3. Amplifiers used in cellular base stations
[3] R. Giofrè, L. Piazzon, P. Colantonio and F. Giannini, “Being Seventy-Five Still Young: The Doherty Power Amplifier,”
Microwave Journal, April 2012, pp. 72-88.
[4] Bumman Kim, Jangheon Kim, Ildu Kim, and Jeonghyeon Cha, “The Doherty Power Amplifier,” IEEE Microwave
Magazine, Oct. 2006, pp. 42-50. [5]
Pre
2003
2003-
2005
2005 2010
2010-
Present
Feed-forward
Class AB
Class AB with DPD
Doherty with memory
based DPD
Enhanced Video
bandwidth
Doherty and its
novel approaches
4. Doherty Power Amplifier
[6] W. H. Doherty, “New High Efficiency Power Amplifier for Modulated Waves,” Proceedings of Institute of Radio
Engineers, vol.24, no.9, pp. 1163-1182, Sept.1936
[3] and Internet Source: http://en.wikipedia.org/wiki/Doherty_amplifier
Aug 21, 1907 - Feb 15, 2000
• Invented by William H. Doherty at Bell Labs in
1936
• Originally, class B carrier and class B peaking
amps (both tubes, of course, its 1930’s)
• Later modified by Joseph B. Sainton of Continental
Microwave, giving it a form it today has.
5. Doherty Amplifier Architecture
Carrier Amplifier
Peaking Amplifier
PowerSplitter Offset Lines
QuarterWave
Transformer
Load
Quarter Wave
Transformer
Input
Output
Low power: peaking amp pinched off, representing open circuit at recombination point
High power: carrier amp remains saturated, peaking adapts load and reaches max
efficiency
Typically class C
Typically class AB
6. Doherty Amplifier operation
[7] Joongjin Nam, Jin-Ho Shin, and Bumman Kim, “A Handset Power Amplifier With High Efficiency at a
Low Level Using Load-Modulation Technique,” IEEE Transactions on Microwave Theory and Techniques,
vol. 53, no. 8, August 2005, pp. 2639-2644. [4] and [8]
Doherty Amplifier
working can be
explained using load
modulation
principle.
Fig. Reproduced from: [7]
7. Device Selection: CGH40010, GaN HEMT:
Large Signal Model
[38], [41], [42]
[43] Kazutaka Inoue et al., “High Power and High Efficiency GaN-HEMT for Microwave
Communication Applications,” IMWS-IWPT2011 Proceedings, pp. 267-270.
16. References 1
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Issues and Challenges,” Communication Surveys and Tutorials, IEEE, vol.13, no.4, pp. 524-540, Fourth
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3. R. Giofrè, L. Piazzon, P. Colantonio and F. Giannini, “Being Seventy-Five Still Young: The Doherty
Power Amplifier,” Microwave Journal, April 2012, pp. 72-88.
4. Bumman Kim, Jangheon Kim, Ildu Kim, and Jeonghyeon Cha, “The Doherty Power Amplifier,” IEEE
Microwave Magazine, Oct. 2006, pp. 42-50.
5. Damon Holmes, “Doherty Power Amplifier Theory and Design for Cellular Infrastructure Applications,”
presented at EDI CON 2013, Beijing China.
6. W. H. Doherty, “New High Efficiency Power Amplifier for Modulated Waves,” Proceedings of Institute
of Radio Engineers, vol.24, no.9, pp. 1163-1182, Sept.1936.
7. Joongjin Nam, Jin-Ho Shin, and Bumman Kim, “A Handset Power Amplifier With High Efficiency at a
Low Level Using Load-Modulation Technique,” IEEE Transactions on Microwave Theory and
Techniques, vol. 53, no. 8, August 2005, pp. 2639-2644.
8. Paolo Colantonio, Franco Giannini, and Ernesto Limiti, High Efficiency RF and Microwave Solid State
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www.rfdesign.com [June 2007]
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Magazine, August 2010, pp. 72-86.
17. References 2
11. R. Giofrè, L. Piazzon, P. Colantonio and F. Giannini, “Being Seventy-Five Still Young: The Doherty Power
Amplifier,” Microwave Journal, April 2012, pp. 72-88.
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Linearity of Microwave Doherty Amplifier,” Microwave Symposium Digest (MTT), 2001 IEEE MTT-S
International, 2001, vol. 2, pp. 1367-1370.
15. Bumman Kim, Jangheon Kim, Ildu Kim, and Jeonghyeon Cha, “The Doherty Power Amplifier,” IEEE
Microwave Magazine, Oct. 2006, pp. 42-50.
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Microwave Circuits and Systems, InTech Publishers, pp.107-132.
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2011.
18. David W. Runton, Michael LeFevre, Christopher Burns, “200W GaN Broadband, Quick-turn Doherty
Amplifier,” RF Micro Devices Chandler, AZ, Feb. 2012.
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Amplifier,” IEEE Microwave and Wireless Components Letters, vol. 18, no. 3, March 2008, pp. 197-199.
20. JorgeMorenoRubio et al., “ A 22 W 65% efficiency GaN Doherty power amplifier at 3.5GHz for WiMAX
applications,” IEEE Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC 2011), April 18th -
19th, 2011 in Vienna, Austria.
18. References 3
21. Kenle Chen et al., “Design of Adaptive Highly Efficient GaN Power Amplifier for Octave-Bandwidth
Application and Dynamic Load Modulation,” IEEE Transactions on Microwave Theory and Techniques, vol. 60,
no. 6, June 2012, pp. 1829-1839.
22. Khaled Bathich, Georg Boeck, “Wideband Harmonically-Tuned GaN Doherty Power Amplifier,” IEEE MTT-S
2012 International Microwave Symposium, Montreal, Canada.
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Line,” Proceedings of the 36th European Microwave Conference, Sept. 2006, Manchester UK.
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Base Station Power Amplifiers,” 35th Europian Microwave Conference, 2005, Paris, pp. 963-966.
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and Wireless Components Letters, vol. 20, no. 2, February 2010, pp. 109-111.
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Applications,” High Frequency Electronics, May 2009, pp. 36-48.
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Band,” MIKON 2012, 19th International Conference on Microwaves, Radar and Wireless Communications,
Warsaw, Poland, 21-23 May, 2012, pp. 186-189.
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Electromagnetics Research Letters, vol. 32, June 2012, pp.187-195.
29. Junghwan Moon et al., “Doherty Amplifier with Envelope Tracking for High Efficiency,” Microwave
Symposium Digest (MTT), 2010 IEEE MTT-S International, 23 28 May, 2010, pp. 1086-1089.
30. Junghwan Moon, Jangheon Kim, Ildu Kim, Jungjoon Kim, and Bumman Kim, “Highly Efficient Three-Way
Saturated Doherty Amplifier With Digital Feedback Predistortion,” IEEE Microwave and Wireless Components
Letters, vol. 18, no. 8, August 2008, pp. 539-541.
19. References 4
31. Asdesach Z. Markos and GUnter Kompa, “High Power Doherty Amplifier Design for UMTS Application,” Microwave
Conference (GeMIC), 2008, German, 10-12 March, 2008, pp. 1-4.
32. Craig Steinbeiser, Thomas Landon, Charles Suckling, “250W HVHBT Doherty with 57% WCDMA Efficiency
Linearized to -55dBc for 2c11 6.5dB PAR,” Compound Semiconductor Integrated Circuit Symposium, CSIC 2007,
IEEE, 14-17 Oct., 2007, pp. 1-4.
33. Ildu Kiml, and Bumman Kim, “A 2.655 GHz 3-stage Doherty Power Amplifier using Envelope Tracking Technique,”
Microwave Symposium Digest (MTT), 2010 IEEE MTT-S International, 23-28 May, 2010, pp. 1496-1498.
34. Hiroaki Deguchi, Norihiko Ui, Kaname Ebihara, Kazutaka Inoue, Norihiro Yoshimura and Hidenori Takahashi, “A 33W
GaN HEMT Doherty Amplifier with 55% Drain Efficiency for 2.6GHz Base Stations,” Microwave Symposium Digest
(MTT), 2009 IEEE MTT-S International, 7-12 June, 2009, pp. 1273-1276.
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36. KenleChen, Xiaoguang Liu, William J. Chappell and Dimitrios Peroulis, “Co-Design of Power Amplifier and
Narrowband Filter using High-Q Evanescent-Mode Cavity Resonator as the Output Matching Network ,” IEEE MTT-S
International Microwave Symposium, 2011, Baltimore, MD, USA.
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39. Arvind Raghavan, Deukhyoun Heo, Moonkyun Maeng, Albert Sutono, Kyutae Lim and Joy Laskar, “A 2.4 GHz High
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20. References 5
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High Frequency Electronics, June 2007, pp. 16-30.
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Applications,” IMWS-IWPT2011 Proceedings, pp. 267-270.
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21. References 6
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