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INDIAN INSTITUTE OF TECHNOLOGY ROORKEE
NAME OF DEPT./CENTRE: Electronics and Computer Engineering
1. Subject Code: EC - 342 Course Title: VLSI Technology
2. Contact Hours: L: 3 T: 0 P: 0
3. Examination Duration (Hrs.): Theory Practical
4. Relative Weight: CWS 1 PRS MTE ETE PRE
5. Credits: 6. Semester
Autumn Spring Both
7. Pre-requisite: EC-242 or equivalent
8. Subject Area: DEC
9. Objective: To provide knowledge of various processes and techniques for semiconductor
fabrication.
10. Details of the Course:
Sl.
No.
Contents Contact
Hours
1. Crystal Growth: Czochralski and Bridgman growth, wafer preparation and
specifications.
4
2. Epitaxial Growth: Thermodynamics of vapour phase growth, selective
growth, MOCVD, molecular beam epitaxy technology, gas source MBE and
chemical beam epitaxy.
4
3. Oxidation: Deal-Grove model, linear and parabolic rate coefficients, oxide
characterization, types of oxidation and their kinematics, oxidation induced
stacking faults, oxidation systems.
4
4. Etching: Wet etching, basic regimes of plasma etching, reactive ion etching
and its damages, lift-off, and sputter etching.
4
5. Lithography: Optical, electron, X-ray and ion-beam, contact/proximity and
projection printers, advanced mask concepts, alignment.
5
6. Diffusion and Ion-Implantation: Fick’s diffusion law, atomistic model,
diffusion coefficient of common dopants and diffusion systems.
Scattering phenomenon, projected range, channeling and lateral projected
range, implantation damage, problems and concerns in ion-implantation
systems.
6
7. Metallization: Applications and choices, physical vapor deposition,
patterning, problem areas, multilevel metallization.
4
8. VLSI Process Integration: NMOS and CMOS IC technology, MOS 3
0 3 0 0
15 00 35 0050
0 3 √√√√
memory IC technology, bipolar IC fabrication.
9. Assembly Technique and Packaging: Package types, packaging design
consideration, VLSI assembly technologies.
4
10. Yield and Reliability: Yield loss in VLSI, yield loss modeling, reliability
requirements, accelerated testing, BIST.
4
Total 42
11. Suggested Books:
Sl.
No. Name of Books / Authors
Year of
Publication
1. Sze, S.M., “VLSI Technology”, 4th
Ed., Tata McGraw-Hill. 1999
2. Tyagi, M.S., “Introduction to Semiconductor Materials and Devices”, John
Wiley & Sons.
1991
3. Chang, C.Y. and Sze, S.M., “ULSI Technology”, McGraw-Hill. 1996
4. Campbell, S.A., “The Science and Engineering of Microelectronic
Fabrication”, 4th
Ed., Oxford University Press.
1996
5. Plummer, J.D., Deal, M.D. and Griffin, P.B., “Silicon VLSI Technology:
Fundamentals, Practice and Modeling”, 3rd
Ed., Prentice-Hall.
2000
6. Chen W.K. (ed.), “VLSI Technology”, CRC Press. 2003

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Lecture plan ict

  • 1. INDIAN INSTITUTE OF TECHNOLOGY ROORKEE NAME OF DEPT./CENTRE: Electronics and Computer Engineering 1. Subject Code: EC - 342 Course Title: VLSI Technology 2. Contact Hours: L: 3 T: 0 P: 0 3. Examination Duration (Hrs.): Theory Practical 4. Relative Weight: CWS 1 PRS MTE ETE PRE 5. Credits: 6. Semester Autumn Spring Both 7. Pre-requisite: EC-242 or equivalent 8. Subject Area: DEC 9. Objective: To provide knowledge of various processes and techniques for semiconductor fabrication. 10. Details of the Course: Sl. No. Contents Contact Hours 1. Crystal Growth: Czochralski and Bridgman growth, wafer preparation and specifications. 4 2. Epitaxial Growth: Thermodynamics of vapour phase growth, selective growth, MOCVD, molecular beam epitaxy technology, gas source MBE and chemical beam epitaxy. 4 3. Oxidation: Deal-Grove model, linear and parabolic rate coefficients, oxide characterization, types of oxidation and their kinematics, oxidation induced stacking faults, oxidation systems. 4 4. Etching: Wet etching, basic regimes of plasma etching, reactive ion etching and its damages, lift-off, and sputter etching. 4 5. Lithography: Optical, electron, X-ray and ion-beam, contact/proximity and projection printers, advanced mask concepts, alignment. 5 6. Diffusion and Ion-Implantation: Fick’s diffusion law, atomistic model, diffusion coefficient of common dopants and diffusion systems. Scattering phenomenon, projected range, channeling and lateral projected range, implantation damage, problems and concerns in ion-implantation systems. 6 7. Metallization: Applications and choices, physical vapor deposition, patterning, problem areas, multilevel metallization. 4 8. VLSI Process Integration: NMOS and CMOS IC technology, MOS 3 0 3 0 0 15 00 35 0050 0 3 √√√√
  • 2. memory IC technology, bipolar IC fabrication. 9. Assembly Technique and Packaging: Package types, packaging design consideration, VLSI assembly technologies. 4 10. Yield and Reliability: Yield loss in VLSI, yield loss modeling, reliability requirements, accelerated testing, BIST. 4 Total 42 11. Suggested Books: Sl. No. Name of Books / Authors Year of Publication 1. Sze, S.M., “VLSI Technology”, 4th Ed., Tata McGraw-Hill. 1999 2. Tyagi, M.S., “Introduction to Semiconductor Materials and Devices”, John Wiley & Sons. 1991 3. Chang, C.Y. and Sze, S.M., “ULSI Technology”, McGraw-Hill. 1996 4. Campbell, S.A., “The Science and Engineering of Microelectronic Fabrication”, 4th Ed., Oxford University Press. 1996 5. Plummer, J.D., Deal, M.D. and Griffin, P.B., “Silicon VLSI Technology: Fundamentals, Practice and Modeling”, 3rd Ed., Prentice-Hall. 2000 6. Chen W.K. (ed.), “VLSI Technology”, CRC Press. 2003