Alguns aspectos sobre caracterização de materiais e de dispositivos semicondutores
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Apresentação sobre um resumo dos capítulos 1 a 6 do livro de Dieter K. Schroder para a disciplina de Caracterização & Testes de dispositivos integrados
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Alguns aspectos sobre caracterização de materiais e de dispositivos semicondutores
- 1. Caracterização de materiais & dispositivos semicondutores por Roní Gonçalves
- 4. ?
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- 6. $
- 15. Siltronic AG – Roadshow Presentation January, 2018 3 of 40© Siltronic AG 2018 Increasing demand for electronic devices and new applications drive semiconductor growth, which in turn fuels silicon demand Electronics value chain 2016 Electronics USD 1,457bn Semiconductors USD 327bn Semiconductors silicon wafers USD 7.2bn Silicon for electronic applications USD 1.2bn
- 16. Siltronic AG – Roadshow Presentation January, 2018 4 of 40© Siltronic AG 2018 10% 15% 31% 28% 16% SK Siltron Siltronic Shin Etsu Sumco GlobalWafers Siltronic is a strong wafer supplier with leading-edge technology Sources: Companies’ revenue reports 2016, converted to USD million Top 5 wafer producers serve more than 90% of market across all diameters Comments Siltronic with long-term stable market share of around 15% Siltronic recognized as technology leader in the industry Joint development programs with most 300mm customers Qualified at latest Design Rules
- 17. Siltronic AG – Roadshow Presentation January, 2018 8 of 40© Siltronic AG 2018 ~5.5 mn. Wfr./month Wafer suppliers not able to support 300mm wafer demand during 2018 and 2019 Customers bringing new FABs online – total demand increase 2017-2020: ~1.900 kw/m Capacity increase of wafer suppliers limited by equipment supply potentials / lead times Wafer suppliers seem to act rationally by only adding capacities in incremental steps Industry probably constrained by wafer supply until 2020 Sources: SEMI, IHS, Siltronic estimates 300mm demand vs. supply capacity, in kw/month Demand (SEMI / IHS) Capacity (Estimation)
- 18. © Siltronic AG 2017 10 of 40 Siltronic’s Design Rule roadmap follows road to “More Moore” “More Moore” – Siltronic’s technology roadmap will stay “One Generation Ahead” 10 2012 2013 2014 2015 2016 2017 2018 2019 2020 2021 300 mm 22 / 16 nm 16 nm 16 / 11 nm 11 nm 11 / 8 nm 8 nm 8 / 5 nm 5 nm 5 / 3.5 nm 3.5 nm Technology node 300 mm development 8 nm Development Commercialization 16 nm Commercialization 11 nm Development Commercialization 5 nm Development Commercialization
- 19. © Siltronic AG 2017 11 of 40 The transition to the next DR typically requires an improvement of critical wafer parameters by ~ 30 %! Siltronic DR projects develop processes for upcoming wafer requirements one generation ahead Image source: www.chiemsee-alpenland.de Surface defects Shape Crystal homogeneity Surface / bulk metals Local / near-edge flatness How small is 20nm? 20nm height on a wafer ≈ a flat leave on the surface of the Chiemsee. Specifications down to 20nm!
- 20. Siltronic AG – Roadshow Presentation January, 2018 15 of 40© Siltronic AG 2018 Ingot Flatness just one example – A number of key ingot & wafer properties needs to be continuously improved to meet customers‘ requirements Wafer oxygen content homogeneity flatness surface cleanliness edge flatness uniformity resistivity shape mechanical stability purity doping level
- 21. JMS + Projeto GNU
- 22. JMS + Projeto GNU Archimedes
- 31. Duas pontas de prova
- 34. ρ = 2πs V I
- 36. Método van der Pauw
- 40. Dopantes & portadores de carga
- 42. Resistência de contato & Barreira Schottky
- 44. rs = f (ρ,ρi+ρc , x , y , z)
- 46. L & W
- 49. R ∝ L W
- 50. VTH
- 54. Defeitos
- 59. DLTS & PAS
- 62. SiSiO2