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Semiconductor Fundamentals
Semiconduction in Germanium and
Silicon (cont’d.)
Figure 19-1. Atomic structure of silicon.
Figure 19-3. Crystalline structure of silicon with covalent bonding.
Semiconduction in Germanium and
Silicon (cont’d.)
Negative temperature coefficient
As temperature increases, resistance decreases
Heat
Potential source of trouble for semiconductors
Electrons break their covalent bonds
Figure 19-4. A hole is created when an electron breaks its covalent bond.
Conduction in Pure Germanium
and Silicon (cont’d.)
Figure 19-5. Current flow in pure semiconductor material.
Conduction in Doped Germanium
and Silicon
Doping
Adding impurities to a semiconductor material
Pentavalent
Made of atoms with five valence electrons
Trivalent
Made of atoms with three valence electrons
Conduction in Doped Germanium
and Silicon (cont’d.)
N-type material
Pentavalent materials
Electrons are the majority carrier
Holes are the minority carrier
Figure 19-6. Silicon semiconductor material doped with an arsenic atom.
Conduction in Doped Germanium
and Silicon (cont’d.)
Figure 19-7. Current flow in N-type material.
Conduction in Doped Germanium
and Silicon (cont’d.)
P-type material
Trivalent materials
Holes are the majority carrier
Electrons are the minority carrier
Figure 19-8. Silicon semiconductor material doped with an indium atom.
Conduction in Doped Germanium
and Silicon (cont’d.)
Figure 19-9. Current flow in P-type material.
Summary
Pure semiconductor materials are germanium,
silicon, and carbon
As the temperature increases in a semiconductor
material, electrons drift from one atom to another
Current flow in semiconductor materials consists of
both electron flow and hole movement
Summary (cont’d.)
Doping is the process of adding impurities to a
semiconductor material
In N-type material, electrons are the majority carrier
and holes are the minority carrier
In P-type material, holes are the majority carrier and
electrons are the minority carrier

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Semiconductor Fundamentals: Atomic Structure, Crystalline Structure, Doping, and Current Flow

  • 2. Semiconduction in Germanium and Silicon (cont’d.) Figure 19-1. Atomic structure of silicon.
  • 3. Figure 19-3. Crystalline structure of silicon with covalent bonding.
  • 4. Semiconduction in Germanium and Silicon (cont’d.) Negative temperature coefficient As temperature increases, resistance decreases Heat Potential source of trouble for semiconductors Electrons break their covalent bonds
  • 5. Figure 19-4. A hole is created when an electron breaks its covalent bond.
  • 6. Conduction in Pure Germanium and Silicon (cont’d.) Figure 19-5. Current flow in pure semiconductor material.
  • 7. Conduction in Doped Germanium and Silicon Doping Adding impurities to a semiconductor material Pentavalent Made of atoms with five valence electrons Trivalent Made of atoms with three valence electrons
  • 8. Conduction in Doped Germanium and Silicon (cont’d.) N-type material Pentavalent materials Electrons are the majority carrier Holes are the minority carrier
  • 9. Figure 19-6. Silicon semiconductor material doped with an arsenic atom.
  • 10. Conduction in Doped Germanium and Silicon (cont’d.) Figure 19-7. Current flow in N-type material.
  • 11. Conduction in Doped Germanium and Silicon (cont’d.) P-type material Trivalent materials Holes are the majority carrier Electrons are the minority carrier
  • 12. Figure 19-8. Silicon semiconductor material doped with an indium atom.
  • 13. Conduction in Doped Germanium and Silicon (cont’d.) Figure 19-9. Current flow in P-type material.
  • 14. Summary Pure semiconductor materials are germanium, silicon, and carbon As the temperature increases in a semiconductor material, electrons drift from one atom to another Current flow in semiconductor materials consists of both electron flow and hole movement
  • 15. Summary (cont’d.) Doping is the process of adding impurities to a semiconductor material In N-type material, electrons are the majority carrier and holes are the minority carrier In P-type material, holes are the majority carrier and electrons are the minority carrier