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Getting the Best Patterns

Using Cell-aware Fault Models




ITC Theater – 2011
Michael Reese, Jason Rivers
Previous Work
 Many published papers have addressed the problem of improving defect
  coverage

 2007/2008: EMD method was introduced (ITC 2007, paper 30.3; ITC 2008,
  paper 20.1)

 2009: Cell-aware basic methodology (ITC 2009, paper 1.2)

 2010: Cell-aware gross-delay methodology for cell-internal bridges and
  opens (ITC 2010, paper 10.1)

 2011: Gate-exhaustive versus Cell-aware pattern sets for industrial
  designs (VLSI-DAT 2011, paper w22)

 2011: Small-delay effects and production results (ITC 2011, paper
  9.1)

  – This year in ITC Session 9: Defects



       2 | ITC 2011 Theater | September 2011
                                                                           2
Fault Model Selection


                                            Gate-Exhaustive




                                               Which
                                               model
                                              shall we
                                                use




    3 | ITC 2011 Theater | September 2011
State-of-the-art Cell-Internal ATPG views


                                ATPG view
                                               ATPG tools use a gate level
    D0
                                     Z          description of the library cells
    D1
                                               They assume faults at the
    D2
                                                library cell ports and, optionally,
    S0                                          on the gate-level primitives
    S1
                                               The layout of the library cell
                                                often has significantly more
                                     Layout     faults
                  vdd                          But how should we map the
                                               layout related faults to the
             D2   S1    D0 S0   D1
                                               ATPG view?
         Z




                  gnd




    4 | ITC 2011 Theater | September 2011
Cell-Aware Layout Extraction - Bridges & Opens


                           Open         vdd
                                                                                 The resistors and parasitic capacitors
                           defect
                                                                                  are extracted from the layout
                M11
             c1       c3                                                         Each capacitor results in a potential
           4 c2       R3 6                                                        bridge defect
               c4D2 c5
      Z
                     R4                                                          Each resistor results in a potential
                M1                                                                open defect
     Bridge
     defect                              gnd                                     The cell-aware tool will insert one
                                                                                  defect at a time into the transistor
                   Open
                                                                      vdd
                                                                                  netlist
                                                                      R
                  defect                            net4    net6
                                                                      8
                 R3 = 1GΩ
                                               R3
                                                       c1        c3
                                                                       M11
                                                                                 The analog simulation is then started
               net4 net6          net4 net6
                                                                 c2
                                                                      R           with the defective netlist to analyze if
                                                                      7
                                                    gnd      Z
                                                                          gnd
                                                                                  the defects (bridges and opens) can
D2        R1                 R2
                                                                                  be detected
                                                    net4    net6      R
               gnd                gnd
                                                                      6
                      Bridge                   R4
                                                       c4        c5
                                                                       M1        The result of this analog fault
                      defect
                      R = 1Ω                        gnd
                                                                      R           simulation is a detection matrix
                                                                      5
                                                                          gnd




                     5 | ITC 2011 Theater | September 2011
The new Cell-Aware Methodology

                                                                                                  Library
                                                                                                   Characterization Flow
                                                                Cell-Aware                         — One time task per tech
           Layout                   Analog Fault
          Extraction                 Simulation                 Fault Model
                                                                Generation
                                                                                   Reports         — The characterization is
 Cell                   SPICE                         Defect                                         typically done by a central
Layout                 parasitics                     Matrix                       UDFM
                                                                                                     library organization
GDS2                    netlist                                                       User         — The generated cell-aware
                                      defects                                        Defined
                                                                                                     view can be used for every
                                                                                      Fault
                   Library Characterization Flow                                      Model          design in that technology
                                                                                                   — Flow automation tool is part
                                                                                                     of the Tessent ® tool suite

                                                                                                  Normal Design Flow
                                                  UDFM                                             — The design flow is not
                                                                                                     affected at all
                                                                                                   — No layout data is needed
                   Normal                       Cell-Aware                 Test                      because the layout is taken
                  Synthesis                       ATPG                    System
         RTL                        .V                         .STIL                                 into account already during
                                                                                                     the characterization flow
                                                                                                   — The UDFM ATPG is a new
                              Normal Design Flow                                                     function in Tessent
                                                                                                     FastScan ®


                  6 | ITC 2011 Theater | September 2011
32-nm Results




7 | ITC 2011 Theater | September 2011
Cell Library Cell-aware Defects


                                    Cell-Aware Additional Defects
             900
                            imux6                                   # Internal Defects
             800
                                                                    # SA and TR Faults
             700
                                    imux4
             600
 # Defects




                                               imux3
             500

             400

             300

             200

             100

               0

                                               Standard Cells

         For some cells there are significant numbers of
         faults that are not specifically targeted

                   8 | ITC 2011 Theater | September 2011
32-nm Technology ATPG Test Flow


             fail                                                                  exit
TR N-det
At-speed     pass
                      SA          fail
                    Slow-
                    speed       pass
                                                        continue on fail
 log fails          Topoff

                                             CA-1                      CA-2
                                           At-speed                Slow-speed
                    log fails                                         Topoff



                                            log fails                  log fails




 Normal Production Test                        Faultmodel experiment




   9 | ITC 2011 Theater | September 2011
Slow- and At-speed Cell-aware Gains

                                       32nm Design - Slow Speed Cell-Aware Defect Coverage Gain [%]
                                                                                                                                                           Slow-speed Coverage Gain
                                 1.4                                                                         18

                                                    16,988 faults                 Defect Coverage Gain [%]   16                                             49,705 faults (0.23%)
Defect Coverage Gain [%]




                                 1.2




                                                                                                                                   # Defects [Thousands]
                                                                                  # Defects [Thousands]
                                                                                                             14
                                 1.0
                                                                                                             12
                                                                                                                                                                                    *imux3*
                                 0.8                                                                         10
                                                   6,873 faults                                                                                                                     *aoi*
                                 0.6                                          10,240 faults                  8
                                                                                                             6                                                                      *nd4*
                                 0.4
                                                                                                             4
                                 0.2
                                                                                                                                                                                    *imux4*
                                                                                                             2
                                 0.0                                                                         0
                                                                                                                                                                                    *nr3*
                                                                                                                                                                                    *oai*


                                                                                                                                                           At-speed Coverage Gain
                                        32nm Design - At Speed Cell-Aware Defect Coverage Gain [%]
                                 3.0                                                                         40
                                                                                                                                                           137,730 faults (0.81%)
                                          33,931 faults
      Defect Coverage Gain [%]




                                                                                 Defect Coverage Gain [%]    35




                                                                                                                  # Defects [Thousands]
                                 2.5
                                                                                 # Defects [Thousands]
                                                                                                             30
                                 2.0                                                                                                                                                *imux3*
                                                                                                             25

                                                    11,901 faults                                                                                                                   *aoi*
                                 1.5                                            24,367 faults                20

                                                                                                             15                                                                     *nd3*
                                 1.0
                                                                                                             10                                                                     *nd4*
                                 0.5
                                                                                                             5
                                                                                                                                                                                    *nr3*
                                 0.0                                                                         0
                                                                                                                                                                                    *imux4*
                                                                                                                                                                                    *nr2*
                                                                                                                                                                                    *oai*



                                          10 | ITC 2011 Theater | September 2011
Identifying the Location of the Additional
                 Coverage for the Cell imux3_fre
 10,768 additional defects                                                                       Add'l Coverage by Cell Aware Defect Type
                                                                                                              Slow Speed ATPG
  covered of possible 648,660                                                                18




                                                             Added Defect Detection [x100]
                                                                                             16                      Add'l Defects Detected by Type
   – 1.66% improvement                                                                       14
                                                                                             12
 New MTFI 1.0 fault list                                                                    10
                                                                                             8
  format                                                                                     6
                                                                                             4
   – Allows clear connection                                                                 2
                                                                                             0
     between coverage and
     defect source
Instance   “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "Bridge_D102_VDD_S1#MP7g_10.0_Ohm_Deviation63", DS; }
Instance   “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "Bridge_D63_S0#5_D11#1_1.0_Ohm_Deviation44", DS; }
<…>
Instance   “CORE/BLOCK/UU_ScanEndBitsHi_X7"   {   "Bridge_D81_Z#5_NET053#MI0/MP0g_1.0_Ohm_Deviation68", DS; }
Instance   “CORE/BLOCK/UU_ScanEndBitsHi_X7"   {   "Open_D112_D0Xin_D0X_1000000000.0_Ohm_Deviation88", DS; }
Instance   “CORE/BLOCK/UU_ScanEndBitsHi_X7"   {   "Open_D177_S0N#11_S0N#17_1000000000.0_Ohm_Deviation52", UO; }
Instance   “CORE/BLOCK/UU_ScanEndBitsHi_X7"   {   "sa0_D0X", DS; }
Instance   “CORE/BLOCK/UU_ScanEndBitsHi_X7"   {   "sa1_S0", DS; }
<…>
Instance   “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "sa1_S1", DS; }
Instance   "CORE/BLOCK/UU_ScanEndBitsHi_X7" { "sa1_Z", DS; }




               11 | ITC 2011 Theater | September 2011
Bridge_D63_S0#11_D01#1_1.0_Ohm


D00
      0
                             MP2             MP4



S0
          0
                             MP1             MP3

                                                       MP5
                                                       MN5

                MP9

                                              MN3
                              MN1
                MN9



                                    1
                              MN2             MN4
                                                             Z

D01
S1

                  MP7



                  MN7
                              MP8                      MP6
D1X                                                    MN6


                              MN8




              12 | ITC 2011 Theater | September 2011
Bridge_D81_D01#1_S0N#16_1.0_Ohm


D00
      0
                         MP2             MP4



S0
                         MP1             MP3

                                                   MP5
                                                   MN5

            MP9   1
                                          MN3
                          MN1
            MN9



                                0
                          MN2             MN4
                                                         Z

D01
S1

              MP7



              MN7
                          MP8                      MP6
D1X                                                MN6


                          MN8




          13 | ITC 2011 Theater | September 2011
32-nm Technology ATPG Test Flow


             fail                                                                  exit
TR N-det
At-speed     pass
                      SA         fail
                    Slow-
                    speed                               continue on fail
 log fails          Topoff        pass

                                             CA-1                      CA-2
                                           At-speed                Slow-speed
                    log fails                                         Topoff



                                            log fails                  log fails




 Normal Production Test                        Faultmodel experiment




  14 | ITC 2011 Theater | September 2011
AMD Results – 32-nm experiment



              Pattern Results                #fails   Actual PPM Gains
               ~ 400K units
                Slow Speed
                                              98            218
                 Cell Aware
                 At-Speed
                                              268           597
                 Cell Aware


 Predicted coverage gains align with actual experimental
  results
 The methodology has demonstrated an ability to target
  otherwise uncovered and hard-to-get-to defect sites




    15 | ITC 2011 Theater | September 2011
Acknowledgements

 Advanced Micro Devices                      Mentor Graphics
 – Daniela Toneva                             – Friedrich Hapke
 – Jeff Rearick                               – Wilfried Redemund
 – Jason Rivers                               – Juergen Schloeffel
 – Andrew Over                                – Andreas Glowatz
 – Melody Caron                               – Ken Amstutz
 – Joe Caroselli
 – John Schulze



    16 | ITC 2011 Theater | September 2011
Trademark Attribution
AMD, the AMD Arrow logo AMD Opteron and
combinations thereof are trademarks of Advanced
Micro Devices, Inc. in the United States and/or other
jurisdictions. Other names used in this presentation
are for identification purposes only and may be
trademarks of their respective owners.
©2011 Advanced Micro Devices, Inc. All rights
reserved.




    17 | ITC 2011 Theater | September 2011

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Itc Theater09 Sep1420 P Redits Done

  • 1. Getting the Best Patterns Using Cell-aware Fault Models ITC Theater – 2011 Michael Reese, Jason Rivers
  • 2. Previous Work  Many published papers have addressed the problem of improving defect coverage  2007/2008: EMD method was introduced (ITC 2007, paper 30.3; ITC 2008, paper 20.1)  2009: Cell-aware basic methodology (ITC 2009, paper 1.2)  2010: Cell-aware gross-delay methodology for cell-internal bridges and opens (ITC 2010, paper 10.1)  2011: Gate-exhaustive versus Cell-aware pattern sets for industrial designs (VLSI-DAT 2011, paper w22)  2011: Small-delay effects and production results (ITC 2011, paper 9.1) – This year in ITC Session 9: Defects 2 | ITC 2011 Theater | September 2011 2
  • 3. Fault Model Selection Gate-Exhaustive Which model shall we use 3 | ITC 2011 Theater | September 2011
  • 4. State-of-the-art Cell-Internal ATPG views ATPG view  ATPG tools use a gate level D0 Z description of the library cells D1  They assume faults at the D2 library cell ports and, optionally, S0 on the gate-level primitives S1  The layout of the library cell often has significantly more Layout faults vdd But how should we map the layout related faults to the D2 S1 D0 S0 D1 ATPG view? Z gnd 4 | ITC 2011 Theater | September 2011
  • 5. Cell-Aware Layout Extraction - Bridges & Opens Open vdd  The resistors and parasitic capacitors defect are extracted from the layout M11 c1 c3  Each capacitor results in a potential 4 c2 R3 6 bridge defect c4D2 c5 Z R4  Each resistor results in a potential M1 open defect Bridge defect gnd  The cell-aware tool will insert one defect at a time into the transistor Open vdd netlist R defect net4 net6 8 R3 = 1GΩ R3 c1 c3 M11  The analog simulation is then started net4 net6 net4 net6 c2 R with the defective netlist to analyze if 7 gnd Z gnd the defects (bridges and opens) can D2 R1 R2 be detected net4 net6 R gnd gnd 6 Bridge R4 c4 c5 M1  The result of this analog fault defect R = 1Ω gnd R simulation is a detection matrix 5 gnd 5 | ITC 2011 Theater | September 2011
  • 6. The new Cell-Aware Methodology  Library Characterization Flow Cell-Aware — One time task per tech Layout Analog Fault Extraction Simulation Fault Model Generation Reports — The characterization is Cell SPICE Defect typically done by a central Layout parasitics Matrix UDFM library organization GDS2 netlist User — The generated cell-aware defects Defined view can be used for every Fault Library Characterization Flow Model design in that technology — Flow automation tool is part of the Tessent ® tool suite  Normal Design Flow UDFM — The design flow is not affected at all — No layout data is needed Normal Cell-Aware Test because the layout is taken Synthesis ATPG System RTL .V .STIL into account already during the characterization flow — The UDFM ATPG is a new Normal Design Flow function in Tessent FastScan ® 6 | ITC 2011 Theater | September 2011
  • 7. 32-nm Results 7 | ITC 2011 Theater | September 2011
  • 8. Cell Library Cell-aware Defects Cell-Aware Additional Defects 900 imux6 # Internal Defects 800 # SA and TR Faults 700 imux4 600 # Defects imux3 500 400 300 200 100 0 Standard Cells For some cells there are significant numbers of faults that are not specifically targeted 8 | ITC 2011 Theater | September 2011
  • 9. 32-nm Technology ATPG Test Flow fail exit TR N-det At-speed pass SA fail Slow- speed pass continue on fail log fails Topoff CA-1 CA-2 At-speed Slow-speed log fails Topoff log fails log fails Normal Production Test Faultmodel experiment 9 | ITC 2011 Theater | September 2011
  • 10. Slow- and At-speed Cell-aware Gains 32nm Design - Slow Speed Cell-Aware Defect Coverage Gain [%] Slow-speed Coverage Gain 1.4 18 16,988 faults Defect Coverage Gain [%] 16 49,705 faults (0.23%) Defect Coverage Gain [%] 1.2 # Defects [Thousands] # Defects [Thousands] 14 1.0 12 *imux3* 0.8 10 6,873 faults *aoi* 0.6 10,240 faults 8 6 *nd4* 0.4 4 0.2 *imux4* 2 0.0 0 *nr3* *oai* At-speed Coverage Gain 32nm Design - At Speed Cell-Aware Defect Coverage Gain [%] 3.0 40 137,730 faults (0.81%) 33,931 faults Defect Coverage Gain [%] Defect Coverage Gain [%] 35 # Defects [Thousands] 2.5 # Defects [Thousands] 30 2.0 *imux3* 25 11,901 faults *aoi* 1.5 24,367 faults 20 15 *nd3* 1.0 10 *nd4* 0.5 5 *nr3* 0.0 0 *imux4* *nr2* *oai* 10 | ITC 2011 Theater | September 2011
  • 11. Identifying the Location of the Additional Coverage for the Cell imux3_fre  10,768 additional defects Add'l Coverage by Cell Aware Defect Type Slow Speed ATPG covered of possible 648,660 18 Added Defect Detection [x100] 16 Add'l Defects Detected by Type – 1.66% improvement 14 12  New MTFI 1.0 fault list 10 8 format 6 4 – Allows clear connection 2 0 between coverage and defect source Instance “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "Bridge_D102_VDD_S1#MP7g_10.0_Ohm_Deviation63", DS; } Instance “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "Bridge_D63_S0#5_D11#1_1.0_Ohm_Deviation44", DS; } <…> Instance “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "Bridge_D81_Z#5_NET053#MI0/MP0g_1.0_Ohm_Deviation68", DS; } Instance “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "Open_D112_D0Xin_D0X_1000000000.0_Ohm_Deviation88", DS; } Instance “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "Open_D177_S0N#11_S0N#17_1000000000.0_Ohm_Deviation52", UO; } Instance “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "sa0_D0X", DS; } Instance “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "sa1_S0", DS; } <…> Instance “CORE/BLOCK/UU_ScanEndBitsHi_X7" { "sa1_S1", DS; } Instance "CORE/BLOCK/UU_ScanEndBitsHi_X7" { "sa1_Z", DS; } 11 | ITC 2011 Theater | September 2011
  • 12. Bridge_D63_S0#11_D01#1_1.0_Ohm D00 0 MP2 MP4 S0 0 MP1 MP3 MP5 MN5 MP9 MN3 MN1 MN9 1 MN2 MN4 Z D01 S1 MP7 MN7 MP8 MP6 D1X MN6 MN8 12 | ITC 2011 Theater | September 2011
  • 13. Bridge_D81_D01#1_S0N#16_1.0_Ohm D00 0 MP2 MP4 S0 MP1 MP3 MP5 MN5 MP9 1 MN3 MN1 MN9 0 MN2 MN4 Z D01 S1 MP7 MN7 MP8 MP6 D1X MN6 MN8 13 | ITC 2011 Theater | September 2011
  • 14. 32-nm Technology ATPG Test Flow fail exit TR N-det At-speed pass SA fail Slow- speed continue on fail log fails Topoff pass CA-1 CA-2 At-speed Slow-speed log fails Topoff log fails log fails Normal Production Test Faultmodel experiment 14 | ITC 2011 Theater | September 2011
  • 15. AMD Results – 32-nm experiment Pattern Results #fails Actual PPM Gains ~ 400K units Slow Speed 98 218 Cell Aware At-Speed 268 597 Cell Aware  Predicted coverage gains align with actual experimental results  The methodology has demonstrated an ability to target otherwise uncovered and hard-to-get-to defect sites 15 | ITC 2011 Theater | September 2011
  • 16. Acknowledgements  Advanced Micro Devices  Mentor Graphics – Daniela Toneva – Friedrich Hapke – Jeff Rearick – Wilfried Redemund – Jason Rivers – Juergen Schloeffel – Andrew Over – Andreas Glowatz – Melody Caron – Ken Amstutz – Joe Caroselli – John Schulze 16 | ITC 2011 Theater | September 2011
  • 17. Trademark Attribution AMD, the AMD Arrow logo AMD Opteron and combinations thereof are trademarks of Advanced Micro Devices, Inc. in the United States and/or other jurisdictions. Other names used in this presentation are for identification purposes only and may be trademarks of their respective owners. ©2011 Advanced Micro Devices, Inc. All rights reserved. 17 | ITC 2011 Theater | September 2011