SlideShare a Scribd company logo
1 of 2
Patents by Inventor Arsam Antreasyan
Ridge waveguide semiconductor laser with thin active region
Patent number: 5309465
Abstract: The present invention provides an improved semiconductor ridge waveguide
laser structure having a plurality of layers including an N-InP buffer layer and an N-type
InP substrate, a thin InGaAsP active layer 1100 Angstroms thickness, a P-InP graded
layer, an optional etch stop layer, a P-InP cladding layer and a P+InGaAs. The ridge
waveguide laser of the present invention demonstrates a very high reliability and the
fabrication process therefor is high yield. The ridge waveguide laser of the present
invention demonstrates very good high temperature behavior and the design suppresses
higher order modes.
Type: Grant
Filed: November 5, 1992
Issued: May 3, 1994
Assignee: International Business Machines Corporation
Inventors: Arsam Antreasyan, Greg Costrini, Peter D. Hoh
Waveguide ridge laser device with improved mounting and ridge protection
Patent number: 5305340
Abstract: A protection configuration for a semiconductor ridge waveguide laser structure
is disclosed wherein layers of protective metal in the form of walls, is applied on each
side of the ridge element of the ridged layer of the laser structure. The laser structure is
then bonded to a mounting plate in a junction side down orientation by solder or a
junction side up orientation by wire bonding. The metal layer may be composed of gold.
Type: Grant
Filed: December 16, 1992
Issued: April 19, 1994
Assignee: International Business Machines Corporation
Inventors: Arsam Antreasyan, Myra N. Boenke, Greg Costrini, Kurt R. Grebe, Christoph
Harder, Peter D. Hoh
Group III-V compound field effect transistor with diffusion barrier
Patent number: 4873558
Abstract: Group III-V compound MISFETs include a low-doped diffusion barrier layer
disposed between a source/drain contact-facilitating layer and the channel layer.
Type: Grant
Filed: February 23, 1988
Issued: October 10, 1989
Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories
Inventors: Arsam Antreasyan, Paul A. Garbinski, Vincent D. Mattera, Jr., Henryk
Temkin
patents

More Related Content

Viewers also liked (9)

Sandra
SandraSandra
Sandra
 
Kaitlyn Lydecker Resume 2016
Kaitlyn Lydecker Resume 2016Kaitlyn Lydecker Resume 2016
Kaitlyn Lydecker Resume 2016
 
Universidad técnica particular de loja
Universidad técnica particular de lojaUniversidad técnica particular de loja
Universidad técnica particular de loja
 
Результати анкетування щодо інноваційної діяльності
Результати анкетування щодо інноваційної діяльностіРезультати анкетування щодо інноваційної діяльності
Результати анкетування щодо інноваційної діяльності
 
Karunarathna
KarunarathnaKarunarathna
Karunarathna
 
Barloworld Power
Barloworld Power Barloworld Power
Barloworld Power
 
Inexpensive ways to boost the value of key biscayne waterfront condos (12)
Inexpensive ways to boost the value of key biscayne waterfront condos (12)Inexpensive ways to boost the value of key biscayne waterfront condos (12)
Inexpensive ways to boost the value of key biscayne waterfront condos (12)
 
Parcin koreea
Parcin koreeaParcin koreea
Parcin koreea
 
Leyndarmalið 16 25 (58 mb)
Leyndarmalið 16 25 (58 mb)Leyndarmalið 16 25 (58 mb)
Leyndarmalið 16 25 (58 mb)
 

Similar to patents

Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch AntennaStudy On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
IOSR Journals
 
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch AntennaStudy On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
IOSR Journals
 
A Review of Various Shapes Microstrip Patch Antenna for High Frequency Applic...
A Review of Various Shapes Microstrip Patch Antenna for High Frequency Applic...A Review of Various Shapes Microstrip Patch Antenna for High Frequency Applic...
A Review of Various Shapes Microstrip Patch Antenna for High Frequency Applic...
Deep Gokani
 

Similar to patents (20)

Parametric Analysis of Single Element U Slot Microstrip Antenna
Parametric Analysis of Single Element U Slot Microstrip AntennaParametric Analysis of Single Element U Slot Microstrip Antenna
Parametric Analysis of Single Element U Slot Microstrip Antenna
 
Design of Folded Rectangular Patch with Different Multidielectric Layer
Design of Folded Rectangular Patch with Different Multidielectric LayerDesign of Folded Rectangular Patch with Different Multidielectric Layer
Design of Folded Rectangular Patch with Different Multidielectric Layer
 
Fp35996999
Fp35996999Fp35996999
Fp35996999
 
Analysis of Multi-Band Characteristics of Fractal Shape Antenna
Analysis of Multi-Band Characteristics of Fractal Shape AntennaAnalysis of Multi-Band Characteristics of Fractal Shape Antenna
Analysis of Multi-Band Characteristics of Fractal Shape Antenna
 
Analysis of Multi-Band Characteristics of Fractal Shape Antenna
Analysis of Multi-Band Characteristics of Fractal Shape AntennaAnalysis of Multi-Band Characteristics of Fractal Shape Antenna
Analysis of Multi-Band Characteristics of Fractal Shape Antenna
 
Study on Substrate Dependency of Graphene-Based Patch Antennas for Gigahertz ...
Study on Substrate Dependency of Graphene-Based Patch Antennas for Gigahertz ...Study on Substrate Dependency of Graphene-Based Patch Antennas for Gigahertz ...
Study on Substrate Dependency of Graphene-Based Patch Antennas for Gigahertz ...
 
L1103047478
L1103047478L1103047478
L1103047478
 
Study on the effect of the substrate material type and thickness on the perfo...
Study on the effect of the substrate material type and thickness on the perfo...Study on the effect of the substrate material type and thickness on the perfo...
Study on the effect of the substrate material type and thickness on the perfo...
 
Simulation of 2.4 GHz microstrip patch antenna
Simulation of 2.4 GHz microstrip patch antenna Simulation of 2.4 GHz microstrip patch antenna
Simulation of 2.4 GHz microstrip patch antenna
 
Design and Analysis of Microstrip Patch Antenna with Optimization for Wireles...
Design and Analysis of Microstrip Patch Antenna with Optimization for Wireles...Design and Analysis of Microstrip Patch Antenna with Optimization for Wireles...
Design and Analysis of Microstrip Patch Antenna with Optimization for Wireles...
 
High-k für Alle - Beyond DRAM capacitors and HKMG
High-k für Alle - Beyond DRAM capacitors and HKMGHigh-k für Alle - Beyond DRAM capacitors and HKMG
High-k für Alle - Beyond DRAM capacitors and HKMG
 
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch AntennaStudy On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
 
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch AntennaStudy On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
Study On The Improvement Of Bandwidth Of A Rectangular Microstrip Patch Antenna
 
Hl3613171320
Hl3613171320Hl3613171320
Hl3613171320
 
Layer structure for Normally off GaN HEMT
Layer structure for Normally off GaN HEMTLayer structure for Normally off GaN HEMT
Layer structure for Normally off GaN HEMT
 
5G Patent Portfolio Auction
5G Patent Portfolio Auction5G Patent Portfolio Auction
5G Patent Portfolio Auction
 
Microstrip patch antenna for wimax applications
Microstrip patch antenna for wimax applicationsMicrostrip patch antenna for wimax applications
Microstrip patch antenna for wimax applications
 
A Review of Various Shapes Microstrip Patch Antenna for High Frequency Applic...
A Review of Various Shapes Microstrip Patch Antenna for High Frequency Applic...A Review of Various Shapes Microstrip Patch Antenna for High Frequency Applic...
A Review of Various Shapes Microstrip Patch Antenna for High Frequency Applic...
 
Distinguishing Performance of 60-GHz Micro strip Patch Antenna for Different ...
Distinguishing Performance of 60-GHz Micro strip Patch Antenna for Different ...Distinguishing Performance of 60-GHz Micro strip Patch Antenna for Different ...
Distinguishing Performance of 60-GHz Micro strip Patch Antenna for Different ...
 
Design and Analysis of Single Microstrip Patch Antenna with Proximity Coupler...
Design and Analysis of Single Microstrip Patch Antenna with Proximity Coupler...Design and Analysis of Single Microstrip Patch Antenna with Proximity Coupler...
Design and Analysis of Single Microstrip Patch Antenna with Proximity Coupler...
 

patents

  • 1. Patents by Inventor Arsam Antreasyan Ridge waveguide semiconductor laser with thin active region Patent number: 5309465 Abstract: The present invention provides an improved semiconductor ridge waveguide laser structure having a plurality of layers including an N-InP buffer layer and an N-type InP substrate, a thin InGaAsP active layer 1100 Angstroms thickness, a P-InP graded layer, an optional etch stop layer, a P-InP cladding layer and a P+InGaAs. The ridge waveguide laser of the present invention demonstrates a very high reliability and the fabrication process therefor is high yield. The ridge waveguide laser of the present invention demonstrates very good high temperature behavior and the design suppresses higher order modes. Type: Grant Filed: November 5, 1992 Issued: May 3, 1994 Assignee: International Business Machines Corporation Inventors: Arsam Antreasyan, Greg Costrini, Peter D. Hoh Waveguide ridge laser device with improved mounting and ridge protection Patent number: 5305340 Abstract: A protection configuration for a semiconductor ridge waveguide laser structure is disclosed wherein layers of protective metal in the form of walls, is applied on each side of the ridge element of the ridged layer of the laser structure. The laser structure is then bonded to a mounting plate in a junction side down orientation by solder or a junction side up orientation by wire bonding. The metal layer may be composed of gold. Type: Grant Filed: December 16, 1992 Issued: April 19, 1994 Assignee: International Business Machines Corporation Inventors: Arsam Antreasyan, Myra N. Boenke, Greg Costrini, Kurt R. Grebe, Christoph Harder, Peter D. Hoh Group III-V compound field effect transistor with diffusion barrier Patent number: 4873558 Abstract: Group III-V compound MISFETs include a low-doped diffusion barrier layer disposed between a source/drain contact-facilitating layer and the channel layer. Type: Grant Filed: February 23, 1988 Issued: October 10, 1989 Assignee: American Telephone and Telegraph Company, AT&T Bell Laboratories Inventors: Arsam Antreasyan, Paul A. Garbinski, Vincent D. Mattera, Jr., Henryk Temkin