The document provides specifications for a class D audio amplifier circuit using an IRS2092 integrated circuit. It includes 3 sentences summarizing key points: The document outlines specifications for efficiency, total harmonic distortion (THD), frequency response, output power, voltage gain, self-oscillation frequency, dead time, turn on transient, components stress, power loss in MOSFETs, short circuit response, and simulated performance with different field effect transistors (FETs). Graphs and simulation results are provided to evaluate performance across operating conditions including efficiency around 93% and THD less than 0.015% at 1kHz and 10W into a 4 ohm load. Frequency response is specified to be within ±1dB from 20

1. Design Kit
Class D Audio Amplifier Using IRS2092
1 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

2. Contents
Slide #
1. Specification........................................................................................................................................... 3
• Efficiency........................................................................................................................................... 4-5
• THD................................................................................................................................................... 6-7
• Frequency Response........................................................................................................................ 8-9
• Note: Po[W] vs. Vin[VPEAK] ............................................................................................................... 10
2. Waveforms Evaluations.......................................................................................................................... 11
3. Simulated vs. Measured Waveforms...................................................................................................... 12-14
4. Voltage Gain – GV…............................................................................................................................... 15-16
5. Self Oscillation Frequency...................................................................................................................... 17-18
6. Dead time............................................................................................................................................... 19-21
7. Turn on transient.................................................................................................................................... 22-25
8. Components stress................................................................................................................................. 26-27
9. Power loss in the MOSFETs................................................................................................................... 28
• Standard Model................................................................................................................................. 29-30
• Professional Model............................................................................................................................ 31-33
• Standard vs. Professional Model....................................................................................................... 34-35
10. Short circuit vs. switching output shutdown............................................................................................ 36-38
11. Short Circuit Response........................................................................................................................... 39-41
12. Capacitor Models........................................................................................... ........................................ 42-44
13. Simulated Performance of the circuit with different FETs......... .............................................................. 45-47
14. Simulation Index .................................................................................................................................... 48
2 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

3. 1. Specifications
General Test Conditions Simulation folder
Supply Voltage + 15V
Load Impedance 8-4 Ω
Self-Oscillating
400kHz
Frequency
Gain Setting 24dB
Electrical Data
Output Power 25W (1kHz, 4Ω)
Efficiency 93% (25W, 4Ω) [Efficiency]
Audio Performance
Distortion Less than 0.015%THD (1kHz, 4Ω, 10W) [THD]
Frequency
(20 ~ 20000 Hz,
Response : + 1dB [FrqRsp]
4Ω, 2V Output)
20Hz~20kHz
3 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

4. Specifications : Efficiency Evaluation Circuit
R3 +B
VS 15V
47k +B
R8
2 0
C16
+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
VB R12
C4 GND VB R11 10k C9 R13
C1 R2 20nH
IN C2 + 1nF IN- HO 10k 22u 10 L1
10u C5 IN- HO IC = 12.85 R14 Ls2 7G14N-220-RB
V1 3k
R1 IC = 7 EKMG500ELL100ME11D1nF COMP VS 4.7 2 OUT
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19 LOAD
C8 C7 CSD VCC R15 20nH 10 2.2k
RPER11H103K2K1A01B 10 {RL}
10u 10u VSS LO 0 Ls3 C12
VOFF = 0 0 IC = 7 IC = 10 VSS LO R20 C10 22u MMC250K474
VREF 10
VAMPL = {1.4142*SQRT(Po*RL)/Gv } 3.3k IC = 15 C13
FREQ = {f in} VREF COM 1 MMC400K104
R6 8.2k OCSET DT
OCSET DT
TEST CONDITION: 0 0 0
R7 FET2
PARAMETERS: IRS2092
1.2k R21 IRFIZ24N
Po = 25W 8.2k 2 C17
RPER11H104K2K1A01B
Gv = 15.85
RL = 4 20nH
+
Ls4 0 0
f in = 1kHz R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V
0
Condition : Analysis .Options
Po = 25[W], 4Ω Load Time Domain (Transient) RELTOL: 0.01
Run to time: 3ms VNTOL: 1.0u
Start saving data after: 1ms ABSTOL: 1.0n
Maximum step size: 100n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
ITL2: 200
ITL4: 10
4 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

5. Specifications : Efficiency Simulation Result
%Efficiency
PSUPPLY [W]
PO [W]
5 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

6. Specifications : THD Evaluation Circuit
R3 +B
VS 15V
47k +B
R8
2 0
C16
+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
75 U5 D2 IRFIZ24N
R4 VR1 VAA CSH MUR120RLG MUR120RLG 2
220 VAA CSH D1
VB R12
C4 GND VB R11 10k C9 R13
C1 10u R2 20nH
IN C2 1nF IN- HO 10k 22u 10 L1
10u C5 IN- HO IC = 12.85 R14 Ls2 7G14N-220-RB
V1 3k
R1 IC = 7 1nF COMP VS 4.7 2 OUT
100k C6 COMP VS R16 1
1n CSD VCC R18 R19 LOAD
C3 C8 C7 CSD VCC R15 20nH 10 2.2k
10 {RL}
10u 10u 10u VSS LO 0 Ls3 C12
0 IC = 14 IC = 7 IC = 10 VSS LO R20 C10 22u MMC250K474
VREF 10
VOFF = 0 3.3k IC = 15 C13
VAMPL = {1.4142*SQRT(Po*RL)/Gv } VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
TEST CONDITION: R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
PARAMETERS: 8.2k 2 C17
Po = 10 RPER11H104K2K1A01B
Gv = 15.85 20nH
+
RL = 4 Ls4 0 0
R5
f in = 1k
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V
0
Analysis .Options
Condition : Time Domain (Transient) RELTOL: 0.01
fin = 1kHz, Po = 10[W], Run to time: 3ms VNTOL: 1.0u
4Ω Load Start saving data after: 0s ABSTOL: 1.0n
Maximum step size: 100n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
Output File Options... ITL2: 200
 Perform Fourier Analysis ITL4: 10
Center Frequency: 1khz
Output Variables: V(OUT)
6 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

7. Specifications : THD Simulation Result
HARMONIC FREQUENCY FOURIER NORMALIZED PHASE NORMALIZED
NO (HZ) COMPONENT COMPONENT (DEG) PHASE
VOUT 0.0144%THD
1 1.00E+03 8.81E+00 1.00E+00 1.79E+02 0.00E+00
2 2.00E+03 4.62E-04 5.25E-05 4.18E+01 -3.15E+02
3 3.00E+03 2.78E-04 3.16E-05 8.49E+01 -4.51E+02
4 4.00E+03 3.23E-04 3.67E-05 6.91E+01 -6.45E+02
5 5.00E+03 3.73E-04 4.23E-05 8.66E+01 -8.06E+02
6 6.00E+03 6.69E-04 7.60E-05 6.10E+01 -1.01E+03
7 7.00E+03 2.85E-04 3.24E-05 8.09E+01 -1.17E+03
8 8.00E+03 4.32E-04 4.91E-05 7.17E+01 -1.36E+03
9 9.00E+03 5.95E-04 6.76E-05 2.70E+01 -1.58E+03
TOTAL HARMONIC DISTORTION = 1.438206E-02 PERCENT
7 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

8. Specifications : Frequency Response Evaluation Circuit
R3 +B
VS 15V
47k +B
R8
2 0
C16
+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 U5 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 8.499 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19 LOAD
C7 CSD VCC R15 20nH 10 2.2k
RPER11H103K2K1A01B 10 {RL}
10u VSS LO 0 Ls3 C12
0 C8 IC = 9.8 VSS LO R20 C10 22u MMC250K474
VREF 10
VOFF = 0 10u 3.3k IC = 15.11 C13
VAMPL = { 1.4142*VOUT/Gv } IC = 7 VREF COM 1 MMC400K104
FREQ = {f in} R6 8.2k OCSET DT
OCSET DT
TEST CONDITION: R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
PARAMETERS: 8.2k 2 RPER11H104K2K1A01B
C17
f in = 20k
RL = 8 20nH
+
Gv = 15.85 Ls4 0 0
R5
VOUT = 2
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V
0
Analysis .Options
Condition : Time Domain (Transient) RELTOL: 0.01
20 ~ 20000 Hz, 4Ω Run to time: 2ms VNTOL: 1.0u
Load, 2V Output Start saving data after: 0ms ABSTOL: 1.0n
Maximum step size: 100n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
Parametric Sweep ITL2: 200
 Global parameter ITL4: 10
Parameter name: RL
 Value list: 4, 8
8 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

9. Specifications : Frequency Response Simulation Result
VOUT+1dB (8Ω Load @ 20kHz)
VOUT - 0.4dB (4Ω Load @ 20kHz)
9 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

10. Note : PO [W] vs. VIN [VPEAK]
1.4142 × √������������������������ × ������������������������������������������������������������
������������������������������������ [������������������������������������������������������������] =
������������������������
 Po [W] = power output
 Rload [Ω] = Load resistance
 GV = Amplifier voltage gain
10 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

11. 2. Waveforms Evaluation
Class D amplifier circuit are simulated and compared with measured waveforms from oscilloscope
(Tektronix: TDS3054B)
R3 +B
VS 15V
47k +B
R8
2 0
C16
+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
V COMP VS V 1
100k C6 R16
V1 C3 AMZ0050J102 CSD VCC R18 R19V
V CSD VCC V
RPER11H103K2K1A01B C7 R15 20nH 10 2.2k -
VSS LO 10
10u 0 Ls3 C12 SPEAKER
VOFF = 0 0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VAMPL = { 1.4142*VOUT/Gv } 10u 3.3k
V
IC = 15 C13
FREQ = {f in} IC = 7 VREF COM 1 MMC400K104
R6 8.2k OCSET DT
OCSET DT
PARAMETERS: R7 FET2 0 0 0
IRS2092
VOUT = 2 1.2k R21 IRFIZ24N
Gv = 15.85 8.2k 2 C17
f in = 1k RPER11H104K2K1A01B
20nH
+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V
0
11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

12. 3. Simulated vs. Measured Waveform (1/3)
Simulated Measured
OUT
VS
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13. 3. Simulated vs. Measured Waveform (2/3)
Simulated Measured
HO
LO
13 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

14. 3. Simulated vs. Measured Waveform (3/3)
Simulated Measured
COMP
14 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

15. 4. Voltage gain of the amplifier – GV
������������������������������������
R3 +B
������������������������ =
VS 15V
������������������������������������
47k +B
R8
2 0
C16
+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
RFB =47kΩ
20nH 1
Ls1 0 0
RIN =2.4 ,3kΩ R9
4.7k
1
C11
C14
MMH250K684
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
R2 20nH
IN C2 + 1nF IN- HO 10k 22u 10 L1
10u C5 IN- HO IC = 12.85 R14 Ls2 7G14N-220-RB
V1 {RIN}
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0.14142 IC = 7 VREF COM 1 MMC400K104
FREQ = {Freq} R6 8.2k OCSET DT
OCSET DT
PARAMETERS: R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
Freq = 1k 8.2k 2 RPER11H104K2K1A01B
RIN = 3k C17
20nH
+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V
0
Analysis .Options
Time Domain (Transient) RELTOL: 0.01
Run to time: 1ms VNTOL: 1.0u
Start saving data after: 100n ABSTOL: 1.0n
Maximum step size: 100n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
Sweep variable ITL2: 200
 Global parameter: RIN ITL4: 10
 Value list: 2.4k, 3k
15 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

16. 4. Voltage gain of the amplifier – GV
GV = 26dB
GV = 24dB
16 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

17. 5. Self-Oscillating Frequency
Self oscillating frequency is design by setting the following items
• Integration capacitors.
Integration resistor.
R3 +B
VS 15V
• 47k
R8 +B
2 0
C16
+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH
Integration resistor: Integration capacitors: Ls1
1
0 0
C14
R4+VR1 C4=C5 R9
4.7k
1
C11
MMH250K684
RPER11H104K2K1A01B
FET1
R4 VR1 IC1 D2 IRFIZ24N
220 75 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0 IC = 7 VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 FET2 0 0 0
IRS2092
1.2k R21 IRFIZ24N
8.2k 2 RPER11H104K2K1A01B
C17
20nH
+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820
Analysis .Options -15V
Time Domain (Transient) RELTOL: 0.001 0
Run to time: 1ms VNTOL: 1.0u
Start saving data after: 0.5m ABSTOL: 1.0n
Maximum step size: 40n CHGTOL: 0.01p
 Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
ITL1: 500
ITL2: 200
ITL4: 10
17 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

18. 5. Self-Oscillating Frequency
Simulated Measured
VS VS
OUT OUT
Self-oscillation frequency Self-oscillation frequency
= 400kHz (Simulated) = 400kHz (Measured)
18 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

19. 6. Dead-time
Dead-time Mode R20 R21 Analysis .Options
Time Domain (Transient) RELTOL: 0.001
DT1 (25ns) 3.3k 8.2k Run to time: 1ms VNTOL: 1.0u
DT2 (40ns) 5.6k 4.7k Start saving data after: 0.5m ABSTOL: 1.0n
Maximum step size: 40n CHGTOL: 0.01p
DT3 (65ns) 8.2k 3.3k  Skip the initial transient bias point calculation (SKIPBP) GMIN: 1.0E-12
DT4 (105ns) - < 10k ITL1: 500
ITL2: 200
R3 +B
ITL4: 10
VS 15V
47k +B
R8
2 0 C16
EKMG500ELL222MLP1S
+
820
C15
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C14
R9 1 MMH250K684
4.7k C11
RPER11H104K2K1A01B
FET1
R4 75 IC1 D2 D1 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 10u 3k C5 IC = 12.85 R14 7G14N-220-RB
R1 IC = 7 1nF COMP VS 4.7 2 OUT +
100k C6 COMP VS R16 1
C3 AMZ0050J102 CSD VCC R18 R19
C7 CSD VCC R15 20nH 10 2.2k -
RPER11H103K2K1A01B 10
10u VSS LO 0 Ls3 C12 SPEAKER
0 C8 IC = 10 VSS LO R20 C10 22u MMC250K474 F120A
VREF 10
VOFF = 0 10u 3.3k IC = 15 C13
VAMPL = 0 IC = 7 VREF COM 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 R21 FET2 0 0 0
IRS2092
1.2k 8.2k IRFIZ24N
2 C17
RPER11H104K2K1A01B
20nH
+
R5
V(DT) Voltage Divider Ls4 0 0
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V
0
19 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

20. Dead-time DT1(25ns)
Spike voltage
DT1(25ns)
DT1(25ns)
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21. Dead-time DT3(65ns)
Spike voltages
(Decrease for longer dead time)
DT3(65ns)
DT3(65ns)
21 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

22. 7. Turn-on transient
 Start-up sequencing is achieved through the charging of the CSD voltage (C7). Simulation will
show how capacitors are charged to complete the sequence for each capacitance value.
R3 +B
VS 15V
47k +B
R8
2 0
C16
+
820
C15 EKMG500ELL222MLP1S
R17 RPER11H104K2K1A01B
20nH 1
Ls1 0 0
C7: 10u, 5u, 1
C14
R9 MMH250K684
and 3.3u F 4.7k C11
RPER11H104K2K1A01B
R10 FET1
R4 75 IC1 0.01m D2 IRFIZ24N
220 VR1 VAA CSH MUR120RLG MUR120RLG 2
VAA CSH D1
C1 VB R12
EKMG500ELL100ME11D C4 GND VB R11 10k C9 R13
C2 + R2 1nF IN- HO 10k 22u 10 20nH L1
IN IN- HO Ls2
V1 22u 3k C5 IC = 0 R14 7G14N-220-RB
R1 C3 IC = 0 1nF COMP VS 4.7 2 OUT +
100k RPER11H103K2K1A01B C6 COMP VS R16 1
AMZ0050J102 CSD VCC R18 R19
C8 C7 CSD VCC R15 20nH 10 2.2k -
VSS LO 8.2k 10
22u 10u 0 Ls3 C12 SPEAKER
0 IC = 0 IC = 0 VSS LO R21 C10 MMC250K474 F120A
VREF 10
VOFF = 0 22u C13
VAMPL = 0 VREF COM IC = 0 1 MMC400K104
FREQ = 1k R6 8.2k OCSET DT
OCSET DT
R7 3.3k FET2 0 0 0
IRS2092 R20
1.2k IRFIZ24N
2 C17
RPER11H104K2K1A01B
20nH
+
Ls4 0 0
R5
2 1 -B C18
1 Ls5 EKMG500ELL222MLP1S
20nH -B
820 -15V
.Options
0
RELTOL: 0.01
VNTOL: 1.0u
Analysis ABSTOL: 1n
Time Domain (Transient) CHGTOL: 0.01p
Run to time: 975ms GMIN: 1.0E-12
Start saving data after: 100n ITL1: 500
Maximum step size: 100u ITL2: 200
 Skip the initial transient bias point calculation (SKIPBP) ITL4: 10
22 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

23. Turn-on transient: C7 = 10uF
V(VCC,COM)
V(VB,VS)
V(HO)
V(LO)
V(VAA)
Vth2___
V(CSD) Vth1___
V(VSS)
Class D Startup
@ 0.976second.
23 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

24. Turn-on transient: C7 = 5uF
V(VCC,COM)
V(VB,VS)
V(HO)
V(LO)
V(VAA)
Vth2
Vth1
V(CSD)
V(VSS)
Class D Startup
@ 0.488second.
24 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009

25. Turn-on transient: C7 = 3.3uF
V(VCC,COM)
V(VB,VS)
V(HO)
V(LO)
V(VAA)
Vth2
Vth1
V(CSD)
V(VSS)
Class D Startup
@ 0.320second.
25 All Rights Reserved Copyright (c) Bee Technologies Inc. 2009