SPICE MODEL of 1MBH03D-120 (Professional+FWDS Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MBH03D-120
MANUFACTURER: Fuji Electric
*REMARK: Free-Wheeling Diode (Standard Model)
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

2. Transfer Characteristics
Circuit Simulation result
6.0A
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U1 D1
1MBH03D-120 D1MBH03D-120
VCE
5Vdc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

3. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
0.050 8.000 7.883 -1.46
2.650 10.000 9.981 -0.19
5.800 12.000 12.039 0.32
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

4. Fall Time Characteristics
Circuit Simulation result
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
0A
2.0us 3.0us 4.0us 5.0us 6.0us
I(RL)
Time
Evaluation circuit
RL
Rg U1 D1 239
1MBH03D-120 D1MBH03D-120
V1 = -15
V2 = 15 43
TD = 0 V1
TR = 10n VCE
TF = 10n 600Vdc
PW = 3u
PER = 20u
0
Test condition: IC=2.5 (A), VCC=600 (V)
Parameter Unit Measurement Simulation %Error
tf us 0.250 0.253 1.2
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

5. Gate Charge Characteristics
Circuit Simulation result
25V
20V
15V
10V
5V
0V
0 20n 40n 60n 70n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
U1 D3 I1
1MBH03D-120 D2
D1MBH03D-120
Dbreak 2.5
I1 = 0 W1
I2 = 1m +
TF = 10n V3
TR = 10n -
TD = 0 I2 W
PER = 500m IOFF = 100uA 600
PW = 5m ION = 0A
0
Test condition: VCC=600 (V), IC=2.5 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 12.000 11.979 -0.18
Qgc nc 11.000 10.833 -1.52
Qg nc 33.500 34.219 2.15
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

6. Saturation Characteristics
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V
I(IC)
V(IC:-)
Evaluation circuit
U1 D1
1MBH03D-120 D1MBH03D-120
IC
0Adc
VGE
15Vdc
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

7. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1.00 2.100 2.098 -0.11
2.00 2.600 2.612 0.46
3.00 3.050 3.033 -0.57
4.00 3.400 3.412 0.34
5.00 3.800 3.797 -0.07
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

8. Output Characteristics
Circuit Simulation result
5.0A
20V 15V
4.0A
12V
3.0A
10V
2.0A
1.0A
VGE=8V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(U1:C)
V_VCE
Evaluation circuit
U1 D1 VCE
1MBH03D-120 5Vdc
D1MBH03D-120
15Vdc VGE
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

9. FWD Forward Current Characteristics
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
EC
V1
0Vdc
V2 D1 0Vdc
D1MBH03D-120
U1
1MBH03D-120
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

10. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
0.4 1.450 1.485 2.39
1 1.800 1.786 -0.79
2 2.100 2.093 -0.33
3 2.350 2.329 -0.89
4 2.550 2.536 -0.55
5 2.700 2.727 0.98
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009

11. Reverse Recovery Characteristics
Circuit Simulation result
3.0A
2.5A
2.0A
1.5A
1.0A
0.5A
0A
-0.5A
-1.0A
-1.5A
-2.0A
-2.5A
-3.0A
-3.5A
-4.0A
5.16us 5.24us 5.32us 5.40us 5.48us 5.56us
I(FWD)
Time
Evaluation circuit
L2
1 2
2nH
U2 D2
1MBH03D-120 D1MBH03D-120
IC = 2.5
1500uH
FWD 2 1
C L1 VCE
200
Rg U1 D1
1MBH03D-120 D1MBH03D-120
V1 = -15
V2 = 15 2
TD = 5u V1
TR = 10n
TF = 10n
PW = 4.998u
PER = 100u
0
Test condition: VCC=200 (V), IC=2.5 (A) di/dt=-100A/usec
Parameter Unit Measurement Simulation %Error
trr ns 75.000 36.660 -51.12
Irr A 3.000 3.044 1.47
All Rights Reserved Copyright (C) Bee Technologies Inc. 2009