ICIECA 2014 Paper

1. Design and analysis of vlsi
architecture using ambipolar
MISFETs
Presented by
Anjali Ashok K A
M.E. VLSI Design
VSB Engineering College
Karur

2. ABSTRACT
 Organic and inorganic thin film
based transistor plays a major role
in future generation electronic
devices
 Self-assembled monolayer organic
dielectric material Trichloro
(Octadecyl) Silane (TOS)
 High- κ inorganic dielectric material
Zirconium dioxide(ZrO2)

3. Cont.
 Silver (Ag) as the metal at the top of
the device as Source and Drain,
pursued by the stack of TOS and
ZrO2 as the Insulator
 Ambipolar operation
 Reduced power consumption

4. INTRODUCTION
 Emergence of MOS technology
 Difficulty in SiO2 gate oxide scaling
 High dielectric-constant introduced
 ZrO2
high dielectric constant
low leakage current

5. BLOCK DIAGRAM

6.  sol-gel technique - Zirconium (IV)
Prop oxide (2mL) in proper
proportion with Iso Propyl Alcohol
(9mL).
 Acetyl acetone in Iso Propyl
Alcohol was used as a gelatine
agent.
 Zirconia coated onto the glass plate
 Poly ethylene terephthalate –to
reduce adhesion

7. STRUCTURE OF
TRANSISTOR

8. EXPERIMENTAL
ARRANGEMENT OF
LAYERS

9. STRUCTURE OF DRAM
CELL

10. IV CHARACTERISTICS OF
STACKED TFT

11. IV CHARACTERISTICS

12. SEM IMAGE OF ORGANIC
POLYMER

13. SEM IMAGE OF NANO
ZIRCONIA

14. CONCLUSION

15. THANK YOU