Improving the vertical light extraction efficiency of ga n based thin-film flip-chip led with double embedded photonic crystals
1. IMPROVING THE VERTICAL LIGHT EXTRACTION EFFICIENCY OF GAN-BASED
THIN-FILM FLIP-CHIP LED WITH DOUBLE EMBEDDED PHOTONIC CRYSTALS
ABSTRACT
The vertical light-extraction efficiency (LEE) of the thin-film flip-chip light-emitting
diodes with the embedded photonic crystal (PhC) is investigated using the finite-difference time-
domain method. This paper systematically analyzes the dependence of the vertical LEE on the
vertical structure and the embedded PhC parameters. It is found that the introduction of the p-
side embedded PhC and n-side embedded PhC does not significantly destroy the microcavity
resonant effects. In particular, a two folds enhancement in the vertical LEE is obtained for the
optimized structure by scanning the double embedded PhCs parameters and the physical
mechanisms for the enhancement of the vertical LEE are discussed.