconium (ITO:Zr) films on the performance of heterojunction solar cells with intrinsic thin layers (HIT solar cells). ITO:Zr films were deposited using RF magnetron sputtering while varying the ratio of oxygen to argon gas flows. Increasing the oxygen flow improved the work function and mobility of the ITO:Zr films. ITO:Zr films deposited with an oxygen to argon flow ratio of 0.4% showed the best performance in HIT solar cells, achieving a open circuit voltage of 710 mV, short circuit current density of 33.66 mA/cm2,
Influence of high work function ITO:Zr films for the barrier height modification...Shahzada Qamar Hussain
We report the influence of magnetron sputtered zirconium-doped indium tin oxide (ITO:Zr) films with
high mobility and work function on the heterojunction with intrinsic thin layer (HIT) solar cell. The
addition of oxygen (O
) to argon (Ar) flow ratio during the deposition process improves the Hall mobility
of the ITO:Zr films while the carrier concentration decreased. The small amount of oxygen resulted in an
enhancement of work function while excess amount of O
2
was not suitable for the electrical and surface
properties of ITO:Zr films. The increase of O
2
2
/Ar flow ratio from 0% to 0.4% improved the work function
from 5.03 to 5.13 eV while the conductivity of ITO:Zr films remained about the same. The ITO:Zr films
were employed as a front anti-reflection layer in a HIT solar cell and the best photo-voltage parameters
were found to be V
oc
¼710 mV, J
sc
¼33.66 mA/cm
2
,FF¼72.4%, and η¼17.31% for the O
/Ar flow ratio of
0.4%. The increase of ITO:Zr work function leads to an increase in open circuit voltage (V
) and fill factor
(FF) of the device. Therefore, the ITO:Zr films with high work function can be used to modify the front
barrier height in the HIT solar cell.
1) The document discusses the basics of solar photovoltaic technology from the atomic level to full solar arrays. It covers topics like photo absorption and generation, energy levels, band structure, doping, p-n junction formation, and device fabrication for both crystalline silicon and thin film solar cell technologies.
2) The document then discusses generation and recombination processes in solar cells like radiative, non-radiative, Auger and Shockley-Read-Hall recombination and how they impact efficiency. It also covers the continuity equation and transport processes.
3) Finally, the basic one diode equivalent circuit model for solar cells is presented along with the Shockley diode equation and how it relates to the current-
This document provides background information on grounding systems and their importance for lightning protection. It discusses how grounding systems provide a low impedance path to safely dissipate lightning currents and reduce risks of damage, injury, and hazards. The document outlines criteria for a good grounding system, including providing a low impedance return path, reducing breakdown risks, minimizing electric shock hazard, and meeting safe touch and step voltage limits. It also presents examples of lightning damages that can occur without a proper grounding system and discusses basic design rules for sizing and spacing grounding wires.
A Review On WO3 Films Prepared By Various MethodsLori Mitchell
This document provides a review of tungsten oxide (WO3) thin films prepared by various deposition methods for applications as an electrochromic material. WO3 has good electrochromic properties and can change its optical properties with the application of a voltage, making it suitable for uses in smart windows, displays, and mirrors. The document discusses several common deposition techniques for WO3 thin films, including sputtering, sol-gel, spray pyrolysis, and others. It also summarizes the electrochromic phenomenon in WO3 and some applications of electrochromic devices using WO3, such as smart windows, displays, and auto rear-view mirrors.
An understanding of the electronic bipolar resistance switching behavior in C...IJRES Journal
In this study, TiO2 films and devices were prepared by sol-gel method. The bipolar resistive switching
phenomena was observed in the Cu/TiO2/ITO device. The conduction mechanism of devices were analyzed. It was
found that the conduction mechanism is dominated by space charge limited current in high resistance state, and
Schottky emission in low resistance state.
Implantation is a process used to dope semiconductors with impurities by accelerating ions into a solid target material. Ion implantation is advantageous over diffusion due to having no saturation limit. SRIM and TRIM software can be used to simulate ion implantation and predict values like ion range and damage. The thermal spike model describes how the energetic collisions from an ion create a brief high temperature region along its path, resulting in defect formation as the energy diffuses away. Observations from SRIM/TRIM include predicting the ion range, damage events within the target, and energy loss mechanisms during implantation.
Power generation by cheap and relatively abundant source of microbes has been investigated.
This form of renewable energy is gaining grounds in the world of energy technology. Microbial fuel
cell (MFC) technology signifies a new source for the generation of electricity from microbes found
in wastewater. The current study deals with performance of ion exchange partition and its viable
candidature in power production. The effect of operational parameters on electricity generation and
COD consumption was reported. A maximum voltage of 1.3 V was observed at 40 % H2O2 along
with wastewater from GGBL in an anode chamber. Average COD removal was more than 88%.
CONVERTING SOUND ENERGY INTO ELECTRICITY USING PIEZOELECTRIC MATERIAL: A STUDYIAEME Publication
In the search for alternative energy sources there's one form of energy you don't hear much about, which is ironic because I'm referring to sound energy. sound is a mechanical form of energy which travel in the form of wave, mechanical wave that is an oscillation of pressure this pressure created by the sound could be used to convert it into electric energy or other form of energy.
This document discusses the need for new energy technologies to address global warming and rising fossil fuel usage. It proposes that low energy nuclear reactions (LENR) occurring in metal wires under high voltage pulses could provide such a technology. The document outlines previous research showing LENR effects in wire fragmentation experiments and proposes a new start-up company and research plan to further investigate a prototype LENR energy generator using improved experimental devices. The goal is to demonstrate a new energy source and establish its efficiency and economic viability.
This document provides information about swift heavy ion irradiation and its role in materials science. It discusses the 15UD Pelletron facility at Inter University Accelerator Centre in New Delhi, India, which can produce beams of various heavy ions up to 15MV. Energetic heavy ions can modify materials through electronic and nuclear energy loss. Defect formation, amorphization, and phase transformations can occur in materials due to swift heavy ion irradiation. The document focuses on using this technique to study and modify properties of nonlinear optical materials for applications in photonics and optoelectronics.
A Study of electromechanical behavior of Piezo ceramic Smart materials and ap...Dheepan Thangavelu
The document discusses a study of the electromechanical behavior of piezoceramic smart materials, specifically lead zirconate titanate (PZT), and the design of a basic circuit to incorporate PZT crystals into vibration alerts in mobile phones. PZT is analyzed as it produces motion through electric potential and optimal vibration can be achieved with minimal power consumption. A circuit with a receiver, comparator, PZT ceramic, and amplifiers is designed to replace classic motor-operated vibration in phones using this smart material.
This document provides an overview of piezoelectricity including its history, internal working, materials, effects, and applications. It describes how certain crystals produce an electric charge when mechanically stressed (piezoelectric effect) or deform when an electric field is applied (reverse piezoelectric effect). Common piezoelectric materials include quartz, barium titanate, lead zirconate titanate. The document also discusses piezoelectric sensors, actuators, transducers and their uses in applications such as energy harvesting floor tiles, medical devices, and ignition lighters.
This document provides an overview of piezoelectricity including its history, internal working, materials, effects, and applications. It describes how certain crystals produce an electric charge when mechanically stressed (direct piezoelectric effect) or change shape when exposed to an electric field (reverse effect). Common piezoelectric materials include quartz, ceramics, and polymers. The document outlines key piezoelectric applications such as sensors, actuators, generators, and transducers used in devices like lighters, microphones, and medical equipment.
An analysis of rf sputtering power and argon gas pressure affecting on i ti o...Alexander Decker
This document analyzes the effects of RF sputtering power and argon gas pressure on the characteristics of titanium-doped indium oxide (ITiO) films. ITiO films were deposited on glass substrates using RF magnetron sputtering with a 2.5 wt% TiO2-doped In2O3 target. Structural, electrical, and optical properties of the films were analyzed using various techniques. The results showed that a RF power of 200 W and argon gas pressure of 10 mTorr produced films with the lowest resistivity of 4.9×10-4 Ω-cm and average optical transmittance of 75%. This resistivity is low enough to be used as a transparent conducting layer
OFET Preparation by Lithography and Thin Film Depositions ProcessTELKOMNIKA JOURNAL
This document summarizes research on preparing an organic field-effect transistor (OFET) using lithography and thin film deposition processes. The key points are:
1. An OFET was prepared with a bottom contact structure using copper phthalocyanine as the active layer deposited via vacuum evaporation on a silicon substrate.
2. Lithography was used to pattern gold source and drain electrodes, followed by deposition of the copper phthalocyanine thin film.
3. Electrical characterization of the completed OFET showed current increasing with drain voltage and gate voltage, indicating p-type accumulation mode operation, though saturation was not observed possibly due to a high threshold voltage.
This presentation summarizes history and recent development of perovskite solar cells. If you have any questions or comments, you can reach me at agassifeng@gmail.com
Using the electric apparatus to execute a series of tests with non destructive carriers immersed in sensitive solvable materials that will result into nuclear transmutations with simultaneous appearance of thermal energy exceeding the provided electric energy by the electric apparatus. The overall apparatus materials and procedures combined will form the GEOLENT TECHNOLOGY that can be used as an alternative tool in order to confront the urgent problem of clean energy generation and the climate change problem.
This document discusses converting sound energy into electricity using piezoelectric materials. It begins by introducing piezoelectricity and how certain materials can generate an electric charge when mechanically strained. It then proposes three methods for converting sound energy using piezoelectricity: 1) using a curtain and magnets to generate electricity from sound wave oscillations, 2) converting sound to heat then to electricity, and 3) using piezoelectric materials to directly convert the mechanical strain from sound waves into electric charges. The document concludes that sound contains large amounts of energy that can be harvested using these piezoelectric conversion methods.
Influence of high work function ITO:Zr films for the barrier height modification...Shahzada Qamar Hussain
This document discusses the influence of high work function indium tin oxide doped with zirconium (ITO:Zr) films on the performance of heterojunction solar cells with intrinsic thin layers (HIT solar cells). ITO:Zr films were deposited using RF magnetron sputtering while varying the ratio of oxygen to argon gas flows. Increasing the oxygen flow improved the work function and mobility of the ITO:Zr films. ITO:Zr films deposited with an oxygen to argon flow ratio of 0.4% showed the best performance in HIT solar cells, achieving a open circuit voltage of 710 mV, short circuit current density of 33.66 mA/cm2,
Influence of high work function ITO:Zr films for the barrier height modification...Shahzada Qamar Hussain
We report the influence of magnetron sputtered zirconium-doped indium tin oxide (ITO:Zr) films with
high mobility and work function on the heterojunction with intrinsic thin layer (HIT) solar cell. The
addition of oxygen (O
) to argon (Ar) flow ratio during the deposition process improves the Hall mobility
of the ITO:Zr films while the carrier concentration decreased. The small amount of oxygen resulted in an
enhancement of work function while excess amount of O
2
was not suitable for the electrical and surface
properties of ITO:Zr films. The increase of O
2
2
/Ar flow ratio from 0% to 0.4% improved the work function
from 5.03 to 5.13 eV while the conductivity of ITO:Zr films remained about the same. The ITO:Zr films
were employed as a front anti-reflection layer in a HIT solar cell and the best photo-voltage parameters
were found to be V
oc
¼710 mV, J
sc
¼33.66 mA/cm
2
,FF¼72.4%, and η¼17.31% for the O
/Ar flow ratio of
0.4%. The increase of ITO:Zr work function leads to an increase in open circuit voltage (V
) and fill factor
(FF) of the device. Therefore, the ITO:Zr films with high work function can be used to modify the front
barrier height in the HIT solar cell.
1) The document discusses the basics of solar photovoltaic technology from the atomic level to full solar arrays. It covers topics like photo absorption and generation, energy levels, band structure, doping, p-n junction formation, and device fabrication for both crystalline silicon and thin film solar cell technologies.
2) The document then discusses generation and recombination processes in solar cells like radiative, non-radiative, Auger and Shockley-Read-Hall recombination and how they impact efficiency. It also covers the continuity equation and transport processes.
3) Finally, the basic one diode equivalent circuit model for solar cells is presented along with the Shockley diode equation and how it relates to the current-
This document provides background information on grounding systems and their importance for lightning protection. It discusses how grounding systems provide a low impedance path to safely dissipate lightning currents and reduce risks of damage, injury, and hazards. The document outlines criteria for a good grounding system, including providing a low impedance return path, reducing breakdown risks, minimizing electric shock hazard, and meeting safe touch and step voltage limits. It also presents examples of lightning damages that can occur without a proper grounding system and discusses basic design rules for sizing and spacing grounding wires.
A Review On WO3 Films Prepared By Various MethodsLori Mitchell
This document provides a review of tungsten oxide (WO3) thin films prepared by various deposition methods for applications as an electrochromic material. WO3 has good electrochromic properties and can change its optical properties with the application of a voltage, making it suitable for uses in smart windows, displays, and mirrors. The document discusses several common deposition techniques for WO3 thin films, including sputtering, sol-gel, spray pyrolysis, and others. It also summarizes the electrochromic phenomenon in WO3 and some applications of electrochromic devices using WO3, such as smart windows, displays, and auto rear-view mirrors.
An understanding of the electronic bipolar resistance switching behavior in C...IJRES Journal
In this study, TiO2 films and devices were prepared by sol-gel method. The bipolar resistive switching
phenomena was observed in the Cu/TiO2/ITO device. The conduction mechanism of devices were analyzed. It was
found that the conduction mechanism is dominated by space charge limited current in high resistance state, and
Schottky emission in low resistance state.
Implantation is a process used to dope semiconductors with impurities by accelerating ions into a solid target material. Ion implantation is advantageous over diffusion due to having no saturation limit. SRIM and TRIM software can be used to simulate ion implantation and predict values like ion range and damage. The thermal spike model describes how the energetic collisions from an ion create a brief high temperature region along its path, resulting in defect formation as the energy diffuses away. Observations from SRIM/TRIM include predicting the ion range, damage events within the target, and energy loss mechanisms during implantation.
Power generation by cheap and relatively abundant source of microbes has been investigated.
This form of renewable energy is gaining grounds in the world of energy technology. Microbial fuel
cell (MFC) technology signifies a new source for the generation of electricity from microbes found
in wastewater. The current study deals with performance of ion exchange partition and its viable
candidature in power production. The effect of operational parameters on electricity generation and
COD consumption was reported. A maximum voltage of 1.3 V was observed at 40 % H2O2 along
with wastewater from GGBL in an anode chamber. Average COD removal was more than 88%.
CONVERTING SOUND ENERGY INTO ELECTRICITY USING PIEZOELECTRIC MATERIAL: A STUDYIAEME Publication
In the search for alternative energy sources there's one form of energy you don't hear much about, which is ironic because I'm referring to sound energy. sound is a mechanical form of energy which travel in the form of wave, mechanical wave that is an oscillation of pressure this pressure created by the sound could be used to convert it into electric energy or other form of energy.
This document discusses the need for new energy technologies to address global warming and rising fossil fuel usage. It proposes that low energy nuclear reactions (LENR) occurring in metal wires under high voltage pulses could provide such a technology. The document outlines previous research showing LENR effects in wire fragmentation experiments and proposes a new start-up company and research plan to further investigate a prototype LENR energy generator using improved experimental devices. The goal is to demonstrate a new energy source and establish its efficiency and economic viability.
This document provides information about swift heavy ion irradiation and its role in materials science. It discusses the 15UD Pelletron facility at Inter University Accelerator Centre in New Delhi, India, which can produce beams of various heavy ions up to 15MV. Energetic heavy ions can modify materials through electronic and nuclear energy loss. Defect formation, amorphization, and phase transformations can occur in materials due to swift heavy ion irradiation. The document focuses on using this technique to study and modify properties of nonlinear optical materials for applications in photonics and optoelectronics.
Similar to Inhomogeneous current distribution at oxide interface. (20)
The binding of cosmological structures by massless topological defectsSérgio Sacani
Assuming spherical symmetry and weak field, it is shown that if one solves the Poisson equation or the Einstein field
equations sourced by a topological defect, i.e. a singularity of a very specific form, the result is a localized gravitational
field capable of driving flat rotation (i.e. Keplerian circular orbits at a constant speed for all radii) of test masses on a thin
spherical shell without any underlying mass. Moreover, a large-scale structure which exploits this solution by assembling
concentrically a number of such topological defects can establish a flat stellar or galactic rotation curve, and can also deflect
light in the same manner as an equipotential (isothermal) sphere. Thus, the need for dark matter or modified gravity theory is
mitigated, at least in part.
EWOCS-I: The catalog of X-ray sources in Westerlund 1 from the Extended Weste...Sérgio Sacani
Context. With a mass exceeding several 104 M⊙ and a rich and dense population of massive stars, supermassive young star clusters
represent the most massive star-forming environment that is dominated by the feedback from massive stars and gravitational interactions
among stars.
Aims. In this paper we present the Extended Westerlund 1 and 2 Open Clusters Survey (EWOCS) project, which aims to investigate
the influence of the starburst environment on the formation of stars and planets, and on the evolution of both low and high mass stars.
The primary targets of this project are Westerlund 1 and 2, the closest supermassive star clusters to the Sun.
Methods. The project is based primarily on recent observations conducted with the Chandra and JWST observatories. Specifically,
the Chandra survey of Westerlund 1 consists of 36 new ACIS-I observations, nearly co-pointed, for a total exposure time of 1 Msec.
Additionally, we included 8 archival Chandra/ACIS-S observations. This paper presents the resulting catalog of X-ray sources within
and around Westerlund 1. Sources were detected by combining various existing methods, and photon extraction and source validation
were carried out using the ACIS-Extract software.
Results. The EWOCS X-ray catalog comprises 5963 validated sources out of the 9420 initially provided to ACIS-Extract, reaching a
photon flux threshold of approximately 2 × 10−8 photons cm−2
s
−1
. The X-ray sources exhibit a highly concentrated spatial distribution,
with 1075 sources located within the central 1 arcmin. We have successfully detected X-ray emissions from 126 out of the 166 known
massive stars of the cluster, and we have collected over 71 000 photons from the magnetar CXO J164710.20-455217.
PPT on Direct Seeded Rice presented at the three-day 'Training and Validation Workshop on Modules of Climate Smart Agriculture (CSA) Technologies in South Asia' workshop on April 22, 2024.
Current Ms word generated power point presentation covers major details about the micronuclei test. It's significance and assays to conduct it. It is used to detect the micronuclei formation inside the cells of nearly every multicellular organism. It's formation takes place during chromosomal sepration at metaphase.
Describing and Interpreting an Immersive Learning Case with the Immersion Cub...Leonel Morgado
Current descriptions of immersive learning cases are often difficult or impossible to compare. This is due to a myriad of different options on what details to include, which aspects are relevant, and on the descriptive approaches employed. Also, these aspects often combine very specific details with more general guidelines or indicate intents and rationales without clarifying their implementation. In this paper we provide a method to describe immersive learning cases that is structured to enable comparisons, yet flexible enough to allow researchers and practitioners to decide which aspects to include. This method leverages a taxonomy that classifies educational aspects at three levels (uses, practices, and strategies) and then utilizes two frameworks, the Immersive Learning Brain and the Immersion Cube, to enable a structured description and interpretation of immersive learning cases. The method is then demonstrated on a published immersive learning case on training for wind turbine maintenance using virtual reality. Applying the method results in a structured artifact, the Immersive Learning Case Sheet, that tags the case with its proximal uses, practices, and strategies, and refines the free text case description to ensure that matching details are included. This contribution is thus a case description method in support of future comparative research of immersive learning cases. We then discuss how the resulting description and interpretation can be leveraged to change immersion learning cases, by enriching them (considering low-effort changes or additions) or innovating (exploring more challenging avenues of transformation). The method holds significant promise to support better-grounded research in immersive learning.
ESR spectroscopy in liquid food and beverages.pptxPRIYANKA PATEL
With increasing population, people need to rely on packaged food stuffs. Packaging of food materials requires the preservation of food. There are various methods for the treatment of food to preserve them and irradiation treatment of food is one of them. It is the most common and the most harmless method for the food preservation as it does not alter the necessary micronutrients of food materials. Although irradiated food doesn’t cause any harm to the human health but still the quality assessment of food is required to provide consumers with necessary information about the food. ESR spectroscopy is the most sophisticated way to investigate the quality of the food and the free radicals induced during the processing of the food. ESR spin trapping technique is useful for the detection of highly unstable radicals in the food. The antioxidant capability of liquid food and beverages in mainly performed by spin trapping technique.
Mending Clothing to Support Sustainable Fashion_CIMaR 2024.pdfSelcen Ozturkcan
Ozturkcan, S., Berndt, A., & Angelakis, A. (2024). Mending clothing to support sustainable fashion. Presented at the 31st Annual Conference by the Consortium for International Marketing Research (CIMaR), 10-13 Jun 2024, University of Gävle, Sweden.
ESA/ACT Science Coffee: Diego Blas - Gravitational wave detection with orbita...Advanced-Concepts-Team
Presentation in the Science Coffee of the Advanced Concepts Team of the European Space Agency on the 07.06.2024.
Speaker: Diego Blas (IFAE/ICREA)
Title: Gravitational wave detection with orbital motion of Moon and artificial
Abstract:
In this talk I will describe some recent ideas to find gravitational waves from supermassive black holes or of primordial origin by studying their secular effect on the orbital motion of the Moon or satellites that are laser ranged.
Inhomogeneous current distribution at oxide interface.
1. Inhomogeneous Current
Distribution at Oxide Interface
National Institute of Advanced Industrial Science & Technology (AIST) (Tsukuba, Japan)
Isao H. Inoue
2
Electrostatic carrier doping
Quantum critical
phenomena
Mott transistor Exotic
phonomena
集中講義
「モットトランジスタは実現できるのか?」
本来は金属であるはずの物質が、強い電子相関(電子どうしに働くクーロン斥力)の
ために絶縁体となっている物質を「モット絶縁体」と呼ぶ。モット絶縁体にキャリア
をドープすると、局在していた全てのキャリアがいっせいに動き出して金属になる。
いわゆるモット転移である。このモット転移を利用して、新概念のトランジスタを作
れないだろうか。そのためには何が必要なのか?
本講義では、「強相関」「電界効果ドーピング」という二つのキーワードに関する基
本的な物理を簡単に解説し、それに伴う物理現象を紹介する。そして、現状の半導体
デバイスの問題点と「モットトランジスタ」の可能性について議論したい。
日時:2014年7月15日(火) 10:30-12:00 (90分), 13:15-14:45 (90分), 15:00-16:30 (90分)
同 16日(水) 10:30-12:00 (90分), 13:15-14:45 (90分), 15:00-16:30 (90分)
(講演会)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
3
場所:東京工業大学大岡山キャンパス
4
Electrostatic carrier doping
Quantum critical
phenomena
Mott ✔ transistor Exotic
phonomena on the horizon!
Quantum criticality
Temp
Classical
Critical Point
Ordered
State
Quantum
Critical Point
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 Physical Parameters
(Pressure, Magnetic field,
Carrier number, etc.)
What happens at QCP?
Classical
Critical Point
Quantum
Critical Point
Super
Physical Parameters
5 i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
Temp
Ordered
State
Pressure
UGe2
Super
CeCu2Si2
Temp
Temp
Ferro Antiferro
Pressure
6
2. Randomness-free method:
quantum critical phenomena is
so vulnerable to disorders
Continuous and reversible control
of electronic states on the verge
of the quantum critical point
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
7
For QCP study, we need …
Phys. Parameters are always
either Pressure or Mag. Field
CeCu2Si2
AF
Super
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
UGe2
Ferro
Super
Pressure
Temp
Saxena et al., Nature 406, 587 (2000)
[ Coleman, Nature 406, 580 (2000) ]
Pressure
Yuan et al., Science 302, 2104 (2003)
Temp
8
Electrostatic Carrier Doping
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 9
Why is electrostatic carrier
doping so difficult?
Defects in transition-metal oxides
TiO2-x Co1-xO, Fe1-xO, Ni1-xO
valence electron
1st electron
ionisation
2nd electron
ionisation
neutral
composite
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
valence electron
neutral composite
11
Why is electrostatic carrier
doping so difficult?
Transition-Metal Oxides
≈ ionic crystals
(because of the strong electron correlations)
!
!
!
→ Defects form easily under large electric field.
3. Good examples of
electrostatic carrier doping?
VG = 0V
VG = -2.5V
1010
10 6
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 13
Channel Resistivity (Ωcm)
10-2
10-3
10-4
Nd0.5Sm0.5NiO3
220 260
300
Temperature (K)
S. Asanuma et al., APL. 97, 142110 (2010)
VO2
10 2
Channel Resistance (Ω)
100 150 200 250 300
Temperature (K)
M. Nakano et al., Nature. 487, 459 (2012)
Electrochemical reaction…?
Science 339, 1402 (2013)
VO VO2 2
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 14
Electron correlation
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
Electrolytic colouration
15 i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
16
Electrolytic colouration
M. M. Abraham et al.,
J. Solid State Chem. 51, 1 (1984)
MgO single crystal (transparent)
Mn impurity of ~100ppm
2.5mm thick
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
Pt cathod
+ + + + + + + + + + + + + Pt anode
apply 1.1kV for 2hrs
at 1050ºC
17
-
Electrolytic colouration
€
MgO single crystal (transparent)
MnO+ 2e− →Mn(metal)+ 1
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
2 O2
Electroreduction!
M. M. Abraham et al.,
J. Solid State Chem. 51, 1 (1984)
Mn impurity of ~100ppm
2.5mm thick
Pt cathod
+ + + + + + + + + + + + + Pt anode
apply 1.1kV for 2hrs
at 1050ºC
18
-
4. Current induced oxidation
J [A/cm2]
instantaneous destruction of Ti film
atomic rearrangement occurs!
oxygen is provided from air:
no barrier is formed in vacuum
nanocracks at grain boundary
T. Schmidt et al.,
Appl. Phys. Lett. 73, 2173 (1998)
108
107
106
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
J ~ 107A/cm2
Electroxidation!
I. H. Inoue et al.,
Phys. Rev. B77, 035105 (2008)
19
"Redox memory"
RRAM, ReRAM, Memristor, and so on
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
20
Resistance switching of redox memory
I. H. Inoue et al.,
Phys. Rev. B77, 035105 (2008)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
Dielectric breakdown
“Lichtenberg Figure”
http://www.CapturedLightning.com/
An electron accelerator of three million volts blasts
electrons through the acrylic sheet.
It traps the electrons inside.
The electrons will stay trapped for hours, but a
knock with a sharp point opens a path for them to
make a quick escape.
21 i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 22
River of electrons
“Lichtenberg Figure”
http://www.CapturedLightning.com/
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 23
e
Electrons gather from all parts of
the block, joining up to form
larger and larger streams of
electric current on their way toward
the exit point.
As the charge leaves, it heats up
and damages the plastic along the
branching trails it follows, leaving a
permanent trace of its path
e
e
e
e
Breakdown forms a bush
a point of high local field
(rough electrode, conducting
inclusions, etc.)
H. J. Wiesmann and H. R. Zeller,
J. Appl. Phys. 60, 1770 (1986)
filamentation (rapid
flow of space charge)
amplification, propagation and
multiplication (branching)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
24
5. Breakdown forms a bush
H. A. Fowler, J. E. Devaney, and J. G. Hagedorn,
IEEE Transactions on Dielectrics and Electrical Insulation, 10, 73 (2003)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
25
Forming of RRAM
anode (+)
anode (+)
e O2
O2
O2
cathode (-)
O2
electro-reduction
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
anode (+)
cathode (-)
cathode (-)
25th June 2008 26
€
CoO→
1
2
O2(gas) + Co2+ + 2e−
e e
e e
e
e
e
e e e
e
Open Faucet Closed Faucet
Current density at a faucet of
7x10-10cm2 (φ150nm)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech,N a1n6 oJeullye c2t0r1o4nics Days 2008 @ Aachen 15 May 2008
Reset
Jon ~ 1×107 A/cm2
27
Switching of RRAM
Can we apply
large electric field to TMO
without creating oxygen defects?
Transition-Metal Oxides
≈ ionic crystals
(because of the strong electron correlations)
!
!
!
→ Defects form easily under large electric field.
Yes!
Use Parylene to suppress
the defects formation
National Institute of Advanced Industrial Science & Technology (AIST) (Tsukuba, Japan)
Isao H. Inoue Neeraj Kumar Ai Kitou
Protect surface by Parylene
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
"Biocompatible glass is
coated with protective
substances for anti-migration
and insulating
properties and this is
where the Parylene C
coating comes. ! It also protects the
microchip from natural
substances in the body,
that may penetrate
through micro-cracks
caused by mechanical
damages."
From "moving a pet to Australia" website
Parylene coated
rotors and stators are
used to control the
Canadian arm for
NASA Space Shuttle.
Parylene coated circuit boards provides
excellent resistance to moisture, chemicals,
and mold. Circuit boards for medical
equipment can be steam and gamma
sterilised. Parylene can also prevent
dendrite and tin whisker growth.
From "Paratronix Inc." website
Parylene coating of paper
documents, autographs, and
photos retards the aging process
and protects from moisture, mold,
and chemicals.
30
6. Protect oxide surface by Parylene
Creation of oxygen vacancies is suppressed. !Channel is kept clean.
conformal coating
P.-J. Chen et al.,
Lab on a Chip 6, 803 (2006)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
oxides
Parylene/SrTiO3 FET
31 i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
SrTiO3
Using Parylene for the gate insulator,
mobility is drastically enhanced.
But carrier density is not large...
32
must be very thin
High-k/Parylene bilayer
to accumulate more carriers
In General, Parylene film is very thick
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
"Biocompatible glass is
coated with protective
substances for anti-migration
and insulating
properties and this is
where the Parylene C
coating comes. ! It also protects the
microchip from natural
substances in the body,
that may penetrate
through micro-cracks
caused by mechanical
damages."
From "moving a pet to Australia" website
Parylene coated
rotors and stators are
used to control the
Canadian arm for
NASA Space Shuttle.
Parylene coated circuit boards provides
excellent resistance to moisture, chemicals,
and mold. Circuit boards for medical
equipment can be steam and gamma
sterilised. Parylene can also prevent
dendrite and tin whisker growth.
From "Paratronix Inc." website
Parylene coating of paper
documents, autographs, and
photos retards the aging process
and protects from moisture, mold,
and chemicals.
Parylene film
in most of the
literatures are
more than
~1μm thick.
34
High-k (HfO2, Ta2O5, etc.)/Parylene bilayer
Hybrid gate insulator
!
high-k materials (~15 < ε < ~25)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
+
Parylene-C (ε=3.2)
Isao Inoue and Hisashi Shima,
Japan Patent Number: 5522688, Date of Patent: 18th April, 2014
Au
HfO2
Al
SrTiO3
35 i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
Ti
parylene
BF-TEM image
36
7. SrTiO3
Au
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
Al
HfO2
Ti
parylene
BF-TEM image
37 i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
SrTiO3
Al
HfO2
parylene
BF-TEM image
38
Au Ti
HfO2
parylene
Al
SrTiO3
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
STEM-EDS mapping
39
We are preparing FET devices
using a conventional
photolithography
“Intel 4004 IC”
the original microprocessor
or “computer on a chip.”
Preliminary data of 20μm devices
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
41
High-k/Parylene/SrTiO3
cleaner interface
continuous doping control
8. National Institute of Advanced Industrial Science & Technology (AIST) (Japan)
Isao H. Inoue
Nanyang Technological University (Singapore)
Christos Panagopoulos
*also AIST
(now a PhD student in
Cornell University, US)
Azar B. Eyvazov*
CNRS & Université Paris Sud (France)
Pablo Stoliar** Marcelo J. Rozenberg***
**also Universidad Nacional de San Martin, Argentina,
and Université de Nantes, France
***also Universidad de Buenos Aires, Argentina
Unusual I-V curves
Hardly seen in Al2O3/SrTiO3
Al2O3/SrTiO3 has some amount
of carriers from the first
K. Ueno et al., App. Phys. Lett. 83, 1755 (2003)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
10-6
44
A. B. Eyvazov et al., Sci. Rep. 3, 1721 (2013)
When increasing VSD
normal
abnormal !
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
10-6
increasing VSD
for large fixed VG
ΔV/VSD
ISD
increasing VSD
for small fixed VG
ΔV/VSD
ISD
0.3mm/0.8mm = 0.375
0.3mm/0.8mm = 0.375
45
A. B. Eyvazov et al., Sci. Rep. 3, 1721 (2013)
normal
abnormal !
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
10-6
When increasing VG
not observed
ΔV/VSD
ISD
increasing VG
for any fixed VSD
ΔV/VSD
ISD
0.3mm/0.8mm = 0.375
0.3mm/0.8mm = 0.375
46
A. B. Eyvazov et al., Sci. Rep. 3, 1721 (2013)
Negative Differential Resistance
Proc. Phys. Soc. 82, 954 (1963)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
“Nonlinear…”
by E. Scholl,
Cambridge Univ. Press
(2001)
Negative Differential Resistance
increasing VSD
for small fixed VG
field domain!
47 i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
increasing VG
for any fixed VSD
current path!
ΔV/VSD
ISD
0.3mm/0.8mm = 0.375
ΔV/VSD
ISD
0.3mm/0.8mm = 0.375
48
A. B. Eyvazov et al., Sci. Rep. 3, 1721 (2013)
9. Numerical simulation: results
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
49
A. B. Eyvazov et al., Sci. Rep. 3, 1721 (2013)
Comparison of Exp & Calc
Experiment Calculation
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
10-6
50
A. B. Eyvazov et al., Sci. Rep. 3, 1721 (2013)
Simulation of path formation
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
51
A. B. Eyvazov et al., Sci. Rep. 3, 1721 (2013)
Schematic picture of channel
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
52
A. B. Eyvazov et al., Sci. Rep. 3, 1721 (2013)
High-k/Parylene/SrTiO3 FET
cleaner interface
filamentation
53
10. same S-shape I-V curves were observed
0 . 1 5
0 . 1
0 . 0 5
Hardly seen in Al2O3/SrTiO3
Al2O3/SrTiO3 has some amount
of carriers from the first
290 K
0 0 . 0 0 5 0 . 0 1 0 . 0 1 5
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014
0 . 6
0 . 4
0 . 2
0
V 12 ( V )
280 K
ID ( nA)
0 0 . 0 1 0 . 0 2 0 . 0 3 0 . 0 4
0
V 1 2 ( V )
180 K
220 K
210 K
200 K
I
D ( nA)
€
ΔV ≡V1 −V2
€
ΔV ≡V1 −V2
55
Parylene/SrTiO3 FET
Filamentation at 7K
H. Nakamura et al.,
Appl. Phys. Lett. 89, 133504 (2006)
1011 1012
h/e2=25.8kΩ
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/ 26
Seminar @ TITech, 16 July 2014 56
Filamentation Occurs
even at 7K!!
Then, what happens
at ultra-low T
superconductivity?
SC at LaAlO3/SrTiO3 interface
nonvolatile JC ~ 100μA/cm
S. Thiel et al., Science 313, 1942 (2006)
TC ~ 200mK
HC2 ~ 0.1T
N. Reyren et al., Science 317,
1196 (2007)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 5834
SC at electrolyte/SrTiO3 interface
TC ~ 400mK
HC2 ~ 0.1T
JC ~ 300μA/cm
K. Ueno et al., Nature Materials 7, 855 (2008)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 5934
SC of bulk SrTiO3-δ
M. Jourdan et al., Eur. Phys. J. B 33, 25 (2003)
TC ~ 140mK
HC2 ~ 0.3T
JC ~ 100A/cm2
~ 100μA/cm (for t10nm)
Good agreement in the orders with
!
1) SC at LaAlO3/SrTiO3 interface,
2) SC at electrolyte/SrTiO3 interface,
!
and
!
3) our gate-annealed SC
(next slide).
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 6033
11. SC in "gate-annealed" parylene/SrTiO3
31
Sample A
Al electrode
0.2
Voltage (mV)
0
SC was seen only after
1.4 1.8 2.2
Temperature (K)
VG threshold is lowered.
Nonvolatile metallic state.
Bulk-like superconductivity
due to oxygen vacancies?
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 61
TC ~ 350mK
HC2 ~ 0.1T
prolonged (one-day) application
of large VG
H. Nakamura et al., J. Phys. Soc. Jpn. 78, 083713 (2009).
Oxygen vacancy creation
on SrTiO3
M. Janousch et al., Adv. Mat. 19, 2232 (2007)
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 6232
0.2 mol% Cr-doped
SrTiO3
By applying 105V/cm
for about 30 min
Pt
Pt
Oxygen vacancies are created,
and distributed in the channel,
and form a metallic path.
All the superconductivity of
SrTiO3 interface shown here
might be caused by oxygen
defects…
Is this the conclusion? Is this the conclusion?
All the superconductivity of
SrTiO3 interface shown here
might be caused by oxygen
defects…
No. we observed another
39
Another “ ” State
Domain formation of doped carrier
and percolation transition
1011 1012
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/
Seminar @ TITech, 16 July 2014 65
is Fragile
·SC at electrolyte/SrTiO3 interface
·gate-annealed SC
·SC at LaAlO3/SrTiO3 interface
·bulk superconductivity
TC ~ 400mK
HC2 ~ 0.1T
JC ~ 300μA/cm
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/ 35
Seminar @ TITech, 16 July 2014 66
12. Summary
high-k/Parylene to
protect surface
zzz
Filamentation
i.inoue@aist.go.jp http://staff.aist.go.jp/i.inoue/ 36
Seminar @ TITech, 16 July 2014 67