This document provides a device modeling report for a Toshiba CMZB16 Zener diode. It includes the equivalent circuit model, PSpice model parameters, description of the model, and comparison of simulated and measured characteristics in forward and reverse bias conditions. The simulation results match the measurements well with less than 2% error.

1. All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: Zener Diode
PART NUMBER: CMZB16
MANUFACTURER: TOSHIBA

2. All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
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Equivalent circuit
PSpice model
parameter
Model description
IS Saturation Current
RS Series Resistance
IKF High-injection Knee Current
M Junction Grading Coefficient
N Emission Coefficient
XTI Saturation Current temp.exp
DFCMZB16
D1
A
K
RZ
0.5
1
IN-
OUT+
OUT-
IN+
GZ
EXP(V(%IN+, %IN-)/.281)
2
BV
17.468
IN-
OUT+
OUT-
IN+
GREV
LIMIT(51.529E-6*(EXP(V(%IN+, %IN-)/50)-1),-10M,0)

3. All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
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R1
0.01m
VR
0
U1
CMZB16
V_VR
0V 4V 8V 12V 16V 20V
I(U1:K)
100nA
1.0uA
10uA
100uA
1.0mA
10mA
100mA
Reverse Characteristic
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation
Parameter Condition Measurement Simulation %Error
VZ(V) IZ=10(mA) 16.000 16.179 1.12
rd(Ω) IZ=10(mA) 30.000 30.398 1.33
IR(uA) VR=11(V) 10.000 10.176 1.76

4. All Rights Reserved Copyright (c) Bee Technologies Inc. 2013
4
R1
0.01m
VF
0
U1
CMZB16
V_VF
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V 1.4V 1.6V 1.8V
I(U1:A)
10mA
100mA
1.0A
10A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
Comparison Measurement vs. Simulation: Condition IF=0.2(A)
Parameter Unit Measurement Simulation %Error
VF V 1.200 1.200 0.00