The document summarizes the growth and characterization of In2Se3 nanowires for potential use in photovoltaic cells. The author grew nanowires using the vapor-liquid-solid method with indium selenide powder and found that ideal growth parameters included a pressure of 1.0-1.5 Torr, a substrate temperature of 640°C, and a powder temperature of 825°C. Characterization with SEM and EDX showed uniform nanowires 45-55nm in diameter. Future work will involve optical characterization to determine the nanowires' absorption efficiency and electron-hole recombination time.