SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK

124 views

Published on

SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

Published in: Technology, Education
0 Comments
0 Likes
Statistics
Notes
  • Be the first to comment

  • Be the first to like this

No Downloads
Views
Total views
124
On SlideShare
0
From Embeds
0
Number of Embeds
3
Actions
Shares
0
Downloads
1
Comments
0
Likes
0
Embeds 0
No embeds

No notes for slide

SPICE MODEL of SCS212AM (Professional Model) in SPICE PARK

  1. 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: SCS212AM MANUFACTURER: ROHM REAMARK: POFESSIONAL MODEL
  2. 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  3. 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 R1 0.01m V1 0Vdc 0 U1 SCS212AM_P V_V1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 1.0mA 10mA 100mA 1.0A 10A 100A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  4. 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.001 0.700 0.697 -0.43 0.01 0.760 0.756 -0.53 0.1 0.830 0.820 -1.20 1 0.910 0.913 0.33 2 0.970 0.970 0.00 5 1.100 1.100 0.00 10 1.300 1.314 1.11 20 1.720 1.711 -0.52 38 2.500 2.410 -3.60
  5. 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 0 V1 TD = 0 TF = 500ns PW = 100us PER = 500us V1 = 0 TR = 10us V2 = 650 V2 0Vdc U1 SCS212AM_P V(N16650) 10mV 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/10us) 10p 100p 1.0n Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  6. 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR (V) CT (pF) %Error Measurement Simulation 0.01 600.000 594.100 -0.98 0.1 580.000 572.000 -1.38 1 430.000 427.800 -0.51 10 170.000 164.700 -3.12 100 65.000 63.600 -2.15 200 52.000 53.900 3.65 500 47.000 46.900 -0.21
  7. 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V1 0Vdc R1 100m 0 U1 SCS212AM_P V_V1 0V 200V 400V 600V I(R1) 10nA 100nA 1.0uA 10uA 100uA Reverse Characteristic Circuit Simulation result Evaluation circuit
  8. 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 0.01 410.0 398.4 -2.83 0.1 493.0 491.1 -0.39 1.7 600.0 597.5 -0.42

×