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SPICE MODEL of 1MBH50D-060 (Professional+FWDS Model) in SPICE PARK
The document provides a comprehensive device modeling report for the insulated gate bipolar transistor (IGBT) part number 1MBH50D-060 from Fuji Electric, detailing various circuit simulation results such as transfer, fall time, gate charge, saturation, output, forward current, and reverse recovery characteristics. It includes parameters, measurements, and error percentages in comparison to simulated data under specified test conditions. The information presented illustrates the performance and reliability of the IGBT in different operational scenarios.
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SPICE MODEL of 1MBH50D-060 (Professional+FWDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS:Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MBH50D-060 MANUFACTURER: FUJI ELECTRIC *REMARK: Free-Wheeling Diode (Standard Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 2. Transfer Characteristics Circuit Simulationresult 100A 80A 60A 40A 20A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 1MBH50D-060 D1 VCE D1MBH50D-060 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 3. Comparison Graph Simulation result Comparisontable Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 2 8.000 8.003 0.04 44 10.000 9.985 -0.15 100 11.665 11.642 -0.20 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 4. Fall Time Characteristics CircuitSimulation result 50A 40A 30A 20A 10A 0A 4.0us 4.4us 4.8us 5.2us 5.6us 6.0us 6.4us 6.8us I(RL) Time Evaluation circuit RL Rg U1 5.95 1MBH50D-060 V1 = -15 D1 V2 = 15 62 D1MBH50D-060 TD = 0.5u V1 TR = 10n VCE TF = 1n 300Vdc PW = 4u PER = 20u 0 Test condition: IC=50 (A), VCC=300 (V) Parameter Unit Measurement Simulation %Error tf us 0.130 0.129 -0.77 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 5. Gate Charge Characteristics CircuitSimulation result 20V 15V 10V 5V 0V 0 50n 100n 150n 200n 250n V(W1:1) Time*1mA Evaluation circuit V2 0 IC D2 U1 Dbreak 50 1MBH50D-060 D1 I1 = 0 D1MBH50D-060 I2 = 1m W1 W TF = 10n + IOFF = 100uA TR = 10n ION = 0A VCC TD = 0 I2 - PER = 700m 300 PW = 7m 0 Test condition: VCC=300 (V), IC=50 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 30.000 30.822 2.74 Qgc nc 85.000 86.301 1.53 Qg nc 178.000 177.364 -0.36 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 6. Saturation Characteristics Circuit Simulationresult 100A 80A 60A 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(IC) V(IC:-) Evaluation circuit U1 1MBH50D-060 IC D1 0Adc D1MBH50D-060 VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 7. Comparison Graph Simulation result Comparisontable Test condition: VGE =15 (V) VCE (V) IC(A) %Error Measurement Simulation 5 1.340 1.355 1.11 10 1.550 1.530 -1.29 20 1.830 1.827 -0.16 50 2.500 2.505 0.20 80 3.085 3.068 -0.54 100 3.500 3.492 -0.23 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 8. Output Characteristics Circuit Simulationresult 100A 20 15 12 80A V V V 60A 10 40A V 20A VGE=8 0A 0V 1.0V 2.0V 3.0V 4.0V V 5.0V I(R1) V_VCE Evaluation circuit R1 0.001m U1 1MBH50D-060 VCE D1 5Vdc D1MBH50D-060 VGE 0 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 9. FWD Forward CurrentCharacteristics Circuit Simulation result 100A 80A 60A 40A 20A 0A 0V 1.0V 2.0V 3.0V 4.0V I(Vsense) V(EC) Evaluation circuit Vsense V1 EC 0Vdc 0Vdc V2 U1 1MBH50D-060 D1 D1MBH50D-060 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 10. Comparison Graph Simulation result Comparisontable VF (V) IF(A) %Error Measurement Simulation 2 1.025 1.058 3.22 5 1.220 1.239 1.56 10 1.440 1.417 -1.60 20 1.725 1.665 -3.50 50 2.265 2.225 -1.77 100 2.975 3.028 1.77 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
- 11. Reverse Recovery Characteristics CircuitSimulation result 50A 40A 30A 20A 10A 0A -10A 5.0us 5.2us 5.4us 5.6us 5.8us 6.0us 6.2us 6.4us 6.6us 6.8us I(FWD) Time Evaluation circuit L2 1 2 0.98uH U2 1MBH50D-060 D2 D1MBH50D-060 L1 1500uH FWD 2 1 IC = 50 C VCE 300 Rg U1 1MBH50D-060 V1 = -15 D1 V2 = 15 220 D1MBH50D-060 TD = 4.5u V1 TR = 10n TF = 10n PW = 4.998u PER = 100u 0 Test condition: VCC=300 (V), IC=50 (A), -di/dt=150 (A/us) Parameter Unit Measurement Simulation %Error trr ns 155.000 68.422 -55.86 Irr A 7.500 7.494 -0.08 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009