SPICE MODEL of SCS110AG , TC=125degree , LTspice (Professional Model) in SPICE PARK
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SPICE MODEL of SCS110AG , TC=125degree , LTspice (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of SCS110AG , TC=125degree , LTspice (Professional Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: SCS110AG_125C MANUFACTURER: ROHM REMARK: Professional Model REPORT:(LTspice IV) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 2. Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 4. Comparison Graph Circuit Simulation Result Measurement Simulation 10.000 FORWARD CURRENT: IF(A) 1.000 0.100 0.010 0.001 0.0 0.5 1.0 1.5 2.0 2.5 FORWARD VOLTAGE: VF(V) Simulation Result VF(V) IF(A) Error (%) Measurement Simulation 0.001 0.7350 0.7436 1.18 0.01 0.8050 0.8047 -0.04 0.1 0.8850 0.8788 -0.70 0.2 0.9200 0.9112 -0.96 0.5 0.9750 0.9686 -0.66 1 1.0250 1.0276 0.25 2 1.1050 1.1114 0.58 5 1.2850 1.3032 1.42 10 1.5800 1.5798 -0.01 15 1.8500 1.8416 -0.45 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 6. Comparison Graph Circuit Simulation Result 1000 Measurement CAPACITANCE BETWEEN TERMINAL: Ct(pF) Simulation 100 10 1 0.1 1 10 100 REVERSE VOLTAGE:VR(V) Simulation Result C (pF) VR(V) Error (%) Measurement Simulation 0.1 551.372 542.429 -1.62 0.2 535.162 544.659 1.77 0.5 475.224 483.584 1.76 1 411.432 416.135 1.14 2 337.924 339.050 0.33 5 239.767 240.841 0.45 10 178.669 179.458 0.44 20 131.457 131.401 -0.04 50 85.266 85.651 0.45 100 62.800 61.684 -1.78 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 7. Reverse Recovery Characteristic Circuit Simulation Result Time (s) Evaluation Circuit Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 7.500 7.534 0.45 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 8. Reverse Recovery Characteristic Reference Measurement Trj =7.5(ns) Trb=16.0(ns) Conditions: Ifwd=0.2A, Irev=0.2A, Rl=50Ω Example Relation between trj and trb All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 9. Reverse Characteristic Circuit Simulation Result Evaluation Circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2010
- 10. Comparison Graph Circuit Simulation Result 100000 Measurement Simulation 10000 REVERSE CURRENT:IR(nA ) 1000 100 10 1 0 100 200 300 400 500 600 REVERSE VOLTAGE：VR(V) Simulation Result IR(nA) VR(V) Error (%) Measurement Simulation 20 2.4000 2.3593 -1.70 100 2.6500 2.6002 -1.88 200 3.6300 3.4842 -4.02 300 9.4000 9.0421 -3.81 400 49.0000 51.2140 4.52 500 365.0000 380.2370 4.17 600 3100.0000 2956.5000 -4.63 All Rights Reserved Copyright (C) Bee Technologies Inc. 2010