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Study on structural and
spectroscopic properties of
nanostructured GaN:ZnO
Solid solution
NANOTECHNOLOGY
* Study and application of extremely small things at
Nano scale (about 1-100 nm).
* Nanotechnology helps us to see and control atoms and
molecules individually.
* First discussed by Richard Feynman in his talk ‘There’s
Plenty of Room at the Bottom ‘in the year 1959 and the
term “Nano-technology” was first used by Norio
Taniguchi in the year 1974.
NANOMATERIAL
* Materials with external/internal/surface structure in nanoscale.
* Have enhanced properties such as higher strength, light weight, increased
control of light spectrum and greater chemical reactivity.
* Nanomaterial is synthesized using ‘Bottom-up approach’ and ‘Top-down
approach’.
Fig.1 (A) Piezoelectric actuators (B) Water splitting
PHOTOCATALYSIS
* Photocatalyst is a material that absorbs light for chemical
transformation of reactants and remains unaltered at end of
the reaction.
* Combination of two Greek words “photo”-light and
“catalysis” -acceleration of chemical reaction by a catalyst.
* Photocatalysis was discovered by Honda and Fujishima in
1972.
X-RAY DIFFRACTION (XRD)
SPECTROSCOPY
* Techniques used for :
-Characterization of crystalline materials.
-Determination of unit cell dimensions.
-Measurement of sample purity.
* The interplanar spacing can be calculated by employing
Bragg’s equation:
d=
nλ
Sinθ
* Crystallite size can be calculated using Scherrer equation:
D =
Kλ
βCosθ
(K-shape factor(0.9 ))
* Micro-strain can be calculated using the formula:
ε =
βcosθ
4 sinθ
=
β
4tanθ
Fig.2 Schematic Diagram of X-ray
Diffractometer
Fig.3 X-ray Diffractometer
* Lattice parameters are calculated using equation:
1
d²
=
4
3
(h2+hk+k2)
a²
+
l²
c²
* Bond length can be calculated using formula:
l =
𝑎2
3
+
1
2
− 𝑢
2
∗ 𝑐² (positional parameter, u =
𝑎²
3𝑐²
+ 0.25)
* Volume of the unit cell can be calculated using relation:
V = 0.866*a2*c
Fig.4 X-ray powder diffractogram
RESULTS AND DISCUSSION
XRD ANALYSIS:
 Ga conc. increases,(101) peak
shifts to higher 2θ value.
 Variation in lattice parameters,
strain and particle size of the
samples with increasing Ga conc.
has been calculated and
tabulated.
 As Ga conc. increases, strain
increases and particle size
decreases.
 Samples A,B & C mentioned are
Ga & N co-doped ZnO with Zn/Ga
molar ratio 10%(C),15%(B) &
20%(A) respectively.
Fig.5 XRD graph of Ga doped ZnO
Ga
Conc.
%mol
D
(nm)
d
(Å)
a
(Å)
b
(Å)
c
(Å)
Strai
n
ε
×10-3
Bond
Length
(Å)
Vol.
(Å)3
10% 34.49 2.15 3.25 3.25 5.20 2.88 1.588 47.56
15% 31.32 2.15 3.25 3.25 5.20 3.18 1.589 47.69
20% 29.07 2.15 3.25 3.25 5.20 3.43 1.588 47.58
Table 1
Fig.6 Williamson-Hall plot
DIFFUSE REFLECTANCE SPECTROSCOPY (DRS)
* Measures the characteristic reflectance spectrum produced
when light is passed through a medium.
* This spectrum contains the optical properties and structure of
the sample.
* Theory used to describe and analyze diffuse reflectance spectra
is the Kubelka-Munk theory.
* The Kubelka-Munk function F(R∞);
F(R∞) =
(1−R∞)²
2R∞
=
K
S
Fig.7 UV-Visible-NIR Spectrophotometer.
RESULTS AND DISCUSSION
DRS ANALYSIS
Samples have been calculated from their DRS plots by
employing Kubelka-Munk function and the approximate
band gap have been evaluated as 2.643eV, 2.704eV and
2.807eV for A,B and C respectively.
Ga conc. increases,absorption of the samples shifts towards
higher wavelength.
Fig.8 DRS graph of Ga doped ZnO Fig.9 Kubelka- Munk plot
Ga Conc.
(%mol)
Band gap
(Eg)
(eV)
10% 2.80
15% 2.70
20% 2.64
Table 2
Fig.10 Energy Band diagram
Reduction in band gap is due to the repulsion between N2p and Zn3d
energy levels in the valence band.
CONCLUSION
Crystalline size, Strain , Bond length , Volume, Lattice
Parameters of the samples with increasing Ga content has
been calculated using XRD Data. As the Conc. of Ga
increases, the Crystalline size decreases and Strain
increases. A shift in the peaks of graph, towards the higher
degree side with increasing Ga content is noticed.
The approximate band gap of the samples have been
evaluated from the DRS plots by employing Kubelka-Munk
function. As the Ga concentration is increased, the
absorption onset of the samples shifts towards the higher
wavelength side, and the Bandgap decreases.
THANK YOU…

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Structural & spectroscopic properties of GaN: ZnO.pptx

  • 1. Study on structural and spectroscopic properties of nanostructured GaN:ZnO Solid solution
  • 2. NANOTECHNOLOGY * Study and application of extremely small things at Nano scale (about 1-100 nm). * Nanotechnology helps us to see and control atoms and molecules individually. * First discussed by Richard Feynman in his talk ‘There’s Plenty of Room at the Bottom ‘in the year 1959 and the term “Nano-technology” was first used by Norio Taniguchi in the year 1974.
  • 3. NANOMATERIAL * Materials with external/internal/surface structure in nanoscale. * Have enhanced properties such as higher strength, light weight, increased control of light spectrum and greater chemical reactivity. * Nanomaterial is synthesized using ‘Bottom-up approach’ and ‘Top-down approach’. Fig.1 (A) Piezoelectric actuators (B) Water splitting
  • 4. PHOTOCATALYSIS * Photocatalyst is a material that absorbs light for chemical transformation of reactants and remains unaltered at end of the reaction. * Combination of two Greek words “photo”-light and “catalysis” -acceleration of chemical reaction by a catalyst. * Photocatalysis was discovered by Honda and Fujishima in 1972.
  • 5. X-RAY DIFFRACTION (XRD) SPECTROSCOPY * Techniques used for : -Characterization of crystalline materials. -Determination of unit cell dimensions. -Measurement of sample purity. * The interplanar spacing can be calculated by employing Bragg’s equation: d= nλ Sinθ * Crystallite size can be calculated using Scherrer equation: D = Kλ βCosθ (K-shape factor(0.9 )) * Micro-strain can be calculated using the formula: ε = βcosθ 4 sinθ = β 4tanθ Fig.2 Schematic Diagram of X-ray Diffractometer Fig.3 X-ray Diffractometer
  • 6. * Lattice parameters are calculated using equation: 1 d² = 4 3 (h2+hk+k2) a² + l² c² * Bond length can be calculated using formula: l = 𝑎2 3 + 1 2 − 𝑢 2 ∗ 𝑐² (positional parameter, u = 𝑎² 3𝑐² + 0.25) * Volume of the unit cell can be calculated using relation: V = 0.866*a2*c Fig.4 X-ray powder diffractogram
  • 7. RESULTS AND DISCUSSION XRD ANALYSIS:  Ga conc. increases,(101) peak shifts to higher 2θ value.  Variation in lattice parameters, strain and particle size of the samples with increasing Ga conc. has been calculated and tabulated.  As Ga conc. increases, strain increases and particle size decreases.  Samples A,B & C mentioned are Ga & N co-doped ZnO with Zn/Ga molar ratio 10%(C),15%(B) & 20%(A) respectively. Fig.5 XRD graph of Ga doped ZnO Ga Conc. %mol D (nm) d (Å) a (Å) b (Å) c (Å) Strai n ε ×10-3 Bond Length (Å) Vol. (Å)3 10% 34.49 2.15 3.25 3.25 5.20 2.88 1.588 47.56 15% 31.32 2.15 3.25 3.25 5.20 3.18 1.589 47.69 20% 29.07 2.15 3.25 3.25 5.20 3.43 1.588 47.58 Table 1
  • 9. DIFFUSE REFLECTANCE SPECTROSCOPY (DRS) * Measures the characteristic reflectance spectrum produced when light is passed through a medium. * This spectrum contains the optical properties and structure of the sample. * Theory used to describe and analyze diffuse reflectance spectra is the Kubelka-Munk theory. * The Kubelka-Munk function F(R∞); F(R∞) = (1−R∞)² 2R∞ = K S Fig.7 UV-Visible-NIR Spectrophotometer.
  • 10. RESULTS AND DISCUSSION DRS ANALYSIS Samples have been calculated from their DRS plots by employing Kubelka-Munk function and the approximate band gap have been evaluated as 2.643eV, 2.704eV and 2.807eV for A,B and C respectively. Ga conc. increases,absorption of the samples shifts towards higher wavelength.
  • 11. Fig.8 DRS graph of Ga doped ZnO Fig.9 Kubelka- Munk plot Ga Conc. (%mol) Band gap (Eg) (eV) 10% 2.80 15% 2.70 20% 2.64 Table 2
  • 12. Fig.10 Energy Band diagram Reduction in band gap is due to the repulsion between N2p and Zn3d energy levels in the valence band.
  • 13. CONCLUSION Crystalline size, Strain , Bond length , Volume, Lattice Parameters of the samples with increasing Ga content has been calculated using XRD Data. As the Conc. of Ga increases, the Crystalline size decreases and Strain increases. A shift in the peaks of graph, towards the higher degree side with increasing Ga content is noticed. The approximate band gap of the samples have been evaluated from the DRS plots by employing Kubelka-Munk function. As the Ga concentration is increased, the absorption onset of the samples shifts towards the higher wavelength side, and the Bandgap decreases.