This document summarizes the modeling and simulation of a MOSFET transistor. It includes:
1) Details of the MOSFET component being modeled, including part number, manufacturer, and model parameters.
2) Results of simulations characterizing key electrical properties of the MOSFET, such as transconductance, capacitance, switching time, and forward/reverse current.
3) Comparisons of measurement data and simulation results showing good agreement between the measured and modeled behavior.
13. Reverse Recovery Characteristics
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
4us 8us 12us 16us 20us 24us 28us 32us 36us 40us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.45v V1 U1
V2 = 10.65v D2SK4101LS_P
TD = 0us
TR = 10ns
TF = 10ns
PW = 20us
PER = 50us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj us 1.120 1.131 0.98
trb us 1.520 1.523 0.19
trr us 2.640 2.654 0.53
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14. Reverse Recovery Characteristic Reference
Measurement
Trj= 1.12 (us)
Trb= 1.52 (us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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