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INCHANGE Semiconductor isc Product Specification
isc website:www.iscsemi.cn
isc Thyristors 5P4M
APPLICATIONS
·Motor speed control for household
appliance.
·Temperature control for heater and
constant temperature box.
·Constant voltage power source and
battery charger.
·Automotive application such as regulator.
·Various solid state relay etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER MIN UNIT
VDRM Repetitive peak off-state voltage 400 (note:RGK=1kΩ) V
VRRM Repetitive peak reverse voltage 400 (note:RGK=1kΩ) V
IT(AV) On-state current 5(Tc=103℃,θ=180°Single phase(1/2wave) A
ITSM Surge non-repetitive on-state current 80 A
PGM Peak gate power dissipation 5 (f ≥50Hz, Duty ≤10%) W
PG(AV) Average gate power dissipation 0.5 W
IFGM Peak gate forward current 2 (f ≥50Hz, Duty ≤10%) A
VRGM Peak gate reverse voltage 10 V
Tj Junction temperature -40 to + 125 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT
IRRM Repetitive peak reverse current VRM=VRRM,Tj=125℃ 2 mA
IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃ 2 mA
VTM On-state voltage ITM=10A 1.4 V
IGT Gate-trigger current VDM=6V;RL=100Ω 10 mA
VGT Gate-trigger voltage VDM=6V;RL=100Ω 1.5 V
VGD Gate non-trigger voltage VDRM=1/2VDRM,Tj=125℃ 0.2 V
IH Holding current VD=24V 10 mA
Rth(j-c) Thermal resistance Junction to case 3 ℃/W

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Scr 5p4m datasheet

  • 1. INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.cn isc Thyristors 5P4M APPLICATIONS ·Motor speed control for household appliance. ·Temperature control for heater and constant temperature box. ·Constant voltage power source and battery charger. ·Automotive application such as regulator. ·Various solid state relay etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive peak off-state voltage 400 (note:RGK=1kΩ) V VRRM Repetitive peak reverse voltage 400 (note:RGK=1kΩ) V IT(AV) On-state current 5(Tc=103℃,θ=180°Single phase(1/2wave) A ITSM Surge non-repetitive on-state current 80 A PGM Peak gate power dissipation 5 (f ≥50Hz, Duty ≤10%) W PG(AV) Average gate power dissipation 0.5 W IFGM Peak gate forward current 2 (f ≥50Hz, Duty ≤10%) A VRGM Peak gate reverse voltage 10 V Tj Junction temperature -40 to + 125 ℃ ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT IRRM Repetitive peak reverse current VRM=VRRM,Tj=125℃ 2 mA IDRM Repetitive peak off-state current VDM=VDRM,Tj=125℃ 2 mA VTM On-state voltage ITM=10A 1.4 V IGT Gate-trigger current VDM=6V;RL=100Ω 10 mA VGT Gate-trigger voltage VDM=6V;RL=100Ω 1.5 V VGD Gate non-trigger voltage VDRM=1/2VDRM,Tj=125℃ 0.2 V IH Holding current VD=24V 10 mA Rth(j-c) Thermal resistance Junction to case 3 ℃/W