This document provides product information for Power Innovations Limited's TIC226 series silicon triacs. It includes: - Electrical ratings and characteristics like maximum off-state voltage, on-state current, and trigger parameters. - Package and pinout details for the TO-220 plastic package. - Typical characteristic curves showing parameters like trigger current and voltage over temperature. - Test method diagrams and notes on measurement of parameters like RMS on-state current. - Important legal notices regarding the product information and warranty.

1. TIC226 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
1
APRIL 1971 - REVISED MARCH 1997Copyright © 1997, Power Innovations Limited, UK
Information is current as of publication date. Products conform to specifications in accordance
with the terms of Power Innovations standard warranty. Production processing does not
necessarily include testing of all parameters.
q 8 A RMS, 70 A Peak
q Glass Passivated Wafer
q 400 V to 800 V Off-State Voltage
q Max IGT of 50 mA (Quadrants 1 - 3)
MT1
MT2
G
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDC2ACA
1
2
3
absolute maximum ratings over operating case temperature (unless otherwise noted)
NOTES: 1. These values apply bidirectionally for any value of resistance between the gate and Main Terminal 1.
2. This value applies for 50-Hz full-sine-wave operation with resistive load. Above 85°C derate linearly to 110°C case temperature at
the rate of 320 mA/°C.
3. This value applies for one 50-Hz full-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
4. This value applies for one 50-Hz half-sine-wave when the device is operating at (or below) the rated value of on-state current.
Surge may be repeated after the device has returned to original thermal equilibrium. During the surge, gate control may be lost.
5. This value applies for a maximum averaging time of 20 ms.
RATING SYMBOL VALUE UNIT
Repetitive peak off-state voltage (see Note 1)
TIC226D
TIC226M
TIC226S
TIC226N
VDRM
400
600
700
800
V
Full-cycle RMS on-state current at (or below) 85°C case temperature (see Note 2) IT(RMS) 8 A
Peak on-state surge current full-sine-wave (see Note 3) ITSM 70 A
Peak on-state surge current half-sine-wave (see Note 4) ITSM 80 A
Peak gate current IGM ±1 A
Peak gate power dissipation at (or below) 85°C case temperature (pulse width ≤ 200 µs) PGM 2.2 W
Average gate power dissipation at (or below) 85°C case temperature (see Note 5) PG(AV) 0.9 W
Operating case temperature range TC -40 to +110 °C
Storage temperature range Tstg -40 to +125 °C
Lead temperature 1.6 mm from case for 10 seconds TL 230 °C
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
IDRM
Repetitive peak
off-state current
VD = rated VDRM IG = 0 TC = 110°C ±2 mA
IGTM
Peak gate trigger
current
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
2
-12
-9
20
50
-50
-50
mA
VGTM
Peak gate trigger
voltage
Vsupply = +12 V†
Vsupply = +12 V†
Vsupply = -12 V†
Vsupply = -12 V†
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
RL = 10 Ω
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
tp(g) > 20 µs
0.7
-0.8
-0.8
0.9
2
-2
-2
2
V
† All voltages are with respect to Main Terminal 1.

2. TIC226 SERIES
SILICON TRIACS
2
APRIL 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
† All voltages are with respect to Main Terminal 1.
NOTES: 6. This parameter must be measured using pulse techniques, tp = ≤ 1 ms, duty cycle ≤ 2 %. Voltage-sensing contacts separate from
the current carrying contacts are located within 3.2 mm from the device body.
7. The triacs are triggered by a 15-V (open-circuit amplitude) pulse supplied by a generator with the following characteristics:
RG = 100 Ω, tp(g) = 20 µs, tr = ≤ 15 ns, f = 1 kHz.
VTM Peak on-state voltage ITM = ±12 A IG = 50 mA (see Note 6) ±1.6 ±2.1 V
IH Holding current
Vsupply = +12 V†
Vsupply = -12 V†
IG = 0
IG = 0
Init’ ITM = 100 mA
Init’ ITM = -100 mA
5
-9
30
-30
mA
IL Latching current
Vsupply = +12 V†
Vsupply = -12 V†
(see Note 7)
50
-50
mA
dv/dt
Critical rate of rise of
off-state voltage
VDRM = Rated VDRM IG = 0 TC = 110°C ±100 V/µs
dv/dt(c)
Critical rise of commu-
tation voltage
VDRM = Rated VDRM ITRM = ±12 A TC = 85°C ±5 V/µs
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 1.8 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
electrical characteristics at 25°C case temperature (unless otherwise noted) (continued)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
GATE TRIGGER CURRENT
TC
- Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IGT
-GateTriggerCurrent-mA
0·1
1
10
100
1000
TC01AA
CASE TEMPERATURE
vs
VAA = ± 12 V
RL = 10 ΩΩ
tp(g)
= 20 µs
Vsupply IGTM
+ +
+ -
- -
- +
GATE TRIGGER VOLTAGE
TC
- Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
VGT-GateTriggerVoltage-V
0·1
1
10
TC01AB
CASE TEMPERATURE
vs
Vsupply
IGTM
+ +
+ -
- -
- +
VAA = ± 12 V
RL = 10 ΩΩ
tp(g)
= 20 µs

3. 3
APRIL 1971 - REVISED MARCH 1997
TIC226 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 3. Figure 4.
Figure 5. Figure 6.
HOLDING CURRENT
TC
- Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IH-HoldingCurrent-mA
0·1
1
10
100
1000
TC01AD
CASE TEMPERATURE
vs
Vsupply
+
-
VAA = ± 12 V
IG = 0
Initiating ITM
= 100 mA
GATE FORWARD VOLTAGE
IGF
- Gate Forward Current - A
0·0001 0·001 0·01 0·1 1
VGF-GateForwardVoltage-V
0·01
0·1
1
10
TC01AC
GATE FORWARD CURRENT
vs
IA = 0
TC
= 25 °C
QUADRANT 1
LATCHING CURRENT
TC
- Case Temperature - °C
-60 -40 -20 0 20 40 60 80 100 120
IL-LatchingCurrent-mA
1
10
100
1000
TC01AE
CASE TEMPERATURE
vs
VAA = ± 12 VVsupply IGTM
+ +
+ -
- -
- +
SURGE ON-STATE CURRENT
Consecutive 50-Hz Half-Sine-Wave Cycles
1 10 100 1000
ITSM-PeakFull-Sine-WaveCurrent-A
1
10
100
TI01AA
CYCLES OF CURRENT DURATION
vs
No Prior Device Conduction
Gate Control Guaranteed
TC
≤≤ 85 °C

4. TIC226 SERIES
SILICON TRIACS
4
APRIL 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
TYPICAL CHARACTERISTICS
Figure 7. Figure 8.
PARAMETER MEASUREMENT INFORMATION
MAX RMS ON-STATE CURRENT
TC
- Case Temperature - °C
0 25 50 75 100 125 150
IT(RMS)-MaximumOn-StateCurrent-A
0
1
2
3
4
5
6
7
8
9
10
TI01AB
CASE TEMPERATURE
vs
MAX AVERAGE POWER DISSIPATED
IT(RMS)
- RMS On-State Current - A
0 2 4 6 8 10 12 14 16
P(av)-MaximumAveragePowerDissipated-W
0
4
8
12
16
20
24
28
32
TI01AC
RMS ON-STATE CURRENT
vs
Conduction Angle = 360 °
Above 8 A rms
TJ = 110 °C
See ITSM Figure
VAC
VMT2
IMT2
DUT
See
Note A
RG
C1
R1
IG
VAC
IMT2
VMT2
IG
ITRM
dv/dt
10%
63%
L1
VDRM
50 Hz
PMC2AA
NOTE A: The gate-current pulse is furnished by a trigger circuit which presents essentially an open circuit between pulses. The pulse is timed
so that the off-state-voltage duration is approximately 800 µs.
Figure 9.

5. 5
APRIL 1971 - REVISED MARCH 1997
TIC226 SERIES
SILICON TRIACS
P R O D U C T I N F O R M A T I O N
TO-220
3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic
compound. The compound will withstand soldering temperature with no deformation, and circuit performance
characteristics will remain stable when operated in high humidity conditions. Leads require no additional
cleaning or processing when used in soldered assembly.
MECHANICAL DATA
TO220
ALL LINEAR DIMENSIONS IN MILLIMETERS
ø 1,23
1,32
4,20
4,70
1 2 3
0,97
0,61
see Note C
see Note B
10,0
10,4
2,54
2,95
6,0
6,6
14,55
15,90
12,7
14,1
3,5
6,1
1,07
1,70
2,34
2,74
4,88
5,28
3,71
3,96
0,41
0,64
2,40
2,90
VERSION 2VERSION 1
NOTES: A. The centre pin is in electrical contact with the mounting tab.
B. Mounting tab corner profile according to package version.
C. Typical fixing hole centre stand off height according to package version.
Version 1, 18.0 mm. Version 2, 17.6 mm.
MDXXBE

6. TIC226 SERIES
SILICON TRIACS
6
APRIL 1971 - REVISED MARCH 1997
P R O D U C T I N F O R M A T I O N
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any
semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the
information being relied on is current.
PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in
accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI
deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily
performed, except as mandated by government requirements.
PI accepts no liability for applications assistance, customer product design, software performance, or infringement
of patents or services described herein. Nor is any license, either express or implied, granted under any patent
right, copyright, design right, or other intellectual property right of PI covering or relating to any combination,
machine, or process in which such semiconductor products or services might be or are used.
PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE
SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright © 1997, Power Innovations Limited