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                                                                            UV/Vis/NIR Spectrometer


                                                                             Authors
                                                                             Jayant Dharma
                                                                             PerkinElmer Technical Center
                                                                             Aniruddha Pisal
                                                                             Global Application Laboratory
                                                                             PerkinElmer, Inc.
                                                                             Shelton, CT USA




Simple Method of Measuring                                         Introduction
the Band Gap Energy Value                                          The measurement of the band gap
                                                                   of materials is important in the
of TiO2 in the Powder Form                                         semiconductor, nanomaterial and solar
                                                                   industries. This note demonstrates
using a UV/Vis/NIR                                                 how the band gap of a material can
                                                                   be determined from its UV absorption
Spectrometer                                                       spectrum.

                                      The term “band gap” refers to the energy difference between
                                      the top of the valence band to the bottom of the conduction
                                      band (See Figure 1); electrons are able to jump from one band to
                                      another. In order for an electron to jump from a valence band to a
                                      conduction band, it requires a specific minimum amount of energy
                                      for the transition, the band gap energy.1,2 A diagram illustrating the
                                      bandgap is shown in Figure 1.

                                      Measuring the band gap is important in the semiconductor and
                                      nanomaterial industries. The band gap energy of insulators is large
                                      (> 4eV), but lower for semiconductors (< 3eV). The band gap
                                      properties of a semiconductor can be controlled by using different
                                      semiconductor alloys such as GaAlAs, InGaAs, and InAlAs. A table of
                                      materials and bandgaps is given in Reference 1.

 Figure 1. Explanation of band gap.
An alternative strategy is to use layers of different materials
    coated onto the silicon base material. This is employed in
    the solar industry in the construction of photovoltaic (PV)
    solar cells. The bandgap is important as it determines the
    portion of the solar spectrum a photovoltaic cell absorbs.3
    Much of the solar radiation reaching the Earth is comprised
    of wavelengths with energies greater than the band gap of
    silicon. These higher energies will be absorbed by the solar
    cell, but the difference in energy is converted into heat rather
    than into usable electrical energy. Consequently, unless the
    band gap is controlled, the efficiency of the solar cell will be
    poor. Using layers of different materials with different band
    gap properties is a proven way to maximize the efficiency of
    solar cells.

    In the semiconductor and nanomaterial industries, titanium
    dioxide (TiO2, commonly known as titania) is added as an              Figure 3. Powder sample press with sample holder.
    ingredient to coatings. TiO2 is thought to promote the internal
    trapping of light by scattering (redirecting) the light reflected
    from the metallic electrode in the active layer and also to improve
    the transport of charge carriers through the active layer.4


    Experimental
    It has been found that many of the nanomaterial studies on
    these materials are being carried out using a small quantity
    of the sample. Hence, sampling becomes a key issue to
    this type of analysis. The analysis was carried out using
    a LAMBDA™ 1050 UV/Vis/NIR spectrometer along with
    150-mm integrating sphere (PerkinElmer, Inc., Shelton, CT
    USA) as shown in Figure 2.
                                                                          Figure 4. 150-mm Integrating Sphere Optical diagram.




    Figure 2. LAMBDA 1050 UV/Vis/NIR System with Integrating Sphere.




    This holder (Prama Industries, Mumbai, India – Figure 3) with
    powder sample in is clamped on the external port of the
    integrating sphere. A low volume powder sample press was used.        Figure 5. UV WinLab™ Software Setup.

    The optical diagram of the integrating sphere is shown in
    Figure 4.




2
The sample was run using the parameters listed in Table 1.


 Table 1. Instrumental parameters.
 Wavelength range	                        250-800 nm
 SBW	                                     2 nm
 Data interval	                           1 nm


The entrance port of the integrating sphere is kept open
to minimize the specular reflection component which can
cause fringes or noise at the extreme end of the range. The
spectra were recorded in absorbance vs. wavelength and %
reflectance vs. wavelength modes.

The advantage of using a LAMBDA 1050 was to have a second
sample compartment where the integrating sphere can be
mounted without blocking the main sample compartment.
                                                                  Figure 6. TiO2 UV/Vis spectrum obtained in this work.
Results and Discussion
The resulting spectrum obtained on TiO2 is shown in Figure 6.

The spectral data recorded showed the strong cut off
at 410.57 nm; where the absorbance value is minimum.
The data is corroborated in the % Reflectance mode.

Calculations

 Band Gap Energy (E) = h*C/λ	                           (1 & 3)
 h = Planks constant = 6.626 x 10   -34
                                          Joules sec
 C = Speed of light = 3.0 x 10 meter/sec
                             8

                                                                  Figure 7. UV/Vis Absorption measurements for TiO2-(X) ZnFe2O4
 λ = Cut off wavelength = 410.57 x 10-9 meters
                                                                  nanocomposites.
  	H	             C	             λ	                E	   eV        		     where X = Different molar concentration of ZnFe2O4.
  6.63E-34	 3.00E+08	 4.11E-07	 4.84156E-19	3.025976              		     X = 0.01 (dark green), 0.05 (light green), 0.1 (chocolate), 0.15 (pink),
 Where 1eV = 1.6 X 10-19 Joules (conversion factor)               		     0.20 (orange).
                                                                  		 TiO2 Hydrolysis (blue), Pure TiO2 (violet).




                                                                                                                                                    3
Conclusion                                                                                                               References
With similar experimental conditions and accessories, band                                                               1.	Hoffman, M., Martin, S., Choi, W., & Bahnemann, D.
gap energy values for various powder nanomaterials can be                                                                   (1995). “Environmental applications of semiconductor
calculated. With this, the quality of TiO2 also can be                                                                      photo catalysis,” Chemical Review, vol. 95, pp. 69-96.
determined. Various other semiconductor nanomaterials can
                                                                                                                         2.	Wikipedia: Bandgap definition and diagram,
also be subjected to the experiment for which the example
                                                                                                                            http://en.wikipedia.org/wiki/Bandgap.
spectra from literature are given in Figure 7.5
                                                                                                                         3.	An Investigation of TiO2-ZnFe2O4 Nanocomposites for Visible
The major advantages of using the specially designed small
                                                                                                                            Light Photo catalysis by Jeremy Wade, A thesis submitted to
powder sample holder are:
                                                                                                                            Department of Electrical Engineering; College of Engineering,
1.	Smaller quantity powder samples can be analyzed directly                                                                 University of South Florida, March 24, 2005.

2.	Due to a specially designed hand press, powder gets caked                                                             4.	Fundamentals of Molecular Spectroscopy; C.N. Banwell
   in the cup firmly and does not slip in to the sphere                                                                     University of Sussex, 3rd edition, May 1983.

3.	Sample quantity required is 20-30 times less than the                                                                 5.	Wikipedia: Effect of TiO2 Nanoparticles on Polymer-Based
   conventional powder sample holder                                                                                        Bulk Heterojunction Solar Cells
                                                                                                                            http://jjap.ipap.jp/link?JJAP/45/L1314/,Bandgap
4.	The press gives a very even surface to the sample to
                                                                                                                            http://www.ingentaconnect.com/content/els/02540584/200
   conduct reflectance experiments
                                                                                                                            3/00000078/00000001/art00343
5.	Minimizes the specular component of the reflection
   as the sample is being exposed directly to the beam.

6.	Cost effective sampling device with a depth of 1.5 cm deep
   and 1 cm diameter.




PerkinElmer, Inc.
940 Winter Street
Waltham, MA 02451 USA	
P: (800) 762-4000 or
(+1) 203-925-4602
www.perkinelmer.com



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Copyright ©2009-2102, PerkinElmer, Inc. All rights reserved. PerkinElmer® is a registered trademark of PerkinElmer, Inc. All other trademarks are the property of their respective owners.

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Application Note: Simple Method of Measuring the Band Gap Energy Value of TiO(2) in the Powder Form using a UV/Vis/NIR Spectrometer.

  • 1. a p p l i c at i o n N o t e UV/Vis/NIR Spectrometer Authors Jayant Dharma PerkinElmer Technical Center Aniruddha Pisal Global Application Laboratory PerkinElmer, Inc. Shelton, CT USA Simple Method of Measuring Introduction the Band Gap Energy Value The measurement of the band gap of materials is important in the of TiO2 in the Powder Form semiconductor, nanomaterial and solar industries. This note demonstrates using a UV/Vis/NIR how the band gap of a material can be determined from its UV absorption Spectrometer spectrum. The term “band gap” refers to the energy difference between the top of the valence band to the bottom of the conduction band (See Figure 1); electrons are able to jump from one band to another. In order for an electron to jump from a valence band to a conduction band, it requires a specific minimum amount of energy for the transition, the band gap energy.1,2 A diagram illustrating the bandgap is shown in Figure 1. Measuring the band gap is important in the semiconductor and nanomaterial industries. The band gap energy of insulators is large (> 4eV), but lower for semiconductors (< 3eV). The band gap properties of a semiconductor can be controlled by using different semiconductor alloys such as GaAlAs, InGaAs, and InAlAs. A table of materials and bandgaps is given in Reference 1. Figure 1. Explanation of band gap.
  • 2. An alternative strategy is to use layers of different materials coated onto the silicon base material. This is employed in the solar industry in the construction of photovoltaic (PV) solar cells. The bandgap is important as it determines the portion of the solar spectrum a photovoltaic cell absorbs.3 Much of the solar radiation reaching the Earth is comprised of wavelengths with energies greater than the band gap of silicon. These higher energies will be absorbed by the solar cell, but the difference in energy is converted into heat rather than into usable electrical energy. Consequently, unless the band gap is controlled, the efficiency of the solar cell will be poor. Using layers of different materials with different band gap properties is a proven way to maximize the efficiency of solar cells. In the semiconductor and nanomaterial industries, titanium dioxide (TiO2, commonly known as titania) is added as an Figure 3. Powder sample press with sample holder. ingredient to coatings. TiO2 is thought to promote the internal trapping of light by scattering (redirecting) the light reflected from the metallic electrode in the active layer and also to improve the transport of charge carriers through the active layer.4 Experimental It has been found that many of the nanomaterial studies on these materials are being carried out using a small quantity of the sample. Hence, sampling becomes a key issue to this type of analysis. The analysis was carried out using a LAMBDA™ 1050 UV/Vis/NIR spectrometer along with 150-mm integrating sphere (PerkinElmer, Inc., Shelton, CT USA) as shown in Figure 2. Figure 4. 150-mm Integrating Sphere Optical diagram. Figure 2. LAMBDA 1050 UV/Vis/NIR System with Integrating Sphere. This holder (Prama Industries, Mumbai, India – Figure 3) with powder sample in is clamped on the external port of the integrating sphere. A low volume powder sample press was used. Figure 5. UV WinLab™ Software Setup. The optical diagram of the integrating sphere is shown in Figure 4. 2
  • 3. The sample was run using the parameters listed in Table 1. Table 1. Instrumental parameters. Wavelength range 250-800 nm SBW 2 nm Data interval 1 nm The entrance port of the integrating sphere is kept open to minimize the specular reflection component which can cause fringes or noise at the extreme end of the range. The spectra were recorded in absorbance vs. wavelength and % reflectance vs. wavelength modes. The advantage of using a LAMBDA 1050 was to have a second sample compartment where the integrating sphere can be mounted without blocking the main sample compartment. Figure 6. TiO2 UV/Vis spectrum obtained in this work. Results and Discussion The resulting spectrum obtained on TiO2 is shown in Figure 6. The spectral data recorded showed the strong cut off at 410.57 nm; where the absorbance value is minimum. The data is corroborated in the % Reflectance mode. Calculations Band Gap Energy (E) = h*C/λ (1 & 3) h = Planks constant = 6.626 x 10 -34 Joules sec C = Speed of light = 3.0 x 10 meter/sec 8 Figure 7. UV/Vis Absorption measurements for TiO2-(X) ZnFe2O4 λ = Cut off wavelength = 410.57 x 10-9 meters nanocomposites. H C λ E eV where X = Different molar concentration of ZnFe2O4. 6.63E-34 3.00E+08 4.11E-07 4.84156E-19 3.025976 X = 0.01 (dark green), 0.05 (light green), 0.1 (chocolate), 0.15 (pink), Where 1eV = 1.6 X 10-19 Joules (conversion factor) 0.20 (orange). TiO2 Hydrolysis (blue), Pure TiO2 (violet). 3
  • 4. Conclusion References With similar experimental conditions and accessories, band 1. Hoffman, M., Martin, S., Choi, W., & Bahnemann, D. gap energy values for various powder nanomaterials can be (1995). “Environmental applications of semiconductor calculated. With this, the quality of TiO2 also can be photo catalysis,” Chemical Review, vol. 95, pp. 69-96. determined. Various other semiconductor nanomaterials can 2. Wikipedia: Bandgap definition and diagram, also be subjected to the experiment for which the example http://en.wikipedia.org/wiki/Bandgap. spectra from literature are given in Figure 7.5 3. An Investigation of TiO2-ZnFe2O4 Nanocomposites for Visible The major advantages of using the specially designed small Light Photo catalysis by Jeremy Wade, A thesis submitted to powder sample holder are: Department of Electrical Engineering; College of Engineering, 1. Smaller quantity powder samples can be analyzed directly University of South Florida, March 24, 2005. 2. Due to a specially designed hand press, powder gets caked 4. Fundamentals of Molecular Spectroscopy; C.N. Banwell in the cup firmly and does not slip in to the sphere University of Sussex, 3rd edition, May 1983. 3. Sample quantity required is 20-30 times less than the 5. Wikipedia: Effect of TiO2 Nanoparticles on Polymer-Based conventional powder sample holder Bulk Heterojunction Solar Cells http://jjap.ipap.jp/link?JJAP/45/L1314/,Bandgap 4. The press gives a very even surface to the sample to http://www.ingentaconnect.com/content/els/02540584/200 conduct reflectance experiments 3/00000078/00000001/art00343 5. Minimizes the specular component of the reflection as the sample is being exposed directly to the beam. 6. Cost effective sampling device with a depth of 1.5 cm deep and 1 cm diameter. PerkinElmer, Inc. 940 Winter Street Waltham, MA 02451 USA P: (800) 762-4000 or (+1) 203-925-4602 www.perkinelmer.com For a complete listing of our global offices, visit www.perkinelmer.com/ContactUs Copyright ©2009-2102, PerkinElmer, Inc. All rights reserved. PerkinElmer® is a registered trademark of PerkinElmer, Inc. All other trademarks are the property of their respective owners. 008684A_01