This 3-sentence summary provides the key details about the TIP41C transistor: The TIP41C is an NPN epitaxial planar transistor intended for general purpose applications such as complementary devices, with maximum ratings of 100V for collector-base voltage and collector-emitter voltage, and 6A for collector current. Electrical characteristics include a DC current gain of 30-75 at a collector current of 0.3A and collector-emitter saturation voltage and base-emitter on voltage of under 1.5V at a collector current of 6A.

1. SEMICONDUCTOR TIP41C
TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR
GENERAL PURPOSE APPLICATION.
A
R
FEATURES S
Complementary to TIP42C.
E
F
D P
Q
DIM MILLIMETERS
B
A 10.30 MAX
B 15.30 MAX
C 0.80
MAXIMUM RATING (Ta=25 ) D _
Φ3.60 + 0.20
T E 3.00
CHARACTERISTIC SYMBOL RATING UNIT
H
F 6.70 MAX
G _
13.60 + 0.50
Collector-Base Voltage VCBO 100 V
G
L
H 5.60 MAX
C C
J 1.37 MAX
Collector-Emitter Voltage VCEO 100 V K 0.50
M M L 1.50 MAX
Emitter-Base Voltage VEBO 5 V M 2.54
K N 4.70 MAX
DC IC 6
N
1 2 3 O 2.60
O
Collector Current A P 1.50 MAX
J
Pulse ICP 10 Q 1.50
1. BASE R _
9.50 + 0.20
_
Base Current IB 2 A 2. COLLECTOR (HEAT SINK)
S 8.00 + 0.20
T 2.90 MAX
3. EMITTER
Collector Power Ta=25 2 W
PC
Dissipation Tc=25 65 W
Tj
TO-220AB
Junction Temperature 150
Storage Temperature Range Tstg -55 150
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT
Collector Emitter Sustaining Voltage VCEO(SUS) IC=30mA, IB=0 100 - - V
Collector Cut-off Current ICEO VCE=60V, IB=0 - - 0.7 mA
Collector Cut-off Current ICES VCE=100V, VEB=0 - - 400 A
Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 1 mA
VCE=4V, IC=0.3A 30 - -
DC Current Gain hFE
VCE=4V, IC=3A 15 - 75
Collector-Emitter Saturation Voltage VCE(sat) IC=6A, IB=600mA - - 1.5 V
Base-Emitter On Voltage VBE(on) VCE=4V, IC=6A - - 2.0 V
Transition Frequency fT VCE=10V, IC=500mA 3.0 - - MHz
1999. 11. 16 Revision No : 1 1/2

2. TIP41C
h FE - I C V CE(sat) , VBE(sat) - I C
1k 10k
VCE =4V I C /I B =10
300 3k
SATURATION VOLTAGE
DC CURRENT GAIN h FE
VCE(sat) ,V BE(sat) (mV)
100 1k VBE(sat)
30 300
10 100
3 30 VCE(sat)
1 10
1 3 10 30 100 300 1k 3k 10k 1 3 10 30 100 300 1k 3k 10k
COLLECTOR CURRENT I C (mA) COLLECTOR CURRENT I C (mA)
P C - Ta SAFE OPERATING AREA
COLLECTOR POWER DISSIPATION PC (W)
80 30
COLLECTOR CURRENT I C (A)
70 I C MAX.(PULSE) *
10
60 I C MAX.
0.5
1m
DC
mS
(CONTINUOUS)
5m
S
50 3 OP *
S
ER *
AT *
40 IN
G
30 1
* SINGLE NONREPETITIVE
20 PULSE Tc=25 C
0.3 CURVES MUST BE DERATED
10 LINEARLY WITH INCREASE
IN TEMPERATURE
0 0.1
0 50 100 150 200 1 3 10 30 1 00 300
AMBIENT TEMPERATURE Ta ( C) COLLECTOR-EMITTER VOLTAGE V CE (V)
1999. 11. 16 Revision No : 1 2/2

3. This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.