Authors: - Thomas Schmitt, Modelon GmbH, Munich - Markus Andres, Modelon GmbH, Munich - Patrick Denz, Vorarlberg University of Applied Sciences This paper introduces behavioral (macro) models of power semiconductors, i.e. diodes, MOSFETs and IGBTs, being part of a library for simulating power electronics utilized, e.g. in electrified powertrains of either hybrid electric vehicles (HEV) or purely battery electric vehicles (BEV). The models consider static, dynamic (switching mode) and thermal effects and in most cases can be fully parameterized solely on the basis of characteristic curves and parameters specified in datasheets. The main purpose of behavioral models is an accurate representation of the semiconductor signals to, e.g. calculate the overall losses. The MOSFET models are verified in simulations with various test circuits and are validated with measurement data provided by a company developing electric drive systems. Furthermore, the arising numerical problems are discussed and possible solutions are provided on how to modify the models in order to use them in e.g. system simulation. Full text at: https://www.modelica.org/events/modelica2014/proceedings/html/submissions/ECP14096343_DenzSchmittAndres.pdf

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Behavioral Modeling of Power Semiconductors
in Modelica
Thomas Schmitt1, Markus Andres1 and Patrick Denz2
1Modelon GmbH
Munich
2Vorarlberg University of Applied Sciences
10th Modelica Conference, Lund/Sweden
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 1 / 29

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Content
1 Electrified Powertrain Concepts (EPoC)
2 Motivation
3 Modeling Approach
4 Behavioral Modeling of Power Semiconductors
Behavioral Modeling of MOSFETs
Behavioral Modeling of IGBTs
5 Simulation Performance
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 2 / 29

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Electrified Powertrain Concepts (EPoC)
The results shown in this presentation were developed within
the EPoC project which is funded by the Eurostars Programme.
The outcome of the project is a commercially distributed
Modelica library: The Electrified Powertrains Library (EPTL)
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 3 / 29

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Our Customers Need...
• ... models of electric powertrains that answer questions
regarding
1 lifetime
2 maximum driving range
3 temperature development
4 overall efficiency
• One major demand of our customers working in the
automotive field is to have models that can be
parameterized easily, i.e. via available parameters.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 4 / 29

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Our Customers Need...
• ... models of electric powertrains that answer questions
regarding
1 lifetime
2 maximum driving range
3 temperature development
4 overall efficiency
• One major demand of our customers working in the
automotive field is to have models that can be
parameterized easily, i.e. via available parameters.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 4 / 29

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Research Question
Is it possible to mimic the behavior of power semiconductors, i.e.
diodes, MOSFETs and IGBTs, solely based on parameters
specified in the manufacturers datasheet such that the losses
are computed correctly?
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 5 / 29

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Modeling Approach
To answer this question correctly, an appropriate modeling
approach was demanded...
• Modelica Standard Library (MSL)
• Package: Modelica.Electrical.Analog.Ideal
• Package: Modelica.Electrical.Analog.Semiconductors
• Semiconductor Physics
• modeling the motion and distribution of charge carriers
• geometrical data and doping profile needed
• Behavioral Approach
• modeling the behavior observed at the semiconductor's pin
• real physical structure is lost but model can be
parameterized using datasheets (in most cases)
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 6 / 29

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Modeling Approach
To answer this question correctly, an appropriate modeling
approach was demanded...
• Modelica Standard Library (MSL)
• Package: Modelica.Electrical.Analog.Ideal
• Package: Modelica.Electrical.Analog.Semiconductors
• Semiconductor Physics
• modeling the motion and distribution of charge carriers
• geometrical data and doping profile needed
• Behavioral Approach
• modeling the behavior observed at the semiconductor's pin
• real physical structure is lost but model can be
parameterized using datasheets (in most cases)
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 6 / 29

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.
Modeling Approach
To answer this question correctly, an appropriate modeling
approach was demanded...
• Modelica Standard Library (MSL)
• Package: Modelica.Electrical.Analog.Ideal
• Package: Modelica.Electrical.Analog.Semiconductors
• Semiconductor Physics
• modeling the motion and distribution of charge carriers
• geometrical data and doping profile needed
• Behavioral Approach
• modeling the behavior observed at the semiconductor's pin
• real physical structure is lost but model can be
parameterized using datasheets (in most cases)
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 6 / 29

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.
Modeling Approach
To answer this question correctly, an appropriate modeling
approach was demanded...
• Modelica Standard Library (MSL)
• Package: Modelica.Electrical.Analog.Ideal
• Package: Modelica.Electrical.Analog.Semiconductors
• Semiconductor Physics
• modeling the motion and distribution of charge carriers
• geometrical data and doping profile needed
• Behavioral Approach
• modeling the behavior observed at the semiconductor's pin
• real physical structure is lost but model can be
parameterized using datasheets (in most cases)
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 6 / 29

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Content
1 Electrified Powertrain Concepts (EPoC)
2 Motivation
3 Modeling Approach
4 Behavioral Modeling of Power Semiconductors
Behavioral Modeling of MOSFETs
Behavioral Modeling of IGBTs
5 Simulation Performance
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 7 / 29

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Fundamentals
A behavioral model of a power semiconductor is usually divided
into a static- and a dynamic model.
Static Model:
• describes the state (behavior) of the model while it is either
conducting or blocking
Dynamic Model:
• adds information about the behavior if the model switches
from static mode to dynamic mode, i.e. describes the
switch-on, switch-off behavior of the semiconductor.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 8 / 29

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Fundamentals
A behavioral model of a power semiconductor is usually divided
into a static- and a dynamic model.
Static Model:
• describes the state (behavior) of the model while it is either
conducting or blocking
Dynamic Model:
• adds information about the behavior if the model switches
from static mode to dynamic mode, i.e. describes the
switch-on, switch-off behavior of the semiconductor.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 8 / 29

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Fundamentals
A behavioral model of a power semiconductor is usually divided
into a static- and a dynamic model.
Static Model:
• describes the state (behavior) of the model while it is either
conducting or blocking
Dynamic Model:
• adds information about the behavior if the model switches
from static mode to dynamic mode, i.e. describes the
switch-on, switch-off behavior of the semiconductor.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 8 / 29

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Behavioral Modeling of MOSFETs
The aim is to develop a model that mimics the real behavior of
the MOSFET, i.e. generating the following simulation result.
+-
+-
Tj
T=50
R=200e-3
R1
dynamicMOSFET
ground
pulseVoltage
constVoltage=20
2.0E-7 4.0E-7 6.0E-7 8.0E-7 1.0E-6 1.2E-6 1.4E-6 1.6E-6 1.8E-6
0
40
80
120
1.005E-6 1.010E-6 1.015E-6 1.020E-6
0
40
80
120
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 9 / 29

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Deriving a Static MOSFET Model
UGS > Uth,V generates a
conducting channel.
Idb=bf(Vgs)
transferCharacteristic
V
voltageSensor
R=RonFW
RonFw
IdFw
freeWheelingDiodeFw
reverseBlocking
Diode
R=RonBW
RonBw
IdBwforwardBlocking
Diode
freeWheelingDiodeBw
D
S
G
bodyDiode
B
S G D
n n
p
UGS>0
1 on-state forward cond.
2 on-state reverse cond.
3 on-state reverse cond. with
body diode forward biased
4 off-state reverse cond.
5 off-state forward blocking
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 10 / 29

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Deriving a Static MOSFET Model
UDS > 0 generates a current
flow ID.
Id1=1f(Vgs)
transferCharacteristic
V
voltageSensor
R=RonFW
RonFw
IdFw
freeWheelingDiodeFw
reverseBlocking
Diode
R=RonBW
RonBw
IdBwforwardBlocking
Diode
freeWheelingDiodeBw
D
S
G
1
bodyDiode
B
S G D
n n
p
UDS>0
1 on-state forward cond.
2 on-state reverse cond.
3 on-state reverse cond. with
body diode forward biased
4 off-state reverse cond.
5 off-state forward blocking
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 11 / 29

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Deriving a Static MOSFET Model
UDS < 0 changes the direction of
ID.
Id2=2f(Vgs)
transferCharacteristic
V
voltageSensor
R=RonFW
RonFw
IdFw
freeWheelingDiodeFw
reverseBlocking
Diode
R=RonBW
RonBw
IdBwforwardBlocking
Diode
freeWheelingDiodeBw
D
S
G
2
bodyDiode
B
S G D
n n
p
UDS<0
1 on-state forward cond.
2 on-state reverse cond.
3 on-state reverse cond. with
body diode forward biased
4 off-state reverse cond.
5 off-state forward blocking
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 12 / 29

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Deriving a Static MOSFET Model
If ID is increased and UDS > Uth,D
body-diode will conduct too...
Id3=3f(Vgs)
transferCharacteristic
V
voltageSensor
R=RonFW
RonFw
IdFw
freeWheelingDiodeFw
reverseBlocking
Diode
R=RonBW
RonBw
IdBwforwardBlocking
Diode
freeWheelingDiodeBw
D
S
G
3
3
bodyDiode
B
S G D
n n
p
UDS<0
1 on-state forward cond.
2 on-state reverse cond.
3 on-state reverse cond. with
body diode forward biased
4 off-state reverse cond.
5 off-state forward blocking
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 13 / 29

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Deriving a Static MOSFET Model
If UGS = 0 and UDS < 0 solely the
body-diode conducts.
Id4=4f(Vgs)
transferCharacteristic
V
voltageSensor
R=RonFW
RonFw
IdFw
freeWheelingDiodeFw
reverseBlocking
Diode
R=RonBW
RonBw
IdBwforwardBlocking
Diode
freeWheelingDiodeBw
D
S
G
4
bodyDiode
B
S G D
n n
p
UDS<0
1 on-state forward cond.
2 on-state reverse cond.
3 on-state reverse cond. with
body diode forward biased
4 off-state reverse cond.
5 off-state forward blocking
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 14 / 29

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Deriving a Static MOSFET Model
If UGS = 0 and UDS > 0 no
current will flow.
Idb=bf(Vgs)
transferCharacteristic
V
voltageSensor
R=RonFW
RonFw
IdFw
freeWheelingDiodeFw
reverseBlocking
Diode
R=RonBW
RonBw
IdBwforwardBlocking
Diode
freeWheelingDiodeBw
D
S
G
bodyDiode
B
S G D
n n
p
UDS>0
1 on-state forward cond.
2 on-state reverse cond.
3 on-state reverse cond. with
body diode forward biased
4 off-state reverse cond.
5 off-state forward blocking
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 15 / 29

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Dynamic Model
• dynamics are mainly an effect of capacitors between the
MOSFET's pins
• in datasheets one can find characteristic curves for the
input capacitance Ciss, the output capacitance Coss and the
reverse transfer capacitance Crss
D
S
G
CDS
CGS
CDS
• Cds = Ciss − Crss
• Cgd = Crss
• Cgs = Coss − Crss
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 16 / 29

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Dynamic Model
• dynamics are mainly an effect of capacitors between the
MOSFET's pins
• in datasheets one can find characteristic curves for the
input capacitance Ciss, the output capacitance Coss and the
reverse transfer capacitance Crss
D
S
G
CDS
CGS
CDS
• Cds = Ciss − Crss
• Cgd = Crss
• Cgs = Coss − Crss
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 16 / 29

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Dynamic Model
• dynamics are mainly an effect of capacitors between the
MOSFET's pins
• in datasheets one can find characteristic curves for the
input capacitance Ciss, the output capacitance Coss and the
reverse transfer capacitance Crss
D
S
G
CDS
CGS
CDS
• Cds = Ciss − Crss
• Cgd = Crss
• Cgs = Coss − Crss
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 16 / 29

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Dynamic Model
Idp=pf…
C=fGVdsP
Ron=fGTP
staticpmodel
dynamicpmodel
Id=fGVgs,TP
R=Rg
R1
V
voltageSensor
Cgd
Cgs
Cds
V
RonFw
capTable
Cgd
Cds
Cgs
ronTable
K
transferChar…
A
currentSensor
product
RonBw
bodyDiode
K
D
S
G
heatPort
IdFw
IdBw
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 17 / 29

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Summary: MOSFET
• The MOSFET model can be fully parameterized via curves
and parameters specified in datasheets.
• transfer characteristic:
Id = f(Vgs, T)
• output characteristic:
Rds,on = f(T) or Vds = f(Id, T)
• diode's forward char.:
Vf = f(If, T)
• transfer cap.: Crss = f(Vds)
• input cap.: Ciss = f(Vds)
• output cap.: Coss = f(Vds)
• internal gate res.: Rg
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 18 / 29

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Summary: MOSFET
• The MOSFET model can be fully parameterized via curves
and parameters specified in datasheets.
• transfer characteristic:
Id = f(Vgs, T)
• output characteristic:
Rds,on = f(T) or Vds = f(Id, T)
• diode's forward char.:
Vf = f(If, T)
• transfer cap.: Crss = f(Vds)
• input cap.: Ciss = f(Vds)
• output cap.: Coss = f(Vds)
• internal gate res.: Rg
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 18 / 29

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Summary: MOSFET
• The MOSFET model can be fully parameterized via curves
and parameters specified in datasheets.
• transfer characteristic:
Id = f(Vgs, T)
• output characteristic:
Rds,on = f(T) or Vds = f(Id, T)
• diode's forward char.:
Vf = f(If, T)
• transfer cap.: Crss = f(Vds)
• input cap.: Ciss = f(Vds)
• output cap.: Coss = f(Vds)
• internal gate res.: Rg
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 18 / 29

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Summary: MOSFET
• The MOSFET model can be fully parameterized via curves
and parameters specified in datasheets.
• transfer characteristic:
Id = f(Vgs, T)
• output characteristic:
Rds,on = f(T) or Vds = f(Id, T)
• diode's forward char.:
Vf = f(If, T)
• transfer cap.: Crss = f(Vds)
• input cap.: Ciss = f(Vds)
• output cap.: Coss = f(Vds)
• internal gate res.: Rg
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 18 / 29

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Summary: MOSFET
• The MOSFET model can be fully parameterized via curves
and parameters specified in datasheets.
• transfer characteristic:
Id = f(Vgs, T)
• output characteristic:
Rds,on = f(T) or Vds = f(Id, T)
• diode's forward char.:
Vf = f(If, T)
• transfer cap.: Crss = f(Vds)
• input cap.: Ciss = f(Vds)
• output cap.: Coss = f(Vds)
• internal gate res.: Rg
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 18 / 29

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Summary: MOSFET
• The MOSFET model can be fully parameterized via curves
and parameters specified in datasheets.
• transfer characteristic:
Id = f(Vgs, T)
• output characteristic:
Rds,on = f(T) or Vds = f(Id, T)
• diode's forward char.:
Vf = f(If, T)
• transfer cap.: Crss = f(Vds)
• input cap.: Ciss = f(Vds)
• output cap.: Coss = f(Vds)
• internal gate res.: Rg
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 18 / 29

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Summary: MOSFET
• The MOSFET model can be fully parameterized via curves
and parameters specified in datasheets.
• transfer characteristic:
Id = f(Vgs, T)
• output characteristic:
Rds,on = f(T) or Vds = f(Id, T)
• diode's forward char.:
Vf = f(If, T)
• transfer cap.: Crss = f(Vds)
• input cap.: Ciss = f(Vds)
• output cap.: Coss = f(Vds)
• internal gate res.: Rg
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 18 / 29

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Summary: MOSFET
• The MOSFET model can be fully parameterized via curves
and parameters specified in datasheets.
• transfer characteristic:
Id = f(Vgs, T)
• output characteristic:
Rds,on = f(T) or Vds = f(Id, T)
• diode's forward char.:
Vf = f(If, T)
• transfer cap.: Crss = f(Vds)
• input cap.: Ciss = f(Vds)
• output cap.: Coss = f(Vds)
• internal gate res.: Rg
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 18 / 29

34. .
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Summary: MOSFET
• The model was validated with measurement data of a
three-phase inverter motor drive system and the maximum
relative error between the measured and simulated total
power losses lies within 2%.
TOP_V_IGBTBOT_V_IGBT
Tj
T=50
constantVoltage1=150
+-
constantVoltage2=150
+-
ground
signalVoltage
+-
signalVoltage1
+-
signalVoltage2
+-
signalVoltage3
+-
signalVoltage4
+-
signalVoltage5
+-
R=100e-2
RU
R=100e-2
RV
R=100e-2
RW
TOP_U_IGBTBOT_U_IGBT
TOP_W_IGBTBOT_W_IGBT
fwd1fwd2
fwd3fwd4
fwd5fwd6
L=100e-5
LU
L=100e-5
LV
L=100e-5
LW
STM_U STM_V STM_W
Rg1
Rg2
Rg3
Rg4
Rg5
Rg6
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 19 / 29

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Content
1 Electrified Powertrain Concepts (EPoC)
2 Motivation
3 Modeling Approach
4 Behavioral Modeling of Power Semiconductors
Behavioral Modeling of MOSFETs
Behavioral Modeling of IGBTs
5 Simulation Performance
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 20 / 29

36. .
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Static Model
V
voltageSensor
transferCharacteristic
Ic
Vce
+-A
freeWheeling
Diode
C
E
G Icp=pf(Vge)
outputCharacteristic
reverseBlocking
Diode
Vcep=pf(Ic)
1 transfer characteristic
provides Vce as a
function of Ic
2 output characteristic
describes the
conducting losses
3 reverse blocking diode
ensures that current
solely flows in forward
direction
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 21 / 29

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Static Model
V
voltageSensor
transferCharacteristic
Ic
Vce
+-A
freeWheeling
Diode
C
E
G Icp=pf(Vge)
outputCharacteristic
reverseBlocking
Diode
Vcep=pf(Ic)
1 transfer characteristic
provides Vce as a
function of Ic
2 output characteristic
describes the
conducting losses
3 reverse blocking diode
ensures that current
solely flows in forward
direction
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 22 / 29

38. .
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Static Model
V
voltageSensor
transferCharacteristic
Ic
Vce
+-A
freeWheeling
Diode
C
E
G Icp=pf(Vge)
outputCharacteristic
reverseBlocking
Diode
Vcep=pf(Ic)
1 transfer characteristic
provides Vce as a
function of Ic
2 output characteristic
describes the
conducting losses
3 reverse blocking diode
ensures that current
solely flows in forward
direction
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 23 / 29

39. .
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Static Model
V
voltageSensor
transferCharacteristic
Ic
Vce
+-A
freeWheeling
Diode
C
E
G Icp=pf(Vge)
outputCharacteristic
reverseBlocking
Diode
Vcep=pf(Ic)
1 transfer characteristic
provides Vce as a
function of Ic
2 output characteristic
describes the
conducting losses
3 reverse blocking diode
ensures that current
solely flows in forward
direction
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 24 / 29

40. .
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Dynamic Model
Ic-=-fG…
Vce-=-…
static-model
dynamic-model
Fieldstop-Effect
IcTransfertransferCh…
freeWheeli…
A
collectorCu…
degC
temperatur…Vce
+-
reverseBlo…
C=Cies--vCres
Cge
R=Rg
R1
Cgc
V
voltageSen…
outputChar…
V
voltageColl…
MillerCapacity
Cq
outputCapacity
C
E
G
heatPort
1 Tail current
cannot be
modeled directly
2 Due to PT
structure (or the
field stop layer)
Cq = f(VCE)
appears. Thus,
switch off
behavior changes.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 25 / 29

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Dynamic Model
Ic-=-fG…
Vce-=-…
static-model
dynamic-model
Fieldstop-Effect
IcTransfertransferCh…
freeWheeli…
A
collectorCu…
degC
temperatur…Vce
+-
reverseBlo…
C=Cies--vCres
Cge
R=Rg
R1
Cgc
V
voltageSen…
outputChar…
V
voltageColl…
MillerCapacity
Cq
outputCapacity
C
E
G
heatPort
1 Tail current
cannot be
modeled directly
2 Due to PT
structure (or the
field stop layer)
Cq = f(VCE)
appears. Thus,
switch off
behavior changes.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 25 / 29

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Dynamic Model
Ic-=-fG…
Vce-=-…
static-model
dynamic-model
Fieldstop-Effect
IcTransfertransferCh…
freeWheeli…
A
collectorCu…
degC
temperatur…Vce
+-
reverseBlo…
C=Cies--vCres
Cge
R=Rg
R1
Cgc
V
voltageSen…
outputChar…
V
voltageColl…
MillerCapacity
Cq
outputCapacity
C
E
G
heatPort
1 Tail current
cannot be
modeled directly
2 Due to PT
structure (or the
field stop layer)
Cq = f(VCE)
appears. Thus,
switch off
behavior changes.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 25 / 29

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Summary: IGBT
• PT-IGBTs and IGBTs with field-stop layer cannot be
implemented directly since neither information about the
tail current nor the additional output capacitor is available in
the datasheet.
• In order to model the behavior correctly one has to measure
the switch-off signals thoroughly and fed the results into a
look-up table.
• If it is not possible - for whatever reason - to measure the
switch-off behavior we can utilize the static models and
whenever a discontinuity appears, i.e. switch-on or
switch-off, add the Eon, Eoff = f(IC, T) losses specified in the
datasheet.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 26 / 29

44. .
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Summary: IGBT
• PT-IGBTs and IGBTs with field-stop layer cannot be
implemented directly since neither information about the
tail current nor the additional output capacitor is available in
the datasheet.
• In order to model the behavior correctly one has to measure
the switch-off signals thoroughly and fed the results into a
look-up table.
• If it is not possible - for whatever reason - to measure the
switch-off behavior we can utilize the static models and
whenever a discontinuity appears, i.e. switch-on or
switch-off, add the Eon, Eoff = f(IC, T) losses specified in the
datasheet.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 26 / 29

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Summary: IGBT
• PT-IGBTs and IGBTs with field-stop layer cannot be
implemented directly since neither information about the
tail current nor the additional output capacitor is available in
the datasheet.
• In order to model the behavior correctly one has to measure
the switch-off signals thoroughly and fed the results into a
look-up table.
• If it is not possible - for whatever reason - to measure the
switch-off behavior we can utilize the static models and
whenever a discontinuity appears, i.e. switch-on or
switch-off, add the Eon, Eoff = f(IC, T) losses specified in the
datasheet.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 26 / 29

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Summary: IGBT
• This can be done using state graphs. Such models are
already integrated in the EPTL developed at Modelon GmbH.
turn-on
gate = true
conduction
delay = ton
turn-off
gate = false
blocking
delay = toff
IGBT: Pon IGBT: Pcond
Diode: Pcond
IGBT: Poff
Diode: Prec
• This in turn increases the simulation performance and
ensures that the losses are modeled correctly.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 27 / 29

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Summary: IGBT
• This can be done using state graphs. Such models are
already integrated in the EPTL developed at Modelon GmbH.
turn-on
gate = true
conduction
delay = ton
turn-off
gate = false
blocking
delay = toff
IGBT: Pon IGBT: Pcond
Diode: Pcond
IGBT: Poff
Diode: Prec
• This in turn increases the simulation performance and
ensures that the losses are modeled correctly.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 27 / 29

48. .
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Simulation Performance
• Since behavioral models of power electronic components
are stiff systems that also generate many events, the
simulation becomes slow or does not converge.
• When integrating the model into a simulation of the entire
vehicle, it must be transformed into an efficiency map model
which stores the power losses of different operating points
in a table.
• The EPTL already provide the means to generate efficiency
maps for the elcectric machines and those for the inverters
are developed too but not fully tested yet.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 28 / 29

49. .
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Simulation Performance
• Since behavioral models of power electronic components
are stiff systems that also generate many events, the
simulation becomes slow or does not converge.
• When integrating the model into a simulation of the entire
vehicle, it must be transformed into an efficiency map model
which stores the power losses of different operating points
in a table.
• The EPTL already provide the means to generate efficiency
maps for the elcectric machines and those for the inverters
are developed too but not fully tested yet.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 28 / 29

50. .
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Simulation Performance
• Since behavioral models of power electronic components
are stiff systems that also generate many events, the
simulation becomes slow or does not converge.
• When integrating the model into a simulation of the entire
vehicle, it must be transformed into an efficiency map model
which stores the power losses of different operating points
in a table.
• The EPTL already provide the means to generate efficiency
maps for the elcectric machines and those for the inverters
are developed too but not fully tested yet.
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 28 / 29

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Thanks for your attention!
Questions?
Schmitt, Denz, Andres Behavioral Modeling Modelica 2014 29 / 29