dokumen.tips_pn-junction-diode-568738ab628ab.ppt
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This document discusses the basics of PN junction diodes. It covers: 1. The structure of a PN junction, where a P-type semiconductor is joined to an N-type semiconductor, creating a depletion layer. 2. In a forward bias, the depletion layer disappears and current can flow. In a reverse bias, the depletion layer widens and current cannot flow. 3. Diodes only allow current to flow in one direction, from the P to the N material. Their characteristic voltage drop is around 0.7V for silicon diodes.
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DiodesBIOE 3300 – Biomedical Electronics(Chapter 10).docx
Diodes
BIOE 3300 – Biomedical Electronics
(Chapter 10)
1
Applications
Signal Processing
(e.g.Rectification)
Power Supplies
AC to DC Conversion
Voltage supply regulation
Electronic Device Protection
Surge Protection (e.g. ECG/ Defibrillator)
Light Sources
Light Emitting Diodes
Laser Diodes
2
What are diodes?
Semiconductor based electronic components that only permit current to flow in a given direction
More specifically, diodes allow for the manipulation of normal circuit behavior
Cause currents to deviate from expected path
3
What Are Diodes Made Out Of?
Semiconductor material: normally silicon (Si) or Germanium (Ge) doped with select impurities
n-type material: electrons move freely
p-type material: impurities result in positive charged particles known as holes
A natural barrier exists across the pn junction which holds free electrons on n-side and holes on p-side
4
What Are Diodes Made Out Of?
Si and Ge are both group 4 elements, meaning they have 4 valence electrons.
Their structure allows them to grow in a shape called the diamond lattice.
In the diamond lattice, each atom shares its valence electrons with its four closest neighbors.
This sharing of electrons is what ultimately allows diodes to be built.
When dopants from groups 3 or 5 (in most cases) are added to Si or Ge. It changes the properties of the material so we are able to make the P- and N-type materials that become the diode.
The diagram above shows the 2D structure of the Si crystal. The light lines represent the electronic bonds made when the valence electrons are shared. Each Si atom shares one electron with each of its four closest neighbors so that its valence band will have a full 8 electrons.
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
5
The Periodic Table of Elements
6
N Type Material
N-Type Material:
When extra valence electrons are introduced into a material such as silicon, an n-type material is produced.
The extra valence electrons are introduced by putting impurities or dopants into the silicon.
The dopants used to create an n-type material are Group V elements. The most commonly used dopants from Group V are arsenic, antimony and phosphorus.
The 2D diagram to the left shows the extra electron that will be present when a Group V dopant is introduced to a material such as silicon. This extra electron is very mobile.
+4
+4
+5
+4
+4
+4
+4
+4
+4
7
P Type Material
P-Type Material:
P-type material is produced when the dopant introduced is from Group III.
Group III elements have only 3 valence electrons and therefore there is an electron missing.
This creates a hole (h+), or a positive charge that can move around in the material.
Commonly used Group III dopants are aluminum, boron, and gallium.
The 2D diagram to the left shows the hole that will be present when a Group III dopant is .
DiodesBIOE 3300 – Biomedical Electronics(Chapter 10).docx
Diodes
BIOE 3300 – Biomedical Electronics
(Chapter 10)
1
Applications
Signal Processing
(e.g.Rectification)
Power Supplies
AC to DC Conversion
Voltage supply regulation
Electronic Device Protection
Surge Protection (e.g. ECG/ Defibrillator)
Light Sources
Light Emitting Diodes
Laser Diodes
2
What are diodes?
Semiconductor based electronic components that only permit current to flow in a given direction
More specifically, diodes allow for the manipulation of normal circuit behavior
Cause currents to deviate from expected path
3
What Are Diodes Made Out Of?
Semiconductor material: normally silicon (Si) or Germanium (Ge) doped with select impurities
n-type material: electrons move freely
p-type material: impurities result in positive charged particles known as holes
A natural barrier exists across the pn junction which holds free electrons on n-side and holes on p-side
4
What Are Diodes Made Out Of?
Si and Ge are both group 4 elements, meaning they have 4 valence electrons.
Their structure allows them to grow in a shape called the diamond lattice.
In the diamond lattice, each atom shares its valence electrons with its four closest neighbors.
This sharing of electrons is what ultimately allows diodes to be built.
When dopants from groups 3 or 5 (in most cases) are added to Si or Ge. It changes the properties of the material so we are able to make the P- and N-type materials that become the diode.
The diagram above shows the 2D structure of the Si crystal. The light lines represent the electronic bonds made when the valence electrons are shared. Each Si atom shares one electron with each of its four closest neighbors so that its valence band will have a full 8 electrons.
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
5
The Periodic Table of Elements
6
N Type Material
N-Type Material:
When extra valence electrons are introduced into a material such as silicon, an n-type material is produced.
The extra valence electrons are introduced by putting impurities or dopants into the silicon.
The dopants used to create an n-type material are Group V elements. The most commonly used dopants from Group V are arsenic, antimony and phosphorus.
The 2D diagram to the left shows the extra electron that will be present when a Group V dopant is introduced to a material such as silicon. This extra electron is very mobile.
+4
+4
+5
+4
+4
+4
+4
+4
+4
7
P Type Material
P-Type Material:
P-type material is produced when the dopant introduced is from Group III.
Group III elements have only 3 valence electrons and therefore there is an electron missing.
This creates a hole (h+), or a positive charge that can move around in the material.
Commonly used Group III dopants are aluminum, boron, and gallium.
The 2D diagram to the left shows the hole that will be present when a Group III dopant is .
Basic electronics (p-n Junction)
A p-n junction diode allows current to flow easily in one direction, but blocks it in the other. It is made up of p-type and n-type semiconductor material. In forward bias, current flows when the positive terminal is connected to the p-side and negative to the n-side. In reverse bias, little to no current flows when the connections are reversed. An ideal diode model approximates the diode as having zero resistance in forward bias and infinite resistance in reverse bias.
Diodes
Electrical current, voltage, resistance, capacitance, and inductance are a few of the basic elements of electronics and radio. Apart from current, voltage, resistance, capacitance, and inductance, there are many other interesting elements to electronic technology. ... Use Electronics Notes to learn electronics online.
Diodes.ppt
This document provides an overview of diodes, including:
1) Diodes are made from semiconductor materials like silicon and gallium arsenide and contain a pn junction.
2) A pn junction is formed by combining a p-type and n-type semiconductor, creating a depletion region.
3) Diodes can be forward or reverse biased, affecting the width of the depletion region and current flow.
4) Diode circuit models of increasing complexity are presented to calculate current flow based on the applied voltage and diode characteristics.
PPT-On-PN-Junction-Diode.pptx
This document discusses n-type and p-type semiconductor materials. N-type materials are produced by doping silicon with group V elements like arsenic, which add extra electrons. P-type materials are produced by doping with group III elements like boron, which create "holes" where electrons are missing. When a p-type and n-type material are joined, a PN junction forms with a depletion region between them. A PN junction allows current to flow easily in one direction but blocks it in the other direction. Different types of diodes like Zener diodes and photodiodes have specialized functions but all use the basic PN junction design.
Diodes
This document discusses diodes and their applications. It begins with an introduction to diodes, including what a diode is, the P-N junction, and diode characteristics when forward and reverse biased. It then covers types of diodes like LEDs, Zener diodes, and more. Applications discussed include logic gates, temperature measurement, and power conversion. The document focuses on rectifiers, explaining half-wave and full-wave rectification and how diodes are used to convert AC to DC in power supplies. Circuit diagrams are provided to illustrate the principles and components of half-wave and full-wave rectifiers, including the addition of a capacitor filter.
Diodes
This document provides an overview of diodes, including:
- What materials diodes are made from, such as silicon, germanium, and gallium arsenide.
- How n-type and p-type materials are created by doping semiconductors with different elements.
- How a pn junction is formed and its properties when biased, including the depletion region.
- Diode circuit models of increasing complexity, from ideal diode to models including barrier potential and resistance.
- Key diode characteristics like the shockley equation, transconductance curve, and dynamic resistance.
- Examples of calculating diode operating points and voltage drops in circuits.
- Different types of
Recommended
DiodesBIOE 3300 – Biomedical Electronics(Chapter 10).docx
Diodes
BIOE 3300 – Biomedical Electronics
(Chapter 10)
1
Applications
Signal Processing
(e.g.Rectification)
Power Supplies
AC to DC Conversion
Voltage supply regulation
Electronic Device Protection
Surge Protection (e.g. ECG/ Defibrillator)
Light Sources
Light Emitting Diodes
Laser Diodes
2
What are diodes?
Semiconductor based electronic components that only permit current to flow in a given direction
More specifically, diodes allow for the manipulation of normal circuit behavior
Cause currents to deviate from expected path
3
What Are Diodes Made Out Of?
Semiconductor material: normally silicon (Si) or Germanium (Ge) doped with select impurities
n-type material: electrons move freely
p-type material: impurities result in positive charged particles known as holes
A natural barrier exists across the pn junction which holds free electrons on n-side and holes on p-side
4
What Are Diodes Made Out Of?
Si and Ge are both group 4 elements, meaning they have 4 valence electrons.
Their structure allows them to grow in a shape called the diamond lattice.
In the diamond lattice, each atom shares its valence electrons with its four closest neighbors.
This sharing of electrons is what ultimately allows diodes to be built.
When dopants from groups 3 or 5 (in most cases) are added to Si or Ge. It changes the properties of the material so we are able to make the P- and N-type materials that become the diode.
The diagram above shows the 2D structure of the Si crystal. The light lines represent the electronic bonds made when the valence electrons are shared. Each Si atom shares one electron with each of its four closest neighbors so that its valence band will have a full 8 electrons.
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
5
The Periodic Table of Elements
6
N Type Material
N-Type Material:
When extra valence electrons are introduced into a material such as silicon, an n-type material is produced.
The extra valence electrons are introduced by putting impurities or dopants into the silicon.
The dopants used to create an n-type material are Group V elements. The most commonly used dopants from Group V are arsenic, antimony and phosphorus.
The 2D diagram to the left shows the extra electron that will be present when a Group V dopant is introduced to a material such as silicon. This extra electron is very mobile.
+4
+4
+5
+4
+4
+4
+4
+4
+4
7
P Type Material
P-Type Material:
P-type material is produced when the dopant introduced is from Group III.
Group III elements have only 3 valence electrons and therefore there is an electron missing.
This creates a hole (h+), or a positive charge that can move around in the material.
Commonly used Group III dopants are aluminum, boron, and gallium.
The 2D diagram to the left shows the hole that will be present when a Group III dopant is .
DiodesBIOE 3300 – Biomedical Electronics(Chapter 10).docx
Diodes
BIOE 3300 – Biomedical Electronics
(Chapter 10)
1
Applications
Signal Processing
(e.g.Rectification)
Power Supplies
AC to DC Conversion
Voltage supply regulation
Electronic Device Protection
Surge Protection (e.g. ECG/ Defibrillator)
Light Sources
Light Emitting Diodes
Laser Diodes
2
What are diodes?
Semiconductor based electronic components that only permit current to flow in a given direction
More specifically, diodes allow for the manipulation of normal circuit behavior
Cause currents to deviate from expected path
3
What Are Diodes Made Out Of?
Semiconductor material: normally silicon (Si) or Germanium (Ge) doped with select impurities
n-type material: electrons move freely
p-type material: impurities result in positive charged particles known as holes
A natural barrier exists across the pn junction which holds free electrons on n-side and holes on p-side
4
What Are Diodes Made Out Of?
Si and Ge are both group 4 elements, meaning they have 4 valence electrons.
Their structure allows them to grow in a shape called the diamond lattice.
In the diamond lattice, each atom shares its valence electrons with its four closest neighbors.
This sharing of electrons is what ultimately allows diodes to be built.
When dopants from groups 3 or 5 (in most cases) are added to Si or Ge. It changes the properties of the material so we are able to make the P- and N-type materials that become the diode.
The diagram above shows the 2D structure of the Si crystal. The light lines represent the electronic bonds made when the valence electrons are shared. Each Si atom shares one electron with each of its four closest neighbors so that its valence band will have a full 8 electrons.
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
Si
+4
5
The Periodic Table of Elements
6
N Type Material
N-Type Material:
When extra valence electrons are introduced into a material such as silicon, an n-type material is produced.
The extra valence electrons are introduced by putting impurities or dopants into the silicon.
The dopants used to create an n-type material are Group V elements. The most commonly used dopants from Group V are arsenic, antimony and phosphorus.
The 2D diagram to the left shows the extra electron that will be present when a Group V dopant is introduced to a material such as silicon. This extra electron is very mobile.
+4
+4
+5
+4
+4
+4
+4
+4
+4
7
P Type Material
P-Type Material:
P-type material is produced when the dopant introduced is from Group III.
Group III elements have only 3 valence electrons and therefore there is an electron missing.
This creates a hole (h+), or a positive charge that can move around in the material.
Commonly used Group III dopants are aluminum, boron, and gallium.
The 2D diagram to the left shows the hole that will be present when a Group III dopant is .
Basic electronics (p-n Junction)
A p-n junction diode allows current to flow easily in one direction, but blocks it in the other. It is made up of p-type and n-type semiconductor material. In forward bias, current flows when the positive terminal is connected to the p-side and negative to the n-side. In reverse bias, little to no current flows when the connections are reversed. An ideal diode model approximates the diode as having zero resistance in forward bias and infinite resistance in reverse bias.
Diodes
Electrical current, voltage, resistance, capacitance, and inductance are a few of the basic elements of electronics and radio. Apart from current, voltage, resistance, capacitance, and inductance, there are many other interesting elements to electronic technology. ... Use Electronics Notes to learn electronics online.
Diodes.ppt
This document provides an overview of diodes, including:
1) Diodes are made from semiconductor materials like silicon and gallium arsenide and contain a pn junction.
2) A pn junction is formed by combining a p-type and n-type semiconductor, creating a depletion region.
3) Diodes can be forward or reverse biased, affecting the width of the depletion region and current flow.
4) Diode circuit models of increasing complexity are presented to calculate current flow based on the applied voltage and diode characteristics.
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This document discusses n-type and p-type semiconductor materials. N-type materials are produced by doping silicon with group V elements like arsenic, which add extra electrons. P-type materials are produced by doping with group III elements like boron, which create "holes" where electrons are missing. When a p-type and n-type material are joined, a PN junction forms with a depletion region between them. A PN junction allows current to flow easily in one direction but blocks it in the other direction. Different types of diodes like Zener diodes and photodiodes have specialized functions but all use the basic PN junction design.
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This document discusses diodes and their applications. It begins with an introduction to diodes, including what a diode is, the P-N junction, and diode characteristics when forward and reverse biased. It then covers types of diodes like LEDs, Zener diodes, and more. Applications discussed include logic gates, temperature measurement, and power conversion. The document focuses on rectifiers, explaining half-wave and full-wave rectification and how diodes are used to convert AC to DC in power supplies. Circuit diagrams are provided to illustrate the principles and components of half-wave and full-wave rectifiers, including the addition of a capacitor filter.
Diodes
This document provides an overview of diodes, including:
- What materials diodes are made from, such as silicon, germanium, and gallium arsenide.
- How n-type and p-type materials are created by doping semiconductors with different elements.
- How a pn junction is formed and its properties when biased, including the depletion region.
- Diode circuit models of increasing complexity, from ideal diode to models including barrier potential and resistance.
- Key diode characteristics like the shockley equation, transconductance curve, and dynamic resistance.
- Examples of calculating diode operating points and voltage drops in circuits.
- Different types of
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This document provides information on n-type and p-type materials, the pn junction, and properties of diodes. It describes how n-type materials are produced by doping silicon with group V elements like arsenic, creating extra electrons. P-type materials are made by doping with group III elements like boron, introducing holes. When a p-type and n-type material meet, a pn junction forms with a depletion region. Diodes can be forward or reverse biased, affecting current flow. The Shockley equation models diode behavior. Different types of diodes include Zener diodes, LEDs, and photodiodes.
Diode
The document discusses the basics of a p-n junction diode. It explains that a diode is made by joining p-type and n-type semiconductor materials, forming a depletion zone at the junction. Current can only flow from the p-side (anode) to the n-side (cathode). Applying a forward bias lowers the potential barrier, allowing current to flow. A reverse bias widens the depletion zone, preventing current from flowing.
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Lecture 5
A diode consists of a p-n junction between a p-type and n-type semiconductor material. In the forward bias state, it allows current to flow easily but blocks it in the reverse bias state. The p-n junction forms a depletion region that acts as a barrier, requiring around 0.7V for silicon or 0.3V for germanium to overcome. When forward biased, the barrier is lowered and majority carriers flow. When reversed biased, the barrier increases and only minority carriers contribute to a small saturation current.
Fkdkdkdkdkkdkdjdjdjddmdmdkkdkdkdkdkdkdp.pptx
N-type materials are produced by doping silicon with group V elements like arsenic or phosphorus, which add extra electrons. P-type materials are produced by doping with group III elements like boron, which create "holes" where electrons are missing. When a p-type and n-type material are joined, a pn junction is formed with a depletion region of no free charges between the charged p and n regions. When a voltage is applied across the junction, it can be forward or reverse biased, affecting the width of the depletion region and allowing or blocking the flow of current. Diodes made of pn junctions demonstrate the Shockley diode equation and have uses including rectification, zener regulation, light emission
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N-type materials are produced by doping silicon with group V elements like arsenic or phosphorus, which add extra electrons. P-type materials are produced by doping with group III elements like boron, which create "holes" where electrons are missing. When a p-type and n-type material are joined, a PN junction is formed with a depletion region between them. Current can flow easily through the junction in one direction but not the other, forming the basis of diode behavior. Diodes have applications as rectifiers, Zener diodes, light emitters, and light sensors.
Fffffffffffkdkdkdkdkdkdkdkdkdkdkdkdkpppt.pptx
N-type materials are produced by doping silicon with group V elements like arsenic or phosphorus, which add extra electrons. P-type materials are produced by doping with group III elements like boron, which create "holes" where electrons are missing. When a p-type and n-type material are joined, a PN junction is formed with a depletion region between them. Current can flow easily through the junction in one direction but not the other, forming the basis of diode behavior. Diodes have applications as rectifiers, Zener diodes, light emitters, and light sensors.
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This document discusses different types of diodes used in electronics. It describes p-n junction diodes, Zener diodes, light emitting diodes, and photo diodes. It explains how p-n junction diodes are made using silicon or germanium semiconductor material with added impurities to create n-type and p-type regions. When these regions are attached, a p-n junction is formed. It also discusses half-wave and full-wave rectifiers used to convert AC to DC, and how Zener diodes allow current to flow in both directions above a breakdown voltage.
Pn junction diode by sarmad baloch
Pn junction diode by sarmad baloch
I AM SARMAD KHOSA
BSIT (5TH A)
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The document discusses PN-junction diodes and their general applications. It begins by explaining that a diode is formed by placing a P-type and N-type semiconductor together, forming a PN junction. Electrons diffuse from the N to P side and holes diffuse from the P to N side, creating a depletion region. This process stops when an electric field is produced that opposes further diffusion. General applications of diodes include using them in half-wave and full-wave rectifier circuits to convert AC to DC, and filter circuits to remove AC components from the rectified output. Diodes also find use as LEDs, in transistors, and have many other applications like switching, amplifying and oscillating.
Lec-2.pdf
This document discusses the PN junction diode. It begins by explaining why PN junction diodes are important nonlinear circuit elements used for signal rectification. It then describes how a PN junction forms when a P-type and N-type semiconductor are joined, creating a depletion region. Under forward bias, there is a small voltage drop and large current flow; under reverse bias, there is a large voltage but small reverse saturation current. The document also covers I-V characteristics, temperature and diode approximations, and key diode specifications like breakdown voltage and knee voltage.
Lec-2.pdf
This document discusses the PN junction diode. It begins by explaining why PN junction diodes are important nonlinear circuit elements used for signal rectification. It then describes how a PN junction forms when a P-type and N-type semiconductor are joined, creating a depletion region. Under forward bias, there is a small voltage drop and large current flow; under reverse bias, there is a large voltage but small reverse saturation current. The document outlines the current components under different bias conditions and shows the diode's I-V characteristics curve. It also discusses factors like temperature effects, diode approximations, load line analysis, and important diode terms.
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This document summarizes key concepts about semiconductor diodes:
- Diodes are electronic devices created by joining a p-type and n-type semiconductor, allowing current to flow easily in one direction. They are used for rectification in circuits.
- P-type materials have an excess of holes, making them positively charged, while N-type materials have an excess of electrons, giving them a negative charge.
- Diodes conduct current easily when forward biased by applying positive voltage to the p-side and negative to the n-side. They do not conduct in the reverse biased state.
- The Shockley diode equation models the current-voltage relationship of an ideal diode based on thermal voltage and
Diode theory
This document discusses diode theory and characteristics. It explains that a diode is a non-linear device because its current-voltage graph is not a straight line due to the barrier potential. It describes how a diode can be forward or reverse biased depending on how it is connected in a circuit. The knee voltage, ideal diode characteristics, and approximations that account for the barrier potential and bulk resistance are also covered. Load lines and how they are used to determine operating points are summarized.
Diode
This document discusses diodes and their applications. It begins by defining a diode as an electronic component that allows current to flow in only one direction. The main application of diodes is rectification, where an alternating current is converted to direct current. The document describes different types of diodes and how they work in forward and reverse bias. Examples are provided to calculate current flow through an ideal diode under forward and reverse bias conditions.
Semiconductors
This document discusses semiconductors and diodes. It defines P-type and N-type semiconductors, where P-type materials have holes as majority carriers and are positively charged, and N-type materials have electrons as majority carriers and are negatively charged. Diodes are electronic devices created by joining a P-type and N-type semiconductor, and are used for rectification and other applications. The document goes on to explain forward and reverse bias of diodes, their I-V characteristics including the Shockley equation, and applications of diodes such as rectification.
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The document provides an overview of semiconductor diodes, including their basic operation, characteristics, and testing. It describes how diodes are made from doped silicon or germanium and form a p-n junction. Diodes can be forward or reverse biased, and exhibit non-linear current-voltage characteristics depending on the bias condition. The document also discusses factors that affect diodes like temperature, capacitance, and recovery time. Other types of diodes like Zener diodes and LEDs are introduced.
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A diode consists of a p-n junction between a p-type and n-type semiconductor material. In the forward bias state, it allows current to flow easily but blocks it in the reverse bias state. The p-n junction forms a depletion region that acts as a barrier, requiring around 0.7V for silicon or 0.3V for germanium to overcome. When forward biased, the barrier is lowered and majority carriers flow. When reversed biased, the barrier increases and only minority carriers contribute to a small saturation current.
Fkdkdkdkdkkdkdjdjdjddmdmdkkdkdkdkdkdkdp.pptx
N-type materials are produced by doping silicon with group V elements like arsenic or phosphorus, which add extra electrons. P-type materials are produced by doping with group III elements like boron, which create "holes" where electrons are missing. When a p-type and n-type material are joined, a pn junction is formed with a depletion region of no free charges between the charged p and n regions. When a voltage is applied across the junction, it can be forward or reverse biased, affecting the width of the depletion region and allowing or blocking the flow of current. Diodes made of pn junctions demonstrate the Shockley diode equation and have uses including rectification, zener regulation, light emission
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N-type materials are produced by doping silicon with group V elements like arsenic or phosphorus, which add extra electrons. P-type materials are produced by doping with group III elements like boron, which create "holes" where electrons are missing. When a p-type and n-type material are joined, a PN junction is formed with a depletion region between them. Current can flow easily through the junction in one direction but not the other, forming the basis of diode behavior. Diodes have applications as rectifiers, Zener diodes, light emitters, and light sensors.
Fffffffffffkdkdkdkdkdkdkdkdkdkdkdkdkpppt.pptx
N-type materials are produced by doping silicon with group V elements like arsenic or phosphorus, which add extra electrons. P-type materials are produced by doping with group III elements like boron, which create "holes" where electrons are missing. When a p-type and n-type material are joined, a PN junction is formed with a depletion region between them. Current can flow easily through the junction in one direction but not the other, forming the basis of diode behavior. Diodes have applications as rectifiers, Zener diodes, light emitters, and light sensors.
8. semiconductors.rr
This document provides an overview of semiconductors and diodes. It discusses how semiconductors conduct electricity through the movement of electrons and holes. It describes intrinsic and extrinsic conduction in semiconductors and how doping with elements like boron and phosphorus creates p-type and n-type materials. The document explains how a PN junction forms a diode and how diodes can be forward or reverse biased to control current flow. It provides details on rectifier diodes, signal diodes, LEDs, and zener diodes.
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PN Junction diode
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#physicspptclub #In this video we will study about the Transistor , symbol of transistor , types of transistor, operation of transistor , configurations of transistor, advantages of transistor and limitations of transistor.
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Ankit singh
This document discusses different types of diodes used in electronics. It describes p-n junction diodes, Zener diodes, light emitting diodes, and photo diodes. It explains how p-n junction diodes are made using silicon or germanium semiconductor material with added impurities to create n-type and p-type regions. When these regions are attached, a p-n junction is formed. It also discusses half-wave and full-wave rectifiers used to convert AC to DC, and how Zener diodes allow current to flow in both directions above a breakdown voltage.
Pn junction diode by sarmad baloch
Pn junction diode by sarmad baloch
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Diodes
The document discusses PN-junction diodes and their general applications. It begins by explaining that a diode is formed by placing a P-type and N-type semiconductor together, forming a PN junction. Electrons diffuse from the N to P side and holes diffuse from the P to N side, creating a depletion region. This process stops when an electric field is produced that opposes further diffusion. General applications of diodes include using them in half-wave and full-wave rectifier circuits to convert AC to DC, and filter circuits to remove AC components from the rectified output. Diodes also find use as LEDs, in transistors, and have many other applications like switching, amplifying and oscillating.
Lec-2.pdf
This document discusses the PN junction diode. It begins by explaining why PN junction diodes are important nonlinear circuit elements used for signal rectification. It then describes how a PN junction forms when a P-type and N-type semiconductor are joined, creating a depletion region. Under forward bias, there is a small voltage drop and large current flow; under reverse bias, there is a large voltage but small reverse saturation current. The document also covers I-V characteristics, temperature and diode approximations, and key diode specifications like breakdown voltage and knee voltage.
Lec-2.pdf
This document discusses the PN junction diode. It begins by explaining why PN junction diodes are important nonlinear circuit elements used for signal rectification. It then describes how a PN junction forms when a P-type and N-type semiconductor are joined, creating a depletion region. Under forward bias, there is a small voltage drop and large current flow; under reverse bias, there is a large voltage but small reverse saturation current. The document outlines the current components under different bias conditions and shows the diode's I-V characteristics curve. It also discusses factors like temperature effects, diode approximations, load line analysis, and important diode terms.
Patrick Henry Entropic - Characteristics of Semiconductor Diode
This document summarizes key concepts about semiconductor diodes:
- Diodes are electronic devices created by joining a p-type and n-type semiconductor, allowing current to flow easily in one direction. They are used for rectification in circuits.
- P-type materials have an excess of holes, making them positively charged, while N-type materials have an excess of electrons, giving them a negative charge.
- Diodes conduct current easily when forward biased by applying positive voltage to the p-side and negative to the n-side. They do not conduct in the reverse biased state.
- The Shockley diode equation models the current-voltage relationship of an ideal diode based on thermal voltage and
Diode theory
This document discusses diode theory and characteristics. It explains that a diode is a non-linear device because its current-voltage graph is not a straight line due to the barrier potential. It describes how a diode can be forward or reverse biased depending on how it is connected in a circuit. The knee voltage, ideal diode characteristics, and approximations that account for the barrier potential and bulk resistance are also covered. Load lines and how they are used to determine operating points are summarized.
Diode
This document discusses diodes and their applications. It begins by defining a diode as an electronic component that allows current to flow in only one direction. The main application of diodes is rectification, where an alternating current is converted to direct current. The document describes different types of diodes and how they work in forward and reverse bias. Examples are provided to calculate current flow through an ideal diode under forward and reverse bias conditions.
Semiconductors
This document discusses semiconductors and diodes. It defines P-type and N-type semiconductors, where P-type materials have holes as majority carriers and are positively charged, and N-type materials have electrons as majority carriers and are negatively charged. Diodes are electronic devices created by joining a P-type and N-type semiconductor, and are used for rectification and other applications. The document goes on to explain forward and reverse bias of diodes, their I-V characteristics including the Shockley equation, and applications of diodes such as rectification.
Ch01
The document provides an overview of semiconductor diodes, including their basic operation, characteristics, and testing. It describes how diodes are made from doped silicon or germanium and form a p-n junction. Diodes can be forward or reverse biased, and exhibit non-linear current-voltage characteristics depending on the bias condition. The document also discusses factors that affect diodes like temperature, capacitance, and recovery time. Other types of diodes like Zener diodes and LEDs are introduced.
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Patrick Henry Entropic - Characteristics of Semiconductor Diode
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dokumen.tips_pn-junction-diode-568738ab628ab.ppt
- 1. 1 PN Junction / DIODE Bollen
- 2. 2 AGENDA Bollen SEMICONDUCTOR Pure silicium P material boron doped N material stibium doped P material and N material PN junction PN junction layer 0V7 PN junction characteristic DIODE characteristic DIODE DC and ac resistance DIODE load line DIODE flipped resistorline DIODE DC resistance DIODE ac resistance
- 3. 3 Semiconductor, pure silicium Bollen Pure silicium 4 electrons Ideal is to have 8 So share with your neighbour Co-valence bounding Electrical neutral
- 4. 4 Semiconductor, pure silicium Bollen Pure silicium 4 electrons Ideal is to have 8 So share with your neighbour Co-valence bounding Electrical neutral
- 5. 5 Semiconductor, P material boron doped Bollen P material = silicium (+4) boron (+3) doped Boron misses 1 positvie charge (positon) & 1 negative charge (electron) Co-valence bounding Electrical neutral P material misses one electron, or has a place for one electron, this is called a free hole
- 6. 6 Semiconductor, N material stibium doped Bollen N material = silicium (+4) stibium (+5) doped Stibium has got extra 1 positive charge (positon) & 1 negative charge (electron) Co-valence bounding Electrical neutral N material has got one extra electron out of the bounding, this is called a free electron
- 7. 7 P material and N material Bollen N material = Free electrons P material = Free holes
- 8. 8 PN junction Bollen Anode = P=material Kathode = N material KNAP = handsome K = Negative A = Positive
- 9. 9 PN junction, depletion layer 0V7 Bollen Depletion layer can be made Wider by external reverse voltage Smaller by External froward voltage Depletion layer; Uth = 0V7
- 10. 10 PN junction, characteristic Bollen Forward Depletion layer is gone Ud > 0V7 Current can flow Reverse Depletion layer is wider Ud < 0V0 Current can NOT flow
- 11. 11 Diode, characteristic Bollen a Diode Is a one way street for current
- 12. 12 Diode, characteristic Bollen Assumption Treshold Voltage for silicium Ud = 0V7 for germanium Ud = 0V2
- 13. 13 Diode, characteristic Bollen Where id = diode current Vd= diode voltage KT/q = 26 mV Iss = leakage current (1uA)
- 14. 14 Diode, DC and ac resistance Bollen
- 15. 15 Diode, Load line Bollen How to calculate the exact value of vd and id; Graphical; use load line, indicates the load of the diode
- 16. 16 Diode, Load line Bollen For shure id = ir = i For shure vs = vd + vr
- 17. 17 Diode, Load line Bollen For shure For shure id = ir = i vs = vd + vr
- 18. 18 Diode, Flipped resistor line Bollen Flip the resistor line and push the two curves horizontally to fit; vs = vd + vr
- 19. 19 Diode, Load line Bollen The flipped resistor line is called LOAD-LINE
- 20. 20 Diode, DC resistance Bollen For DC resistance use the load line method For large voltages normally Vd= 0V7 is used
- 21. 21 Diode, ac resistance Bollen Differentiating gives Rd = Δvd/Δid = 26 mV / Id Where kT/q = 26 mV