This document describes a comparative study of ZnO layers grown using molecular beam epitaxy (MBE) and radio frequency (RF) sputtering techniques. It discusses the properties and applications of ZnO, the deposition techniques, and characterization methods like current-voltage measurement, deep level transient spectroscopy, and photoluminescence spectroscopy. The goals of the study are to understand defects in ZnO grown by different methods and correlate growth parameters with material properties to enable high-performance ZnO-based optical and electronic devices.
A three day workshop on PN-Junction and BJT devices was held from April 11-13 at VCET in Puttur. The workshop consisted of five sessions covering topics ranging from the classification of solids and quantum numbers to PN junction formation, bias conditions, and BJT operation. Dr. P. Subbanna Bhat began by emphasizing the importance of continuous learning. Sessions explained the theory behind semiconductor diodes and PN junctions, as well as reverse breakdown voltage, BJT terminals and regions of operation, and rectifier circuits. Participants found the workshop very helpful in understanding these fundamental semiconductor concepts and devices.
This chapter discusses electrical conduction processes in materials and semiconductor devices. It begins by describing conduction in metals, semiconductors, and doped semiconductors. Next, it covers the p-n junction, including the formation of a space-charge layer and drift and diffusion currents. The characteristics of the p-n junction and diode are then explained. The chapter concludes by discussing maximum power dissipation and voltage limitations in diodes due to avalanche and Zener breakdown.
This document outlines the course details for Electronics-I, a 3 credit hour course offered by the BS Physics Department at NFC Institute of Engineering and Technology. The course covers topics related to amplifiers, oscillators, modulation, and integrated circuits. Student assessment will include sessional tests, quizzes, assignments, attendance, presentations, a midterm exam, and an end term exam. The textbook is Electronics Fundamentals by Thomas L. Floyd and the reference book is Basic Electronics by B. Grob. The course includes a laboratory component.
This document summarizes research characterizing the electrical properties of different isoforms of the reflectin protein, which may have applications in bioelectronic devices. Protonic transistors were fabricated using reflectin isoforms A1, A2, and B1 as the active material. All isoforms showed increased current with proton-injecting palladium hydride electrodes and increasing humidity, indicating proton conduction. Field effect tests also supported proton conduction. Future work may include integrating these transistors with living materials or engineering optimized isoforms through selective breeding.
This document contains the curriculum vitae of Nihar R. Pradhan, who is currently a postdoctoral research associate at the National High Magnetic Field Laboratory in Tallahassee, Florida. His research focuses on nanotechnology, including the synthesis and characterization of two-dimensional materials like transition metal dichalcogenides. Some of his work involves fabricating field-effect transistors from these materials and investigating their electrical and optical properties. He has a Ph.D. in Physics from Worcester Polytechnic Institute and several years of experience as a postdoctoral researcher.
This document summarizes a thesis submitted for a Master's degree in nano-optoelectronics. The thesis focuses on synthesizing and characterizing bismuth sodium titanate (BNT), a lead-free ferroelectric material. BNT is studied as an alternative to lead zirconate titanate (PZT), which is widely used but toxic. The thesis will synthesize BNT using solid-state and sol-gel methods, characterize its structure and properties, and compare the results. Characterization tools like XRD, SEM, and dielectric measurements will be used. If successful, BNT could replace PZT in applications like sensors and actuators while avoiding lead's toxicity issues.
The document describes an electronics workshop for students. It outlines the mission of the department, which is to provide good technical education and enhance competency through infrastructure, resources, teaching, and committed faculty. It also aims to provide platforms for developing professionalism and ethics in students. The workshop aims to create a strong foundation to enable students' career choices. The document then lists the experiments covered in the workshop, including studying basic electronic components like resistors, capacitors, inductors, diodes, and transistors. It provides details on one experiment to identify specifications of components by referring to datasheets and understand their applications.
This document describes a comparative study of ZnO layers grown using molecular beam epitaxy (MBE) and radio frequency (RF) sputtering techniques. It discusses the properties and applications of ZnO, the deposition techniques, and characterization methods like current-voltage measurement, deep level transient spectroscopy, and photoluminescence spectroscopy. The goals of the study are to understand defects in ZnO grown by different methods and correlate growth parameters with material properties to enable high-performance ZnO-based optical and electronic devices.
A three day workshop on PN-Junction and BJT devices was held from April 11-13 at VCET in Puttur. The workshop consisted of five sessions covering topics ranging from the classification of solids and quantum numbers to PN junction formation, bias conditions, and BJT operation. Dr. P. Subbanna Bhat began by emphasizing the importance of continuous learning. Sessions explained the theory behind semiconductor diodes and PN junctions, as well as reverse breakdown voltage, BJT terminals and regions of operation, and rectifier circuits. Participants found the workshop very helpful in understanding these fundamental semiconductor concepts and devices.
This chapter discusses electrical conduction processes in materials and semiconductor devices. It begins by describing conduction in metals, semiconductors, and doped semiconductors. Next, it covers the p-n junction, including the formation of a space-charge layer and drift and diffusion currents. The characteristics of the p-n junction and diode are then explained. The chapter concludes by discussing maximum power dissipation and voltage limitations in diodes due to avalanche and Zener breakdown.
This document outlines the course details for Electronics-I, a 3 credit hour course offered by the BS Physics Department at NFC Institute of Engineering and Technology. The course covers topics related to amplifiers, oscillators, modulation, and integrated circuits. Student assessment will include sessional tests, quizzes, assignments, attendance, presentations, a midterm exam, and an end term exam. The textbook is Electronics Fundamentals by Thomas L. Floyd and the reference book is Basic Electronics by B. Grob. The course includes a laboratory component.
This document summarizes research characterizing the electrical properties of different isoforms of the reflectin protein, which may have applications in bioelectronic devices. Protonic transistors were fabricated using reflectin isoforms A1, A2, and B1 as the active material. All isoforms showed increased current with proton-injecting palladium hydride electrodes and increasing humidity, indicating proton conduction. Field effect tests also supported proton conduction. Future work may include integrating these transistors with living materials or engineering optimized isoforms through selective breeding.
This document contains the curriculum vitae of Nihar R. Pradhan, who is currently a postdoctoral research associate at the National High Magnetic Field Laboratory in Tallahassee, Florida. His research focuses on nanotechnology, including the synthesis and characterization of two-dimensional materials like transition metal dichalcogenides. Some of his work involves fabricating field-effect transistors from these materials and investigating their electrical and optical properties. He has a Ph.D. in Physics from Worcester Polytechnic Institute and several years of experience as a postdoctoral researcher.
This document summarizes a thesis submitted for a Master's degree in nano-optoelectronics. The thesis focuses on synthesizing and characterizing bismuth sodium titanate (BNT), a lead-free ferroelectric material. BNT is studied as an alternative to lead zirconate titanate (PZT), which is widely used but toxic. The thesis will synthesize BNT using solid-state and sol-gel methods, characterize its structure and properties, and compare the results. Characterization tools like XRD, SEM, and dielectric measurements will be used. If successful, BNT could replace PZT in applications like sensors and actuators while avoiding lead's toxicity issues.
The document describes an electronics workshop for students. It outlines the mission of the department, which is to provide good technical education and enhance competency through infrastructure, resources, teaching, and committed faculty. It also aims to provide platforms for developing professionalism and ethics in students. The workshop aims to create a strong foundation to enable students' career choices. The document then lists the experiments covered in the workshop, including studying basic electronic components like resistors, capacitors, inductors, diodes, and transistors. It provides details on one experiment to identify specifications of components by referring to datasheets and understand their applications.
This document outlines the syllabus for a B.Sc. in Electronics program under the Choice Based Credit System at Osmania University. It provides details of the course structure over six semesters, including the title and credits of theory and practical papers each semester. The syllabus and expected learning outcomes are described for core papers in circuits, electronic devices, analog and digital circuits, and communication systems. It also lists reference books and websites for more information.
This document contains information about various topics covered in B.Sc Electronics Semester 1. It includes 4 units for Paper 1 on Electronic Components, Network Theorems and DC circuits. It also includes 4 units for Paper 2 on fundamentals of digital electronics covering number systems, logic gates, Karnaugh maps and combinational logic circuits. It lists practical experiments related to both papers. It provides reference books for both subjects. Overall, the document outlines the syllabus, topics and experiments for the first semester of a B.Sc Electronics degree.
Winston Frias Pombo is a physicist currently working at the University of Saskatchewan. He has experience in theoretical and computational physics, with a focus on plasma physics, electromagnetism, and wave propagation. His research has been published in leading scientific journals and presented at major conferences. He holds a PhD in Physics from the University of Saskatchewan and is looking for research positions where he can continue developing his computational skills and applying them to real-world problems.
Electrical Measurements for Semiconducting DevicesYogesh Patil
The document discusses electrical measurements for semiconducting devices. It describes current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics, which are important for understanding the performance of solar cells and other semiconductor applications. The I-V characteristics provide information about the ideality factor and barrier potential of devices like diodes and solar cells. C-V measurements allow determining parameters like doping concentration and flat band potential. Understanding these electrical measurements is key to improving the efficiency of devices using heterojunctions of wide bandgap semiconductors.
This document provides information about a course on semiconductor devices, including bipolar junction transistors (BJTs). It lists the course aims as reviewing diode and BJT operation, extending knowledge to include recombination influences, investigating speed limitations, and extracting equivalent circuit models. It recommends textbooks and outlines the course topics as reviewing semiconductor devices and pn diodes, studying long pn diodes incorporating recombination, examining BJT DC operation and switching characteristics, and why studying devices is important.
This document provides an overview of the basic electronics subject code 3110016. It includes topics such as digital fundamentals, microprocessors, analog and digital communication, and mobile communication. The contents section lists specific topics that will be covered, including diode theory and applications, bipolar junction transistors and biasing, special purpose diodes and transistors, AC analysis of BJT circuits, field effect transistors and biasing, and digital circuits. Reference books are also provided.
Fisika Zat Padat (5 - 7) b-metal_vs_semiconductorjayamartha
The document discusses metal-semiconductor junctions, including their structure, band diagrams, and behavior under applied bias. When a metal and semiconductor come into contact, electrons flow until their Fermi levels align, creating a depletion region. Surface states in the semiconductor pin the Fermi level, affecting the barrier height. Under forward bias, the barrier decreases and current flows via thermionic emission or drift-diffusion. Metal-semiconductor junctions are useful for applications like ohmic contacts and doping profiling due to their majority carrier operation and low barriers.
The document discusses the structure and behavior of metal-semiconductor junctions, comparing them to p-n junctions. It covers the band structure and barrier formation at the junction, both with and without surface states. Applying a voltage bias changes the depletion width and electric field. Current flows as majority carriers cross the lowered barrier. Models describe the barrier transit rates, and applications include ohmic contacts, doping profiling, and diodes. Metal-semiconductor junctions are useful due to majority-carrier operation and low forward current barriers.
The document discusses metal-semiconductor junctions, including:
1. The structure of the junction and how energy bands evolve with the metal and semiconductor coming together. Surface states at the semiconductor surface pin the Fermi level.
2. Applying a voltage bias changes the potential barrier and depletion region width, affecting current flow.
3. Current is modeled as thermionic emission of majority carriers over the altered potential barrier, with the net current dependent on bias voltage. Models of the barrier transit rate R further develop current expressions.
This document outlines the course objectives, outcomes, contents, and units for a Basic Electronics course at Matrusri Engineering College. The course aims to teach students about the characteristics, design concepts, and applications of diodes, transistors, feedback amplifiers, oscillators, and operational amplifiers. Specific topics covered include rectifier and regulator circuits, biasing of BJTs and FETs, oscillator design, logic gates, and data acquisition systems. One unit focuses on semiconductor materials and diode circuit design, while another covers Zener diodes, voltage regulators, and the construction and applications of cathode ray tubes in oscilloscopes.
The document summarizes the superjunction concept in power MOSFETs. It introduces the limitation of conventional power MOSFETs in achieving high voltage and describes how the superjunction structure addresses this by using alternating n-type and p-type pillars in the drift region. This allows the electric field to be distributed two-dimensionally rather than triangulary, enabling higher doping levels, lower resistivity, and higher breakdown voltages compared to conventional devices. However, the superjunction structure is more difficult to fabricate due to the high aspect ratios required. Future work may involve relaxed geometries, charge sheet approximations, or implementing the design in wide bandgap semiconductors.
Nanowire Based FET Biosensors and Their Biomedical Applications. Fawad Majeed...Fawad Majeed
This document discusses nanowire-based biosensors and their applications in biomedicine. It begins by defining sensors and biosensors. Nanowires can be used as sensors due to their distinct electrical and optical properties. There are two main types of nanosensors: mechanical and chemical. Nanowire field-effect transistors can detect charged biomolecules through changes in conductivity. These sensors have been used to detect proteins, DNA, RNA and viruses by functionalizing the nanowire surface with specific receptors. While promising for detection, further improvements are needed for commercialization, such as enhanced sensitivity and simpler fabrication processes.
The document discusses a course on basic electronics at Matrusri Engineering College. It includes:
1. The course objectives are to understand the characteristics and design concepts of diodes, transistors, feedback amplifiers, oscillators, and operational amplifiers.
2. The course outcomes are for students to be able to analyze and design rectifier, regulator, amplifier, and oscillator circuits and understand the performance of transistors.
3. The first module will cover the characteristics of PN junctions, including half wave and full wave rectifiers, and diodes such as Zener diodes.
Organic field-effect transistors (OFETs) use organic semiconductors like pentacene that can be deposited through low-cost solution processing. OFETs have the potential for applications requiring flexibility and large-area coverage. Pentacene has shown high carrier mobility, with mobilities on par with amorphous silicon in the best OFETs. While progress has been made, understanding charge transport and developing n-type and ambipolar materials remains an area of ongoing research to further improve organic electronics.
This dissertation focuses on the design, fabrication, and analysis of high voltage 4H-SiC devices for power electronics applications. It proposes new edge termination techniques like multiple floating zone junction termination extension and non-equally spaced floating field rings to improve breakdown voltage of 10kV PiN rectifiers. Experimental results verify these techniques. It also investigates the frequency capabilities of 15kV 4H-SiC MOSFETs, asymmetric IGBTs and symmetric IGBTs when used in solid state transformers. The study finds the symmetric IGBT is best up to 10kHz due to its trade-off between turn-off energy loss and forward voltage.
The document discusses the development of charge exchange injection and production of circulating proton beams with intensities greater than the space charge limit. It summarizes early work at Novosibirsk INP in the 1960s-1970s on accumulating proton beams using charge exchange injection up to the space charge limit. It also describes observations of the electron-proton instability in coasting beams and methods for damping instabilities. Later work was able to produce proton beams with intensities up to 9 times above the space charge limit through compensation of the beam space charge by secondary electrons. Diagnostics such as residual gas ionization monitors were important for characterizing the circulating beams.
simulation of piezoelectric nanofibers for harvesting energygrond1
1) The document simulates piezoelectric nanofibers for energy harvesting applications using COMSOL Multiphysics software. PZT nanofibers are constructed via electrospinning and deposited on interdigitated electrodes on a silicon substrate.
2) The simulation models piezoelectric nanofibers made of PZT under various pressures. It defines the materials and mesh properties and applies boundary conditions to the electrodes.
3) The results show the output voltage at different frequencies and pressures. The conclusion discusses optimizing the nanofibers by changing the flexible polymer material to improve energy harvesting performance.
The document provides an overview of physics topics covered in intermediate and degree-level syllabi for exams such as JAM, ANUPGCET, and job exams for positions like JL and DL. It discusses topics in areas like mechanics, properties of matter, electromagnetism, optics, and modern physics. For intermediate-level, it specifically outlines topics in areas like magnetism, electrostatics, current electricity, and electromagnetism. These include Coulomb's law, magnetic field, capacitance, resistance, Biot-Savart law, Faraday's law, and LCR circuits. The degree-level syllabus expands on areas of electricity, magnetism, electronics, and electromagnetism.
Transient Electronics: as per the name defines itself "lasting only for a short time"these devices can very well be used in covert operations where they can simply disappear after serving their purpose.Help in reducing e-waste.
Accident detection system project report.pdfKamal Acharya
The Rapid growth of technology and infrastructure has made our lives easier. The
advent of technology has also increased the traffic hazards and the road accidents take place
frequently which causes huge loss of life and property because of the poor emergency facilities.
Many lives could have been saved if emergency service could get accident information and
reach in time. Our project will provide an optimum solution to this draw back. A piezo electric
sensor can be used as a crash or rollover detector of the vehicle during and after a crash. With
signals from a piezo electric sensor, a severe accident can be recognized. According to this
project when a vehicle meets with an accident immediately piezo electric sensor will detect the
signal or if a car rolls over. Then with the help of GSM module and GPS module, the location
will be sent to the emergency contact. Then after conforming the location necessary action will
be taken. If the person meets with a small accident or if there is no serious threat to anyone’s
life, then the alert message can be terminated by the driver by a switch provided in order to
avoid wasting the valuable time of the medical rescue team.
This document outlines the syllabus for a B.Sc. in Electronics program under the Choice Based Credit System at Osmania University. It provides details of the course structure over six semesters, including the title and credits of theory and practical papers each semester. The syllabus and expected learning outcomes are described for core papers in circuits, electronic devices, analog and digital circuits, and communication systems. It also lists reference books and websites for more information.
This document contains information about various topics covered in B.Sc Electronics Semester 1. It includes 4 units for Paper 1 on Electronic Components, Network Theorems and DC circuits. It also includes 4 units for Paper 2 on fundamentals of digital electronics covering number systems, logic gates, Karnaugh maps and combinational logic circuits. It lists practical experiments related to both papers. It provides reference books for both subjects. Overall, the document outlines the syllabus, topics and experiments for the first semester of a B.Sc Electronics degree.
Winston Frias Pombo is a physicist currently working at the University of Saskatchewan. He has experience in theoretical and computational physics, with a focus on plasma physics, electromagnetism, and wave propagation. His research has been published in leading scientific journals and presented at major conferences. He holds a PhD in Physics from the University of Saskatchewan and is looking for research positions where he can continue developing his computational skills and applying them to real-world problems.
Electrical Measurements for Semiconducting DevicesYogesh Patil
The document discusses electrical measurements for semiconducting devices. It describes current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics, which are important for understanding the performance of solar cells and other semiconductor applications. The I-V characteristics provide information about the ideality factor and barrier potential of devices like diodes and solar cells. C-V measurements allow determining parameters like doping concentration and flat band potential. Understanding these electrical measurements is key to improving the efficiency of devices using heterojunctions of wide bandgap semiconductors.
This document provides information about a course on semiconductor devices, including bipolar junction transistors (BJTs). It lists the course aims as reviewing diode and BJT operation, extending knowledge to include recombination influences, investigating speed limitations, and extracting equivalent circuit models. It recommends textbooks and outlines the course topics as reviewing semiconductor devices and pn diodes, studying long pn diodes incorporating recombination, examining BJT DC operation and switching characteristics, and why studying devices is important.
This document provides an overview of the basic electronics subject code 3110016. It includes topics such as digital fundamentals, microprocessors, analog and digital communication, and mobile communication. The contents section lists specific topics that will be covered, including diode theory and applications, bipolar junction transistors and biasing, special purpose diodes and transistors, AC analysis of BJT circuits, field effect transistors and biasing, and digital circuits. Reference books are also provided.
Fisika Zat Padat (5 - 7) b-metal_vs_semiconductorjayamartha
The document discusses metal-semiconductor junctions, including their structure, band diagrams, and behavior under applied bias. When a metal and semiconductor come into contact, electrons flow until their Fermi levels align, creating a depletion region. Surface states in the semiconductor pin the Fermi level, affecting the barrier height. Under forward bias, the barrier decreases and current flows via thermionic emission or drift-diffusion. Metal-semiconductor junctions are useful for applications like ohmic contacts and doping profiling due to their majority carrier operation and low barriers.
The document discusses the structure and behavior of metal-semiconductor junctions, comparing them to p-n junctions. It covers the band structure and barrier formation at the junction, both with and without surface states. Applying a voltage bias changes the depletion width and electric field. Current flows as majority carriers cross the lowered barrier. Models describe the barrier transit rates, and applications include ohmic contacts, doping profiling, and diodes. Metal-semiconductor junctions are useful due to majority-carrier operation and low forward current barriers.
The document discusses metal-semiconductor junctions, including:
1. The structure of the junction and how energy bands evolve with the metal and semiconductor coming together. Surface states at the semiconductor surface pin the Fermi level.
2. Applying a voltage bias changes the potential barrier and depletion region width, affecting current flow.
3. Current is modeled as thermionic emission of majority carriers over the altered potential barrier, with the net current dependent on bias voltage. Models of the barrier transit rate R further develop current expressions.
This document outlines the course objectives, outcomes, contents, and units for a Basic Electronics course at Matrusri Engineering College. The course aims to teach students about the characteristics, design concepts, and applications of diodes, transistors, feedback amplifiers, oscillators, and operational amplifiers. Specific topics covered include rectifier and regulator circuits, biasing of BJTs and FETs, oscillator design, logic gates, and data acquisition systems. One unit focuses on semiconductor materials and diode circuit design, while another covers Zener diodes, voltage regulators, and the construction and applications of cathode ray tubes in oscilloscopes.
The document summarizes the superjunction concept in power MOSFETs. It introduces the limitation of conventional power MOSFETs in achieving high voltage and describes how the superjunction structure addresses this by using alternating n-type and p-type pillars in the drift region. This allows the electric field to be distributed two-dimensionally rather than triangulary, enabling higher doping levels, lower resistivity, and higher breakdown voltages compared to conventional devices. However, the superjunction structure is more difficult to fabricate due to the high aspect ratios required. Future work may involve relaxed geometries, charge sheet approximations, or implementing the design in wide bandgap semiconductors.
Nanowire Based FET Biosensors and Their Biomedical Applications. Fawad Majeed...Fawad Majeed
This document discusses nanowire-based biosensors and their applications in biomedicine. It begins by defining sensors and biosensors. Nanowires can be used as sensors due to their distinct electrical and optical properties. There are two main types of nanosensors: mechanical and chemical. Nanowire field-effect transistors can detect charged biomolecules through changes in conductivity. These sensors have been used to detect proteins, DNA, RNA and viruses by functionalizing the nanowire surface with specific receptors. While promising for detection, further improvements are needed for commercialization, such as enhanced sensitivity and simpler fabrication processes.
The document discusses a course on basic electronics at Matrusri Engineering College. It includes:
1. The course objectives are to understand the characteristics and design concepts of diodes, transistors, feedback amplifiers, oscillators, and operational amplifiers.
2. The course outcomes are for students to be able to analyze and design rectifier, regulator, amplifier, and oscillator circuits and understand the performance of transistors.
3. The first module will cover the characteristics of PN junctions, including half wave and full wave rectifiers, and diodes such as Zener diodes.
Organic field-effect transistors (OFETs) use organic semiconductors like pentacene that can be deposited through low-cost solution processing. OFETs have the potential for applications requiring flexibility and large-area coverage. Pentacene has shown high carrier mobility, with mobilities on par with amorphous silicon in the best OFETs. While progress has been made, understanding charge transport and developing n-type and ambipolar materials remains an area of ongoing research to further improve organic electronics.
This dissertation focuses on the design, fabrication, and analysis of high voltage 4H-SiC devices for power electronics applications. It proposes new edge termination techniques like multiple floating zone junction termination extension and non-equally spaced floating field rings to improve breakdown voltage of 10kV PiN rectifiers. Experimental results verify these techniques. It also investigates the frequency capabilities of 15kV 4H-SiC MOSFETs, asymmetric IGBTs and symmetric IGBTs when used in solid state transformers. The study finds the symmetric IGBT is best up to 10kHz due to its trade-off between turn-off energy loss and forward voltage.
The document discusses the development of charge exchange injection and production of circulating proton beams with intensities greater than the space charge limit. It summarizes early work at Novosibirsk INP in the 1960s-1970s on accumulating proton beams using charge exchange injection up to the space charge limit. It also describes observations of the electron-proton instability in coasting beams and methods for damping instabilities. Later work was able to produce proton beams with intensities up to 9 times above the space charge limit through compensation of the beam space charge by secondary electrons. Diagnostics such as residual gas ionization monitors were important for characterizing the circulating beams.
simulation of piezoelectric nanofibers for harvesting energygrond1
1) The document simulates piezoelectric nanofibers for energy harvesting applications using COMSOL Multiphysics software. PZT nanofibers are constructed via electrospinning and deposited on interdigitated electrodes on a silicon substrate.
2) The simulation models piezoelectric nanofibers made of PZT under various pressures. It defines the materials and mesh properties and applies boundary conditions to the electrodes.
3) The results show the output voltage at different frequencies and pressures. The conclusion discusses optimizing the nanofibers by changing the flexible polymer material to improve energy harvesting performance.
The document provides an overview of physics topics covered in intermediate and degree-level syllabi for exams such as JAM, ANUPGCET, and job exams for positions like JL and DL. It discusses topics in areas like mechanics, properties of matter, electromagnetism, optics, and modern physics. For intermediate-level, it specifically outlines topics in areas like magnetism, electrostatics, current electricity, and electromagnetism. These include Coulomb's law, magnetic field, capacitance, resistance, Biot-Savart law, Faraday's law, and LCR circuits. The degree-level syllabus expands on areas of electricity, magnetism, electronics, and electromagnetism.
Transient Electronics: as per the name defines itself "lasting only for a short time"these devices can very well be used in covert operations where they can simply disappear after serving their purpose.Help in reducing e-waste.
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Accident detection system project report.pdfKamal Acharya
The Rapid growth of technology and infrastructure has made our lives easier. The
advent of technology has also increased the traffic hazards and the road accidents take place
frequently which causes huge loss of life and property because of the poor emergency facilities.
Many lives could have been saved if emergency service could get accident information and
reach in time. Our project will provide an optimum solution to this draw back. A piezo electric
sensor can be used as a crash or rollover detector of the vehicle during and after a crash. With
signals from a piezo electric sensor, a severe accident can be recognized. According to this
project when a vehicle meets with an accident immediately piezo electric sensor will detect the
signal or if a car rolls over. Then with the help of GSM module and GPS module, the location
will be sent to the emergency contact. Then after conforming the location necessary action will
be taken. If the person meets with a small accident or if there is no serious threat to anyone’s
life, then the alert message can be terminated by the driver by a switch provided in order to
avoid wasting the valuable time of the medical rescue team.
Home security is of paramount importance in today's world, where we rely more on technology, home
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model training and face detection with simple keyboard commands. Our goal is to introduce an innovative
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and provides real-time monitoring. If an unfamiliar face is detected, it promptly sends an email alert,
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