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Local probe of metal-insulator transitions
[object Object],[object Object],[object Object],[object Object],[object Object]
Out of equilibrium transport Collective tuneling E field Oka, T. & Aoki, H Physical Review Letters 95 , 137601 (2005). Correlated Insultors Band Insultors
Measurements Out of equilibrium transport in VO 2
VO 2 : from metal to Mott insulator Two problems: - Joule heating - inhomogeous sample E = 3  10 6 V/m M. M. Qazilbash, et. al. Science Vol. 318 no. 5857 pp. 1750-1753 (2007). 300K 5  m VO 2
Microscope  AFM/STM/EFM C:sersXWuesktopork-amplify3.jpg tip etching f 0 30 000Hz 3 modes T~400-30K  H=9T Conducting AFM STM EFM (Electrostatic force microscopy) D:士毕业论文写作hesis_BXWu010-05-04igureshapter-5etup.jpg
VO 2 : Conducting AFM mode  Local I(V) curves of the metal/insultor transition 100nm Substrat VO 2 1  m E = 5  10 7 V/m After I(V) curve C:sersabUseresktoputputfter_4-ZAbsolue_IN_2_SFSxM_Image_file215.bmp C:sersabUseresktoputputO2 thin films topoZAbsolue_IN_2_SFSxM_Image_file91.bmp
Electrostatic force microscopy (EFM) mode U électrostatic = F électrostatic = SAMPLE f 0 V tip/sampe -  U électrostatic  f   F/  z At the frequency 2  (600Hz) F. J. Giessibl, Reviews of Modern Physics 75, 949 (2003). 2 2 1 CV
≠ λ D Why do we expect a capacitive modulation  in a metal to insulator transition? C I ∝ 1/(d+ λ D ) d C M ∝ 1/d Tip/Metal sample capacitance Tip/Insulator sample capacitance
EFM Mode in VO 2 Random telegraphic noise (RTN) appears at 300K for VO 2 only. VO 2
Consistency checks RTN only appears at: - low tip/sample dinstance < 90nm -  High voltage >6V
Tunnel mode
VO 2 conclusion ,[object Object],[object Object],[object Object],[object Object]

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Local probe of metal insulator transitions

  • 1. Local probe of metal-insulator transitions
  • 2.
  • 3. Out of equilibrium transport Collective tuneling E field Oka, T. & Aoki, H Physical Review Letters 95 , 137601 (2005). Correlated Insultors Band Insultors
  • 4. Measurements Out of equilibrium transport in VO 2
  • 5. VO 2 : from metal to Mott insulator Two problems: - Joule heating - inhomogeous sample E = 3  10 6 V/m M. M. Qazilbash, et. al. Science Vol. 318 no. 5857 pp. 1750-1753 (2007). 300K 5  m VO 2
  • 6. Microscope AFM/STM/EFM C:sersXWuesktopork-amplify3.jpg tip etching f 0 30 000Hz 3 modes T~400-30K H=9T Conducting AFM STM EFM (Electrostatic force microscopy) D:士毕业论文写作hesis_BXWu010-05-04igureshapter-5etup.jpg
  • 7. VO 2 : Conducting AFM mode Local I(V) curves of the metal/insultor transition 100nm Substrat VO 2 1  m E = 5  10 7 V/m After I(V) curve C:sersabUseresktoputputfter_4-ZAbsolue_IN_2_SFSxM_Image_file215.bmp C:sersabUseresktoputputO2 thin films topoZAbsolue_IN_2_SFSxM_Image_file91.bmp
  • 8. Electrostatic force microscopy (EFM) mode U électrostatic = F électrostatic = SAMPLE f 0 V tip/sampe -  U électrostatic  f   F/  z At the frequency 2  (600Hz) F. J. Giessibl, Reviews of Modern Physics 75, 949 (2003). 2 2 1 CV
  • 9. ≠ λ D Why do we expect a capacitive modulation in a metal to insulator transition? C I ∝ 1/(d+ λ D ) d C M ∝ 1/d Tip/Metal sample capacitance Tip/Insulator sample capacitance
  • 10. EFM Mode in VO 2 Random telegraphic noise (RTN) appears at 300K for VO 2 only. VO 2
  • 11. Consistency checks RTN only appears at: - low tip/sample dinstance < 90nm - High voltage >6V
  • 13.