This document contains information about an exam for a Basic Electrical and Electronics Engineering course for Bio-Technology students. It provides 8 questions that students can answer, each with multiple parts. The questions cover topics like RMS values, DC machines, semiconductor physics, rectifiers, transistors, amplifiers, oscillators, and binary conversions. Students must answer 5 of the 8 questions and have 3 hours to complete the exam, which is out of a maximum of 80 marks.
State of ICS and IoT Cyber Threat Landscape Report 2024 previewPrayukth K V
The IoT and OT threat landscape report has been prepared by the Threat Research Team at Sectrio using data from Sectrio, cyber threat intelligence farming facilities spread across over 85 cities around the world. In addition, Sectrio also runs AI-based advanced threat and payload engagement facilities that serve as sinks to attract and engage sophisticated threat actors, and newer malware including new variants and latent threats that are at an earlier stage of development.
The latest edition of the OT/ICS and IoT security Threat Landscape Report 2024 also covers:
State of global ICS asset and network exposure
Sectoral targets and attacks as well as the cost of ransom
Global APT activity, AI usage, actor and tactic profiles, and implications
Rise in volumes of AI-powered cyberattacks
Major cyber events in 2024
Malware and malicious payload trends
Cyberattack types and targets
Vulnerability exploit attempts on CVEs
Attacks on counties – USA
Expansion of bot farms – how, where, and why
In-depth analysis of the cyber threat landscape across North America, South America, Europe, APAC, and the Middle East
Why are attacks on smart factories rising?
Cyber risk predictions
Axis of attacks – Europe
Systemic attacks in the Middle East
Download the full report from here:
https://sectrio.com/resources/ot-threat-landscape-reports/sectrio-releases-ot-ics-and-iot-security-threat-landscape-report-2024/
DevOps and Testing slides at DASA ConnectKari Kakkonen
My and Rik Marselis slides at 30.5.2024 DASA Connect conference. We discuss about what is testing, then what is agile testing and finally what is Testing in DevOps. Finally we had lovely workshop with the participants trying to find out different ways to think about quality and testing in different parts of the DevOps infinity loop.
UiPath Test Automation using UiPath Test Suite series, part 3DianaGray10
Welcome to UiPath Test Automation using UiPath Test Suite series part 3. In this session, we will cover desktop automation along with UI automation.
Topics covered:
UI automation Introduction,
UI automation Sample
Desktop automation flow
Pradeep Chinnala, Senior Consultant Automation Developer @WonderBotz and UiPath MVP
Deepak Rai, Automation Practice Lead, Boundaryless Group and UiPath MVP
LF Energy Webinar: Electrical Grid Modelling and Simulation Through PowSyBl -...DanBrown980551
Do you want to learn how to model and simulate an electrical network from scratch in under an hour?
Then welcome to this PowSyBl workshop, hosted by Rte, the French Transmission System Operator (TSO)!
During the webinar, you will discover the PowSyBl ecosystem as well as handle and study an electrical network through an interactive Python notebook.
PowSyBl is an open source project hosted by LF Energy, which offers a comprehensive set of features for electrical grid modelling and simulation. Among other advanced features, PowSyBl provides:
- A fully editable and extendable library for grid component modelling;
- Visualization tools to display your network;
- Grid simulation tools, such as power flows, security analyses (with or without remedial actions) and sensitivity analyses;
The framework is mostly written in Java, with a Python binding so that Python developers can access PowSyBl functionalities as well.
What you will learn during the webinar:
- For beginners: discover PowSyBl's functionalities through a quick general presentation and the notebook, without needing any expert coding skills;
- For advanced developers: master the skills to efficiently apply PowSyBl functionalities to your real-world scenarios.
Neuro-symbolic is not enough, we need neuro-*semantic*Frank van Harmelen
Neuro-symbolic (NeSy) AI is on the rise. However, simply machine learning on just any symbolic structure is not sufficient to really harvest the gains of NeSy. These will only be gained when the symbolic structures have an actual semantics. I give an operational definition of semantics as “predictable inference”.
All of this illustrated with link prediction over knowledge graphs, but the argument is general.
Securing your Kubernetes cluster_ a step-by-step guide to success !KatiaHIMEUR1
Today, after several years of existence, an extremely active community and an ultra-dynamic ecosystem, Kubernetes has established itself as the de facto standard in container orchestration. Thanks to a wide range of managed services, it has never been so easy to set up a ready-to-use Kubernetes cluster.
However, this ease of use means that the subject of security in Kubernetes is often left for later, or even neglected. This exposes companies to significant risks.
In this talk, I'll show you step-by-step how to secure your Kubernetes cluster for greater peace of mind and reliability.
Dev Dives: Train smarter, not harder – active learning and UiPath LLMs for do...UiPathCommunity
💥 Speed, accuracy, and scaling – discover the superpowers of GenAI in action with UiPath Document Understanding and Communications Mining™:
See how to accelerate model training and optimize model performance with active learning
Learn about the latest enhancements to out-of-the-box document processing – with little to no training required
Get an exclusive demo of the new family of UiPath LLMs – GenAI models specialized for processing different types of documents and messages
This is a hands-on session specifically designed for automation developers and AI enthusiasts seeking to enhance their knowledge in leveraging the latest intelligent document processing capabilities offered by UiPath.
Speakers:
👨🏫 Andras Palfi, Senior Product Manager, UiPath
👩🏫 Lenka Dulovicova, Product Program Manager, UiPath
JMeter webinar - integration with InfluxDB and GrafanaRTTS
Watch this recorded webinar about real-time monitoring of application performance. See how to integrate Apache JMeter, the open-source leader in performance testing, with InfluxDB, the open-source time-series database, and Grafana, the open-source analytics and visualization application.
In this webinar, we will review the benefits of leveraging InfluxDB and Grafana when executing load tests and demonstrate how these tools are used to visualize performance metrics.
Length: 30 minutes
Session Overview
-------------------------------------------
During this webinar, we will cover the following topics while demonstrating the integrations of JMeter, InfluxDB and Grafana:
- What out-of-the-box solutions are available for real-time monitoring JMeter tests?
- What are the benefits of integrating InfluxDB and Grafana into the load testing stack?
- Which features are provided by Grafana?
- Demonstration of InfluxDB and Grafana using a practice web application
To view the webinar recording, go to:
https://www.rttsweb.com/jmeter-integration-webinar
GDG Cloud Southlake #33: Boule & Rebala: Effective AppSec in SDLC using Deplo...James Anderson
Effective Application Security in Software Delivery lifecycle using Deployment Firewall and DBOM
The modern software delivery process (or the CI/CD process) includes many tools, distributed teams, open-source code, and cloud platforms. Constant focus on speed to release software to market, along with the traditional slow and manual security checks has caused gaps in continuous security as an important piece in the software supply chain. Today organizations feel more susceptible to external and internal cyber threats due to the vast attack surface in their applications supply chain and the lack of end-to-end governance and risk management.
The software team must secure its software delivery process to avoid vulnerability and security breaches. This needs to be achieved with existing tool chains and without extensive rework of the delivery processes. This talk will present strategies and techniques for providing visibility into the true risk of the existing vulnerabilities, preventing the introduction of security issues in the software, resolving vulnerabilities in production environments quickly, and capturing the deployment bill of materials (DBOM).
Speakers:
Bob Boule
Robert Boule is a technology enthusiast with PASSION for technology and making things work along with a knack for helping others understand how things work. He comes with around 20 years of solution engineering experience in application security, software continuous delivery, and SaaS platforms. He is known for his dynamic presentations in CI/CD and application security integrated in software delivery lifecycle.
Gopinath Rebala
Gopinath Rebala is the CTO of OpsMx, where he has overall responsibility for the machine learning and data processing architectures for Secure Software Delivery. Gopi also has a strong connection with our customers, leading design and architecture for strategic implementations. Gopi is a frequent speaker and well-known leader in continuous delivery and integrating security into software delivery.
Epistemic Interaction - tuning interfaces to provide information for AI supportAlan Dix
Paper presented at SYNERGY workshop at AVI 2024, Genoa, Italy. 3rd June 2024
https://alandix.com/academic/papers/synergy2024-epistemic/
As machine learning integrates deeper into human-computer interactions, the concept of epistemic interaction emerges, aiming to refine these interactions to enhance system adaptability. This approach encourages minor, intentional adjustments in user behaviour to enrich the data available for system learning. This paper introduces epistemic interaction within the context of human-system communication, illustrating how deliberate interaction design can improve system understanding and adaptation. Through concrete examples, we demonstrate the potential of epistemic interaction to significantly advance human-computer interaction by leveraging intuitive human communication strategies to inform system design and functionality, offering a novel pathway for enriching user-system engagements.
Epistemic Interaction - tuning interfaces to provide information for AI support
12302 Basic Electrical And Electronics Engineering
1. www.studentyogi.com www.studentyogi.com
Code No: R05012302
Set No. 1
I B.Tech Supplimentary Examinations, Aug/Sep 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
1. (a) State RMS value of a voltage waveform and nd the RMS value and crest
factor of the waveform v(t) of gure.1a
Figure 1a
(b) What is potential di erence?
(c) An electric heater takes 3 kW at 240 Volts. Calculate the current and resis-
tance of the heating element. [10+2+4]
2. (a) Name the various parts of a D.C machine and give the materials used for each
part. Also show the magnetic path.
(b) Explain the principle of operation of D.C motor. [8+8]
3. (a) For the network shown in the gure 3(a)i determine the range of RL and IL
that will result in VRL being maintained at 10 V.
i. Determine the maximum Wattage rating of the dio de.
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Figure 3(a)i
ii. The reverse saturation current of the dio de is 1 A. Its peak inverse Volt-
age is 500V. Find ri, Vo that PIV is not exceeded. show in gure 3(a)ii &
gure 3(a)ii
Figure 3(a)ii
Figure 3(a)ii
4. (a) Explain with neat circuit diagram how SCR can be used as HWR.
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(b) Explain how SCR can be used as a switch.
(c) Explain the turn on mechanism of SCR. [5+5+6]
5. (a) Compare the merits and drawbacks of FET and BJT.
(b) Sketch the basic structure of an n-channel JFET.
(c) De ne the pinch o voltage P and sketch the depletion region before and
after pinch-o and explain the reason. [6+4+6]
6. (a) De ne class A, B, AB, B and C operation of ampli ers.
(b) Draw the circuit diagram of a push-pull ampli er and explain how even har-
monics are eliminated.
(c) Derive the relation between gain with feed back and without feedback.[6+6+4]
7. (a) With the help of neat circuit diagram, explain the following applications of
OP-AMP
i. Multiplier
ii. di erentiator
iii. Subtractor.
(b) Design a scaling adder circuit using OP-AMP, to give the output voltage
o = -(3 1 + 4 2 + 5 3) 1 2 3 are the input voltages given to
the circuit. [10+6]
8. (a) Realize NAND gate using minimum number of NOR gates.
(b) Explain the principle of basic shift registers.
(c) Distinguish between asynchronous and synchronous counters.
(d) Distinguish between Ring and Twisted Ring counters. [4+4+4+4]
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Code No: R05012302
Set No. 2
I B.Tech Supplimentary Examinations, Aug/Sep 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
1. (a) Determine the voltage VAB in the circuit shown in the gure 1a
Figure 1a
(b) Find the power dissipated in 40 resistor of gure 1b shown. [10+6]
Figure 1b
2. (a) Does the induction motor have any similarities with the transformer. Compare
the similarities and di erences between them.
(b) A 20 h.p, 400 V, 50 Hz, 3-phase induction motor has an e ciency of 80%
and working at 0.7 p.f. The motor is connected to 400 Volts, 3-phase supply
calculate the current drawn by the motor from the mains. [8+8]
3. (a) Draw the energy band diagram of p-n junction under open circuit condition
and explain its operation.
(b) Prove that the dynamic resistance of p-n diode is ˜ n T
I [10+6]
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4. (a) A HWR has a load of 3.5 kW. If the diode resistance and secondary coil
resistance together have a resistance of 800 and the input voltage has a
signal voltage of peak value 240 V, Calculate
i. Peak, average and RMS value of current owing.
ii. DC power output
iii. AC power input
iv. E ciency of the recti er.
(b) Compare half wave, Center tapped full wave and bridge recti ers. [10+6]
5. (a) Draw the circuit of a transistor (n-p-n) in the CB con guration. Sketch the
input & output characteristics and explain the shape of the curves qualita-
tively.
(b) For the circuit in gure 5b shown for n-p-n transistor, calculate the collector
and base currents. Assume FE = 50. Explain Q point. [8+8]
Figure 5b
6. (a) De ne class A, B, AB, B and C operation of ampli ers.
(b) Draw the circuit diagram of a push-pull ampli er and explain how even har-
monics are eliminated.
(c) Derive the relation between gain with feed back and without feedback.[6+6+4]
7. (a) Explain the e ect of temperature on
i. i/p bias current
ii. i/p o set current
iii. i/p o set voltage.
(b) Explain in brief the applications of OP-AMP. [8+8]
8. (a) Give the Boolean functions: F= xy + x y +y z
i. Implement with only OR and NOT gates.
ii. Implement with only AND and NOT gates.
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(b) Explain the principle of master-slave JK ip- op.
(c) Find the complement of given function and reduce it to a minimum number
of literals.(BC +A D) (AB +CD ). [6+5+5]
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Code No: R05012302
Set No. 3
I B.Tech Supplimentary Examinations, Aug/Sep 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
1. (a) Derive an equation for the total power consumed in a three phase circuit. Will
it depend on the type of load connected?
(b) Three identical impedances 10 53 10 are connected in delta to a 3-phase,
240 volt balanced supply. Find the line currents and power consumed. [8+8]
2. (a) Show that single phase induction motors are not self starting.
(b) Explain the construction and working principle of any type of 1-phase induc-
tion motor. [8+8]
3. (a) Explain how an n-type semiconductor is formed. Name di erent donor impu-
rities used.
(b) i. Find the conductivity of intrinsic silicon at 300 0 .
ii. If donor impurity is added to the extent of 1 impurity atom in 108 silicon
atoms, nd the conductivity. It is given that at 300 0 ,
i = 1 5 × 1010 3 p = 500 2 n = 1300 2 . [4+4+8]
4. (a) Sketch typical SCR forward and reverse characteristics.
(b) Identify all regions of the characteristics and all important current and voltage
levels.
(c) Explain the shape of the curves in terms of the SCR two transistor equivalent
circuit.
(d) Explain why always silicon but not Germanium is used in the construction of
SCR.
(e) Obtain the expression for total current through SCR and Triac. [4+3+3+3]
5. (a) Draw the circuit diagram of a xed bias circuit and derive the expression for
stability factor S. Why this circuit is thermally not stable ? Explain.
(b) An n-p-n transistor with = 50 is used in a CE circuit with CC=10 V, C =
2K . The bias is obtained by connecting a 100 K resistance from collector
to base. Assume BE=0 V. Find
i. the Quiescent point
ii. the Stability factor S. [8+8]
6. (a) Compare the three transistor ampli er con gurations with related to AI , Av,
Ri and R0.
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(b) For the circuit shown calculate AI, AV , Ri and R0 using approximate
h-parameter model. Assume hfe = 50, hie = 1100 , hoe = 25 A/V, hre =
2.5 × 10 4 as shown in the gure 6b. [16]
Figure 6b
7. (a) Draw the circuit diagram of Wien bridge oscillator using BJT. Show that the
gain of the ampli er must be at least 3 for the oscillations to o ccur.
(b) For the xed-bias Ge transistor, n-p-n type, the junction voltages at satura-
tion and cuto one in active region, may be assumed to zero. This circuit
operate properly over the temperature range -50 oC to 75 oC and to just start
malfunctioning at these extremes. The various circuit speci cations are: CC
= 4.5V, BB = 3volts, fe=40 at -50 oC, and fe =60 at 75 oC, CBO = 4
A at 25 oC and doubles every 10 oC. Collector current is 10 A. Design the
values of c1, 1 and 2. [8+8]
8. (a) Explain the following switching circuit in binary logic notation as shown in
the gure8a
Figure 8a
(b) De ne a register. Construct a shift register using S-R ip- ops and explain
its operation.
(c) Convert the following numbers:
i. (101101. 101101)2 decimal number
ii. (5345)10 to binary number. [4+6+6]
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Code No: R05012302
Set No. 4
I B.Tech Supplimentary Examinations, Aug/Sep 2008
BASIC ELECTRICAL AND ELECTRONICS ENGINEERING
(Bio-Technology)
Time: 3 hours Max Marks: 80
Answer any FIVE Questions
All Questions carry equal marks
1. (a) Determine the voltage VAB in the circuit shown in the gure 1a
Figure 1a
(b) Find the power dissipated in 40 resistor of gure 1b shown. [10+6]
Figure 1b
2. (a) With a neat sketch explain the construction of a D.C. machine.
(b) Explain the principle of operation of D.C generator. [8+8]
3. (a) i. Find the resistivity of intrinsic silicon at 300 0K. It is given the i at 300
0K in silicon is 1 5 × 1010 3 and p = 500 2 - n = 1300-
2-
ii. If an acceptor impurity is added to the extent of 1 imputrity atom in
2 × 108 silicon atoms, nd its resistivity.
iii. If a donor impurity is added to the extent of 1 impurity atom in 5 × 107
silicon atoms, nd its resistivity.
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(b) Prove that the concentration of free electron in an intrinsic semiconductor is
[12+4]
given by = c (Ec Ef )/KT
4. (a) The half wave recti er shown in the gure 4a is fed with a sinusoidal voltage
V=20 sin100t.
i. Sketch the output waveform.
ii. Determine the DC output voltage assuming ideal diode behaviour.
iii. Repeat the calculations assuming the simpli ed diode (silicon) model.
Figure 4a
(b) Draw the circuit diagram of full wave recti er having two diodes and explain
its operation. [8+8]
5. (a) Draw the emitter characteristic of UJT and explain the shape of the curve
qualitatively. Mention di erent regions of operations.
(b) Draw the circuit of a relaxation oscillator and explain its operations. Mention
its applications. [8+8]
6. (a) Compare the di erences between voltage ampli ers and power ampli ers.
(b) Show that the maximum theoretical e ciency of class B push-pull ampli ers
is 78.5%.
(c) Draw the circuit of a transformer coupled power ampli er and explain its
operations with help of load-line analysis. [4+6+6]
7. (a) Draw the circuit diagram of Wien bridge oscillator using BJT. Show that the
gain of the ampli er must be at least 3 for the oscillations to o ccur.
(b) For the xed-bias Ge transistor, n-p-n type, the junction voltages at satura-
tion and cuto one in active region, may be assumed to zero. This circuit
operate properly over the temperature range -50 oC to 75 oC and to just start
malfunctioning at these extremes. The various circuit speci cations are: CC
= 4.5V, BB = 3volts, fe=40 at -50 oC, and fe =60 at 75 oC, CBO = 4
A at 25 oC and doubles every 10 oC. Collector current is 10 A. Design the
values of c1, 1 and 2. [8+8]
8. (a) Convert the following numbers:
i. (1431)10 to base 2.
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ii. (53 1575)10 to base 2.
(b) Implement AB+C D = F with three NAND gates. Draw the logic circuit.
(c) Prove that the NAND Gate is a universal gate.. [8+4+4]
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