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Microelectronic Circuits
Nithin Kumar N.R.
Assistant Professor, NHCE, Bengaluru
MOSFET as Linear Amplifier
โ€ข In Saturation region, MOSFET acts as voltage controlled current source and
can be used to implement a transconductance amplifier.
โ€ข Id & VGS are non-linearly related to each other.
โ€ข ๐‘–๐‘‘ =
1
2
๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ
๐‘Š
๐ฟ
(๐‘‰๐บ๐‘† โˆ’ ๐‘‰๐‘ก)2
-Square Law
โ€ข To obtain linear amplification
โ€ข DC Biasing is done with MOSFET to operate at a certain VGS and then superimposing
a small vgs.
โ€ข superimposing a small AC voltage vgs to be amplified on DC bias Voltage VGS
โ€ข For this purpose, the transfer characteristics of the MOSFET is derived as
large signal operation.
โ€ข For all MOSFET is studied as a switch and then as an amplifier,
MOSFET as an Amplifier
โ€ข The figure shows the basic structure (skeleton) of the most
commonly used MOSFET amplifier, the common-source (CS)
circuit.
โ€ข The name common source arises because when the circuit is
viewed as two port network, the grounded source terminal is
common to both the input port (gate and source) and output
port (drain and source).
โ€ข Change in input voltage (Vgs ) gives rise to change in drain
current (id) by using a resistor RD to obtain output voltage (vo).
โ€ข ๐‘ฃ0 = ๐‘‰๐‘‘๐‘  = ๐‘‰๐ท๐ท โˆ’ ๐‘–๐‘‘๐‘…๐ท
โ€ข Thus transconductance amplifier is converted into a Voltage
amplifier.
โ€ข A DC supply is required to turn ON the device and supply
necessary power to operate.
Graphical Derivation of VTC-Load Line Analysis
โ€ข Relationship between id-Vds is given
by
โ€ข ๐‘ฃ0 = ๐‘‰๐‘‘๐‘  = ๐‘‰๐ท๐ท โˆ’ ๐‘–๐‘‘๐‘…๐ท
โ€ข ๐‘–๐‘‘ = ๐‘‰๐ท๐ท/๐‘…๐ท โˆ’ ๐‘‰๐‘‘๐‘ /๐‘…๐ท
โ€ข This straight line has a slope of -1/RD
โ€ข RD is load resistor of amplifier โ€“
Resistance across output.
โ€ข The line called as load line.
โ€ข vo=VDS for vi=VGS
Id
Vds
VDD
VDD /RD
Graphical Derivation of VTC-Load Line Analysis
Graphical Derivation of VTC-Load Line Analysis
Analytical Expression
โ€ข 3 region of operation
โ€ข Cutoff Region Segment XA
โ€ข ๐‘ฃ๐‘– โ‰ค ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ค ๐‘‰๐ท๐ท
โ€ข Saturation Region segment AQB
โ€ข ๐‘ฃ๐‘– โ‰ฅ ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ฅ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก
โ€ข Triode region segment BC
โ€ข ๐‘ฃ๐‘– โ‰ฅ ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ค ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก
Analytical Expression
Cutoff Region Segment XA
โ€ข ๐‘ฃ๐‘– โ‰ค ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ค ๐‘‰๐ท๐ท
The device will be off
Analytical Expression
โ€ข Saturation Region segment AQB
โ€ข ๐‘ฃ๐‘– โ‰ฅ ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ฅ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก
โ€ข ๐‘–๐‘‘ =
1
2
๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ
๐‘Š
๐ฟ
(๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก)2
โ€ข ๐‘ฃ0 = ๐‘‰๐ท๐ท โˆ’ ๐‘–๐‘‘๐‘…๐ท
โ€ข ๐‘ฃ๐‘œ = ๐‘‰๐ท๐ท โˆ’
1
2
๐‘…๐ท๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ
๐‘Š
๐ฟ
(๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก)2
To obtain voltage gain
๐ด๐‘ฃ =
๐‘‘๐‘ฃ0
๐‘‘๐‘ฃ๐‘–
โ€ข At operating point
Analytical Expression
Triode region segment BC
โ€ข ๐‘ฃ๐‘– โ‰ฅ ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ค ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก
โ€ข ๐‘–๐‘‘ = ๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ
๐‘Š
๐ฟ
๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก ๐‘ฃ๐‘œ โˆ’
1
2
๐‘ฃ๐‘œ
2
โ€ข ๐‘ฃ0 = ๐‘‰๐ท๐ท โˆ’ ๐‘–๐‘‘๐‘…๐ท
โ€ข ๐‘ฃ๐‘œ = ๐‘‰๐ท๐ท โˆ’ ๐œ‡๐‘›๐‘…๐ท๐ถ๐‘œ๐‘ฅ
๐‘Š
๐ฟ
๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก ๐‘ฃ๐‘œ โˆ’
1
2
๐‘ฃ๐‘œ
2
โ€ข Vo is small and thus approximated as
โ€ข ๐‘ฃ๐‘œ = ๐‘‰๐ท๐ท โˆ’ ๐œ‡๐‘›๐‘…๐ท๐ถ๐‘œ๐‘ฅ
๐‘Š
๐ฟ
๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก ๐‘ฃ๐‘œ
โ€ข Reduced to
โ€ข ๐‘ฃ๐‘œ = ๐‘‰๐ท๐ท /(1 + ๐œ‡๐‘›๐‘…๐ท๐ถ๐‘œ๐‘ฅ
๐‘Š
๐ฟ
๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก )
โ€ข ๐‘Ÿ๐‘‘๐‘  = 1/(1 + ๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ
๐‘Š
๐ฟ
๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก )
Operation as Switch
โ€ข As a switch it is operated at extreme points
of transfer curve
โ€ข The device is turned off
โ€ข vi<Vt operated in segment XA with vo=VDD
โ€ข The device is turned on
โ€ข By applying a voltage close to VDD with vo very
small
โ€ข As a switch it is operated in Points A and C
in VTC.
Biasing in MOS amplifier Circuits
โ€ข To design MOSFET as amplifier circuit we need to establish an
appropriate DC operating point for the MOSFET.
Biasing by fixing Vgs
โ€ข To fix the gate to source voltage to the value required to provide the
desired Ids.
โ€ข Vgs can be derived from VDD through an appropriate Voltage devider
or suitable reference voltage.
Biasing by fixing Vgs and connecting a
resistance in the source
โ€ข To fix the gate to source voltage to the value required to provide the
desired Ids.
โ€ข Vgs can be derived from VDD through an appropriate Voltage devider
or suitable reference voltage.

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MEC.pptx

  • 1. Microelectronic Circuits Nithin Kumar N.R. Assistant Professor, NHCE, Bengaluru
  • 2. MOSFET as Linear Amplifier โ€ข In Saturation region, MOSFET acts as voltage controlled current source and can be used to implement a transconductance amplifier. โ€ข Id & VGS are non-linearly related to each other. โ€ข ๐‘–๐‘‘ = 1 2 ๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ ๐‘Š ๐ฟ (๐‘‰๐บ๐‘† โˆ’ ๐‘‰๐‘ก)2 -Square Law โ€ข To obtain linear amplification โ€ข DC Biasing is done with MOSFET to operate at a certain VGS and then superimposing a small vgs. โ€ข superimposing a small AC voltage vgs to be amplified on DC bias Voltage VGS โ€ข For this purpose, the transfer characteristics of the MOSFET is derived as large signal operation. โ€ข For all MOSFET is studied as a switch and then as an amplifier,
  • 3. MOSFET as an Amplifier โ€ข The figure shows the basic structure (skeleton) of the most commonly used MOSFET amplifier, the common-source (CS) circuit. โ€ข The name common source arises because when the circuit is viewed as two port network, the grounded source terminal is common to both the input port (gate and source) and output port (drain and source). โ€ข Change in input voltage (Vgs ) gives rise to change in drain current (id) by using a resistor RD to obtain output voltage (vo). โ€ข ๐‘ฃ0 = ๐‘‰๐‘‘๐‘  = ๐‘‰๐ท๐ท โˆ’ ๐‘–๐‘‘๐‘…๐ท โ€ข Thus transconductance amplifier is converted into a Voltage amplifier. โ€ข A DC supply is required to turn ON the device and supply necessary power to operate.
  • 4. Graphical Derivation of VTC-Load Line Analysis โ€ข Relationship between id-Vds is given by โ€ข ๐‘ฃ0 = ๐‘‰๐‘‘๐‘  = ๐‘‰๐ท๐ท โˆ’ ๐‘–๐‘‘๐‘…๐ท โ€ข ๐‘–๐‘‘ = ๐‘‰๐ท๐ท/๐‘…๐ท โˆ’ ๐‘‰๐‘‘๐‘ /๐‘…๐ท โ€ข This straight line has a slope of -1/RD โ€ข RD is load resistor of amplifier โ€“ Resistance across output. โ€ข The line called as load line. โ€ข vo=VDS for vi=VGS Id Vds VDD VDD /RD
  • 5. Graphical Derivation of VTC-Load Line Analysis
  • 6. Graphical Derivation of VTC-Load Line Analysis
  • 7. Analytical Expression โ€ข 3 region of operation โ€ข Cutoff Region Segment XA โ€ข ๐‘ฃ๐‘– โ‰ค ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ค ๐‘‰๐ท๐ท โ€ข Saturation Region segment AQB โ€ข ๐‘ฃ๐‘– โ‰ฅ ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ฅ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก โ€ข Triode region segment BC โ€ข ๐‘ฃ๐‘– โ‰ฅ ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ค ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก
  • 8. Analytical Expression Cutoff Region Segment XA โ€ข ๐‘ฃ๐‘– โ‰ค ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ค ๐‘‰๐ท๐ท The device will be off
  • 9. Analytical Expression โ€ข Saturation Region segment AQB โ€ข ๐‘ฃ๐‘– โ‰ฅ ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ฅ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก โ€ข ๐‘–๐‘‘ = 1 2 ๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ ๐‘Š ๐ฟ (๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก)2 โ€ข ๐‘ฃ0 = ๐‘‰๐ท๐ท โˆ’ ๐‘–๐‘‘๐‘…๐ท โ€ข ๐‘ฃ๐‘œ = ๐‘‰๐ท๐ท โˆ’ 1 2 ๐‘…๐ท๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ ๐‘Š ๐ฟ (๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก)2 To obtain voltage gain ๐ด๐‘ฃ = ๐‘‘๐‘ฃ0 ๐‘‘๐‘ฃ๐‘– โ€ข At operating point
  • 10. Analytical Expression Triode region segment BC โ€ข ๐‘ฃ๐‘– โ‰ฅ ๐‘‰๐‘ก, and ๐‘ฃ๐‘œ โ‰ค ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก โ€ข ๐‘–๐‘‘ = ๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ ๐‘Š ๐ฟ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก ๐‘ฃ๐‘œ โˆ’ 1 2 ๐‘ฃ๐‘œ 2 โ€ข ๐‘ฃ0 = ๐‘‰๐ท๐ท โˆ’ ๐‘–๐‘‘๐‘…๐ท โ€ข ๐‘ฃ๐‘œ = ๐‘‰๐ท๐ท โˆ’ ๐œ‡๐‘›๐‘…๐ท๐ถ๐‘œ๐‘ฅ ๐‘Š ๐ฟ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก ๐‘ฃ๐‘œ โˆ’ 1 2 ๐‘ฃ๐‘œ 2 โ€ข Vo is small and thus approximated as โ€ข ๐‘ฃ๐‘œ = ๐‘‰๐ท๐ท โˆ’ ๐œ‡๐‘›๐‘…๐ท๐ถ๐‘œ๐‘ฅ ๐‘Š ๐ฟ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก ๐‘ฃ๐‘œ โ€ข Reduced to โ€ข ๐‘ฃ๐‘œ = ๐‘‰๐ท๐ท /(1 + ๐œ‡๐‘›๐‘…๐ท๐ถ๐‘œ๐‘ฅ ๐‘Š ๐ฟ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก ) โ€ข ๐‘Ÿ๐‘‘๐‘  = 1/(1 + ๐œ‡๐‘›๐ถ๐‘œ๐‘ฅ ๐‘Š ๐ฟ ๐‘ฃ๐‘– โˆ’ ๐‘‰๐‘ก )
  • 11. Operation as Switch โ€ข As a switch it is operated at extreme points of transfer curve โ€ข The device is turned off โ€ข vi<Vt operated in segment XA with vo=VDD โ€ข The device is turned on โ€ข By applying a voltage close to VDD with vo very small โ€ข As a switch it is operated in Points A and C in VTC.
  • 12. Biasing in MOS amplifier Circuits โ€ข To design MOSFET as amplifier circuit we need to establish an appropriate DC operating point for the MOSFET.
  • 13. Biasing by fixing Vgs โ€ข To fix the gate to source voltage to the value required to provide the desired Ids. โ€ข Vgs can be derived from VDD through an appropriate Voltage devider or suitable reference voltage.
  • 14. Biasing by fixing Vgs and connecting a resistance in the source โ€ข To fix the gate to source voltage to the value required to provide the desired Ids. โ€ข Vgs can be derived from VDD through an appropriate Voltage devider or suitable reference voltage.