This document summarizes a study on the photoelectrochemical properties of nanocrystalline indium selenide (In2Se3) thin films deposited via a chemical bath deposition method. The In2Se3 films exhibited n-type conductivity. Current-voltage measurements in the dark showed non-symmetrical rectifying behavior with a junction ideality factor of 3.85, suggesting the influence of series resistance and structural imperfections. Capacitance-voltage measurements determined a flat band potential of -0.530V versus saturated calomel electrode. Barrier height measurements from reverse saturation current at different temperatures yielded a barrier height. Under 30 mW/cm2 illumination, the cell demonstrated an open circuit voltage of 153mV
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
the effect of nickel incorporation on some physical properties of epoxy resinINFOGAIN PUBLICATION
The J-E characteristics of samples of epoxy resins mixed with nickel powder in different concentrations have been tested and a log-log straight line behaviour in both the low- and high field regions is observed. Ni-concentration has significant influence on the calculated constants of the J-E relationship. The d.c. electrical resistivity (ρ) of the samples are measured from the room temperature up to about 400 K. The variation of ρ with T obeys the exponential relation of ordinary dielectrics in three temperature regions. The parameters characterizing the ρ -T dependence change considerably with Ni-concentration. Due to the existence of nickel in different concentration a "true" compensation effect is observed with three characteristic compensation temperatures. The mechanical hardness of the samples was investigated as a function of Ni-concentration.
A Nano Capacitor Including Graphene Layers Composed with Doped Boron and Nitr...CrimsonPublishersRDMS
A Nano Capacitor Including Graphene Layers Composed with Doped Boron and Nitrogen by Majid Monajjemi* in Crimson Publishers: Peer Reviewed Material Science Journals
Modeling of Dirac voltage for highly p-doped graphene field-effect transistor...journalBEEI
In this paper, the modeling approach of Dirac voltage extraction of highly p-doped graphene field-effect transistor (GFET) measured at atmospheric pressure is presented. The difference of measurement results between atmospheric and vacuum pressures was analyzed. This work was started with actual wafer-scale fabrication of GFET with the purposes of getting functional device and good contact of metal/graphene interface. The output and transfer characteristic curves were measured accordingly to support on GFET functionality and suitability of presented wafer fabrication flow. The Dirac voltage was derived based on the measured output characteristic curve using ambipolar virtual source model parameter extraction methodology. The circuit-level simulation using frequency doubler circuit shows the importance of accurate Dirac voltage value to the device practicality towards design integration.
Amorphous-nano-crystalline silicon composite thin films (a-nc-Si:H) samples were synthesized by
Plasma Enhanced Chemical Vapor Deposition technique. The measurement of DC conductivities was
accomplished using Dielectric spectroscopy (Impedance Spectroscopy) in wide frequency and temperature range.
In analysis of impedance data, two approaches were tested: the Debye type equivalent circuit with two parallel R
and CPEs (constant phase elements) and modified one, with tree parallel R and CPEs including crystal grain
boundary effects. It was found that the later better fits to experimental results properly describes crystal grains
dielectric effect and hydrogen concentration indicating presence of strain. The amorphous matrix showed larger
resistance and lower capacity than nano-crystal phase. Also it was found that composite silicon thin film cannot
be properly described by equivalent circuit only with resistors and constant phase elements in serial relation
Electrochemical Supercapacitive Performance of Sprayed Co3O4 ElectrodesIJERA Editor
Nanocrystalline cobalt oxide (Co3O4) thin film electrodes were fabricated by spray pyrolysis method on conducting fluorine doped tin oxide (FTO) substrates using ammonia complexed with cobalt chloride (CoCl2. 6H2O) solution. The structural and morphological properties of Co3O4electrodes were studied using X-ray diffraction (XRD) and scanning electron microscopy (SEM).The surface morphology study showed the film formation of porous surface with clusters. The electrochemical supercapacitive properties ofCo3O4 electrodes were evaluated using cyclic voltammetry and galvanostatic charge-discharge method. The Co3O4electrodes showed maximum specific capacitance of 168 F/g in 1 M aqueous KOH electrolyte at the scan rate of 20 mV/s. The maximum specific energy and specific power of the cell are 2.2Wh/kg and 0.23 kW/kg, respectively.
An Improved Regression Type Estimator of Finite Population Mean using Coeffic...inventionjournals
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
Inventory Model with Different Deterioration Rates with Stock and Price Depen...inventionjournals
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
IJERA (International journal of Engineering Research and Applications) is International online, ... peer reviewed journal. For more detail or submit your article, please visit www.ijera.com
the effect of nickel incorporation on some physical properties of epoxy resinINFOGAIN PUBLICATION
The J-E characteristics of samples of epoxy resins mixed with nickel powder in different concentrations have been tested and a log-log straight line behaviour in both the low- and high field regions is observed. Ni-concentration has significant influence on the calculated constants of the J-E relationship. The d.c. electrical resistivity (ρ) of the samples are measured from the room temperature up to about 400 K. The variation of ρ with T obeys the exponential relation of ordinary dielectrics in three temperature regions. The parameters characterizing the ρ -T dependence change considerably with Ni-concentration. Due to the existence of nickel in different concentration a "true" compensation effect is observed with three characteristic compensation temperatures. The mechanical hardness of the samples was investigated as a function of Ni-concentration.
A Nano Capacitor Including Graphene Layers Composed with Doped Boron and Nitr...CrimsonPublishersRDMS
A Nano Capacitor Including Graphene Layers Composed with Doped Boron and Nitrogen by Majid Monajjemi* in Crimson Publishers: Peer Reviewed Material Science Journals
Modeling of Dirac voltage for highly p-doped graphene field-effect transistor...journalBEEI
In this paper, the modeling approach of Dirac voltage extraction of highly p-doped graphene field-effect transistor (GFET) measured at atmospheric pressure is presented. The difference of measurement results between atmospheric and vacuum pressures was analyzed. This work was started with actual wafer-scale fabrication of GFET with the purposes of getting functional device and good contact of metal/graphene interface. The output and transfer characteristic curves were measured accordingly to support on GFET functionality and suitability of presented wafer fabrication flow. The Dirac voltage was derived based on the measured output characteristic curve using ambipolar virtual source model parameter extraction methodology. The circuit-level simulation using frequency doubler circuit shows the importance of accurate Dirac voltage value to the device practicality towards design integration.
Amorphous-nano-crystalline silicon composite thin films (a-nc-Si:H) samples were synthesized by
Plasma Enhanced Chemical Vapor Deposition technique. The measurement of DC conductivities was
accomplished using Dielectric spectroscopy (Impedance Spectroscopy) in wide frequency and temperature range.
In analysis of impedance data, two approaches were tested: the Debye type equivalent circuit with two parallel R
and CPEs (constant phase elements) and modified one, with tree parallel R and CPEs including crystal grain
boundary effects. It was found that the later better fits to experimental results properly describes crystal grains
dielectric effect and hydrogen concentration indicating presence of strain. The amorphous matrix showed larger
resistance and lower capacity than nano-crystal phase. Also it was found that composite silicon thin film cannot
be properly described by equivalent circuit only with resistors and constant phase elements in serial relation
Electrochemical Supercapacitive Performance of Sprayed Co3O4 ElectrodesIJERA Editor
Nanocrystalline cobalt oxide (Co3O4) thin film electrodes were fabricated by spray pyrolysis method on conducting fluorine doped tin oxide (FTO) substrates using ammonia complexed with cobalt chloride (CoCl2. 6H2O) solution. The structural and morphological properties of Co3O4electrodes were studied using X-ray diffraction (XRD) and scanning electron microscopy (SEM).The surface morphology study showed the film formation of porous surface with clusters. The electrochemical supercapacitive properties ofCo3O4 electrodes were evaluated using cyclic voltammetry and galvanostatic charge-discharge method. The Co3O4electrodes showed maximum specific capacitance of 168 F/g in 1 M aqueous KOH electrolyte at the scan rate of 20 mV/s. The maximum specific energy and specific power of the cell are 2.2Wh/kg and 0.23 kW/kg, respectively.
An Improved Regression Type Estimator of Finite Population Mean using Coeffic...inventionjournals
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
Inventory Model with Different Deterioration Rates with Stock and Price Depen...inventionjournals
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
On Estimation of Population Variance Using Auxiliary Informationinventionjournals
International Journal of Mathematics and Statistics Invention (IJMSI) is an international journal intended for professionals and researchers in all fields of computer science and electronics. IJMSI publishes research articles and reviews within the whole field Mathematics and Statistics, new teaching methods, assessment, validation and the impact of new technologies and it will continue to provide information on the latest trends and developments in this ever-expanding subject. The publications of papers are selected through double peer reviewed to ensure originality, relevance, and readability. The articles published in our journal can be accessed online.
The latest statistics from WeChat place its monthly active users (MAU) at 700million, with audiences visiting the application upwards of 30 times per day.
While follower numbers for most brands continue to grow, the honeymoon appears to be over. Signs are starting to emerge that follower growth rates for brand accounts are slowing.
At the same time, the government has started to apply pressure to regulate H5 apps built onto WeChat. And Tencent itself is applying greater control over brand activities.
Brands will have to employ more effective content strategies on WeChat moving forward. In this presentation we share our tips to help brands continue to grow by attracting/retaining audiences on WeChat.
It’s not enough that you drink water every day. You have to make sure it’s the adequate amount and it’s absolutely safe and clean. To be guaranteed about your everyday drinking water, it would be a good idea buy water filter here in Singapore or anywhere you might be in the world.
20 Ideas for your Website Homepage ContentBarry Feldman
Perplexed about what to put on your website home? Every company deals with this tough challenge. The 20 ideas in this presentation should give you a strong starting point.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Electrical transport properties of nanocrystalline and bulk nickel.pdfProximaCentauri15
In this work, the comparative study on the electrical transport properties of nanocrystalline nickel
ferrite (NiFe2O4) and its bulk counterpart has been carried out in detail by using complex impedance
spectroscopy in a wide range of frequencies (100 Hz–1 MHz) and temperatures (40 °C–320 °C). The
dispersive nature of the dielectric constant and loss factor is explained by the Maxwell-Wagner model
and Koop’s phenomenological theory. The value of the dielectric constant for nanocrystalline nickel
ferrite is found to be more as compared to its bulk counterpart. The frequency variation dielectric
permittivity is well fitted with the modified Debye formula, which suggests the presence of multiple
relaxation processes. The temperature dependent ac conductivity follows Jonscher’s universal power
law and reveals the presence of multiple transport mechanisms from small polaron hopping (SPH) to
correlated barrier hopping (CBH) mechanism near 200 °C. The estimated values of Mott parameters
are found to be satisfactory. Thermally activated relaxation phenomena have been confirmed by
scaling curves of imaginary impedance (Z) andmodulus (M). The comparison between the Z and
M spectra indicates that both long-range and short-rangemovement of charge carriers contribute to
dielectric relaxation with short-range charge carriers predominating at low temperatures while longrange
charge carriers are dominating at high temperatures. Analysis of the semicircular arcs of Nyquist
plot indicates the presence of grain boundary contribution to the electrical conduction process for the
nanocrystalline sample at high temperatures. The non-Debye type of relaxation has been examined by
stretching exponential factor (β) which has been estimated by fitting the modifiedKWW
(Kohlrausch-Williams-Watts) equation to the imaginary electric modulus curve. The value of β is
found to be strongly temperature dependent and its value for the nanocrystalline sample is less than
that of the bulk system which is explained on the basis of dipole-dipole interaction.
Impact of CuS counter electrode calcination temperature on quantum dot sensit...TELKOMNIKA JOURNAL
In place of the commercial Pt electrode used in quantum sensitized solar cells, the low-cost CuS cathode is created using electrophoresis. High resolution scanning electron microscopy and X-ray diffraction were used to analyze the structure and morphology of structural cubic samples with diameters ranging from 40 nm to 200 nm. The conversion efficiency of solar cells is significantly impacted by the calcination temperatures of cathodes at 100 °C, 120 °C, 150 °C, and 180 °C under vacuum. The fluorine doped tin oxide (FTO)/CuS cathode electrode reached a maximum efficiency of 3.89% when it was calcined at 120 °C. Compared to other temperature combinations, CuS nanoparticles crystallize at 120 °C, which lowers resistance while increasing electron lifetime.
In place of the commercial Pt electrode used in quantum sensitized solar cells, the low-cost CuS cathode is created using electrophoresis. High resolution scanning electron microscopy and X-ray diffraction were used to analyze the structure and morphology of structural cubic samples with diameters ranging from 40 nm to 200 nm. The conversion efficiency of solar cells is significantly impacted by the calcination temperatures of cathodes at 100 °C, 120 °C, 150 °C, and 180 °C under vacuum. The fluorine doped tin oxide (FTO)/CuS cathode electrode reached a maximum efficiency of 3.89% when it was calcined at 120 °C. Compared to other temperature combinations, CuS nanoparticles crystallize at 120 °C, which lowers resistance while increasing electron lifetime.
Studies on in-Doped Zno Transparent Conducting thin FilmsIJRESJOURNAL
ABSTRACT: In this manuscript we have investigated the influences of indium dopants on zinc oxide (ZnO) thin films regarding physico-chemical properties for application in modern conducting devices. As a starting material, Indium (III) chloride, and Zn(CH3COO)2⋅2H2O were used. The complex TSDC spectrum was obtained by submitting the sample to a constant electrical field Ep = 10M V/m during 2 min at a varing polarization temperature of Tmax = 1500C. A minimal sheet resistance with electrical resistivity as low in the range of 10-3 Ω·cm was found for this thin film.
Zno and znopbs heterojunction photo electrochemical cellseSAT Journals
Abstract Photo Electrochemical Cell (PEC) can also be used for splitting of water into hydrogen and Oxygen. Here, ZnO nanorod PEC has been prepared in hydrothermal method and ZnO/PbS quantum dot PEC has been prepared by hydrothermal method and chemical bath deposition method. UV-Visible spectroscopy has been observed. Flat band voltage, bandwidth and majority charge carriers have been calculated from Mott-Schottky. Impedance variation at semiconductor and electrolyte junction has been observed with Electrochemical Impedance Spectroscopy (EIS). Keywords: Hydrothermal, Chemical bath, ZnO/PbS, UV-Vis, Mott-Schottky, EIS.
Enhancing Electrochemical Performance of V2O5 Thin Film by using Ultrasonic W...iosrjce
IOSR Journal of Applied Physics (IOSR-JAP) is a double blind peer reviewed International Journal that provides rapid publication (within a month) of articles in all areas of physics and its applications. The journal welcomes publications of high quality papers on theoretical developments and practical applications in applied physics. Original research papers, state-of-the-art reviews, and high quality technical notes are invited for publications.
The single crystal of MoSe2 grown by
chemical vapour transport (CVT)technique are used for the
fabrication of Photoelectro chemical (PEC) solar cells. The
effect of the illumination intensity on the conversion efficiency
of the fabricated PEC solar cell is studied.
and Heat. The smoke sensors function by
detecting the presence of smoke particles either in a
photoelectric chamber or in an ionization chamber.
These sensors being placed on the ceiling Fire is seldom
detected in the incipient stage.
Loss due to fire damage not only accounts for
equipment and property destruction, but also loss of
data, interruption of service, cleanup and recovery cost.
On an average about $250,000 per incident.
The key to control these damages are not only
to detect fire as early as possible but also identify
exactly the origin of incident. All over the world the
latest technologies are being tested upon and
implemented to detect the fire at early stage. However
these require expensive proprietary solutions and may
not be easily deployable in existing infrastructure.
Technologies do exist today to detect fire at an
early stage but are expensive in nature and requires
pre-engineered planed deployment.
This paper demonstrates means to detect the
fire instantly and extinguished at initial stage. An
autonomous robot equipped with advanced fire
detection technology detect fire at initial stage,
extinguished by small conceived extinguisher, sound
hooter and also send message to pre assigned number
through GSM modem. A novel approach using color
sensor TCS3200 and simple LDR (Light Dependent
Register) makes the system highly cost effective. It is
effectively a fire surveillance system that continuously
read sensor values and received data are processed by
various complex algorithms to ensure fire detection
with highly reduced false alarm and immediate action.
It also covers a large area and thus the system costs are
minimized. It is highly useful for domestics as well as
industrial environment. The total system cost is less
than $200.
It is important to note that electrical supplies
must be cut down in case of a fire incident and thus also
takes the fire detection system offline. This system being
self-sufficient and battery powered can still function.
Electrochemical performance of supercapacitor with glass wool separator under...journalBEEI
The paper presents the electrochemical performance of supercapacitor with glass wool separator under organic electrolyte of tetraethylammonium tetrafluoroborate (TEABF4). The performance was evaluated using symmetrical two-electrode system and compared to an identical supercapacitor with commercially available cellulose paper separator under 1 M TEABF4. The application of glass wool separator reduces the bulk resistance of supercapacitor by 19.6%, promotes more efficient ions transfer across active surface of electrode and significantly improves specific capacitance by 19.1% compared to cellulose paper. The application of higher concentration TEABF4 (1.5 M) even improves the overall performance of glass wool-based supercapacitor by 32.2% reduction of bulk resistance and 61.9% increment in specific capacitance compared to 1 M TEABF4. In addition, the energy and power densities are significantly improved by 64% and 165%, respectively for the one with 1.5 M TEABF4. In general, the low-cost material glass wool material has great potential to replace commercially available cellulose paper as separator in developing much better supercapacitor.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Device simulation of perovskite solar cells with molybdenum disulfide as acti...journalBEEI
Organo-halide Perovskite Solar Cells (PSC) have been reported to achieve remarkably high power conversion efficiency (PCE). A thorough understanding of the role of each component in solar cells and their effect as a whole is still required for further improvement in PCE. In this paper, the effect of Molybdenum Disulfide (MoS2) in PSC with mesoporous structure configuration was analyzed using Solar Cell Capacitance Simulator (SCAPS). With the MoS2 layer which having two-fold function, acting as a protective layer, by preventing the formation of shunt contacts between perovskite and Au electrode, and as a hole transport material (HTM) from the perovskite to the Spiro-OMETAD. As simulated, PSC demonstrates a PCE, ŋ of 13.1%, along with stability compared to typical structure of PSC without MoS2 (Δ ŋ/ŋ=-9% vs. Δ ŋ/ŋ=-6%). The results pave the way towards the implementation of MoS2 as a material able to boost shelf life which very useful for new material choice and optimization of HTMs
Study of Microstructural, Electrical and Dielectric Properties of La0.9Pb0.1M...Scientific Review SR
The present work studies the microstructural and electrical properties of La0.9Pb0.1MnO3 and La0.8Y0.1Pb0.1MnO3 ceramics synthesized by solid-state route method. Microstructure and elemental analysis of both samples were carried out by field emission scanning electron microscope (FESEM) and energy dispersive spectroscopy (EDS) method, respectively. Phase analysis by X-ray diffraction (XRD) indicated formation of single phase distorted structure. The XRD data were further analyzed by Rietveld refinement technique. Raman analysis reveals that Y atom substitutes La site into the LPMO with shifting of phonon modes. The temperature variation of resistivity of undoped and Y-doped La0.9Pb0.1MnO3 samples have been investigated. The electrical resistivity as a function of temperature showed that all samples undergo an metal-insulator (M-I) transition having a peak at transition temperature TMI. Y-doping increases the resistivity and the metal-insulator transition temperature (TMI) shifts to lower temperature. The temperature-dependent resistivity for temperatures less than metal-insulator transition is explained in terms the quadratic temperature dependence and for T > TMI, thermally activated conduction (TAC) is appropriate. Variation of frequency dispersion in permittivity and loss pattern due to La-site substitution in LPMO was observed in the dielectric response curve.
International Journal of Engineering Research and Applications (IJERA) is an open access online peer reviewed international journal that publishes research and review articles in the fields of Computer Science, Neural Networks, Electrical Engineering, Software Engineering, Information Technology, Mechanical Engineering, Chemical Engineering, Plastic Engineering, Food Technology, Textile Engineering, Nano Technology & science, Power Electronics, Electronics & Communication Engineering, Computational mathematics, Image processing, Civil Engineering, Structural Engineering, Environmental Engineering, VLSI Testing & Low Power VLSI Design etc.
Resonant-tunneling-diode effect in Si-based double-barrier structure sputtere...IJRES Journal
This paper presents the resonant-tunneling-diode (RTD) effect in a SiO2/n-Si/SiO2/p-Si double-barrier structural thin films fabricated using radio frequency (RF) magnetron sputtering at room temperature (300 K). The implementation of a circuit prototype is first accomplished by modulating a Si-based RTD with a solar-cell bias voltage. The important electrical properties of the peak current density and peak-to-valley current ratio (PVCR) are 184 nA/cm2 and 1.67, respectively. The connection between the two RTDs in series is biased by a solar cell. The value of the switching transition time is 24.37 μs; oscillation occurs with an operating frequency of 41.6 KHz. In semiconductor applications, the developed RTD is characterized by stability, enduring environmentally elevated temperature and relative humidity.
Pandey S, White M. "Detection of dielectrophoretic driven passage of single cells through micro-apertures in a silicon nitride membrane".
Conf Proc IEEE Eng Med Biol Soc. 2004;2004:1956-9.
doi: 10.1109/IEMBS.2004.1403578. PMID: 17272098.
https://ieeexplore.ieee.org/document/1403578
Dev Dives: Train smarter, not harder – active learning and UiPath LLMs for do...UiPathCommunity
💥 Speed, accuracy, and scaling – discover the superpowers of GenAI in action with UiPath Document Understanding and Communications Mining™:
See how to accelerate model training and optimize model performance with active learning
Learn about the latest enhancements to out-of-the-box document processing – with little to no training required
Get an exclusive demo of the new family of UiPath LLMs – GenAI models specialized for processing different types of documents and messages
This is a hands-on session specifically designed for automation developers and AI enthusiasts seeking to enhance their knowledge in leveraging the latest intelligent document processing capabilities offered by UiPath.
Speakers:
👨🏫 Andras Palfi, Senior Product Manager, UiPath
👩🏫 Lenka Dulovicova, Product Program Manager, UiPath
Smart TV Buyer Insights Survey 2024 by 91mobiles.pdf91mobiles
91mobiles recently conducted a Smart TV Buyer Insights Survey in which we asked over 3,000 respondents about the TV they own, aspects they look at on a new TV, and their TV buying preferences.
LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
Do you want to learn how to model and simulate an electrical network from scratch in under an hour?
Then welcome to this PowSyBl workshop, hosted by Rte, the French Transmission System Operator (TSO)!
During the webinar, you will discover the PowSyBl ecosystem as well as handle and study an electrical network through an interactive Python notebook.
PowSyBl is an open source project hosted by LF Energy, which offers a comprehensive set of features for electrical grid modelling and simulation. Among other advanced features, PowSyBl provides:
- A fully editable and extendable library for grid component modelling;
- Visualization tools to display your network;
- Grid simulation tools, such as power flows, security analyses (with or without remedial actions) and sensitivity analyses;
The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
What you will learn during the webinar:
- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
Neuro-symbolic is not enough, we need neuro-*semantic*Frank van Harmelen
Neuro-symbolic (NeSy) AI is on the rise. However, simply machine learning on just any symbolic structure is not sufficient to really harvest the gains of NeSy. These will only be gained when the symbolic structures have an actual semantics. I give an operational definition of semantics as “predictable inference”.
All of this illustrated with link prediction over knowledge graphs, but the argument is general.
Epistemic Interaction - tuning interfaces to provide information for AI supportAlan Dix
Paper presented at SYNERGY workshop at AVI 2024, Genoa, Italy. 3rd June 2024
https://alandix.com/academic/papers/synergy2024-epistemic/
As machine learning integrates deeper into human-computer interactions, the concept of epistemic interaction emerges, aiming to refine these interactions to enhance system adaptability. This approach encourages minor, intentional adjustments in user behaviour to enrich the data available for system learning. This paper introduces epistemic interaction within the context of human-system communication, illustrating how deliberate interaction design can improve system understanding and adaptation. Through concrete examples, we demonstrate the potential of epistemic interaction to significantly advance human-computer interaction by leveraging intuitive human communication strategies to inform system design and functionality, offering a novel pathway for enriching user-system engagements.
GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
Speakers:
Bob Boule
Robert Boule is a technology enthusiast with PASSION for technology and making things work along with a knack for helping others understand how things work. He comes with around 20 years of solution engineering experience in application security, software continuous delivery, and SaaS platforms. He is known for his dynamic presentations in CI/CD and application security integrated in software delivery lifecycle.
Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
Software Delivery At the Speed of AI: Inflectra Invests In AI-Powered QualityInflectra
In this insightful webinar, Inflectra explores how artificial intelligence (AI) is transforming software development and testing. Discover how AI-powered tools are revolutionizing every stage of the software development lifecycle (SDLC), from design and prototyping to testing, deployment, and monitoring.
Learn about:
• The Future of Testing: How AI is shifting testing towards verification, analysis, and higher-level skills, while reducing repetitive tasks.
• Test Automation: How AI-powered test case generation, optimization, and self-healing tests are making testing more efficient and effective.
• Visual Testing: Explore the emerging capabilities of AI in visual testing and how it's set to revolutionize UI verification.
• Inflectra's AI Solutions: See demonstrations of Inflectra's cutting-edge AI tools like the ChatGPT plugin and Azure Open AI platform, designed to streamline your testing process.
Whether you're a developer, tester, or QA professional, this webinar will give you valuable insights into how AI is shaping the future of software delivery.
Kubernetes & AI - Beauty and the Beast !?! @KCD Istanbul 2024Tobias Schneck
As AI technology is pushing into IT I was wondering myself, as an “infrastructure container kubernetes guy”, how get this fancy AI technology get managed from an infrastructure operational view? Is it possible to apply our lovely cloud native principals as well? What benefit’s both technologies could bring to each other?
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Welcome to UiPath Test Automation using UiPath Test Suite series part 4. In this session, we will cover Test Manager overview along with SAP heatmap.
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2. Heatmap utilization for testing
3. Optimization of testing processes
4. Demo
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Orchestrator execution result
Defect reporting
SAP heatmap example with demo
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UiPath Test Automation using UiPath Test Suite series, part 4
J0262058062
1. International Journal of Engineering Science Invention
ISSN (Online): 2319 – 6734, ISSN (Print): 2319 – 6726
www.ijesi.org Volume 2 Issue 6 ǁ June. 2013 ǁ PP.58-62
www.ijesi.org 58 | Page
Photoelectrochemical Study of Chemically Deposited
Nanocrystalline Indium Selenide Thin Film
M.R.Asabe1
, V.P.Ubale2
and P.P.Hankare3
1
Department of Chemistry, Walchand College of Arts and Science, Solapur – 413 006 (India).
2
Dept. of Chemistry, D.B.F. Dayanand College of Arts and Science, Solapur – 413 006 India).
3
Department of Chemistry, Shivaji University, Kolhapur – 416 004 (India).
ABSTRACT: Nanocrystalline In2Se3 films have been synthesized by chemical bath deposition method by
using Indium sulphate, tartaric acid, ammonia and sodium selenosulphate onto stainless steel substrate. The cell
configuration is n-In2Se3-NaOH (1M)-S (1M) - Na2S (1M) -C (graphite). The photoelectrochemical characterization
of the films is carried out by studying electrical and optical characterization. These studies indicates that the
In2Se3 thin films are n-type in conductivity.
KEYWORDS: Thin Film, Chemical bath deposition, Photoelectrochemical cell, fill factor, Spectral response.
I. INTRODUCTION
The Photoelectrochemical energy conversions which are attained by understanding and optimizing
solution phase phenomenon. The properties of such systems are critically dependent on the interface formed
between the semiconductor and the electrolyte; hence from the material science point of view, the
microstructure of semiconductor surface is of main importance. Since any practical application of solar energy
conversion has to rely on polycrystalline semiconductor films, the electrode behavior of such layers developed
by soft growth technique like chemical bath deposition has to be determined in detail [1- 3].
The alternative method was searched because the usual solar cells are manufactured from highly pure
and perfect crystalline materials & p-n junction is obtained by using sophisticated technology. For this reason
they are quite costly. Simple in construction, absence of lattice mismatch, possibility of adjustment of Fermi
level by suitably choosing redox electrolyte, no requirement of coating are the advantage of these cells.
Semiconductor electrolyte interface may be used for photoelectrolysis, photocatalysis & photoelectrochemical
power generation. [4-5] The direct conversion of solar energy into electrical current using semiconductor-
electrolyte interface was first demonstrated by Gerischer & Eills.[6-7] Since then a large number of metal as
well as mixed chalcogenide & oxides have been used as photoelectrode in PEC cells. The stability & efficiency
of PEC cells are mainly dependent on preparation conditions for photoelectrode, electrolyte & experimental
conditions set during the experiment. [8] Determination of electronic parameters of these semiconducting thin
films is essential in testing their suitability. PEC cell provide an economical chemical route for trapping solar
cells. It consists of a photosensitive n-or-p- type semiconductor electrode & a counter electrode dipped in a
suitable electrolyte. Binary & ternary chalcogenide semiconductors of II-VI have received widespread interest
in the field of PEC. Single crystals as well as polycrystalline thin films are giving good response.
In the presentation investigation, we describe the photoelectrochemical performance of In2Se3 thin film.
I-V, C-V characteristics in dark, power output curves and barrier height measurements study.
II. EXPERIMENTAL DETAILS
2.1 Preparation of In2Se3 photoelectrode
The deposition of In2Se3 thin films was made in a reactive solution obtained by mixing 10 ml (0.02M)
indium trichloride, 2.5 ml (1M) tartaric acid, 10 ml (10%) hydrazine hydrate and 20 ml (0.25M) sodium
selenosulphate. The total volume of the reactive mixture was made upto 100 ml by adding double distilled
water. The beaker containing the reactive solution was transferred to an ice bath at 278 K temperature. The pH
of the resulting solution was found to be 11.80±0.05. To obtain the film, four FTO glass substrate were
positioned vertically on a specially designed substrate holder and rotated in a reactive solution with a speed of
55±2 rpm [9]. The temperature of the solution was then allowed to rise slowly to 293K. The substrates were
subsequently removed from the beaker after 2 hours of deposition. The films obtained were washed with
distilled water, dried in air and kept in a desiccator.
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2.2 Fabrication of PEC Cell
It consists of H-shaped glass tube. One of the arms of the tube was made from hard glass having
diameter of size 2.7 cm and length 7 cm and other is ordinary test tube of inner diameter 1.5 cm and length 7
cm. This H-shaped glass container was fitted in a copper pot. A window having the dimension of 2 cm x 1.5 cm
was made available for illumination of the photoelectrode. The cell can be represented as
n- In2Se3 | NaOH (1M) + S (1M) + Na2S (1M) | C (graphite)
Counter electrode is constructed by using a graphite rod sensitized in a medium containing
concentrated CoS solution for 24 hours. A rubber cork was used to make the cell air tight and to support both
the counter and photoelectrode. The active area of the size 1 x 1 cm2
was exposed to light. The remaining part of
the film was masked by the use of common epoxy resin.
2.3 Characterization of PEC Cell
To study the charge transfer mechanism occurring across the semiconductor electrolyte interface, the
electrical characterization of the PEC cell was tested. I-V, C-V characteristics in dark, measurement of built-in-
potential & power output characteristics under illumination were studied. A wire wound potentiometer was used
to vary the voltage across the junction & current flowing through the junction was measured with a current
meter. The same circuit was used to determine the capacitance of the junction. The barrier height was examined
from temperature dependence of reverse saturation current at different temperature; the lighted ideality factor
was calculated. The junction ideality for all the cells were determined by plotting the graph of log I versus V.
Photoelectrochemical activities were studied under 30 mW/cm2
light illumination. The illumination intensity
was measured with Meco Lux meter.
III. RESULT & DISCUSSION
3.1. Conductivity type
A PEC cell with configuration n-In2Se3|NaOH (1 M) + S(1 M) +Na2S(1M)|C(graphite) was formed. Even
in the dark, PEC cell shows dark voltage and dark current. The polarity of this dark voltage was negative
towards semiconductor electrode. The sign of the photovoltage gives the conductivity type of In2Se3. This
suggests that In2Se3 is a n-type conductor which has also been proved from TEP measurement studies [10].
3.2. I–V characteristics in dark
Current–voltage (I–V) characteristics of PEC cell in dark have been studied at 303K and shown in
Fig. 1. The characteristics are non-symmetrical indicating the formation of rectifying type junction [11]. The
junction ideality factor (nd) can be determined from the plot of log I with voltage and the variation is shown in
Fig. 2. The ideality factor was found to be 3.85 which is higher than earlier reported 1.30 [12-13]. The higher
value of nd suggests the dominance of series resistance as well as structural imperfection. It also suggests that
average transfer across the semiconductor electrolyte interface with significant contribution from surface states
and deep traps [14,15].
3.3. C–V characteristics in dark
The measurements of capacitance as a function of applied voltage provided useful information such as
type of conductivity, depletion layer width and flat band potential (Vfb). The flat band potential of a
semiconductor gives information of the relative position of the Fermi levels in photoelectrode as well as the
influence of electrolyte and charge transfer process across the junction. This is also useful to measure the
maximum open circuit voltage (Voc) that can be obtained from a cell. Measured capacitance is the sum of the
capacitance due to depletion layers and Helmholtz layer in electrolyte which is neglected by assuming high
ionic concentration [16-20]. The variation of voltage for representative samples is shown in Fig. 3. Intercepts of
plots on voltage axis determine the flat band potential value of the junction. The flat band potential value found
to be −0.530V (SCE) for In2Se3–polysulphide redox electrolyte, which is a measure of electrode potential at
which band bending is zero. The non-linear nature of the graph is an indication of graded junction formation
between In2Se3and polysulphide electrolyte. Non-planar interface, surface roughness, ionic adsorption on the
photoelectrode surface may be possible reasons for deviation from linearity in C–V plot.
3.1.3 Barrier-height Measurement
The barrier-height was determined by measuring the reverse saturation current (Io) through the
junction at different temperature from 363 to 303 K. the reverse saturation current flowing through junction is
related to temperature as [21, 22];
Io = AT2
exp (Φβ / kT) -----------------------------------3.5
3. Photoelectrochemical study of chemically deposited…
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Where A is Richardson constant, k is Boltzmann constant, Φβ is the barrier height in eV. To determine
the barrier-height of the photoelectrode, a graph of log (Io/T2
) with 1000/T was plotted. The plot of log (Io/T2
)
with 1000/T for representative sample is shown in Fig. 4. From the slope of the linear region of plots, the
barrier height was determined.
3.1.4 Power Output Characteristics
Fig. 5 shows the photovoltaic power putout characteristics for a cell under illumination of 30 mW/cm2.
The maximum power output of the cell is given by the largest rectangle that can be drawn inside the curve. The
open circuit voltage and short circuit current are found to be 153mV and 20_A, respectively. The calculation
shows the fill factor is 29.41%. The power conversion efficiency is found to be 0.13%. The low efficiency may
be due high series resistance and interface states which are responsible for recombination mechanism. The value
of series resistance and shunt resistance were found to be 1.941 k_ and 1.452 k_, respectively. The main
drawback in utilizing PEC cell is the absence of space change region at the photoelectrode–electrolyte interface.
In this situation, the photogenerated charge carriers can move in both the direction. Lu and Kamat [23] reported
that the photogenerated electrons in n-type material either recombine readily with holes or leak out into the
electrolyte, instead of flowing through external circuit.
ηmax = (Vredox-Vfb) (e/Eg) -----------------------3.6
where Vfb is flat band potential, Vredox is the redox potential and Eg is the energy band gap [24-25].
IV. CONCLUSIONS
Indium selenide photoelectrode can be deposited by using Indium sulphate heptahydrate, tartaric acid,
ammonia, hydrazine hydrate and sodium selenosulphite onto stainless steel plate. The photoelectrochemical cell
can be easily fabricated using In2Se3 photoanode, sulphide–polysulphide as electrolyte, CoS-treated graphite rod
as a counter electrode. A saturated calomel electrode was used a reference electrode. The various performance
parameters were determined for In2Se3 photoelectrode.
REFERENCES
[1] S. Dass, Y.S. Chaudhary, M. Agrawal, A. Shrivastav, R. Shrivastav, V.R. Sarsangi, Ind. J. Phys. 78 (2004) 229.
[2] S.S. Kale, R.S. Mane, C.D. Lokhande, K.C. Nandi, S. Han, Mater. Sci. Eng., B 133 (2006) 222.
[3] M. Bouroushain, D. Karoussos, T. Kosanovic, Solid State Ionics 177 (2006) 1855.
[4] M.T.Gurierrez, J.Ortega, Sol. Ener. Mater., 20 (1990) 387.
[5] P.J.Holes, “The Electrochemistry of Semiconductors”, Academic Press,
[6] (1992).
[7] H.Gerischer, Electrochem., 58 (1975) 263.
[8] A.D.Eills, S.W.Kaiser, M.S.Wrighton, J. Phys. Chem., 80 (1976) 1325.
[9] C.D.Lokhande, Solar Cells, 22 (1987) 133.
[10] V.V.Killedar, C.D.Lokhande, C.H.Bhosale, Ind. J. Pure Appl. Phys., 36
[11] (1998) 643.
[12] D.Das, Proc. Conf. Phys. & Tech. Semiconductor Dev. Interg.
[13] Circuits, 1523 (1992) 323.
[14] Darkowski, A. Grabowski, Sol. Ener. Mater., 23 (1989) 75.
[15] L.P.Deshmukh, Ind. J. Pure Appl. Phys., 36 (1998) 302.
[16] A.M.A.Dhafiri, A.A.I.Al-Bassam, Sol. Ener. Mat. Sol. Cells, 33
[17] (1994) 177.
[18] M.A.Butler, J. Appl. Phys., 48 (1977) 1914.
[19] A.Aruchami, G. Aravamudan, G.V.Subba Rao, Bull. Mater. Sci., 4
[20] (1982) 483.
[21] K.Y.Rajpure, S.M.Bamane, C.D.Lokhande, C.H.Bhosale, Ind. J. Pure
[22] Appl. Phys., 37 (199) 413.
[23] D.Lue, P.Kamat, J. Phys.Chem., 97 (1993) 1073.
[24] H.Gerischer, Electro. Anal. Chem., 150 (1983) 553.
[25] P.P.Hankare, P.A.Chate, M.R.Asabe, S.D.Delekar, I.S.Mulla, K.MGaradkar, J. Mater Sci: Mater Electron., 17(2006) 1055.
Figure Caption:
Fig. 1. I–V characteristics of In2Se3 photoelectrode (in dark).
Fig. 2. Determination of junction ideality factor of In2Se3 photoelectrode.
Fig. 3. C–V characteristics of In2Se3 photoelectrode.
Fig. 4. Determination of barrier height measurement of In2Se3 photoelectrode.
Fig. 5. Power output curves for In2Se3 photoelectrode.
4. Photoelectrochemical study of chemically deposited…
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Fig. 1. I–V characteristics of In2Se3 photoelectrode (in dark).
Fig. 2. Determination of junction ideality factor of In2Se3 photoelectrode.
Fig. 3. C–V characteristics of In2Se3 photoelectrode.
5. Photoelectrochemical study of chemically deposited…
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Fig. 4. Determination of barrier height measurement of In2Se3 photoelectrode.
Fig. 5. Power output curves for In2Se3 photoelectrode.