Hitachi introduces new EV and HEV IGBT MBB600TV6A (650V 600A 6 in 1), which more than 300,000 units have been sold successfully in Japan already, making it proven technology. *Soon bringing the Temperature sensor on IGBT chip: MBB800TW6A (650V 800A 6 in 1). -------------------------------------------------------------------------------------------------------------------------------- Hitachi Power Semiconductor Devices Direct Pin Liquid Cooling Technology has been applied on more than 600,000 units and is continuously improving with new units to hit the market rated at 800A this year and 1000A later on. Among some of the features are: • High speed, low loss IGBT module • Low thermal impedance due to direct liquid cooling • High reliability, high durability module • Operating Junction Temperatures range from -50*C to +150*C • Small footprint 163x94 mm package • Three thermistor sensors, one per each phase leg • Compact and stable sealing structure and thermal grease‐free The Hitachi’s Direct Pin Liquid Cooling IGBTs offers (1) low thermal resistance realized by thermal-greaseless “direct-liquid-cooling” technology with pin-fin, whose pressure drop and fin efficiency are optimally designed, (2) small package size, which enables compact power conditioner system, (3) high reliability and long lifetime realized by high strength Si3N4 insulated substrate and newly developed RoHS bonding technologies. The thermal resistance Rj-w of the IGBT module is reduced by 35 percent when compared to “indirect-cooling” conventional modules using thermal grease. The developed IGBT module and channel cover jacket are approximately 37 percent lighter and 45 percent smaller when compared to conventional modules with the same power capability. Applications • EV / HEV / PHEV • Commercial Electric Vehicles

1. 6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P1/8)
MBB600TV6ASilicon N-channel IGBT
1. FEATURES
* High speed, low loss IGBT module.
* Low thermal impedance due to direct liquid cooling.
* High reliability, high durability module.
2. ABSOLUTE MAXIMUM RATINGS (Tc=25
o
C )
Item Symbol Unit Specification
Collector Emitter Voltage VCES V 650
Gate Emitter Voltage VGES V 20
Collector Current
DC IC
A
600
1ms ICp 1200
Forward Current
DC IF
A
600
1ms IFM 1200
Maximum Junction Temperature Tjmax
o
C 175
Temperature under switching
conditions
Tjop
o
C -40 ~ +150
Storage Temperature Tstg
o
C -40 ~ +125
Isolation Voltage VISO VRMS 2,500 (AC 1 minute)
Screw Torque
Terminals (M6) -
N·m
6.0 (1)
Mounting (M5) - 4.0 (2)
Notes: Recommended Value (1)5.5±0.5N·m (2)3.5±0.5N·m
3. ELECTRICAL CHARACTERISTICS
Item Symbol Unit Min. Typ. Max. Test Conditions
Collector Emitter Cut-Off Current I CES mA - - 1.0 Vce=650V, Vge=0V, Tj=25
o
C
Gate Emitter Leakage Current IGES nA - - ±500 Vge=20V, Vce=0V, Tj=25
o
C
Collector Emitter Saturation Voltage VCE(sat) V
1.3 1.65 2.1 Ic=600A, Vge=15V, Tj=25
o
C
- 1.9 - Ic=600A, Vge=15V, Tj=150
o
C
Gate Emitter Threshold Voltage VGE(TO) V 6.0 6.7 7.5 Vce=5V, Ic=600mA, Tj=25
o
C
Input Capacitance Cies nF - 53 - Vce=10V, Vge=0V, f=100kHz, Tj=25
o
C
Switching Times
Rise Time tr
s
- 0.15 0.4 Vcc=300V, Ic=600A
Ls=30nH , R(ext)=4.7Ω, Cge=56nF
Vge=+15V/0V, Tj=150
o
C
Inductive load
Turn On Time ton - 0.50 0.9
Fall Time tf - 0.35 0.8
Turn Off Time toff - 1.20 2.0
Peak Forward Voltage Drop VF V
1.1 1.45 1.8 If=600A, VGE=0V, Tj=25
o
C
- 1.5 - If=600A, VGE=0V, Tj=150
o
C
Reverse Recovery Time trr s - 0.35 0.8 VCC=300V, Ic=600A,
Ls=30nH, Rg(ext)=4.7Ω, Cge=56nF
Vge=+15V/0V, Tj=150
o
C
Inductive load
Turn On Loss Eon(full) mJ/P - 20 30
Turn Off Loss Eoff(full) mJ/P - 45 65
Reverse Recovery Loss Err(full) mJ/P - 15 23
Thermistor Resistance R kΩ
- 5 - Tc=25
o
C
- 0.16 - Tc=150
o
C
Leakage Current between Thermistor
and Other Terminals
mA - - 0.1 V=600Vp
Thermal Resistance
IGBT Rth(j-w) K /W - - 0.145 Junction to water/fin, 10l/min, 50%LLC
(per 1 arm)FWD Rth(j-w) K /W - - 0.21
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
DWN.
CHKD.
M. Inaba Sep.26, 2014
T. Kushima
APPD. Y. Nemoto
Sep.26, 2014
Sep.26, 2014

2. 6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 P2/8
MBB600TV6A
4. PACKAGE OUTLINE DRAWING
Weight : 900g
Unit in mm

3. 6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P3/8)
MBB600TV6A
5. CIRCUIT DIAGRAM
6. PRODUCT LABEL
7. DEFINITION OF THE SYMBOLS
Thermistor T1, T2 and T3 are located on the
same ceramic substrate with the IGBT and
diode chips of phase U, V and W, respectively.
Note: This temperature measurement is not
suitable for the short circuit or short term over-
load detection and should be used only for the
module protection against long term overload or
malfunction of the cooling system.

4. 6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P4/8)
MBB600TV6A
8. STATIC CHARACTERISTICS
Collector to Emitter Voltage vs. Gate to Emitter Voltage Collector to Emitter Voltage vs. Gate to Emitter Voltage
Collector Current vs. Collector to Emitter VoltageCollector Current vs. Collector to Emitter Voltage
コレクタ電流IC(A)
Collector to Emitter Voltage
コレクタ・エミッタ間電圧 VCE(V)
CollectorCurrent
TYPICAL
9V
10V
11V
VGE=15V14V13V12V
0
200
400
600
800
1000
1200
0 2 4 6 8 10
Tc=150℃
8V
Voltage sence:
CS＊-E＊（＊：1～6）
0
2
4
6
8
10
12
0 5 10 15 20
コレクタ・エミッタ間電圧VCE(V)
Gate to Emitter Voltage
ゲート・エミッタ間電圧 VGE(V)
CollectortoEmitterVoltage
TYPICAL
Tc=150℃
Ic=1200A
Ic=600A
Voltage sence:
CS＊-E＊（＊：1～6）
コレクタ電流IC(A)
Collector to Emitter Voltage
コレクタ・エミッタ間電圧 VCE(V)
CollectorCurrent
TYPICAL
10V
VGE=15V14V13V12V11V
0
200
400
600
800
1000
1200
0 2 4 6 8 10
Tc=25℃
8V
9V
Voltage sence:
CS＊-E＊（＊：1～6）
0
2
4
6
8
10
12
0 5 10 15 20
コレクタ・エミッタ間電圧VCE(V)
Gate to Emitter Voltage
ゲート・エミッタ間電圧 VGE(V)
CollectortoEmitterVoltage
TYPICAL
Tc=25℃
Ic=1200A
Ic=600A
Voltage sence:
CS＊-E＊（＊：1～6）

5. 6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P5/8)
MBB600TV6A
9. DYNAMIC CHARACTERISTICS
TYPICAL
SwitchingTime
コレクタ電流 IC(A)
CollectorCurrent
スイッチング時間t(μS)
0
0.5
1
1.5
2
2.5
0 100 200 300 400 500 600 700
VCC=300V
VGE=+15V/0V
Rgon/RGoff=4.7Ω
Cge=56nF
Tc=150℃
Ls≒30nH
Inductive Load
toff
tf
tr
ton
trr
Gate Charge Characteristics Forward Voltage of Free-Wheeling Diode
ゲート・エミッタ間電圧 VGE(V)
ゲート電荷 QG(nC)
Gate Charge
GatetoEmitterVoltage
TYPICAL
0
5
10
15
20
Vcc=300V
Ic=600A
Tc=25℃
0 20001000
Switching Time vs. Collector Current Switching Time vs. Gate Resistance
ForwardCurrent
順電圧 VF(V)
Forward Voltage
順電流IF(A)
TYPICAL
0
200
400
600
800
1000
1200
0 1 2 3 4 5
VGE=0
Tc=25℃
Tc=150℃
Voltage sence:
CS＊-E＊（＊：1～6）

6. 6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P6/8)
MBB600TV6A
0
20
40
60
80
100
120
0 5 10 15 20
SwitchingLoss
ゲート抵抗 RG(Ω)
Gate Resistance
スイッチング損失Eon,Eoff,Err(mJ/pulse)
TYPICAL
VCC＝300V
VGE＝+15/0V
IC＝600A
Cge=56nF
Tc＝150℃
Ls≒30nH
Inductive Load
Eoff
Eon
Err
Voltage sense；
CS* - E* (*：1～6)
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
TransientThermalImpedance
時間 t(s)
Time
過渡熱抵抗Rth(j-c)(K/W)
Diode
IGBT
10l/min(LLC50%)
Reverse Bias Safe Operation Area (RBSOA)
Switching Loss vs. Collector Current Switching Loss vs. Gate Resistance
Transient Thermal Impedance Characteristics
CollectorCurrent
コレクタ・エミッタ間電圧 VCE(V)
Collector to Emitter Voltage
コレクタ電流IC(A)
1
10
100
1000
10000
0 100 200 300 400 500 600 700 800
VGE＝+15V/0V
Tc≦150℃
Voltage sence:
CS＊-E＊（＊：1～6）

7. 6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P7/8)
MBB600TV6A
0
200
400
600
800
1000
1200
1400
1600
0 100 200 300 400 500 600 700 800
CollectorCurrent(ForwardCurrent)
コレクタ・エミッタ間電圧 VCE(V)
Collectorto Emitter Voltage
コレクタ電流-IC(=IF)(A)
VGE=+15/0V
Tc≦150℃
Voltage sense:
CS* - E* (*:1～6)
10. THERMISTOR
Reverse Recovery Safe Operation Area (RRSOA)
Resistance vs. Temperature
0.1
1
10
020406080100120
抵抗値(kΩ)
温度 (℃)
For reference(Data from manufacturer)
Temperature
Resistance
Table1 Specifications of Thermistor(For reference)
Nominal zero-power resistance 5kΩ ±3％（25℃）
B value 3375K±2％（25～50℃）
Operating temperature range ‐50～150℃
Thermal time constant（in still air) Approx. 10 sec.

8. 6in1 IGBT Module Spec.No.IGBT-SP-10011-R4 (P8/8)
MBB600TV6A
HITACHI POWER SEMICONDUCTORS
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Hitachi power semiconductor home page address http://www.hitachi-power-semiconductor-device.co.jp/en/
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change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
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before use.
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control, aerospace and aviation, traffic equipment, life-support-related medical
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be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
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assumes no responsibility for any intellectual property claims or any other problems that
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