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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT15J102
MANUFACTURER: TOSHIBA




                      Bee Technologies Inc.



        All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
PSpice model
                                    Model description
 parameter
    TAU          Ambipolar Recombination Lifetime
     KP          MOS Transconductance
   AREA          Area of the Device
    AGD          Gate-Drain Overlap Area
    WB           Metallurgical Base Width
     VT          Threshold Voltage
     KF          Triode Region Factor
    CGS          Gate-Source Capacitance per Unit Area
   COXD          Gate-Drain Oxide Capacitance per Unit Area
    VTD          Gate-Drain Overlap Depletion Threshold




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Transfer Characteristics

Circuit Simulation result




Evaluation circuit




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph

Circuit Simulation Result




Simulation Result


  Test condition : Vce = 5 V
                                      Vge(V)
      Ic(A)                                                                Error (%)
                    Measurement                   Simulation
       1                6.8                         6.8090                      0.13235
       2                7.4                         7.3933                     -0.09054
       5                8.5                         8.5843                      0.99176
       10               9.9                          9.925                      0.25253
       15               11                          10.997                     -0.02727




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Fall Time Characteristics

Circuit Simulation result




Evaluation circuit




Test condition Ic=15(A) ,Vcc=300(V)
    tf          Measurement                    Simulation                 Error
                 150        ns                150.347            ns      0.23133
                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Gate Charge Characteristics

Circuit Simulation result




Evaluation circuit




Test condition : Vcc=200(V) ,Ic=20(A) ,Vge=16(V)
                     Measurement                 Simulation               Error(%)
   Qge                  8            nc          8.0899           nc      1.12375
   Qgc                 32            nc          33.371           nc      4.28438
   Qg                  61            nc          61.195           nc      0.31967
                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Saturation Characteristics

Circuit Simulation result




Evaluation circuit




                 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
Comparison Graph

Circuit Simulation Result




Simulation Result

                                    Vce(sat)(V)
     Ic(A)                                                                 Error (%)
                    Measurement                   Simulation
       1                1.2                         1.1448                 -4.60000
       2                1.4                         1.4522                  3.72857
       5                1.9                         1.9306                  1.61053
      10                2.4                         2.3577                 -1.76250
      15                2.7                         2.7147                  0.54444




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2005

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SPICE MODEL of GT15J102 (Standard Without Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: GT15J102 MANUFACTURER: TOSHIBA Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 2. PSpice model Model description parameter TAU Ambipolar Recombination Lifetime KP MOS Transconductance AREA Area of the Device AGD Gate-Drain Overlap Area WB Metallurgical Base Width VT Threshold Voltage KF Triode Region Factor CGS Gate-Source Capacitance per Unit Area COXD Gate-Drain Oxide Capacitance per Unit Area VTD Gate-Drain Overlap Depletion Threshold All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 3. Transfer Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Test condition : Vce = 5 V Vge(V) Ic(A) Error (%) Measurement Simulation 1 6.8 6.8090 0.13235 2 7.4 7.3933 -0.09054 5 8.5 8.5843 0.99176 10 9.9 9.925 0.25253 15 11 10.997 -0.02727 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 5. Fall Time Characteristics Circuit Simulation result Evaluation circuit Test condition Ic=15(A) ,Vcc=300(V) tf Measurement Simulation Error 150 ns 150.347 ns 0.23133 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 6. Gate Charge Characteristics Circuit Simulation result Evaluation circuit Test condition : Vcc=200(V) ,Ic=20(A) ,Vge=16(V) Measurement Simulation Error(%) Qge 8 nc 8.0899 nc 1.12375 Qgc 32 nc 33.371 nc 4.28438 Qg 61 nc 61.195 nc 0.31967 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 7. Saturation Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2005
  • 8. Comparison Graph Circuit Simulation Result Simulation Result Vce(sat)(V) Ic(A) Error (%) Measurement Simulation 1 1.2 1.1448 -4.60000 2 1.4 1.4522 3.72857 5 1.9 1.9306 1.61053 10 2.4 2.3577 -1.76250 15 2.7 2.7147 0.54444 All Rights Reserved Copyright (C) Bee Technologies Inc. 2005