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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBC10-060
MANUFACTURER: FUJI ELECTRIC




                     Bee Technologies Inc.




       All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                      1
Transfer Characteristics

Circuit Simulation result


                 25A



                 20A



                 15A




                 10A



                     5A



                     0A
                       0V               4V    8V             12V      16V        20V
                            I(U1:C)
                                                     V_VGE




Evaluation circuit




                                                   U1
                                                   1MBC10-060        VCE
                                                                     5Vdc
                                      VGE
                                      15Vdc




                                              0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                       2
Comparison Graph

Simulation result




Comparison table


Test condition: VCE =5 (V)


                                             VGE (V)
               IC (A)                                                       %Error
                               Measurement            Simulation
                     0.000                8.000                 7.950              -0.63
                     6.000               10.000                 9.870              -1.30
                    20.500               12.000               11.983               -0.14




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                           3
Fall Time Characteristics

Circuit Simulation result

                 10A



                     8A



                     6A



                     4A



                     2A



                     0A
                     9.6us   10.0us                 11.0us                12.0us   12.6us
                         I(RL)
                                                       Time




Evaluation circuit




                                                                         RL
                                             Rg                         29.8
                                                           U1
                            V1 = -15                       1MBC10-060
                            V2 = 15          220
                            TD = 0      V1
                            TR = 10n                                      VCE
                            TF = 1n                                       300Vdc
                            PW = 10u
                            PER = 1m

                                                      0




Test condition: IC=10 (A), VCC=300 (V)


       Parameter          Unit         Measurement                Simulation         %Error
            tf            us                       0.150                  0.151             0.46




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                   4
Gate Charge Characteristics

Circuit Simulation result


                 20V




                 15V




                 10V




                     5V




                     0V
                          0             10n         20n              30n              40n           50n
                              V(W1:1)
                                                          Time*1mA




Evaluation circuit

                                                                                V2



                                                                                0
                                                                                               I1
                                                                                      D2
                                                                                      Dbreak   10
                                                                         U1
                                                                         1MBC10-060
                      I1 = 0
                      I2 = 1m                  W1   W
                      TF = 10n                  +   IOFF = 100uA
                      TR = 10n                      ION = 0A                                   VCC
                      TD = 0       I2           -
                      PER = 700m                                                               300
                      PW = 7m

                                                                     0




Test condition: VCC=300 (V), IC=10 (A), VGE=15 (V)


         Parameter               Unit         Measurement                   Simulation               %Error
             Qge                   nc                  6.000                           6.054               0.90
             Qgc                   nc                 17.500                          16.829              -3.83
              Qg                   nc                 35.600                          35.952              0.99

                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                                  5
Saturation Characteristics

Circuit Simulation result


                 20A




                 10A




                     0A
                       0V            1.0V     2.0V    3.0V        4.0V   5.0V    6.0V
                            I(IC)
                                                     V(IC:-)




Evaluation circuit




                                                           U1             IC
                                                           1MBC10-060     0Adc
                                        VGE
                             15Vdc




                                                       0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                        6
Comparison Graph

Simulation result




Comparison table


Test condition: VGE =15 (V)

                                       VCE (V)
                IC (A)                                                    %Error
                              Measurement    Simulation
                          5          1.900          1.869                          -1.63
                         10          2.475          2.404                          -2.87
                         20          3.450          3.319                          -3.80




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                           7
Output Characteristics

Circuit Simulation result


                 20A

                                               20
                                                                    15
                                                   V                            12
                                                                     V
                 15A                                                            V



                 10A

                                                                                            10
                                                                                            V
                     5A



                                                                                     VGE=8
                     0A                                                                 V
                       0V            1.0V   2.0V             3.0V        4.0V        5.0V        6.0V
                            I(R1)
                                                            V_VCE




Evaluation circuit

                                                                    R1

                                                                0.001m




                                                           U1                    VCE
                                                           1MBC10-060            5Vdc

                                    VGE
                                    0




                                                       0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                        8

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SPICE MODEL of 1MBC10-060 (Professional Without Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBC10-060 MANUFACTURER: FUJI ELECTRIC Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 1
  • 2. Transfer Characteristics Circuit Simulation result 25A 20A 15A 10A 5A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 1MBC10-060 VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 2
  • 3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.000 8.000 7.950 -0.63 6.000 10.000 9.870 -1.30 20.500 12.000 11.983 -0.14 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 3
  • 4. Fall Time Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A 9.6us 10.0us 11.0us 12.0us 12.6us I(RL) Time Evaluation circuit RL Rg 29.8 U1 V1 = -15 1MBC10-060 V2 = 15 220 TD = 0 V1 TR = 10n VCE TF = 1n 300Vdc PW = 10u PER = 1m 0 Test condition: IC=10 (A), VCC=300 (V) Parameter Unit Measurement Simulation %Error tf us 0.150 0.151 0.46 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 4
  • 5. Gate Charge Characteristics Circuit Simulation result 20V 15V 10V 5V 0V 0 10n 20n 30n 40n 50n V(W1:1) Time*1mA Evaluation circuit V2 0 I1 D2 Dbreak 10 U1 1MBC10-060 I1 = 0 I2 = 1m W1 W TF = 10n + IOFF = 100uA TR = 10n ION = 0A VCC TD = 0 I2 - PER = 700m 300 PW = 7m 0 Test condition: VCC=300 (V), IC=10 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 6.000 6.054 0.90 Qgc nc 17.500 16.829 -3.83 Qg nc 35.600 35.952 0.99 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 5
  • 6. Saturation Characteristics Circuit Simulation result 20A 10A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(IC) V(IC:-) Evaluation circuit U1 IC 1MBC10-060 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 6
  • 7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VCE (V) IC (A) %Error Measurement Simulation 5 1.900 1.869 -1.63 10 2.475 2.404 -2.87 20 3.450 3.319 -3.80 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 7
  • 8. Output Characteristics Circuit Simulation result 20A 20 15 V 12 V 15A V 10A 10 V 5A VGE=8 0A V 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V I(R1) V_VCE Evaluation circuit R1 0.001m U1 VCE 1MBC10-060 5Vdc VGE 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 8