This document contains summaries of several transistors: - An IGBT transistor with features like low saturation voltage and optimized for high speed switching. It is used in solar inverters and UPS systems. - A series of n-channel JFET transistors that provide ultra-high input impedance and are well-suited for use as high-impedance sensitive front-end amplifiers. - A 2N7002 MOSFET transistor that operates at 60V and 300mA for n-channel applications. - A 56A, 100V, 0.025 ohm n-channel UltraFET Power MOSFET with simulation models and peak current/UIS rating curves. - A 2N

1. TRANSISTORES
JHESSEL GUZMÁN VARGAS
Física Electrónica

2. TRANSISTOR IGBT -
NGTB50N60FLWG
Features
• Low Saturation Voltage using Trench with
Field Stop Technology
• Low Switching Loss Reduces System
Power Dissipation
• Soft Fast Reverse Recovery Diode
• Optimized for High Speed Switching
• 5 s Short−Circuit Capability
• These are Pb−Free Devices
Typical Applications
• Solar Inverters
• Uninterruptible Power Supplies (UPS)

3. CARACTERISTICAS

5. TRANSISTOR N-Channel JFETs -
2N/PN/SST4117A Series
DESCRIPTION
The 2N/PN/SST4117A series of n-channel JFETs provide
ultra-high input impedance. These devices are specified with
a 1-pA limit and typically operate at 0.2 pA. This makes them
perfect choices for use as high-impedance sensitive front-end
amplifiers.

6. ABSOLUTE MAXIMUM RATINGS
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature : (2N Prefix) . . . . . . . . . . . . . . . . . . . −65 to 175C
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150C
Operating Junction Temperature :
(2N Prefix) . . . . . . . . . . . . . . . . . . . −55 to 175C
(PN, SST Prefix) . . . . . . . . . . . . . −55 to 150C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . . . . . 300C
Power Dissipation (case 25C) :
(2N Prefix)a . . . . . . . . . . . . . . . . . . . . . . 300 mW
(PN, SST Prefix)b . . . . . . . . . . . . . . . . 350 mW
Notes
a. Derate 2 mW/C above 25C
b. Derate 2.8 mW/C above 25C

7. ESPECIFICACIONES

8. TRANSISTOR MOSFET - 2N7002
60 V, 300 mA N-channel

10. CARACTERISTICAS

11. TRANSISTOR - 56A, 100V, 0.025 Ohm, N-Channel
UltraFET Power MOSFETs

12. Features
• 56A, 100V
• Simulation Models
- Temperature Compensated PSPICE® and SABER™
Electrical Models
- Spice and Saber Thermal Impedance Models
- www.fairchildsemi.com
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• Related Literature
- TB334, “Guidelines for Soldering Surface Mount
Components to PC Boards”

13. TEST DEL CIRCUITO

14. TRANSISTOR FAIRCHILD
SEMICONDUCTOR - 2N5457
N-Channel General Purpose Amplifier
This device is a low level audio amplifier
and switching transistors,
and can be used for analog switching
applications. Sourced from
Process 55.

15. CARACTERISTICAS