1. Andreas Sotiropoulos
Artis 22 Date of Birth: 25/06/1973
Nea Philadelphia Marital Status: married
Athens Nationality: Hellenic
14342
Greece
Tel: +306946938644(cell phone), +302106391183(home), +302102756206,
Email: asotirop@yahoo.com
EDUCATION
2004-2009 National Technical University of Athens (N.T.U.A), School of Applied Mathematical
and Physical Science, Athens, Greece
PhD Experimental science matter physics
Thesis Title: “Molecular Beam Epitaxy deposition and electrical characterization of thin
films HfO2/CeO2 on substrates Ge: applications on MOSFETs”
Supervised by Dr. A. Dimoulas , funded by research centre of NCSR ‘’Demokritos’’
(Greece)
Topics investigated: CV- JV-GV characteristics, RHEED, (XPS analysis)
2006-2007 Teaching in NTUA ( students in Electrology)
2003.2004 Department of Physics, The University of Ioannina, Ioannina, Greece
MPhys (Hons) Master of Physics in surface science
“Deposition study of Cesium (Cs) on Selinated Si(100)2×1 surfaces and of Selenium (Se)
on Cesiated Si(100)2×1 surfaces”
Supervised by Prof C.A. Papageorgopoulos and Dr. M. Kamaratos
2000.2001 University of Lecce, Department of physics in Thin Films, Italy
laboratory experience (2 months)
1998-2003 Research activities in my graduate studies
1996-1998 Department of Physics, The University of Ioannina, Ioannina, Greece
Postgraduate studies
Present a work in Seminars in the University of Ioannina with title :’’Techniques of Surface
Science (AES, WF, LEED, TDS) and applications in the system of deposition of Cs and Se
on Si(100)-2×1 surfaces’’
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2. 1992.1996 Department of Physics, The University of Ioannina, Ioannina, Greece
Bachelor in Physics
WORKING EXPERIENCE
May 2014- June 2015 National Center for Scientific Research (NCSR) ''DEMOKRITOS'',
Department of Microelectronics (Institute of Nanoscience and
Nanotechnology-INN) (Dr. K. Misiakos), Research activity as Post Doc in
ESPA program (Solar Cells-Investigation of Gratings on front and back
surfaces on Si substrates)
2012-2014 Private Lessons in students
2011-2012 NCSR ‘Demokritos’, Department of Microelectronics (Dr. A. Nassiopoulou), Research
activity as Post Doc in SE2A program (RF Sputtering)
2010-2011 Private Lessons in students
2004-2010 NCSR ‘Demokritos’, Department of Science Matter. Electrology Laborator
Demonstrator for one semester (2007), Department of Applied Mathematical and
Physical Sciences, National Technical University of Athens, Greece. Photoelectric effect
2009-2010 Research activities at NCSR ''Demokritos'', Department of Materials Science
under the research program «DOUALOGIC»
2002-2003 Military services (noncommissioned officer in the armored army)
Presentation of poster in Crete (2002-2003) with title:’’ studies of development of
hyperthin layer Ge on semiconductors Si(100)-2×1 surfaces’’
2000-2001 Physics Laboratory Demonstrator, Department of Physics, The University of
Ioannina, Greece
Computer Science in Fortran (1st
year)
1999-2002 Research activities in my graduate studies
1998-1999 The University of Glasgow, Department of Chemistry, Scotland Laboratory
experience in surface science, Research experience in the research centre of dares
bury in Warrington
1996.1998 Physics Laboratory Demonstrator, Department of Physics, The University of
Ioannina, Greece
Classical mechanics (1st
year)
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3. EXPERIMENTAL TECHNIQUES
AES Auger Electron Spectroscopy
LEED Low Energy Electron Diffraction
WF Work Function measurments
TDS Therrmal Desorption Spectroscopy
TPD Temperature Programming Desorption
XRD X-Ray Diffraction
XRR X-ray Reflectivity
RHEED Reflection High Energy Electron Diffraction
MBE Molecular Beam Epitaxy
RF Magnetron Sputtering Radio Frequency Magnetron Sputtering
Microfabrication Clean room
COMPUTER SKILLS
Operating Systems Extensive use of WINDOWS operating system, Word, Excel,
Power Point , Outlook
Basic knowledge of UNIX
Mathematical Packages ORIGIN
Technical Drawing Microsoft Visio, PhotoShop
Languages Functional knowledge of fortran and basic
ADDITIONAL
Awards Undergraduate student 3rd
position (scholarship)
Summer school in the University of Crete (1996)
Student Fellowship funded by INTEREG II from Greece (2000-2001)
Student Fellowship funded by research centre of Demokritos (A. Dimoulas,
Greece 2004-2009)
Post-doc Fellowship funded by the program SE2A (A. Nassiopoulou, NCSR-
Demokritos)
Post-doc Fellowship funded by the program ESPA (K. Misiakos, NCSR-
Demokritos)
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4. Languages Greek (native speaker), English (fluent), Italian (beginner)
Personal Interests Literature, traveling, basketball, kickboxing and jogging.
PUBLICATIONS
1) ''The effect of Se and Se/Al passivation on the oxidation of Ge'', D.Tsoutsou,
Y.Panayiotatos, S.Galata, A.Sotiropoulos, G.Mavrou, E.Golias, A.Dimoulas,
Microelectronic Engineering 88 (2011) 407
2) ''The role of La surface chemistry in the passivation of Ge'', A.Dimoulas, D.Tsoutsou,
Y.Panayiotatos, A.Sotiropoulos ,G.Mavrou, S.F.Galata,and E. Golias, Applied Physics
Letters 96 (2010) 012902
3) ''Stabilization of a very high-k tetragonal ZrO2 phase by direct doping with germanium'',D.
Tsoutsou, G. Apostolopoulos, S. Galata, P. Tsipas, A.Sotiropoulos, G. Mavrou, Y.
Panayiotatos, A. Dimoulas, Microelectronic Engineering 86 (2009) 1626
4) ''Stabilization of very high-k tetragonal phase in Ge-doped ZrO2 films grown by atomic
oxygen beam deposition'', D.Tsoutsou, G.Apostolopoulos, S.F.Galata, P.Tsipas,
A.Sotiropoulos, G.Mavrou, Y.Panayiotatos, A.Dimoulas, A.Lagoyannis, A.G.Karydas,
V.Kantarelou, and S.Harissopoulos, Journal of Applied Physics 106 (2009) 024107
5) ''Metal-oxide-semiconductor devices on p-type Ge with La2O3 and ZrO2/La2O3 as gate
dielectric and the effect of postmetallization anneal'', S. F. Galata, G. Mavrou, P. Tsipas,
A. Sotiropoulos, Y. Panayiotatos, and A. Dimoulas, J. Vac. Sci. Technol. B 27 (1) (2009)
246
6) ''Electrical properties of La2O3 and HfO2/La2O3 gate dielectrics for germanium metal-
oxide-semiconductor devices ''G. Mavrou, S. Galata, P. Tsipas, A. Sotiropoulos, Y.
Panayiotatos, and A.Dimoulas, Journal of Applied Physics 103 (2008) 014506
7) ''Germanium-induced stabilization of a very-k zirconia phase in ZrO2/GeO2 gate stacks'',
P. Tsipas, S . N. Volkos, A. Sotiropoulos, S. F. Galata, G. Mavrou, D.Tsoutsou,
Y.Panayiotatos, A. Dimoulas, C. Marchiori, and J. Fompeyrine, Applied Physics Letters
93 (2008) 082904
8) ''Very high-k ZrO2 with La2O3 „(LaGeOx) passivating interfacial layers on germanium
substrates'', G. Mavrou, P. Tsipas, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A.
Dimoulas, C. Marchiori and J. Fompeyrine, Applied Physics Letters 93 (2008) 212904
9) ''Very high-k tetragonal ZrO2 on Ge with GeO2 passivating interfacial layer'', P.Tsipas, G.
Mavrou, S.N. Volkos, A. Sotiropoulos, S. Galata, Y. Panayiotatos, A. Dimoulas, ECS
Transactions 16(10) (2008) 767
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5. 10) ''Gate dielectrics for high mobility semiconductors'', A. Dimoulas, P. Tsipas, S. Galata, G.
Mavrou, A. Sotiropoulos, C. Marchiori, C. Rossel, D. Webb, C. Andersson, M. Sousa, M.
Richter, J. Fompeyrine, ECS Transactions 16(5) (2008) 295
11) ''Germanium MOSFETs With CeO2/HfO2/TiN Gate Stacks '', Gareth Nicholas, David P.
Brunco, A. Dimoulas, Jan Van Steenbergen, Florence Bellenger, Michel Houssa, Matty
Caymax, Marc Meuris, Y. Panayiotatos, and Andreas Sotiropoulos, IEEE
TRANSACTIONS ON ELECTRON DEVICES, 54(6) (2007) 1425
12) ''Interface engineering for Ge metal-oxide–semiconductor devices'' A. Dimoulas, D.P.
Brunco , S. Ferrari , J.W. Seo , Y. Panayiotatos , A. Sotiropoulos , T. Conard , M.
Caymax , S. Spiga , M. Fanciulli , Ch.Dieker , E.K. Evangelou , S. Galata, M. Houssa,
M.M. Heyns, Thin Solid Films 515 (2007) 6337
13) ''Post deposition annealing studies of lanthanum aluminate and ceria high-k dielectrics on
germanium '' S.F. Galata, E.K. Evangelou , Y. Panayiotatos , A. Sotiropoulos , A.
Dimoulas, Microelectronics Reliability 47 (2007) 532
14) ''Germanium FETs and capacitors with rare earth CeO2/HfO2 gates '', A. Dimoulas, Y.
Panayiotatos, A. Sotiropoulos, P. Tsipas, D.P. Brunco, G. Nicholas, J. Van steenbergen,
F. Bellenger, M. Houssa, M, Caymax, M. Meuris, Solid – State electronics 51 (2007)
1508
15) ''Germanium metal-insulator-semiconductor capacitors with rare earth La2O3 gate
dielectrics'', G. Mavrou, S. F. Galata, A. Sotiropoulos, P. Tsipas, Y. Panayiotatos,
A.Dimoulas, E. K.Evangelou, J. W. Seo, Ch. Dieker, Microelectronics Engineering 84
(2007) 2324
16) ''Total dose response of Ge MOS capacitors with HfO2/Dy 2O3 gate stacks'', D.K. Chen,
R.D. Schrimpf, D.M. Fleetwood, K.F. Galloway, S.T. Pantelides, A. Dimoulas, G. Mavrou,
A. Sotiropoulos, Y. Panayiotatos, IEEE Transactions on Nuclear Science 54(4) (2007)
971
17) ''Epitaxial germanium-on-insulator grown on (001) Si'' J.W. Seo, Ch. Dieker, A.
Tapponnier, Ch.Marchiori, M. Sousa J.-P. Locquet, J. Fompeyrine, A. Ispas, C. Rossel, Y.
Panayiotatos, A. Sotiropoulos, A. Dimoula, Microelectronic Engineering 84 (2007) 2328
18) ''Electrical Properties of Atomic-Beam Deposited GeO1−xNx/HfO2 Gate Stacks on Ge'',
M. Houssa, T.Conard,F. Bellenger,G. Mavrou,Y. Panayiotatos, A. Sotiropoulos, A.
Dimoulas, M. Meuris, M. Caymax, and M. M. Heynsa, Journal of The Electrochemical
Society, 153 (12) (2006) G1112
19) ''Electron energy band alignment at interfaces of (100)Ge with rare-earth oxide
insulators'', V. V. Afanas’ev, S. Shamuilia, and A. Stesmans, A. Dimoulas, Y.
Panayiotatos, A. Sotiropoulos, M. Houssa, D. P. Brunco, Applied Physics Letters 88
(2006) 132111
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6. 20) ''Fermi-level pinning and charge neutrality level in germanium'', A. Dimoulas, P. Tsipas,
and A. Sotiropoulos, Applied Physics Letters 89 (2006) 252110
21) '' Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors'', A.
Dimoulas,a! G. Vellianitis, G. Mavrou, E. K. Evangelou, and A. Sotiropoulos, Applied
Physics Letters 86 (2005) 223507
22) ''A study of Cs adsorption on Se-covered Si(1 0 0) 2×1 surfaces'', A.K. Sotiropoulos, M.
Kamaratos, Applied Surface Science 229 (2004) 161
23) ''Selenium adsorption on Cs-covered Si(100) 2×1 surfaces'', A.K. Sotiropoulos, M.
Kamaratos, Solid State Communications 129 (2004) 637
24) ''A structural study of formate on Cu(111) '', A. Sotiropoulos, P.K. Milligan, B.C.C. Cowie ,
M. Kadodwala, Surface Science 444 (2000) 52
POSTERS
1) ‘Adsorption of thiophene and CO on Cu(111) surfaces’, A. Sotiropoulos, M. Kadodwala,
Saint Andrews, UK, 1998
2) ‘Studies of development hyperthin layer Ge on semiconductor Si(100)2×1 surfaces’, A.
Sotiropoulos, M. Kamaratos, Crete, Greece, 2002
3) ‘Germanium MIS capacitors with rare earth La2O3 gate dielectric’ G. Mavrou, S. Galata, A.
Sotiropoulos, P. Tsipas, Y. Panayiotatos, A. Dimoulas, E.K.Evangelou, J.W.Seo,
Ch.Dieker, France, 2008
4) ‘Electrical characterization of Schottky diode Ge’, P.Tsipas, G.Μavrou, Α.Sotiropoulos,
Α.Dimouals and Ε.Εvangelou, France, 2009
5) ‘GeO2/ZrO2 gate dielectrics stack for Ge MOS devices’, P. Tsipas, A. Sotiropoulos, S.
Galata, G. Mavrou, Y. Panayiotatos, France, 2007
6) ‘Post – annealing treatment of La and Ge – based high – k dielectrics on Ge’, S.F. Galata,
Y. Panayiotatos, A. Sotiropoulos, E.K. Evangelou and A. Dimoulas, France, 2006
6

7. 20) ''Fermi-level pinning and charge neutrality level in germanium'', A. Dimoulas, P. Tsipas,
and A. Sotiropoulos, Applied Physics Letters 89 (2006) 252110
21) '' Intrinsic carrier effects in HfO2–Ge metal–insulator–semiconductor capacitors'', A.
Dimoulas,a! G. Vellianitis, G. Mavrou, E. K. Evangelou, and A. Sotiropoulos, Applied
Physics Letters 86 (2005) 223507
22) ''A study of Cs adsorption on Se-covered Si(1 0 0) 2×1 surfaces'', A.K. Sotiropoulos, M.
Kamaratos, Applied Surface Science 229 (2004) 161
23) ''Selenium adsorption on Cs-covered Si(100) 2×1 surfaces'', A.K. Sotiropoulos, M.
Kamaratos, Solid State Communications 129 (2004) 637
24) ''A structural study of formate on Cu(111) '', A. Sotiropoulos, P.K. Milligan, B.C.C. Cowie ,
M. Kadodwala, Surface Science 444 (2000) 52
POSTERS
1) ‘Adsorption of thiophene and CO on Cu(111) surfaces’, A. Sotiropoulos, M. Kadodwala,
Saint Andrews, UK, 1998
2) ‘Studies of development hyperthin layer Ge on semiconductor Si(100)2×1 surfaces’, A.
Sotiropoulos, M. Kamaratos, Crete, Greece, 2002
3) ‘Germanium MIS capacitors with rare earth La2O3 gate dielectric’ G. Mavrou, S. Galata, A.
Sotiropoulos, P. Tsipas, Y. Panayiotatos, A. Dimoulas, E.K.Evangelou, J.W.Seo,
Ch.Dieker, France, 2008
4) ‘Electrical characterization of Schottky diode Ge’, P.Tsipas, G.Μavrou, Α.Sotiropoulos,
Α.Dimouals and Ε.Εvangelou, France, 2009
5) ‘GeO2/ZrO2 gate dielectrics stack for Ge MOS devices’, P. Tsipas, A. Sotiropoulos, S.
Galata, G. Mavrou, Y. Panayiotatos, France, 2007
6) ‘Post – annealing treatment of La and Ge – based high – k dielectrics on Ge’, S.F. Galata,
Y. Panayiotatos, A. Sotiropoulos, E.K. Evangelou and A. Dimoulas, France, 2006
6