1. Contribute to shorten the charging time of strobe circuit
High-voltage fast recovery diode MA2YF80
Overview
MA2YF80 is a Fast Recovery Diode, adequate for high-voltage. Unit : mm
As the device has high-speed trr characteristic and Low IR (Peak) 0.80±0.05
1.6±0.1
characteristic, it enables to reduce switching-loss drastically.
Ultra-thin surface mounting package is adopted and it enables stable 1
mounting accuracy to improve mounting efficiency by a flat lead 0 to 0.1
type package (0.8mm thickness and 3.5 × 1.6mm external
2.6±0.1
3.5±0.1
configuration, including a lead terminal. )
5˚
Feature
2
0.45±0.1
0.55±0.1 0.16+0.1
• High-speed trr and low IR (peak) characteristics. 5˚
–0.06
• Low switching loss
• Realized the ultra-thin package (Comparison with the conventional
0 to 0.1
products: from 1.1mm to 0.8mm)
0 to 0.3
• Flat lead type specification improved mounting accuracy and
soldering strength.
1: Anode
2: Cathode
Mini2 - F1
Applications
DSC strobe circuit (contributes to shorten the charging time)
High-speed switching circuit
Main Specifications
Absolute Maximum Rating (Ta=25℃)
Parameter Symbol Rating Unit
Reverse voltage VRRM 800 V
Peak reverse voltage VRSM 800 V
Forward current IF 200 mA
Non-repetitive peak forward surge current*1 IFSM 1 A
Junction temperature Tj -40 to +150 ℃
Storage temperature Tstg -40 to +150 ℃
Note)*1 : The peak-to-peak value in one cycle of 50 Hz sine wave (non-repetitive)
Electrical Characteristics (Ta=25℃)
Part Number Forward voltage Reverse current Terminal capacitance trr
VF (max) at IF =200mA IR (max) at VRRM=800V Ct (typ) (max)
MA2YF80 2.5 V 20 µA 2 pF 45 ns
Products and specifications are subject to change without notice. ,
Please ask for the latest Product Standards to guarantee the satisfaction
of your product requirements. 1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan
New publication, effective from 18 Nov. 2005 Tel. +81-75-951-8151
M00712AE http://panasonic.co.jp/semicon