Moved to https://speakerdeck.com/ebiken/zebra-srv6-cli-on-linux-dataplane-enog-number-49
Introduction to SRv6, Linux SRv6 implementation and how to add SRv6 CLI to Zebra 2.0 Open Source Network Operation Stack.
Presented at ENOG (Echigo NOG) #49.
This document provides instructions for configuring a MikroTik router to share a single internet connection among multiple local computers using network address translation (NAT). It describes how to configure the WAN and LAN interfaces, set up DHCP and DNS servers, enable NAT and firewall rules to masquerade the LAN IP addresses, and limit bandwidth to 10kbps per device on the LAN. The configuration shares an internet connection from a WAN IP to a LAN with IP range 192.168.0.0/24 while restricting bandwidth using queue types and simple queues.
Moved to https://speakerdeck.com/ebiken/zebra-srv6-cli-on-linux-dataplane-enog-number-49
Introduction to SRv6, Linux SRv6 implementation and how to add SRv6 CLI to Zebra 2.0 Open Source Network Operation Stack.
Presented at ENOG (Echigo NOG) #49.
This document provides instructions for configuring a MikroTik router to share a single internet connection among multiple local computers using network address translation (NAT). It describes how to configure the WAN and LAN interfaces, set up DHCP and DNS servers, enable NAT and firewall rules to masquerade the LAN IP addresses, and limit bandwidth to 10kbps per device on the LAN. The configuration shares an internet connection from a WAN IP to a LAN with IP range 192.168.0.0/24 while restricting bandwidth using queue types and simple queues.
7. 4.1.3 電流増幅率 (2)
(c)ベース領域内の電子濃度
x
n p
n p0
W0
n p
(x)
ベース領域の電子濃度が直線的に表現されるならば,ベース面積をA,ベ
ース幅をwとして,式(3-13)は次のように書直すことができる.
IE IEn IEp Aq
Dnnn0
w
Dp
pp0
Lp
exp
qVd
T
exp
qVEB
T
1
(4.5)
IEnはIEの電子電流成分,IEpはIEの正孔電流成分,VEBはE-B間の順方向電圧
エミッタ効率γは全エミッタ電流のうち,電子電流成分の比で表され,
IEn
IE
IEn
IEn IEp
Dnnn0
w
Dnnn0
w
Dp pp 0
Lp
1
1
Dp pp0
Dnnn0
w
Lp
1
1
B
E
w
Lp
(4.6)
σBとσEは,ベースとエミッタ領域の導電率である.
γを大きくするには,エミッタ領域の不純物濃度を
高くしてσB<<σEとすると同時に,エミッタ領域の拡
散距離と比べてベース幅Wを小さくする必要がある.
8. 4.1.3 電流増幅率 (3)
(c)ベース領域内
の電子濃度
x
n p
n p0
W0
n p
(x)
ベース輸送効率を近似的に求める.
ベース領域内の電子濃度は図より,
(4.7)
(4.8)
nP x
nP 0
w
x nP 0
電子による拡散電流IBeは,
IBe AqDn
dnP
x
dx x 0
AqDn
nP 0
w
再結合による正孔電流は,再結合に
よる正孔の消滅分を積分して,
IBp Aq
np
x
n
0
W
dx
Awqnp0
2n
(4.9)
ベース輸送効率は,ベースに注入さ
れた電子電流とコレクタに到達した電
子電流の比であるから,
2
2
0
0
2
1
1
2
1
2
11
nnn
p
n
n
p
Bn
Bp
Bn
BpBn
T
L
w
D
w
w
n
AqD
Awqn
I
I
I
II
Lnに比べてベース幅Wを小さくすれ
ばベース輸送効率は大きくなる
Ln Dn n
(4.10)
ここで