3D STACKED MEMORY
04
02
© LexInnova 2015 www.lex-innova.com
02
03
01
The worldwide 3D IC market is expected to develop from US$2.21 billion
in 2011 to US$6.55 billion in 2015 at a CAGR of 16.9% from 2011 to 2015.
0
20172016201520142013201220112010
50
10%
9%
8%
7%
6%
5%
4%
3%
2%
1%
0%
100
150
200
250
300
350
400
450
500
Total 3D TSV devices(B$) 3D TSV Penetration rate
Marketvalue(BS)
3DTSVPenetrationrate(%)
Total semi value(B$)
excluding 2.50 interposer substrate value
SanDisk
793
Matrix
Semiconductor
36
AMD
31
Unity
Semiconductor
30
Hitachi
29
III HOLDINGS LLC
24
HP
24
Sharp Corp
19
Micron
Technology
219
Samsung
194
Macronix
95
Intel Corp
90
Guobiao Zhang
57
Toshiba
47
IBM
39
ContactFormation+
StructuralFeatures
Assembly/Packing+
StructuralFeatures
DeviceFormation
StructuralFeatures
Stacking+
StructuralFeatures
Interconnects
Formation+
Structural Feature
Other_FEOL+Structural
Feature
Water
Development+
Structural
Features
Testing+
Structural
Features
Other-BEOL
+Model
Parameters
Lithography+
Structural
Features
Other_BEOL+
Structural Features
Etching+
Structural Features
Stacking+
Model
Parameters
Contact Formation
+ Operating Speed
Contact Formation
+ Model Parameters
3D Stacked Memory is an integrated circuit manufactured
by stacking silicon wafers and interconnecting them
vertically using through-silicon vias (TSVs). These stacked
wafers behave as a single device and achieve higher
performance at reduced power as compared to
conventional two-dimensional devices.
SanDisk, Micron, and Samsung are the top three
assignees in terms of patent holdings. The number of patents
/patent applications owned by top the three assignees
comprise around 52% of the total patents/patent applications
filed in the domain. Guobiao Zhang, an individual inventor has
filed 57patents/patent applications.
MERGERS AND ACQUISITIONS
Intel and its partner company, Micron, announced a
3D NAND solution that enables chips with 384Gbits
(48GBs) of capacity which is three times that of
existing 3D NAND chips.
AMD has reported that it would be mutually working
with memory device manufacturer SK Hynix in the
development of cutting edge, high-bandwidth, 3D
stacked memory items and arrangements.
Market Projections
TOP ASSIGNEES
LICENSING HEAT MAP
Model parameters & Operating Speed related to Contact
Formation (FEOL) and Structural Features related to Assembly/
Packaging are red in color which reflects a very distributed
portfolio with no monopoly of any assignee in these domains,
hence have higher chances of licensing activity. While on
the other hand, domains like Stacking and Etching combined
with the structural features fall in the lighter shades reflecting
that the patent portfolio in these domains is predominantly
held by some top players. Sandisk, Samsung and Micron are
the prominent assignees in most of the technology domains.

3D Stacked Memory Patent Landscape Analysis

  • 1.
    3D STACKED MEMORY 04 02 ©LexInnova 2015 www.lex-innova.com 02 03 01 The worldwide 3D IC market is expected to develop from US$2.21 billion in 2011 to US$6.55 billion in 2015 at a CAGR of 16.9% from 2011 to 2015. 0 20172016201520142013201220112010 50 10% 9% 8% 7% 6% 5% 4% 3% 2% 1% 0% 100 150 200 250 300 350 400 450 500 Total 3D TSV devices(B$) 3D TSV Penetration rate Marketvalue(BS) 3DTSVPenetrationrate(%) Total semi value(B$) excluding 2.50 interposer substrate value SanDisk 793 Matrix Semiconductor 36 AMD 31 Unity Semiconductor 30 Hitachi 29 III HOLDINGS LLC 24 HP 24 Sharp Corp 19 Micron Technology 219 Samsung 194 Macronix 95 Intel Corp 90 Guobiao Zhang 57 Toshiba 47 IBM 39 ContactFormation+ StructuralFeatures Assembly/Packing+ StructuralFeatures DeviceFormation StructuralFeatures Stacking+ StructuralFeatures Interconnects Formation+ Structural Feature Other_FEOL+Structural Feature Water Development+ Structural Features Testing+ Structural Features Other-BEOL +Model Parameters Lithography+ Structural Features Other_BEOL+ Structural Features Etching+ Structural Features Stacking+ Model Parameters Contact Formation + Operating Speed Contact Formation + Model Parameters 3D Stacked Memory is an integrated circuit manufactured by stacking silicon wafers and interconnecting them vertically using through-silicon vias (TSVs). These stacked wafers behave as a single device and achieve higher performance at reduced power as compared to conventional two-dimensional devices. SanDisk, Micron, and Samsung are the top three assignees in terms of patent holdings. The number of patents /patent applications owned by top the three assignees comprise around 52% of the total patents/patent applications filed in the domain. Guobiao Zhang, an individual inventor has filed 57patents/patent applications. MERGERS AND ACQUISITIONS Intel and its partner company, Micron, announced a 3D NAND solution that enables chips with 384Gbits (48GBs) of capacity which is three times that of existing 3D NAND chips. AMD has reported that it would be mutually working with memory device manufacturer SK Hynix in the development of cutting edge, high-bandwidth, 3D stacked memory items and arrangements. Market Projections TOP ASSIGNEES LICENSING HEAT MAP Model parameters & Operating Speed related to Contact Formation (FEOL) and Structural Features related to Assembly/ Packaging are red in color which reflects a very distributed portfolio with no monopoly of any assignee in these domains, hence have higher chances of licensing activity. While on the other hand, domains like Stacking and Etching combined with the structural features fall in the lighter shades reflecting that the patent portfolio in these domains is predominantly held by some top players. Sandisk, Samsung and Micron are the prominent assignees in most of the technology domains.