This document outlines the syllabus for the course EC2354 - VLSI Design taught at A.R. Engineering College in Villupuram, India. The course is divided into 5 units that cover topics such as CMOS technology, circuit characterization and simulation, combinational and sequential circuit design, CMOS testing, and specification using Verilog HDL. Some of the major questions addressed in each unit include deriving the DC characteristics of a CMOS inverter, explaining CMOS fabrication technologies, latch-up prevention techniques, MOSFET operation, and Verilog timing controls. The document also provides several examples of questions that would be covered in the course assessments.
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VLSI technology development nowadays is mostly focused on the downsizing of semiconductor devices, which is significantly reliant on advancements in complementary metal-oxide-semiconductor technology. Due to capacitance, shorter channel length, body biassing, faster-switching transistor, limited variability, and faster running transistor, Silicon-on-Insulator technology has seen a lot of changes. In comparison to traditional bulk technology, Silicon on Insulator offers intriguing new possibilities. The recent stalling of advancement in CMOS technology has been noticed. A fully depleted silicon on the insulator provides additional performance. Power usage and communication speed are two areas where performance can be improved. Silicon on insulator technology has the potential to reduce power consumption by nearly half while increasing speed by about 40%. Using the Atlas module of the SILVACO software, the research presents a comprehensive analysis of silicon on insulator-based nano metal oxide semiconductor field-effect transistors. Atlas is used to virtually construct a 20 nm silicon on insulator MOSFET. The gate metals employed are Aluminum, N. poly, W (Tungsten), and WSi2 (Tungsten Silicide), and their respective characteristics are obtained and compared. Finally, WSi2 was chosen as the final gate metal because it has the desired band offset, resulting in a positive threshold voltage without the need for any further implants in the channel region. Other metrics are collected, such as the variation of ID vs. VGS features at various values. There is also a fluctuation in drain current as a function of drain to source voltage.
Smu bca sem 5 spring 2016 assignments, smu solved assignments ,smu assignments ,smu mba assignments ,smu mba solved assignments ,smu mba spring 2016 assignments
- Defined the specifications and designed an architecture of the MSDAP chip that performs convolution of two signals in least possible area & power.
- Implemented a RTL model of the MSDAP chip which consists of a Controller, ALU, Memories and Serial communication Unit.
- Synthesized the design in Synopsys Design Vision and functionality was verified using the Modelsim
- Final physical design was generated using the IC Compiler.
Strategies for Effective Upskilling is a presentation by Chinwendu Peace in a Your Skill Boost Masterclass organisation by the Excellence Foundation for South Sudan on 08th and 09th June 2024 from 1 PM to 3 PM on each day.
Dear students get fully solved assignments
Send your semester & Specialization name to our mail id :
“ help.mbaassignments@gmail.com ”
or
Call us at : 08263069601
VLSI technology development nowadays is mostly focused on the downsizing of semiconductor devices, which is significantly reliant on advancements in complementary metal-oxide-semiconductor technology. Due to capacitance, shorter channel length, body biassing, faster-switching transistor, limited variability, and faster running transistor, Silicon-on-Insulator technology has seen a lot of changes. In comparison to traditional bulk technology, Silicon on Insulator offers intriguing new possibilities. The recent stalling of advancement in CMOS technology has been noticed. A fully depleted silicon on the insulator provides additional performance. Power usage and communication speed are two areas where performance can be improved. Silicon on insulator technology has the potential to reduce power consumption by nearly half while increasing speed by about 40%. Using the Atlas module of the SILVACO software, the research presents a comprehensive analysis of silicon on insulator-based nano metal oxide semiconductor field-effect transistors. Atlas is used to virtually construct a 20 nm silicon on insulator MOSFET. The gate metals employed are Aluminum, N. poly, W (Tungsten), and WSi2 (Tungsten Silicide), and their respective characteristics are obtained and compared. Finally, WSi2 was chosen as the final gate metal because it has the desired band offset, resulting in a positive threshold voltage without the need for any further implants in the channel region. Other metrics are collected, such as the variation of ID vs. VGS features at various values. There is also a fluctuation in drain current as a function of drain to source voltage.
Smu bca sem 5 spring 2016 assignments, smu solved assignments ,smu assignments ,smu mba assignments ,smu mba solved assignments ,smu mba spring 2016 assignments
- Defined the specifications and designed an architecture of the MSDAP chip that performs convolution of two signals in least possible area & power.
- Implemented a RTL model of the MSDAP chip which consists of a Controller, ALU, Memories and Serial communication Unit.
- Synthesized the design in Synopsys Design Vision and functionality was verified using the Modelsim
- Final physical design was generated using the IC Compiler.
Strategies for Effective Upskilling is a presentation by Chinwendu Peace in a Your Skill Boost Masterclass organisation by the Excellence Foundation for South Sudan on 08th and 09th June 2024 from 1 PM to 3 PM on each day.
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1. EC2354 - VLSI Design
A.R. ENGINEERING COLLEGE, VILLUPURAM
DEPT OF ECE
SUB. CODE/ NAME: EC 2354/ VLSI
BRANCH: ECE
YEAR : III SEM : VI
UNIT -1 CMOS TECHNOLOGY
PART-A
1. What are four generations of Integration Circuits?
2. Give the advantages of IC?
3. Give the variety of Integrated Circuits?
4. Give the basic process for IC fabrication
5. What are the various Silicon wafer Preparation?
6. Different types of oxidation?
7. What is the transistors CMOS technology provides?
8. What are the different layers in MOS transistors?
9. What is Enhancement mode transistor?
10. What is Depletion mode Device?
11. When the channel is said to be pinched –off?
12. Give the different types of CMOS process?
13. What are the steps involved in twin-tub process?
14. What are the advantages of Silicon-on-Insulator process?
15. What is BiCMOS Technology?
16. What are the basic processing steps involved in BiCMOS process?
17. What are the advantages of CMOS process?
18. What are the advantages of CMOS process?
19. What is the fundamental goal in Device modeling?
20. Define Short Channel devices?
PART-B
1. Derive the CMOS inverter DC characteristics and obtain the relationship for output voltage at
different region in the transfer characteristics.
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2. EC2354 - VLSI Design
2. Explain with neat diagrams the various CMOS fabrication technology
3. Explain the latch up prevention techniques.
4. Explain the operation of PMOS Enhancement transistor
5. Explain the silicon semiconductor fabrication process.
6. Explain various CAD tool sets.
UNIT – 2 CIRCUIT CHARACTERIZATION AND SIMULATION
PART-A
1. What is pull down device?
2. What is pull up device?
3. Why NMOS technology is preferred more than PMOS technology?
4. What are the different operating regions foe an MOS transistor?
5. What are the different MOS layers?
6. What is Stick Diagram?
7. What are the uses of Stick diagram?
8. Give the various color coding used in stick diagram?
9. Compare between CMOS and bipolar technologies.
10. Define Threshold voltage in CMOS?
11. What is Body effect?
12. What is Channel-length modulation?
13. What is Latch – up?
14. Give the basic inverter circuit.
15. Give the CMOS inverter DC transfer characteristics and operating regions
16. Define Rise time
17. Define Fall time
18. Define Delay time
19. Give some of the important CAD tools.
20. What are two components of Power dissipation?
PART-B
1. Explain the latch up prevention techniques.
2. Explain the operation of PMOS Enhancement transistor
3. Explain the threshold voltage equation
4. Explain the silicon semiconductor fabrication process.
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3. EC2354 - VLSI Design
5. Explain the operation of NMOS Enhancement transistor.
6. Explain the Transmission gate and the tristate inverter briefly.
7. Explain about the various non ideal conditions in MOS device model.
8. Explain the design hierarchies.
UNIT 3 COMBINATIONAL AND SEQUENTIAL CIRCUIT DESIGN
PART -A
1. Give the constituent of I/O cell in 22V10.
2. What is a FPGA?
3. What are the different methods of programming of PALs?
4. What is an antifuse?
5. What are the different levels of design abstraction at physical design?
6. What are macros?
7. What is Programmable Interconnects?
8. Give the steps in ASIC design flow.
9. Give the Xilinx configurable logic block.
10. Give the XILINX FPGA architecture
11. Differentiate between channeled & channel less gate array.
PART- B
1. Explain the concept of MOSFET as switches
2. Explain the ASIC design flow with a neat diagram
3. Explain the concept of Delay estimation, logical effort and sizing of MOSFET.
UNIT 4 CMOS TESTING
PART - A
1. Mention the levels at which testing of a chip can be done?
2. What are the categories of testing?
3. Write notes on functionality tests?
4. Write notes on manufacturing tests?
5. Mention the defects that occur in a chip?
6. Give some circuit maladies to overcome the defects?
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4. EC2354 - VLSI Design
7. What are the tests for I/O integrity?
8. What is meant by fault models?
9. Give some examples of fault models?
10. What is stuck – at fault?
11. What is meant by observability?
12. What is meant by controllability?
13. What is known as percentage-fault coverage?
14. What is fault grading?
15. Mention the ideas to increase the speed of fault simulation?
16. What is fault sampling?
17. What are the approaches in design for testability?
18. Mention the common techniques involved in ad hoc testing?
19. What are the scan-based test techniques?
20. What are the two tenets in LSSD?
21. What are the self-test techniques?
22. What is known as BILBO?
23. What is known as IDDQ testing?
24. What are the applications of chip level test techniques?
25. What is boundary scan?
26. What is the test access port?
27. What are the contents of the test architecture?
28. What is the TAP controller?
29. What is known as test data register?
30. What is known as boundary scan register?
PART - B
1. Explain fault models.
A) Stuck-At Faults
B) Explain ATPG.
2. Briefly explain
a) Fault grading & fault simulation
b) Delay fault testing
c) Statistical fault analysis
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5. EC2354 - VLSI Design
3. Explain scan-based test techniques.
4. Explain Ad-Hoc testing and chip level test techniques.
Ad-Hoc testing
Chip level test techniques
5. Explain self-test techniques and IDDQ testing.
6. Explain system-level test techniques.
UNIT 5 SPECIFICATION USING VERILOG HDL
1. What is Verilog?
2. What are the various modeling used in Verilog?
3. What is the structural gate-level modeling?
4. What is Switch-level modeling?
5. What are identifiers?
6. What are the value sets in Verilog?
7. What are the types of gate arrays in ASIC?
8. Give the classifications of timing control?
9 Give the different arithmetic operators?
10. Give the different bitwise operators.
11. What are gate primitives?
12. Give the two blocks in behavioral modeling.
13. What are the types of conditional statements?
14. Name the types of ports in Verilog
15. What are the types of procedural assignments?
16. Give the different symbols for transmission gate.
17. Give the different types of ASIC.
18. What is the full custom ASIC design?
19. What is the standard cell-based ASIC design?
PART-B
1. Explain the concept involved in Timing control in VERILOG.
2. Explain with neat diagrams the Multiplexer and latches using transmission Gate.
3. Explain the concept of gate delay in VERILOG with example
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6. EC2354 - VLSI Design
4. Explain the concept of MOSFET as switches and also bring the various logic gates using the
switching concept.
5. Explain the concept involved in structural gate level modeling and also give the
description for half adder and Full adder.
6. What is ASIC? Explain the types of ASIC.
7. Explain the VLSI design flow with a neat diagram
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7. EC2354 - VLSI Design
BIG QUESTIONS & ANSWERS
1. Derive the CMOS inverter DC characteristics and obtain the relationship for output voltage at
different region in the transfer characteristics.
Explanation (2)
Diagram (2)
CMOS inverter (2)
DC characteristics (5)
Transfer characteristics (5)
2. Explain with neat diagrams the various CMOS fabrication technology
P-well process (4)
N-well process (4)
Silicon-On-Insulator Process (4)
Twin- tub Process (4)
3. Explain the latch up prevention techniques.
Definition (2)
Explanation (2)
Diagram (2)
4. Explain the operation of PMOS Enhancement transistor
Explanation (2)
Diagram (2)
Operation (4)
5. Explain the threshold voltage equation
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9. EC2354 - VLSI Design
10. Explain about the various non ideal conditions in MOS device model.
Explanation (2)
Diagram (2)
Operation (4)
11. Explain the design hierarchies.
Explanation (2)
Diagram (2)
Concept (2)
12. Explain the concept involved in Timing control in VERILOG.
Explanation (2)
Diagram (2)
Delay-based timing control (4)
Event-based timing control (4)
Level-sensitive timing control (4)
13. Explain with neat diagrams the Multiplexer and latches using transmission Gate.
Explanation (2)
Diagram (2)
Multiplexer (4)
Latches (4)
14. Explain the concept of gate delay in VERILOG with example
Explanation (2)
Diagram (2)
Concept (2)
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10. EC2354 - VLSI Design
15. Explain the concept of MOSFET as switches and also bring the various logic gates using the
switching concept.
Explanation (2)
Diagram (2)
Gate Concepts (4)
16. Explain the concept involved in structural gate level modeling and also give the
description for half adder and Full adder.
Explanation (2)
Diagram (2)
Gate Concepts (6)
Half adder (3)
Full adder (3)
17. What is ASIC? Explain the types of ASIC.
Definition (2)
Types (2)
Full custom ASICs (4)
Semi-custom ASICs (4)
Programmable ASICs (4)
18. Explain the VLSI design flow with a neat diagram
Explanation (2)
Flow Diagram (2)
Concepts (4)
19. Explain the concept of MOSFET as switches
Explanation (2)
A.R.ENGINEERING COLLEGE, VILLUPURAM Page 10
11. EC2354 - VLSI Design
Diagram (2)
Concepts (4)
20. Explain the ASIC design flow with a neat diagram
1. Design entry (2)
2. Logic synthesis System partitioning (2)
3. Prelayout simulation. (2)
4. Floor planning (2)
5. Placement (2)
6. Routing (2)
7. Extraction (2)
8. Post layout simulation (2)
21. Explain fault models.
A) Stuck-At Faults
Definition (2)
Diagram (2)
Short-circuit and Open-circuit faults
Definition (2)
Diagram (2)
B) Explain ATPG.
Definition (2)
Truth tables (2)
Five valued logic (2)
Testability measures (2)
22. Briefly explain
a) Fault grading & fault simulation
Fault grading (2)
Fault simulation (2)
b) Delay fault testing
Diagram (2)
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12. EC2354 - VLSI Design
Description (2)
c) Statistical fault analysis
Definition (1)
Statistics (3)
d) Fault sampling (4)
23. Explain scan-based test techniques.
Level sensitive scan design (4)
Serial scan (4)
Partial serial scan (4)
Parallel scan (4)
24. Explain Ad-Hoc testing and chip level test techniques.
Ad-Hoc testing
Parallel-load feature (2)
Test signal block (2)
Use of the bus (2)
Use of multiplexer (2)
Chip level test techniques
Definition (2)
Regular logic arrays (2)
Memories (2)
Random logic (2)
25. Explain self-test techniques and IDDQ testing.
Signature analysis and BILBO (6)
Memory-self test (4)
Iterative logic array testing (3)
IDDQ testing (3)
26. Explain system-level test techniques.
Boundary scan – definition (2)
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13. EC2354 - VLSI Design
The Test Access Port (2)
The Test Architecture (2)
The TAP Controller (3)
The Instruction Register (2)
Test-Data Registers (2)
Boundary Scan Registers (3)
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